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    PCN0407

    Abstract: FR4 substrate Substrate FR4 epoxy EPC16UC88 EPC16UC88AA
    Text: PROCESS CHANGE NOTIFICATION PCN0407 UFBGA 88 PACKAGE SUBSTRATE CHANGE Change Description: The substrate for the 88 Lead Ultra FineLine BGA package assembled by Sharp will change from polyimide tape to glass epoxy FR4. This change does not affect form, fit, or function.


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    PDF PCN0407 EPC16UC88 EPC16UC88AA. PCN0407 FR4 substrate Substrate FR4 epoxy EPC16UC88AA

    PCN0404

    Abstract: SUMITOMO g700l sumitomo EME G700L G700L TQFP 144 PACKAGE Compound SUMITOMO mold compound TQFP 144 PACKAGE altera G700
    Text: PROCESS CHANGE NOTICE PCN0404 ADDITIONAL MOLD COMPOUND FOR TQFP 144 PACKAGE Change Description: The Sumitomo G700L mold compound is being added as additional mold compound choice for selected Altera devices in thin quad flat pack TQFP 144 lead packages assembled by


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    PDF PCN0404 G700L PCN0404 SUMITOMO g700l sumitomo EME G700L TQFP 144 PACKAGE Compound SUMITOMO mold compound TQFP 144 PACKAGE altera G700

    Untitled

    Abstract: No abstract text available
    Text: Tel: +44 1460 256 100 Golledge Electronics Ltd Fax: +44 1460 256 101 Ashwell Park, Ilminster www.golledge.com Somerset, TA19 9DX, UK PRODUCT WITHDRAWAL NOTICE Document ref: Issued: Authorised: PCN040130A v1.0 30 Jan 04 JPG Products affected GVXO-25, GVXO-61, GVXO-63, VCXO2, VCXO2H, VCXO2V


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    PDF PCN040130A GVXO-25, GVXO-61, GVXO-63,

    Sn63pB37 tds

    Abstract: W3E32M64S-XSBX TSOP66
    Text: White Electronic Designs W3E32M64S-XSBX 32Mx64 DDR SDRAM FEATURES „ DDR SDRAM rate = 200, 250, 266, 333* „ Package: BENEFITS „ • 208 Plastic Ball Grid Array PBGA , 13 x 22mm „ 2.5V ±0.2V core power supply „ 2.5V I/O (SSTL_2 compatible) „ Differential clock inputs (CK and CK#)


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    PDF W3E32M64S-XSBX 32Mx64 Sn63pB37 tds W3E32M64S-XSBX TSOP66

    Untitled

    Abstract: No abstract text available
    Text: W3E32M64S-XSBX 32Mx64 DDR SDRAM FEATURES BENEFITS  DDR SDRAM rate = 200, 250, 266, 333*  73% Space Savings vs. FPBGA  Package: • 43% Space Savings vs TSOP • 208 Plastic Ball Grid Array PBGA , 13 x 22mm  Reduced part count  2.5V ±0.2V core power supply


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    PDF W3E32M64S-XSBX 32Mx64

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3E32M64S-XSBX 32Mx64 DDR SDRAM FEATURES BENEFITS „ DDR SDRAM rate = 200, 250, 266, 333* „ „ Package: „ • 208 Plastic Ball Grid Array PBGA , 13 x 22mm „ 2.5V ±0.2V core power supply „ 2.5V I/O (SSTL_2 compatible) „ Differential clock inputs (CK and CK#)


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    PDF W3E32M64S-XSBX 32Mx64 PCN04019 333Mbs

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3E32M64S-XSBX PRELIMINARY* 32Mx64 DDR SDRAM FEATURES BENEFITS DDR SDRAM rate = 200, 250, 266, 333* 73% SPACE SAVINGS vs. TSOP Package: • 43% Space Savings vs FPBGA • 208 Plastic Ball Grid Array PBGA , 13 x 22mm Reduced part count


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    PDF W3E32M64S-XSBX 32Mx64 333Mbs/166MHz PCN04019

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3E32M64S-XSBX 32Mx64 DDR SDRAM FEATURES BENEFITS DDR SDRAM rate = 200, 250, 266, 333* 73% Space Savings vs. FPBGA Package: • 43% Space Savings vs TSOP • 208 Plastic Ball Grid Array PBGA , 13 x 22mm Reduced part count 2.5V ±0.2V core power supply


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    PDF W3E32M64S-XSBX 32Mx64 PCN04019 333Mbs

    TSOP RECEIVER

    Abstract: W3E32M64S-XSBX Theta JC of FBGA
    Text: White Electronic Designs W3E32M64S-XSBX 32Mx64 DDR SDRAM FEATURES BENEFITS „ DDR SDRAM rate = 200, 250, 266, 333* „ „ Package: „ • 208 Plastic Ball Grid Array PBGA , 13 x 22mm „ 2.5V ±0.2V core power supply „ 2.5V I/O (SSTL_2 compatible) „ Differential clock inputs (CK and CK#)


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    PDF W3E32M64S-XSBX 32Mx64 TSOP RECEIVER W3E32M64S-XSBX Theta JC of FBGA

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3E32M64S-XSBX 32Mx64 DDR SDRAM FEATURES „ DDR SDRAM rate = 200, 250, 266, 333*, 400* „ Package: BENEFITS „ • 208 Plastic Ball Grid Array PBGA , 13 x 22mm „ 2.5V ±0.2V core power supply „ 2.5V I/O (SSTL_2 compatible) „


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    PDF 32Mx64 333Mbs 400Mbs

    IR 936

    Abstract: PCN055
    Text: Rectifier Diodes ~ Stud & fiat base types Type | V RRM Range If AV ^ T"cASE ^(RMS) @25°C IF @25°C IpSM(2) 10ms 10ms V r=s 60% VR« 1 0 V I2t (2) Irrm 10ms V0 @ Tj Max. ^RRM (Note 5) (Note 2) (Note 2) (Note 1) (V) (A) (°C) (A) (A) (A) (A) (Note 2) (A2S)


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    PDF SWXPCN012 SWxPCN020 SWxPGN030 SWxPCN040 SWxPCN055 SWXPCN075 SWXPHN300 SWxHHN300 SWxPHN320 SWXHHN320 IR 936 PCN055

    PHN300

    Abstract: PCN030
    Text: R ectifier D iodes ~ Stud & flat base types Type ^RR M ^F AV Range a» T ca se ^ F S M ( l) ^ F SM {2) I2 t (2) 1 10ms 10ms 10ms VR=s60% Vfi« 1 0 V IF ^ f (r m s ) @25°C @25°C I rrm v„ @ Tj Max. ^RR M (Note 5) (V) (A) (°C) (A) (A) (A) (A) (Note 2) (A2s)


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    PDF SWXPCN012 SWXPCN020 SWxPCN030 SWxPCN040 SWxPCN055 SWxPCN075 SWxPHN300 SWXHHN300 SWxPHN320 SWxHHN320 PHN300 PCN030

    pcn040

    Abstract: SWXPHN400 pcn075 PCN030 SWXHHN400 11175 SWXHHN320 ST1500 SWXKBR515 SWXKBR595
    Text: Rectifier D iodes ~ Stud & fiat base types V RRM Range If A V ^ T" c ASE IF @25°C ^F(RMS) @25°C IpSM (2) 10ms 10ms V r=s 60% VR« 1 0 V I2t l M* Type (2) 10ms V0 @ Tj Max. ^RBM (Note 2) (Note 2) (A) (°C) (A) (A) (A) (A) (Note 2) (A2S) (V) SWxPCN012 200-1200


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    PDF SWXPCN012 SWxPCN020 SWxPCN030 SWxPCN040 SWxPCN055 SWXPCN075 SWXPHN300 SWxHHN300 SWxPHN320 PCN075 pcn040 SWXPHN400 pcn075 PCN030 SWXHHN400 11175 SWXHHN320 ST1500 SWXKBR515 SWXKBR595

    WESTCODE PHN400

    Abstract: pcn040 21450 SW PCN040 PHN400 SW08PCN012 1520-T CXC16C CXC14C CXC935
    Text: UESTCODE SEMI CONDUCTORS 3TE D • =170^53 □□□2510 T «WESB . Ordering Stud and flat-base diodes are available in both Normal base cathode and Reverse (base anode) polarity. Use N or R respectively in code according to polarity required, e.g. N012 - normal polarity, R 012 reverse


    OCR Scan
    PDF SW08PCN012 SW12CXC300 36x30 16UNF 16UNF-2A WESTCODE PHN400 pcn040 21450 SW PCN040 PHN400 SW08PCN012 1520-T CXC16C CXC14C CXC935