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    BA 7312

    Abstract: ba 3822 ls NEC IC 5020 098 BA 6688 L em 6695 6 pin ic 6628 j 6815 transistor BA 5977 ha 13483 fr 3709
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES PA828TF OUTLINE DIMENSIONS Unit in mm LOW NOISE: P ackage O u tlin e TS06 (T o p View) NF = 1.3 dB TYP at f = 2 GHz, Vce = 2 V, Ic = 3 m A HIGH GAIN: |S 21 e |2 = 8.5 dB TYP at f = 2 GHz, V c e = 2 V, Ic = 20 m A


    OCR Scan     		UPA828TF NE856 UPA828TF PA828TF PA828TF-T1 24-Hour BA 7312 ba 3822 ls NEC IC 5020 098 BA 6688 L em 6695 6 pin ic 6628 j 6815 transistor BA 5977 ha 13483 fr 3709 PDF

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    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR PA828TF HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD FEATURES • PACKAGE DRAWINGS (Unit: mm) Low noise NF = 1.3 dB TYP. @ V ce = 2 V, Ic = 3 mA, f = 2 GHz


    OCR Scan     		juPA828TF 2SC5184) PA828TF-T PA828TF PDF