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    PCHANNEL ENHANCEMENT MOSFET Search Results

    PCHANNEL ENHANCEMENT MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    PCHANNEL ENHANCEMENT MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MARKING CFK

    Abstract: code cfk marking code CFK Complementary MOSFETs P-Channel 1.8V MOSFET TLM832D
    Text: CTLDM7181-M832D SURFACE MOUNT TLMTM N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM7181M832D is a Dual complementary N-Channel and PChannel Enhancement-mode MOSFET, designed for


    Original     		CTLDM7181-M832D CTLDM7181M832D TLM832D 810mA 950mA, 18-September MARKING CFK code cfk marking code CFK Complementary MOSFETs P-Channel 1.8V MOSFET PDF

    Untitled

    Abstract: No abstract text available
    Text: FRX130D, FRX130R, FRX130H Radiation Hardened N-Channel Power MOSFETs December 2001 Features Description • 6A, 100V, rDS ON = 0.180Ω Fairchild has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and PChannel enhancement types with ratings from 100V to


    Original     		FRX130D, FRX130R, FRX130H 1000K 1E13n/cm2 1E14n/cm2 PDF

    SPP9527

    Abstract: P-Channel mosfet 40V mosfet gate source voltage 20v P-Channel Enhancement Mode
    Text: SPP9527 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP9527 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		SPP9527 SPP9527 -40V/-10A -40V/- P-Channel mosfet 40V mosfet gate source voltage 20v P-Channel Enhancement Mode PDF

    SPP5413

    Abstract: P-Channel mosfet 40V mosfet p-channel 10A
    Text: SPP5413 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP5413 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPP5413 has been designed specifically to improve the overall


    Original     		SPP5413 SPP5413 -40V/-10A -40V/- P-Channel mosfet 40V mosfet p-channel 10A PDF

    MARKING 4A sot-563

    Abstract: P-channel Dual MOSFET VGS -25V 035a lcd
    Text: SPP1023 Dual P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP1023 is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state


    Original     		SPP1023 SPP1023 MARKING 4A sot-563 P-channel Dual MOSFET VGS -25V 035a lcd PDF

    SPP1013

    Abstract: SC-89 SPP1013S52RG P-CHANNEL SPP1013S52RGB
    Text: SPP1013 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP1013 is the P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state


    Original     		SPP1013 SPP1013 -20V/0 SC-89 SPP1013S52RG P-CHANNEL SPP1013S52RGB PDF

    SPP9435S8RGB

    Abstract: SPP9435 SPP9435S8RG SPP9435S8TG
    Text: SPP9435 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP9435 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		SPP9435 SPP9435 -30V/-5 -30V/-4 SPP9435S8RGB SPP9435S8RG SPP9435S8TG PDF

    20V P-Channel Power MOSFET high current

    Abstract: P-CHANNEL SC89 Switching Power P-channel SC-89 SPP1013 SPP1013S52RG P-CHANNEL
    Text: SPP1013 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP1013 is the P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state


    Original     		SPP1013 SPP1013 -20V/0 20V P-Channel Power MOSFET high current P-CHANNEL SC89 Switching Power P-channel SC-89 SPP1013S52RG P-CHANNEL PDF

    SPP6506S26RG

    Abstract: SPP6506 P-Channel Junction Field Effect Transistors sot-23 MARKING CODE G1 06YW
    Text: SPP6506 Dual P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP6506 is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state


    Original     		SPP6506 SPP6506 SPP6506S26RG P-Channel Junction Field Effect Transistors sot-23 MARKING CODE G1 06YW PDF

    MOSFET

    Abstract: SPP2309 SPP2309S23RG Mosfet 1 cell switch low voltage low resistance
    Text: SPP2309 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2309 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		SPP2309 SPP2309 -20V/2 MOSFET SPP2309S23RG Mosfet 1 cell switch low voltage low resistance PDF

    Dual P-Channel mosfet sot-363

    Abstract: SC-70-6L SPP6308 SPP6308S36RG
    Text: SPP6308 Dual P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP6308 is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state


    Original     		SPP6308 SPP6308 Dual P-Channel mosfet sot-363 SC-70-6L SPP6308S36RG PDF

    SPP2301

    Abstract: SPP2301S23RG
    Text: SPP2301 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2301 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		SPP2301 SPP2301 -20V/-2 SPP2301S23RG PDF

    SPP9437

    Abstract: SPP9437S8RG SPP9437S8TG
    Text: SPP9437 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP9437 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		SPP9437 SPP9437 -30V/-5 -30V/-4 SPP9437S8RG SPP9437S8TG PDF

    P-Channel MOSFET 12V SOT 23

    Abstract: 12V 30A 3 pin mosfet mosfet vgs 5v 12V P-Channel Power MOSFET SPP2305 SPP2305S23RG 5V GATE TO SOURCE VOLTAGE MOSFET P-channel MOSFET VGS -25V
    Text: SPP2305 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2305 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		SPP2305 SPP2305 -15V/-3 P-Channel MOSFET 12V SOT 23 12V 30A 3 pin mosfet mosfet vgs 5v 12V P-Channel Power MOSFET SPP2305S23RG 5V GATE TO SOURCE VOLTAGE MOSFET P-channel MOSFET VGS -25V PDF

    SPP3413

    Abstract: SPP3413S23RG
    Text: SPP3413 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP3413 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		SPP3413 SPP3413 -20V/-3 SPP3413S23RG PDF

    P-channel power mosfet 30V

    Abstract: SPP3403 SPP3403S23RG
    Text: SPP3403 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP3403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		SPP3403 SPP3403 -30V/-2 P-channel power mosfet 30V SPP3403S23RG PDF

    P-Channel Junction Field Effect Transistors

    Abstract: SPP4925 Dual P-Channel MOSFET 30v
    Text: SPP4925 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP4925 is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to


    Original     		SPP4925 SPP4925 -30V/-7 -30V/-5 P-Channel Junction Field Effect Transistors Dual P-Channel MOSFET 30v PDF

    SPP4953S8RG

    Abstract: SPP4953S8RGB SPP4953
    Text: SPP4953 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP4953 is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to


    Original     		SPP4953 SPP4953 -30V/-5 -30V/-4 -30V/-3 SPP4953S8RG SPP4953S8RGB PDF

    spp4435b

    Abstract: SPP4435
    Text: SPP4435B P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP4435B is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		SPP4435B SPP4435B -30V/-9 -30V/-7 SPP4435 PDF

    SPP2341

    Abstract: MOSFET SPP2341S23RGB 41YW SPP2341S23RG P-Channel MOSFET 12V SOT 23 NO32
    Text: SPP2341 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2341 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		SPP2341 SPP2341 -20V/-3 -20V/-2 MOSFET SPP2341S23RGB 41YW SPP2341S23RG P-Channel MOSFET 12V SOT 23 NO32 PDF

    SPP1433

    Abstract: SPP1433S32RG marking td sot323 226 SOT-323
    Text: SPP1433 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP1433 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		SPP1433 SPP1433 -30V/-2 SPP1433S32RG marking td sot323 226 SOT-323 PDF

    SPP9435A

    Abstract: SPP9435AS8RG SPP9435AS8TG SPP9435
    Text: SPP9435A P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP9435A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		SPP9435A SPP9435A -30V/-5 -30V/-4 SPP9435AS8RG SPP9435AS8TG SPP9435 PDF

    mosfet sot353

    Abstract: p-channel mosfet sot-353 he Inverter P-Channel 1.8V MOSFET SPP1413A SPP1413AS35RG marking nc sot-353 sot-353 marking code
    Text: SPP1413A P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP1413A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		SPP1413A SPP1413A -20V/-3 mosfet sot353 p-channel mosfet sot-353 he Inverter P-Channel 1.8V MOSFET SPP1413AS35RG marking nc sot-353 sot-353 marking code PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF9520 S e m iconductor April 1999 Data Sheet -6A, -100V, 0.600 Ohm, P-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are PChannel enhancement mode silicon gate power field effect


    OCR Scan     		IRF9520 -100V, O-220AB -100V PDF