PLSI 1016-60LJ
Abstract: PAL 007 pioneer pal16r8 programming algorithm PAL 008 pioneer lattice 1016-60LJ ISP Engineering Kit - Model 100 PLSI-2064-80LJ GAL16v8 programmer schematic GAL programming Guide ispLSI 2064-80LT
Text: Lattice Semiconductor Data Book 1996 Click on one of the following choices: • Table of Contents • Data Book Updates & New Products • Go to Main Menu 1996 Lattice Semiconductor Corporation. All rights reserved. ispLSI and pLSI Product Index Pins Density
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1016E
1032E
20ters
48-Pin
304-Pin
PLSI 1016-60LJ
PAL 007 pioneer
pal16r8 programming algorithm
PAL 008 pioneer
lattice 1016-60LJ
ISP Engineering Kit - Model 100
PLSI-2064-80LJ
GAL16v8 programmer schematic
GAL programming Guide
ispLSI 2064-80LT
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state-machine structure
Abstract: PDF IC 9012 SR flip flop using discrete gates 123B 20G10 CY7C277 PALCE22V10 PLDC20G10 S12A S12B
Text: fax id: 6423 State Machine Design Considerations and Methodologies The use of state machines provides a systematic way to design complex sequential logic circuits—an increasingly popular approach since the advent of PLD Programmable Logic Device circuitry. This application note describes the many
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20G10
Abstract: S12B 123B CY7C277 PALCE22V10 PLDC20G10 S12A bit-slice PALC20G10
Text: State Machine Design Considerations and Methodologies The use of state machines provides a systematic way to design complex sequential logic circuits—an increasingly popular approach since the advent of PLD Programmable Logic Device circuitry. This application note describes the many
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HD637B01VOP
Abstract: HD63701VOP HD63705VOP hd63701xop HD637A01VOP HD64F3048F16 MB8516 HD637B01YOP HD63701YOP lh57257
Text: AF−9700 SERIES DEVICE LIST AF−9704 EPROM AF−9705 MOS AF−9706 EPROM AF−9707 PC AF−9721 GANG PROGRAMMER
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AF-9700
24DIP
28DIP
HD637B01VOP
HD63701VOP
HD63705VOP
hd63701xop
HD637A01VOP
HD64F3048F16
MB8516
HD637B01YOP
HD63701YOP
lh57257
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gal16v8
Abstract: National SEMICONDUCTOR GAL16V8 gal20v8 PAL20P8 GAL22V10 85C220 PAL16L8 EP330 lattice GAL20V8 AMD PAL20P8
Text: GAL Product Line Cross Reference MANUFACTURER ALTERA AMD PART # EP310 EP320 EP330 GAL16V8Z1 GAL16V81 or. GAL18V10 5C031 5C032 85C220 GAL16V81 or. GAL16V8Z or. GAL18V10 85C224 GAL20V81 or. GAL22V10 85C22V10 GAL22V10 PAL10H8 PAL10L8 PAL12H6 PAL12L6
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EP310
EP320
EP330
GAL16V8Z1
GAL16V81
GAL18V10
5C031
5C032
85C220
gal16v8
National SEMICONDUCTOR GAL16V8
gal20v8
PAL20P8
GAL22V10
85C220
PAL16L8
EP330
lattice GAL20V8
AMD PAL20P8
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data sheet transistor 9012
Abstract: PALC20G10 dd 127 dd 127 d PDF IC 9012 20G10 9012 011 ic 9012 transistor 9012 transistors equivalent 9012 123B
Text: State Machine Design Considerations and Methodologies The use of state machines provides a systematic way to another. to design complex sequential logic circuitsĊan inĆ or more product terms generated from external inĆ creasingly puts, although other state paths are possible.
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ATMEL GAL16V8
Abstract: PAL20P8 GAL16V8 plhs18p8 TI GAL22V10 PLHS16L8 GAL22V10 National AmPAL16R4 GAL16V8 atmel ampal18p8
Text: GAL Product Line Cross Reference MANUFACTURER ALTERA AMD PART # EP310 EP320 EP330 GAL16V8Z1 GAL16V81 or. GAL18V10 5C031 5C032 85C220 GAL16V81 or. GAL16V8Z or. GAL18V10 85C224 GAL20V81 or. GAL22V10 85C22V10 GAL22V10 PAL10H8 PAL10L8 PAL12H6 PAL12L6
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EP310
EP320
EP330
GAL16V8Z1
GAL16V81
GAL18V10
5C031
5C032
85C220
ATMEL GAL16V8
PAL20P8
GAL16V8
plhs18p8
TI GAL22V10
PLHS16L8
GAL22V10 National
AmPAL16R4
GAL16V8 atmel
ampal18p8
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EP320
Abstract: PLS153 gal16v8 EP330 peel18cv8 GAL22V10 National PAL20P8 altera ep320 85C220 EP310
Text: GAL Product Line Cross Reference MANUFACTURER ALTERA AMD PART # EP310 EP320 EP330 GAL16V8Z1 GAL16V81 or. GAL18V10 5C031 5C032 85C220 GAL16V81 or. GAL16V8Z or. GAL18V10 85C224 GAL20V81 or. GAL22V10 85C22V10 GAL22V10 PAL10H8 PAL10L8 PAL12H6 PAL12L6
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EP310
EP320
EP330
GAL16V8Z1
GAL16V81
GAL18V10
5C031
5C032
85C220
EP320
PLS153
gal16v8
EP330
peel18cv8
GAL22V10 National
PAL20P8
altera ep320
85C220
EP310
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National SEMICONDUCTOR GAL16V8
Abstract: EP330 PLHS18P8 EP320 5c032 ATMEL GAL16V8 PALC22V10 ampal18p8 GAL16V8 LA4490
Text: GAL Product Line Cross Reference MANUFACTURER ALTERA AMD PART # EP310 EP320 EP330 GAL16V8Z1 GAL16V81 or. GAL18V10 5C031 5C032 85C220 GAL16V81 or. GAL16V8Z or. GAL18V10 85C224 GAL20V81 or. GAL22V10 85C22V10 GAL22V10 PAL10H8 PAL10L8 PAL12H6 PAL12L6
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EP310
EP320
EP330
GAL16V8Z1
GAL16V81
GAL18V10
5C031
5C032
85C220
National SEMICONDUCTOR GAL16V8
EP330
PLHS18P8
EP320
5c032
ATMEL GAL16V8
PALC22V10
ampal18p8
GAL16V8
LA4490
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL CMOS TECHNOLOGY, INC. Preliminary Data March 1989 TM Features Advanced CMOS EEPROM Technology High Performance, Low Power Consumption — tPD = 20ns, fmax= 37MHz — Icc = 55mA + 0.5mA/MHz EE Reprogrammability — Low risk reprogrammable inventory
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37MHz
12-configuration
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Untitled
Abstract: No abstract text available
Text: n n iii n . CMOS Programmable Electrically Erasable Logic Device A l W l l l a Semiconductors Pmduct Preview »m PEEL 20CG10-15 — Synchronous preset, asynchronous clear — Independent programmable output enables Features • Advanced CM O S EEPROM Technology
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20CG10-15
24-pin
PALC20G10
105mA
05mA/MHz
PEEL20CG10-15
PEEL20CG10-15
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Untitled
Abstract: No abstract text available
Text: GO UL D INC/ 6 0 U L D A M I •> GOULD A/HiLSemiconductors MOE D MOSS'Jib D O l E T ö B b ■ A M I CMOS Programmable Electrically Erasable Logic Device PEEL 20CG10 T-46-19 -07 Features ~\ Application Versatility — Replaces random SSI/MSI logic — Emulates 24-pin bipolar PAL devices
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PEELTM20CG10
T-46-19
65fnA
24-pin
24-pln
PALC20G10
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Untitled
Abstract: No abstract text available
Text: S4E D 4040707 DDQ1D50 ÖTb « I C T I C T INC , INC._ PEEL 20CG1 OA-15/PEEL™ 20CG1OAL-15 CMOS Programmable Electrically Erasable Logic Device Features T 'M b - i'î 'Ç n • Architectural Rexfciirryr I — 92 product term X 44 input AND array
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DDQ1D50
20CG1
OA-15/PEELâ
20CG1OAL-15
12-configuration
115mA
25MHz
24-pin
10-bit
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL C M O S MÔ4D7Q7 00DQ3SÖ 1 37E D Product Preview INTERNATIONAL CMOS TECHNOLOGY, INC. PEEL 20CG10-12/PEEL 20CG10=15 CMOS Programmable Electrically Erasable Logic Device Features • 1 Micron CMOS EEPROM Technology Architectural Flexibility — 92 product temi X 44 input AND array
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00DQ3SÃ
20CG10-12/PEEL
20CG10
12-configuration
105mA
20CG10-12
20CQ10-15
24-pin
PEEL20CQ10
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PEEL20CG10
Abstract: 20CG10 PEEL 20Cg10 PALC20G10
Text: PEEL 20CG10 AMI SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device Features February 1993 General Description The AMI PEEL20CG10 is a CMOS Programmable Electrically Erasable Logic device that provides a highperformance, low-power, reprogrammable,
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20CG10
PEEL20CG10
20CG10
PEEL 20Cg10
PALC20G10
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Untitled
Abstract: No abstract text available
Text: •> g o u l d A M I * Semiconductors CMOS Programmable Electrically Erasable Logic Device PEEL 20CG10 Features • A pplication Versatility — Replaces random SSI/MSI logic — Emulates 24-pin bipolar PAL devices — Convert 24-pin PAL and EPLD designs with
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20CG10
24-pin
PALC20G10
PEEL20CG10
PEEL22CG10
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Untitled
Abstract: No abstract text available
Text: SME 3> 4040707 0001040 =157 M I C T I C T INC , INC. PEEL 20CG10-25 ' ‘4 fe- W - 01 CMOS Programmable Electrically Erasable Logic Device Features • Advanced CMOS EEPROM Technology ■ High Performance, Low Power Consumption — tPD = 25ns, fmax= 33.3MHz
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20CG10-25
25MHz
12-conliguration
10-bit
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PEEL20CG10
Abstract: PALC20G10
Text: AMI PEEL 20CG10 SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device Features February 1993 General Description The AMI PEEL20CG10 is a CMOS Programmable Electrically Erasable Logic device that provides a highperformance, low-power, reprogrammable,
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20CG10
PEEL20CG10
480Kn
PALC20G10
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Untitled
Abstract: No abstract text available
Text: , INC._ PEEL 20CG10-25 CMOS Programmable Electrically Erasable Logic Device Features Advanced CMOS EEPROM Technology High Performance, Low Power Consumption — tp D = 25ns, fmax= 33.3MHz — Ice = 55mA + 0.5mA/MHz
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20CG10-25
12-configuration
10-bit
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Untitled
Abstract: No abstract text available
Text: , INC._ PEEL 20CG1 OA-10/PEEL™20CG1 OA-15 CMOS Programmable Electrically Erasable Logic Device Features Architectural Flexibility — 92 product term X 44 input AND array — Up to 22 inputs and 10 outputs — Independently programmable
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20CG1
OA-10/PEELâ
OA-15
12-configuration
105mA
20CG10A-10
20CG10A-15
10-bit
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Untitled
Abstract: No abstract text available
Text: INC. PEEL 20CG10-25 CMOS Programmable Electrically Erasable Logic Device Features • Advanced CMOS EEPROM Technology ■ Architectural Flexibility — 92 product term X 44 input AND array — Up to 22 inputs and 10 outputs — Independently programmable
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20CG10-25
12-configuration
25MHz
24-pin
10-bit
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Untitled
Abstract: No abstract text available
Text: , INC. PEEL 20CG1 OA-15/PEEL™ 20CG1OAL-15 C M O S Program m able Electrically Erasable Logic Device F e a tu re s • Advanced CMOS EEPROM Technology ■ Architectural Flexibility — 92 product term X 44 input AND array — Up to 22 inputs and 10 outputs
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20CG1
OA-15/PEELâ
20CG1OAL-15
12-configuration
115mA
25MHz
24-pin
10-bit
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Untitled
Abstract: No abstract text available
Text: •> GOULD AMI CMOS Programmable Electrically Erasable Logic Device Product Preview * Semiconductors PEEL 20CG10-15 — Synchronous preset, asynchronous clear — Independent programmable output enables Features • Advanced CM OS EEPROM Technology • Application Versatility
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20CG10-15
24-pin
PALC20G10
105mA
PEEL20CG10-15
PEEL20CG10
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL C M O S 5SE D 4flMQ707 DOOQMl 2 Product Preview INTERNATIONAL CMOS TECHNOLOGY, INC. 7 PEElIM 20CG10-12/PEE! 20CG1 0-15 CMOS Programmable Electrically Erasable Logic Device Features • 1 Micron CMOS EEPROM Technology Architectural Flexibility
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4flMQ707
20CG10-12/PEE!
20CG1
12-configuration
105mA
20CG10-12
20CG10-15
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