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    Catalog Datasheet MFG & Type Document Tags PDF

    hp dv5 schematic diagram free

    Abstract: schematic hp dv7 hp dv5 U804 u806 HOLTEK MICROELECTRONICS RTC001 U807 D ECHO schematic diagrams n117
    Text: Workview Design Kit User's Manual July 1998 Version 1.00 Preliminary Holtek Microelectronics Inc. TABLE OF CONTENT Chapter 1. Introduction Chapter 2. Installation Chapter 3. Before you start Chapter 4. Viewdraw – Workview schematic capture tool Chapter 5.


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    PC6015

    Abstract: No abstract text available
    Text: SI ERRA SEMI CONDUCTOR '»r SIERRA SEMICONDUCTOR ÇORP 47E ì> 0242010 0001724 T «SSC Semicustom Capability Analog, Digital and EEPROM combined on the same chip. Sierra is a leading supplier of m ixed-signal standard cell ASICs. The Com pany's unique Triple Technology process perm its the


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    PT6005

    Abstract: VSC300
    Text: V L S I TECHNOLOGY INC IflE D T3ÔÔ347 üüü32bfl 4 VLSI T ech n o lo gy, inc. VSC300 SERIES 1-MICRON HIGH-PERFORMANCE STANDARD CELL FEATURES • A dvanced 1-m icron draw n gate length , silicon gate C M O S , 2 -la ye r m etal technology • Fast design tu rn-around tim e w ith


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    32bfl VSC300 PT6005 PDF

    VGT300039

    Abstract: PT6045 VGT300022 PT6005
    Text: V L S I TECHNOLOGY INC 47 E D T3flfl34? n o n a T T a V L S I Tech n o lo gy , in c . 3 VTI T -H Z -d -C R VGT350/VGT353 LIBRARY I.O-MICRON GATE ARRAY SERIES FEATURES • Advanced 0.85-micron channel length, 1.0-micron gate length silicon gate CMOS technology


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    T3flfl34? VGT350/VGT353 85-micron VGT350/353 VGT300039 PT6045 VGT300022 PT6005 PDF

    R/CHN 041 diode

    Abstract: No abstract text available
    Text: V L S I Te c h n o l o g y in c . VGT300 SERIES 1.0-MICRON GATE ARRAY SERIES FEATURES ^ s • Advanced f.O microij/idrawn silicon gate'technutbgy • Seven array sizes from 30,300 to 246,500 available gates • Continuous Gate architecture for maximum layout efficiency


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    VGT300 R/CHN 041 diode PDF

    VLSI Technology

    Abstract: kt 714 schematic transistor modul trigger pt6005 vlsi design physical verification VGT300 "VLSI Technology Inc." PT6055 GAH 521 fabrimex
    Text: V L S I T ec h n o lo g y , in c . VGT300 SERIES 1.0-MICRON GATE ARRAY SERIES FEATURES s • Advanced f.O microp/fdrawn silicon gate'techrrology • Seven array sizes from 30,300 to 246,500 available gates • Continuous Gate architecture for maximum layout efficiency


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    VGT300 VLSI Technology kt 714 schematic transistor modul trigger pt6005 vlsi design physical verification "VLSI Technology Inc." PT6055 GAH 521 fabrimex PDF

    full subtractor circuit using decoder and nand ga

    Abstract: full subtractor circuit using nand gates PT6001 7474 d-flip flop PT6011 PT6021 VLSI Technology Kt 0912 PC6D10 PT6005
    Text: VLSI T e c h n o l o g y , in c . VGT200 SERIES CONTINUOUS GATE TECHNOLOGY 1.5-MICRON GATE ARRAY SERIES FEATURES DESCRIPTION • A vaila b le in th irte e n sizes from 960 to 54,000 usable gates The V G T 200 Series is an advanced, high performance C M O S gate array


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    VGT200 400-018-A-028 full subtractor circuit using decoder and nand ga full subtractor circuit using nand gates PT6001 7474 d-flip flop PT6011 PT6021 VLSI Technology Kt 0912 PC6D10 PT6005 PDF

    transistor t6055

    Abstract: C6052P T6055 VGT300077 NAND Micron PT6001 KT 829 PC6D00
    Text: V L S I TECHNOLOGY INC 1ÍE I 13afl3M7 D0G3SÖ4 S V L S I T echnology , in c . VGT300 SERIES 1.0-MICRON GATE ARRAY SERIES FEATURES DESCRIPTION ADVANCED DESIGN TOOLS • Advanced 1.0 m icron drawn) silicon gate technology The VGT300 Series of high-performance gate arrays is fabricated on an


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    13afl3M7 VGT300 transistor t6055 C6052P T6055 VGT300077 NAND Micron PT6001 KT 829 PC6D00 PDF

    PT6045

    Abstract: VSC370 PT6005
    Text: V L S I TECHNOLOGY INC 4 7E D • =1300347 V L S I Tech n o lo gy , in c . 0000070 7 ■ VTI 'T - v z - m VSC370 SERIES 1-MICRON HIGH-DENSITY STANDARD CELL LIBRARY FEATURES • Advanced 0.85-micron channel length, 1.0-micron gate length silicon gate CMOS technology


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    VSC370 85-micron 000fiö T-42-41 PT6045 PT6005 PDF

    ST CHN 021

    Abstract: 13003 PT6005 PT6001
    Text: V L S I TECHNOLOGY INC IflE D VLSI T ech n o lo g y T36Ô347 DGD3E7ti 3 in c . VSC320 SERIES 1-MICRON HIGH-DENSITY STANDARD CELL FEATURES • A dvanced 1-m icron drawn gate length , silicon gate C M O S , 2-layer metal technology • Fast design tu rn-around tim e w ith


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    VSC320 ST CHN 021 13003 PT6005 PT6001 PDF

    130 nm CMOS standard cell library

    Abstract: 180 nm CMOS standard cell library Synopsys 130 nm CMOS standard cell library ST C4002-1 VGC450/VGC453
    Text: V L S I Tech n o lo gy , in c . oec t a PRELIMINARY VGC450/VGC453 LIBRARY O.8-MICRON GATE A R R A Y S E R IE S FEATURES • Advanced 0.7-micron effective channel length , 0.8-micron (drawn gate length) silicon gate CMOS technology • Fully integrated with COMPASS


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    VGC450/VGC453 VGC453 VGC450 130 nm CMOS standard cell library 180 nm CMOS standard cell library Synopsys 130 nm CMOS standard cell library ST C4002-1 PDF

    nd02d2

    Abstract: No abstract text available
    Text: V L S I Technology, in c . PRELIMINARY VGC450/VGC453 LIBRARY 0.8-MICRON GATE ARRAY SERIES FEATURES • Advanced 0.7-micron effective channel length , 0.8-micron (drawn gate length) silicon gate CMOS technology • Fully integrated with COMPASS Design Automation's ASIC Design


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    VGC450/VGC453 VGC450/453 nd02d2 PDF

    PT6042

    Abstract: VGC453 model values for 0.18 micron technology cmos nd02d2
    Text: V L S I TECHNOLOGY INC T3aa3M? oooaaio □ M7E D V L S I T echn o lo gy , in c . VTI ' PRELIMINARY -0 9 VGC450/VGC453 LIBRARY O.8-MICRON GATE ARRAY SERIES FEATURES • Advanced 0.7-micron effective channel length , 0.8-micron (drawn gate length) silicon gate CMOS


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    VGC450/VGC453 VGC453 VGC450 PT6042 model values for 0.18 micron technology cmos nd02d2 PDF

    integrated circuit TL 2262

    Abstract: PT6042 180 nm CMOS standard cell library Synopsys compass ic ND02D2 0.03 um CMOS technology VSC470
    Text: V L S I TECHNOLOGY INC M7E D VTI V L S I T ech n o lo g y , in c . T - m PRELIMINARY - m VSC470 SERIES 0.8-MICRON HIGH-DENSITY STANDARD CELL LIBRARY FEATURES • Advanced 0.7-micron channel length, 0.8-micron drawn gate length silicon gate CMOS technology


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    VSC470 integrated circuit TL 2262 PT6042 180 nm CMOS standard cell library Synopsys compass ic ND02D2 0.03 um CMOS technology PDF

    full subtractor circuit using nand gates

    Abstract: pt6021 PC6D10 PT6041-5 VGT200 PT6011 subtractor using TTL CMOS PT6005 PT6021-5
    Text: s I TECHNOLOGY INC IflE =1300347 00032^2 1 • V LSI T e c h n o lo g y , in c. T~ 42-ll-C^ VAAST-INTELLIGENCE VGT200M SERIES GOVERNMENT PRODUCTS DIVISION CONTINUOUS GATE™ TECHNOLOGY Î3-M IC R 0N GATE ARRAY SERIES DESCRIPTION FEATURES Extensive Portable retargetable


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    VGT200M full subtractor circuit using nand gates pt6021 PC6D10 PT6041-5 VGT200 PT6011 subtractor using TTL CMOS PT6005 PT6021-5 PDF

    VGT200

    Abstract: full subtractor circuit using decoder and nand ga
    Text: VLSI T ec h n o lo g y , in c . VGT200 SERIES CONTINUOUS GATE TECHNOLOGY 1.5-MICRON GATE ARRAY SERIES FEATURES DESCRIPTION • Available in thirteen sizes from 960 to 54,000 usable gates The VGT200 Series is an advanced, high performance CMOS gate array


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    VGT200 400-018-A-028 full subtractor circuit using decoder and nand ga PDF

    PT6045

    Abstract: pt6021 PT6042 PC6013 PC6043 PC6015 pt6011 PC6D10 PC6001 pc6021
    Text: 1.5ji ANALOG CELL LIBRARY • All cells have power down mode where appropriate. • All analog specifications are typical, 5 V, 25°C, and use a single 5 V supply, unless otherwise indicated. ANALOG-TO-DIGITAL CONVERTERS CELL NAME ADC4BT ADC10B ADC12B HADC8B


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    ADC10B ADC12B 10-Bit 12-Bit DAC10B 17utput PT6045 pt6021 PT6042 PC6013 PC6043 PC6015 pt6011 PC6D10 PC6001 pc6021 PDF

    74XX573

    Abstract: 13OO3 13603 74X245 VY86C129 "vlsi technology" 2903x
    Text: V L S I TECHNOLOGY INC 47E D ^300347 QQQ7in VLSI Tech n o lo g y in c . 7 «VTI IL D D iD IM l^ W MEMC29K VY86C129 29000 FAMILY MEMORY CONTROLLER FEATURES 1/2/4-way Interleave ROM Controller • AMD 29000 RISC MPU-compatible chip set 2 chips Support for two HP-style Cartridge


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    16/32-bit 160-pin MEMC29K VY86C129 32-bit MEMC29K/LPIC 74XX573 13OO3 13603 74X245 VY86C129 "vlsi technology" 2903x PDF

    PT6042

    Abstract: No abstract text available
    Text: V L S I TECHNOLOGY I NC H7E J> T3flfl347 D a 0 ñ ñ 2 2 7 V L S I Tech n o lo gy , in c . - r - m PRELIMINARY VTI - m VSC450 SERIES O.8-MICRON HIGH-PERFORMANCE STANDARD CELL LIBRARY FEATURES • Advanced 0.7-micron channel length, 0.8-micron drawn gate length silicon


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    T3flfl347 VSC450 T-42-41 PT6042 PDF