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    P7 TRANSISTOR Search Results

    P7 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    P7 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M37733S4BFP

    Abstract: 80P6N
    Text: MITSUBISHI MICROCOMPUTERS M37733S4BFP t duc ro p New 16-BIT CMOS MICROCOMPUTER DESCRIPTION ●Programmable input/output ports P4, P5, P6, P7, P8 . 37 ●Clock generating circuit . 2 circuits built-in


    Original     		PDF M37733S4BFP 16-BIT M37733S4BFP H-LF432-A KI-9607 80P6N

    Untitled

    Abstract: No abstract text available
    Text: MT4S101T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S101T UHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 0.52±0.05 4 3 P7 1 1. Collector 2. Emitter 3. Base 4. Emitter 2 TESQ Maximum Ratings Ta = 25°C Characteristics


    Original     		PDF MT4S101T

    Untitled

    Abstract: No abstract text available
    Text: MT4S101T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S101T UHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 3 P7 1 Absolute Maximum Ratings Ta = 25°C TESQ Symbol Rating Unit Collector-Base voltage VCBO 6 V Collector-Emitter voltage


    Original     		PDF MT4S101T

    Untitled

    Abstract: No abstract text available
    Text: MT4S101T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S101T UHF Low Noise Amplifier Application Unit:mm 1.2±0.05 Features 3 P7 1 Absolute Maximum Ratings Ta = 25°C TESQ Symbol Rating Unit Collector-Base voltage VCBO 6 V Collector-Emitter voltage


    Original     		PDF MT4S101T

    DMA364A0

    Abstract: dma364
    Text: DMA364A0 Tentative Total pages page DMA364A0 Silicon PNP epitaxial planar type Tr1 Silicon PNP epitaxial planar type (Tr2) For digital circuits Marking Symbol : P7 Package Code : SSSMini6-F2-B Internal Connection 6 5 Absolute Maximum Ratings Ta = 25 °C


    Original     		PDF DMA364A0 DMA364A0 dma364

    FSEM30

    Abstract: BFP740 AN219 michael hiebel fundamentals of vector analysis NRP-Z21 sot344 BFP740ESD BFP740FESD C166 MTA-100
    Text: BF P7 4 0 E SD BF P7 4 0 E SD E S D- H a rd e n e d S i Ge :C Ul tr a L o w No i s e R F Tra n s i s to r wi t h 2 k V ES D Ra ti n g i n 5 – 6 G Hz L NA Ap p l i c a ti o n . 1 5 d B G a i n , 1 .3 d B No i s e Fi g u r e & < 1 0 0 n s T u rn - O n / T u rn - O ff


    Original     		PDF 20dBm AN219, BFP740ESD BFP740ESD AN219 FSEM30 BFP740 AN219 michael hiebel fundamentals of vector analysis NRP-Z21 sot344 BFP740FESD C166 MTA-100

    michael hiebel fundamentals of vector analysis

    Abstract: NRP-Z21 AN220 BFP740FESD MTA-100 rf detector diode BFP740F C166 TSLP-2-17 FSEM30
    Text: BF P7 4 0 F ES D BF P7 4 0 F ES D E SD - Ha r d e n e d Si Ge : C Ul tr a L o w No i s e R F Tra n s i s to r wi t h 2 k V ES D Ra ti n g i n 5 – 6 G Hz L NA Ap p l i c a ti o n . 1 7 d B G a i n , 1 .4 d B No i s e Fi g u r e & < 1 0 0 n s T u rn - O n / T u rn - O ff


    Original     		PDF 20dBm AN220, BFP740FESD BFP740FESD AN220 michael hiebel fundamentals of vector analysis NRP-Z21 AN220 MTA-100 rf detector diode BFP740F C166 TSLP-2-17 FSEM30

    BFP740FESD

    Abstract: MARKING P740 TR1013 BFP740 mipi PCB layout sdars zetex t 1053 zetex 1053 RF TRANSISTOR 10GHZ sdars lna
    Text: BF P740 F ES D High Gain and Lo w Noise Amplifier BF P7 4 0 F ES D f o r S DA Rs 2 . 3 3 G Hz Applic atio n Technic al Rep ort T R 1013 Revision: Rev. 1.0 2010-04-23 RF and Protecti on Devi c es Edition 2010-04-23 Published by Infineon Technologies AG 81726 Munich, Germany


    Original     		PDF BFP740FESD 33GHz TR1013, BFP740FESD TR1013 MARKING P740 TR1013 BFP740 mipi PCB layout sdars zetex t 1053 zetex 1053 RF TRANSISTOR 10GHZ sdars lna

    TRANSFORMER ERL35

    Abstract: 230v to 12v step down transformer smd transistor w17 ERL35 w12 smd transistor W17 SMD transistor atx power supply schematic dc 600 watts SOT W17 SMD transistor smd transistor w12 230v to 12v ac step down transformer
    Text: PM30006-01 ATX 300W 115Vac/230Vac 80PLUS SMPS ICs: SG6931, SG6516, SG6858 Contents A. General Spec…………………………P2 B. Schematic…………………………….P3 C. PCB layout……………………………P5 D. BOM………………………………….P7


    Original     		PDF PM30006-01 115Vac/230Vac 80PLUS SG6931, SG6516, SG6858 TRANSFORMER ERL35 230v to 12v step down transformer smd transistor w17 ERL35 w12 smd transistor W17 SMD transistor atx power supply schematic dc 600 watts SOT W17 SMD transistor smd transistor w12 230v to 12v ac step down transformer

    230v to 12v step down transformer

    Abstract: 230v to 12v ac step down transformer TRANSFORMER ERL35 230v to 12v step down transformer ic number 230v to 12v step down transformer circuit ERL35 W17 SMD transistor smps 230V smd transistor w17 1N4148 SMD LL-34
    Text: PM30006-02 ATX 300W 230V 80PLUS SMPS ICs: SG6931, SG6516, SG6858 Contents A. General Spec…………………………P2 B. Schematic…………………………….P3 C. PCB layout……………………………P5 D. BOM………………………………….P7


    Original     		PDF PM30006-02 80PLUS SG6931, SG6516, SG6858 230v to 12v step down transformer 230v to 12v ac step down transformer TRANSFORMER ERL35 230v to 12v step down transformer ic number 230v to 12v step down transformer circuit ERL35 W17 SMD transistor smps 230V smd transistor w17 1N4148 SMD LL-34

    hef4051

    Abstract: 74AUP2G34 74LVT1403 74ABT543A 74LV74 74AVCH1T45 74HC590 CBTD3306 NCX2200 74HC40103
    Text: ロジック IC データスイッチ/アナログスイッチ コンパレータ レベルシフタ 汎用ロジック Index 2 ●● P3 NXP ロジック ●● P4 低抵抗アナログスイッチ/データスイッチ ●● P7 コンパレータ ●●


    Original     		PDF

    transistor p14

    Abstract: P7 transistor transistor P1 P 12 BS2-IC jack p10 p15 transistor transistor p13 P4 transistor transistor p15 transistor p8
    Text: 1 2 4 3 J2 VR1 Vin J1 1 C4 0.1uF 9 Vdc Transistor Power Jack + Vin 3 Vout LM2940 5.0 C1 47uF D Vdd GND D 2 1 6 2 7 3 8 4 9 5 Resistor LED + C2 1.0 uF Pwr Note: The power jack and the battery are mechanically interlocked to assure they are used mutually exclusively.


    Original     		PDF LM2940 19-May-2005 transistor p14 P7 transistor transistor P1 P 12 BS2-IC jack p10 p15 transistor transistor p13 P4 transistor transistor p15 transistor p8

    Untitled

    Abstract: No abstract text available
    Text: LE AVAILAB DS2408 1-Wire 8-Channel Addressable Switch FEATURES • •        Eight Channels of Programmable I/O with Open-Drain Outputs On-Resistance of PIO Pulldown Transistor 100Ω max ; Off-Resistance 10MΩ (typ) Individual Activity Latches Capture


    Original     		PDF DS2408 64-Bit DS1811,

    P7 transistor

    Abstract: MARKING P7 SOT-323 LDTA113ZWT1G marking A1 TRANSISTOR micro-dot resistor transistor marking P7
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTA113ZWT1G Applications Inverter, Interface, Driver 3 • Features 1 Built-in bias resistors enable the configuration of an


    Original     		PDF LDTA113ZWT1G P7 transistor MARKING P7 SOT-323 LDTA113ZWT1G marking A1 TRANSISTOR micro-dot resistor transistor marking P7

    Untitled

    Abstract: No abstract text available
    Text: LE AVAILAB DS2408 1-Wire 8-Channel Addressable Switch PIN CONFIGURATION FEATURES • •        Eight Channels of Programmable I/O with Open-Drain Outputs On-Resistance of PIO Pulldown Transistor 100Ω max ; Off-Resistance 10MΩ (typ)


    Original     		PDF DS2408 64-Bit

    DS2408

    Abstract: DS80C520 RX-2 -G rc car 16 pin diagram of lcd display 16x1 CRC16 CRC-16 DS2408S DS2480B DS9097U pc controlled car circuit diagram using 8051
    Text: 19-5702; 12/10 DS2408 1-Wire 8-Channel Addressable Switch www.maxim-ic.com FEATURES • •        Eight Channels of Programmable I/O with Open-Drain Outputs On-Resistance of PIO Pulldown Transistor 100Ω max ; Off-Resistance 10MΩ (typ)


    Original     		PDF DS2408 64-Bit DS2408 DS80C520 RX-2 -G rc car 16 pin diagram of lcd display 16x1 CRC16 CRC-16 DS2408S DS2480B DS9097U pc controlled car circuit diagram using 8051

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI MICROCOMPUTERS M37733S4BFP 16-BIT CMOS MICROCOMPUTER DESCRIPTION •P ro g ra m m a b le input/output The M 37733S4BFP is a m icrocom puter using the 7700 Family core. ports P4, P5, P6, P7, P 8 . 37


    OCR Scan     		PDF M37733S4BFP 16-BIT 37733S4BFP OFP80-P-1420-0

    Untitled

    Abstract: No abstract text available
    Text: 7600 Series M37640E8-XXXF Preliminary Specification Mitsubishi Microcomputer 3 Electrical Characteristics 3.1 Absolute Maximum Ratings Table 3-1. Absolute Maximum Ratings Parameter Conditions Symbol uu > Power supply AVCC Analog power supply Vi Input voltage PO, PI, P2, P3, P4, P5, P6, P7, P8


    OCR Scan     		PDF M37640E8-XXXF

    television service mode manual

    Abstract: No abstract text available
    Text: G O L D S T A R T E C H N O L O G Y INC/ 51 E D •■4036757 QDDaab4 1 ■ I : 7 5 r.C> 7-< P7 GM6388 15 MEMORY TONE/PULSE SWITCHABLE DIALER DESCRIPTION The GM6388 is a monolithic integrated circuit which per­


    OCR Scan     		PDF GM6388 GM6388 15-Memory 16-digits 579545MHZ television service mode manual

    Untitled

    Abstract: No abstract text available
    Text: TLP733FJLP734F TO SHIBA TOSHIBA PHOTOCOUPLER TI P7 3 3 F GaAs IRED & PHOTO-TRANSISTOR TI P73 4F Unit in mm OFFICE MACHINE SWITCHING PO W ER SUPPLY TJ.'TJJXT 3 7I QUQUT1? U 11U -1- T T . PI U7 QT 1y l l ? W UnAOViO P Iie> 4-e>U in f CL o r\l^ A + A /O optically coupled to a gallium arsenide infrared emitting diode in a six


    OCR Scan     		PDF TLP733FJLP734F TLP733 TLP734. UL1577,

    T018

    Abstract: 2n1132
    Text: PNP Silicon Transistors PNP Silico n T ran sisto rs fo r high level audio ap p lications Characteristics at T.im jj = 2 5 °C M a xim um ratings Type B V CSO V BVC £0 V Case B V £S O V l CM A P7 0 T 1 W PT O T 2 W J JM °C h F £ 1 0 V /1 5 0 m A 30 . 25 0


    OCR Scan     		PDF p70T1 0V/150mA) 150mA/15mA) T018 2n1132

    20A400

    Abstract: 2SD1592 transistor n1t1
    Text: 2SD1592 NPN x i l NPN S ilicon T riple D iffuse d D arlington Transistor H igh V o lta g e , Low Speed S w itc h in g Industrial Use m&m « i : 1 ? - o o3 V 1 0 .5 M A X . ij > h ? i'felfD!trh*'' u0 o i£ W iK ^ T -# > 5 „ o p7 '< , 4 '•<, o tm m a itm u fT - y


    OCR Scan     		PDF 2SD1592 20A400 2SD1592 transistor n1t1

    fuji ipm

    Abstract: fuji electric ipm 4504 opto kic 125 6MBP75NA060-01 optocoupler 1g Hpcl
    Text: SPECIFICATION Device Name : I G B T - 1P M Tyoo Name : 6 M B P7 5 N A 060-0 1 Spec No. : M S6 M0276 F u ji E lectric C o .L td . Matsumoto Factory DATE AWN XFD NAME APPROVED Fuji Electric Co.,Ltd. n-XtiLJkiJhi •/. • o ¿C M Û S 6 M 2 7 6 w i s H04-004-07


    OCR Scan     		PDF 6MBP75NA060-0 MS6M0276 H04-004-07 H04-004-05 H04-C04-03 H040040; HCPL-4504) HPCL-4S04) fuji ipm fuji electric ipm 4504 opto kic 125 6MBP75NA060-01 optocoupler 1g Hpcl

    transistor TD-100

    Abstract: transistor TD-100 le NSP6190
    Text: NSP6190 PRELIMINARY MEDIUM-POWER PNP SILICON TRANSISTORS .designed for switching and wide band amplifier applications. • • • LOW COLLECTOR-EM ITTER SATURATION VOLTAGE DC CURRENT GAIN SPECIFIED TO S AMPERES EXCELLENT SAFE OPERATING AREA M AXIMUM RATINGS*


    OCR Scan     		PDF NSP6190 O-257AA NSP6190 40Vdc, 300ns, transistor TD-100 transistor TD-100 le