PACKAGE 440208 Search Results

PACKAGE 440208 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TPH9R00CQH		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N)
TPH2R408QM		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance
XPH2R106NC		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF)
XPH3R206NC		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF)
TPH4R008QM		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N)

PACKAGE 440208 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
RF3-50 Abstract: POWER456 Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher	Original	CMPA5585025F CMPA5585025F CMPA55 85025F RF3-50 POWER456	PDF
CMPA801B025 Abstract: CMPA801B025F x-band mmic 3.5 DC Jack Text: CMPA801B025F 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	CMPA801B025F CMPA801B025F CMPA80 1B025F CMPA801B025 x-band mmic 3.5 DC Jack	PDF
CMPA801B025F Abstract: CMPA801B025 cree rf 1B025F package 440208 cree rf cmpa801b025f Text: CMPA801B025F 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	CMPA801B025F CMPA801B025F CMPA80 1B025F CMPA801B025 cree rf package 440208 cree rf cmpa801b025f	PDF
CMPA801B025 Abstract: X-band Internally Matched Power GaN HEMTs Text: CMPA801B025F 25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	CMPA801B025F CMPA801B025F CMPA80 1B025F CMPA801B025 X-band Internally Matched Power GaN HEMTs	PDF
Untitled Abstract: No abstract text available Text: CMPA801B025F 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	CMPA801B025F CMPA801B025F CMPA80 1B025F	PDF
Untitled Abstract: No abstract text available Text: CMPA801B025F 25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	CMPA801B025F CMPA801B025F CMPA80 1B025F	PDF
Untitled Abstract: No abstract text available Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	CMPA5585025F CMPA5585025F CMPA55 85025F	PDF
CMPA5585025F Abstract: power transistor gaas x-band CMPA5585025F-TB Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	CMPA5585025F CMPA5585025F CMPA55 85025F power transistor gaas x-band CMPA5585025F-TB	PDF
x-Band Hemt Amplifier Abstract: No abstract text available Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	CMPA5585025F CMPA5585025F CMPA55 85025F x-Band Hemt Amplifier	PDF
Untitled Abstract: No abstract text available Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	CMPA5585025F CMPA5585025F CMPA55 85025F	PDF
Untitled Abstract: No abstract text available Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	CMPA5585025F CMPA5585025F CMPA55 85025F	PDF
Untitled Abstract: No abstract text available Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	CMPA5585025F CMPA5585025F CMPA55 85025F	PDF
Untitled Abstract: No abstract text available Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	CMPA5585025F CMPA5585025F CMPA55 85025F	PDF
Untitled Abstract: No abstract text available Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	CMPA5585025F CMPA5585025F CMPA55 85025F	PDF