SPP2301 Search Results

SPP2301 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SPP2301		Unknown	P-Channel Enhancement Mode MOSFET		Original	PDF
SPP2301A		SYNC Power	P-Channel Enhancement Mode MOSFET		Original	PDF
SPP2301AS23RG		SYNC Power	P-Channel Enhancement Mode MOSFET		Original	PDF
SPP2301S23RG		SYNC Power	P-Channel Enhancement Mode MOSFET		Original	PDF

SPP2301 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
SPP2301A Abstract: SPP2301AS23RG P-CHANNEL Text: SPP2301A P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2301A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.	Original	SPP2301A SPP2301A -20V/-2 SPP2301AS23RG P-CHANNEL	PDF
SPP2301D Abstract: MOSFET P-channel SOT-23 SPP2301DS23RG P-Channel SOT-23 Power MOSFET SPP2301DS23RGB mosfet vgs 5v mosfet vgs 5v SOT23 24A SOT23 Text: SPP2301D P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2301D is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.	Original	SPP2301D SPP2301D -20V/-2 MOSFET P-channel SOT-23 SPP2301DS23RG P-Channel SOT-23 Power MOSFET SPP2301DS23RGB mosfet vgs 5v mosfet vgs 5v SOT23 24A SOT23	PDF
SPP2301A Abstract: MOSFET SPP2301AS23RGB SPP2301AS23RG Text: SPP2301A P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2301A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.	Original	SPP2301A SPP2301A -20V/-2 MOSFET SPP2301AS23RGB SPP2301AS23RG	PDF
SPP2301 Abstract: MOSFET SPP2301S23RGB sot 223 52 10a SPP2301S23RG Text: SPP2301 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2301 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.	Original	SPP2301 SPP2301 -20V/-2 MOSFET SPP2301S23RGB sot 223 52 10a SPP2301S23RG	PDF
sot-23 P-Channel MOSFET Abstract: MOSFET P-channel SOT-23 SPP2301 SPP2301S23RG Text: SPP2301 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2301 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.	Original	SPP2301 SPP2301 -20V/-2 sot-23 P-Channel MOSFET MOSFET P-channel SOT-23 SPP2301S23RG	PDF
SPP2301 Abstract: SPP2301S23RG Text: SPP2301 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2301 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.	Original	SPP2301 SPP2301 -20V/-2 SPP2301S23RG	PDF