P8006EDG Search Results

P8006EDG Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
P8006EDG		Niko Semiconductor	P-Channel Logic Level Enhancement FET		Original	PDF

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Catalog Datasheet	MFG & Type	Document Tags	PDF
P8006EDG Abstract: nikosem niko-sem Text: NIKO-SEM P8006EDG P-Channel Logic Level Enhancement TO-252 Lead-Free Mode Field Effect Transistor D PRODUCT SUMMARY V BR DSS RDS(ON) ID -55V 80mΩ -8A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS	Original	P8006EDG O-252 AUG-19-2004 P8006EDG nikosem niko-sem	PDF
Untitled Abstract: No abstract text available Text: Single P-channel MOSFET ELM32411LA-S •General description ■Features ELM32411LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-55V Id=-7A Rds(on) < 80mΩ (Vgs=-10V) Rds(on) < 150mΩ (Vgs=-4.5V)	Original	ELM32411LA-S ELM32411LA-S P8006EDG O-252 AUG-19-2004	PDF

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P8006EDG

Abstract: nikosem niko-sem
Text: NIKO-SEM P8006EDG P-Channel Logic Level Enhancement TO-252 Lead-Free Mode Field Effect Transistor D PRODUCT SUMMARY V BR DSS RDS(ON) ID -55V 80mΩ -8A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

Original

P8006EDG O-252 AUG-19-2004 P8006EDG nikosem niko-sem

PDF

Untitled

Abstract: No abstract text available
Text: Single P-channel MOSFET ELM32411LA-S •General description ■Features ELM32411LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-55V Id=-7A Rds(on) < 80mΩ (Vgs=-10V) Rds(on) < 150mΩ (Vgs=-4.5V)