TSOP048-P-1218-1
Abstract: No abstract text available
Text: THIN SMALL OUTLINE L-LEADED PACKAGE FUJITSU SEMICONDUCTOR DATA SHEET 48 PIN PLASTIC To Top / Package Lineup / Package Index FPT-48P-M07 EIAJ code : TSOP048-P-1218-1 48-pin plastic TSOP I Lead pitch 0.50 mm Lead shape Gullwing Lead bend direction Normal bend
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FPT-48P-M07
TSOP048-P-1218-1
48-pin
FPT-48P-M07)
F48015S-4C-3
TSOP048-P-1218-1
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Ablebond 8380
Abstract: smema DA6523 nozzle heater X3304 Theta-JC 5th mechnical engineering date sheet alpha Resistors slide cut template DRAWING Die Attach epoxy stamping
Text: 2 12 Advanced Package Applications: Tape Carrier Package 1/17/97 9:18 AM CH12WIP.DOC INTEL CONFIDENTIAL until publication date 2 CHAPTER 12 ADVANCED PACKAGE APPLICATIONS: TAPE CARRIER PACKAGE 12.1. INTRODUCTION TO THE PACKAGE TECHNOLOGY As semiconductor devices become more complex, they are being introduced into products that
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CH12WIP
Ablebond 8380
smema
DA6523
nozzle heater
X3304
Theta-JC
5th mechnical engineering date sheet
alpha Resistors slide
cut template DRAWING
Die Attach epoxy stamping
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Untitled
Abstract: No abstract text available
Text: SILICON PIN DIODES Selection guide SILICON PIN DIODES Selection Guide PAGE HOW TO SPECIFY A PIN DIODE? 12-5 SURFACE MOUNT PACKAGE - PLASTIC PACKAGE SWITCHING SILICON PIN DIODES 12-6 - PLASTIC PACKAGE ATTENUATING SILICON PIN DIODES 12-8 - LOW COST SQUARE CERAMIC PACKAGE PIN DIODES
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Diodes
Abstract: No abstract text available
Text: SILICON PIN DIODES Selection guide SILICON PIN DIODES Selection Guide PAGE HOW TO SPECIFY A PIN DIODE? 12-5 SURFACE MOUNT PACKAGE - PLASTIC PACKAGE SWITCHING SILICON PIN DIODES 12-6 - PLASTIC PACKAGE ATTENUATING SILICON PIN DIODES 12-8 - LOW COST SQUARE CERAMIC PACKAGE PIN DIODES
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Ablebond 8380
Abstract: X3304 ablestik ablebond Ablestik 8380 A5700 shoulder angle foot length lead solder joint reliability smema control IPC-SM-780 tms 3615 A5716
Text: Advanced Package Applications: Tape Carrier Package 12.1 12 Introduction To The Package Technology As semiconductor devices become more complex they are being introduced into products that cover the spectrum of the marketplace. Portability of computing and information management is
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ANSI/J-STD-001,
Ablebond 8380
X3304
ablestik ablebond
Ablestik 8380
A5700
shoulder angle foot length lead solder joint reliability
smema control
IPC-SM-780
tms 3615
A5716
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LT1460BCS3-10
Abstract: marking code LTGG LTGF marking code sot 23 MARK LTGG LTKD MARKING CODE ltbw LM 3937 LT1460BCS3-2 LT1521CS8-3 LTHS
Text: PACKAGE PACKAGE CROSSDIMENSIONS REFERENCE LCC METAL CAN CERDIP Ceramic Dual-In-Line METAL CANS SSOP Shrink Small Outline TSSOP Thin Shrink Small Outline SIDE BRAZED PACKAGE OUTLINE DESCRIPTION LTC NSC MOT TI LINFIN MAXIM 8-Lead Side Brazed Hermetic D8 D
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20-Lead
20-Lead
28-Lead
LT1613CS5
LT1615CS5
LT1615CS5-1
LT1617CS5
LT1617CS5-1
LT1761ES5-1
LT1761ES5-2
LT1460BCS3-10
marking code LTGG
LTGF marking code sot 23
MARK LTGG
LTKD MARKING CODE
ltbw
LM 3937
LT1460BCS3-2
LT1521CS8-3
LTHS
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DIODE smd marking 22-16
Abstract: vco lm358n LM358 laser driver lm358 current limiter Zener diode smd marking code 621 adjustable zero span circuit with lm358 TRANSISTOR SMD MARKING CODE a7 j zener SMD MARK A9 TRANSISTOR SMD MARKING CODE SAW smd transistor code 621
Text: Micro SMD Qualification Package LM358, LMC6035, LM431, LM78L05, and LMC555 National’s Micro SMD – The Obvious Answer For Portable Applications Standard Surface Mount Packages vs. Micro SMD Micro SMD Package • 0.5mm Bump Pitch • 0.9mm Max Package Height
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LM358,
LMC6035,
LM431,
LM78L05,
LMC555
OT23-5
DIODE smd marking 22-16
vco lm358n
LM358 laser driver
lm358 current limiter
Zener diode smd marking code 621
adjustable zero span circuit with lm358
TRANSISTOR SMD MARKING CODE a7 j
zener SMD MARK A9
TRANSISTOR SMD MARKING CODE SAW
smd transistor code 621
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A004R
Abstract: RO4350 VMMK-1218 VMMK-1218-BLKG USL10
Text: VMMK-1218 0.5 to 18 GHz Low Noise E-PHEMT in a Wafer Scale Package Data Sheet Description Features Avago Technologies has combined it’s industry leading E-pHEMT technology with a revolutionary chip scale package. The VMMK-1218 can produce an LNA with high dynamic range, high gain and low noise figure that
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VMMK-1218
VMMK-1218
100mm
250mm
AV02-1081EN
A004R
RO4350
VMMK-1218-BLKG
USL10
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LG 5804
Abstract: VMMK-1218-BLKG RGS 13/1 PHEMT marking code a BYY 56 byy 88 A004R MM20 RO4350 VMMK-1218
Text: VMMK-1218 0.5 to 18 GHz Low Noise E-PHEMT in a Wafer Scale Package Data Sheet Description Features Avago Technologies has combined it’s industry leading E-pHEMT technology with a revolutionary chip scale package. The VMMK-1218 can produce an LNA with high dynamic range, high gain and low noise figure that
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VMMK-1218
VMMK-1218
100mm
250mm
AV02-1081EN
LG 5804
VMMK-1218-BLKG
RGS 13/1
PHEMT marking code a
BYY 56
byy 88
A004R
MM20
RO4350
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Untitled
Abstract: No abstract text available
Text: VMMK-1218 0.5 to 18 GHz Low Noise E-PHEMT in a Wafer Scale Package Data Sheet Description Features Avago Technologies has combined it’s industry leading E-pHEMT technology with a revolutionary chip scale package. The VMMK-1218 can produce an LNA with high dynamic range, high gain and low noise figure that
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VMMK-1218
VMMK-1218
100mm
250mm
AV02-1081EN
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A004R
Abstract: MM20 RO4350 VMMK-1218 VMMK-1218-BLKG 802.11abgn
Text: VMMK-1218 0.5 to 18 GHz Low Noise E-PHEMT in a Wafer Scale Package Data Sheet Description Features Avago Technologies has combined it’s industry leading E-pHEMT technology with a revolutionary chip scale package. The VMMK-1218 can produce an LNA with high dynamic range, high gain and low noise figure that
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VMMK-1218
VMMK-1218
100mm
250mm
AV02-1081EN
A004R
MM20
RO4350
VMMK-1218-BLKG
802.11abgn
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LG 5804
Abstract: No abstract text available
Text: VMMK-1218 0.5 to 18 GHz Low Noise E-PHEMT in a Wafer Scale Package Data Sheet Description Features Avago Technologies has combined it’s industry leading E-pHEMT technology with a revolutionary chip scale package. The VMMK-1218 can produce an LNA with high dynamic range, high gain and low noise figure that
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VMMK-1218
VMMK-1218
100mm
250mm
AV02-1081EN
LG 5804
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PDF
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LG 5804
Abstract: VMMK-1218-BLKG VMMK-1218 A004R MM20 RO4350
Text: VMMK-1218 0.5 to 18 GHz Low Noise E-PHEMT in a Wafer Scale Package Data Sheet Description Features Avago Technologies has combined it’s industry leading E-pHEMT technology with a revolutionary chip scale package. The VMMK-1218 can produce an LNA with high dynamic range, high gain and low noise figure that
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VMMK-1218
VMMK-1218
100mm
250mm
AV02-1081EN
LG 5804
VMMK-1218-BLKG
A004R
MM20
RO4350
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117450
Abstract: TO253 lt941 ltc947 1624i LT 129i5 sm 2178a LT1510CGN sot23 1303 ltbw 83
Text: PACKAGE PACKAGE CROSSDIMENSIONS REFERENCE SIDE BRAZED PACKAGE OUTLINE DESCRIPTION LTC NSC MOT TI LINFIN MAXIM 8-Lead Side Brazed Hermetic D8 D D ADI/PMI — l — — DA 14-, 16-, 18- and 20-Lead Side Brazed (Hermetic) D D D YB QB XB L — — DD, DE, DN, DP
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20-Lead
20-Lead
O-220
117450
TO253
lt941
ltc947
1624i
LT 129i5
sm 2178a
LT1510CGN
sot23 1303
ltbw 83
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Untitled
Abstract: No abstract text available
Text: BPW21R www.vishay.com Vishay Semiconductors Silicon Photodiode FEATURES • Package type: leaded • Package form: TO-5 • Dimensions in mm : Ø 8.13 • Radiant sensitive area (in mm2): 7.5 • High photo sensitivity • Adapted to human eye responsivity
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BPW21R
BPW21R
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: BPW17N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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BPW17N
2002/95/EC
2002/96/EC
BPW17N
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: BPW16N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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BPW16N
2002/95/EC
2002/96/EC
BPW16N
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: BPW20RF www.vishay.com Vishay Semiconductors Silicon Photodiode, RoHS Compliant FEATURES • Package type: leaded • Package form: TO-5 • Dimensions in mm : Ø 8.13 • Radiant sensitive area (in mm2): 7.5 • High photo sensitivity • High radiant sensitivity
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BPW20RF
BPW20RF
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: BPW20RF www.vishay.com Vishay Semiconductors Silicon Photodiode, RoHS Compliant FEATURES • Package type: leaded • Package form: TO-5 • Dimensions in mm : Ø 8.13 • Radiant sensitive area (in mm2): 7.5 • High photo sensitivity • High radiant sensitivity
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BPW20RF
BPW20RF
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: BPW21R www.vishay.com Vishay Semiconductors Silicon Photodiode FEATURES • Package type: leaded • Package form: TO-5 • Dimensions in mm : Ø 8.13 • Radiant sensitive area (in mm2): 7.5 • High photo sensitivity • Adapted to human eye responsivity
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BPW21R
BPW21R
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: BPW20RF www.vishay.com Vishay Semiconductors Silicon Photodiode, RoHS Compliant FEATURES • Package type: leaded • Package form: TO-5 • Dimensions in mm : Ø 8.13 • Radiant sensitive area (in mm2): 7.5 • High photo sensitivity • High radiant sensitivity
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BPW20RF
BPW20RF
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: BPW17N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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BPW17N
2002/95/EC
2002/96/EC
BPW17N
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
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PDF
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pn photodiode
Abstract: No abstract text available
Text: BPW21R www.vishay.com Vishay Semiconductors Silicon Photodiode FEATURES • Package type: leaded • Package form: TO-5 • Dimensions in mm : Ø 8.13 • Radiant sensitive area (in mm2): 7.5 • High photo sensitivity • Adapted to human eye responsivity
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BPW21R
2002/95/EC
2002/96/EC
BPW21R
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
pn photodiode
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Untitled
Abstract: No abstract text available
Text: BPW16N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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BPW16N
2002/95/EC
2002/96/EC
BPW16N
11-Mar-11
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