W0808
Abstract: No abstract text available
Text: 70W CW 808nm VCSEL Array Submodule Part # PCW-CS1-70-W0808 • Vertical-Cavity Surface-Emitting Laser technology • Very high reliability, can operate at high temperatures up to 80 oC • Low thermal resistance (~0.16 oC/W) • Wavelength stabilized & Narrow spectral width (<1nm)
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808nm
PCW-CS1-70-W0808
W0808
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808nm 1W laser diode
Abstract: 808nm 1W 808nm W0808 PCW-CS-200-W0808 808nm VCSEL Laser diode laser 808nm 200mW laser diode 200mw
Text: 200mW Multi-Mode 808nm VCSEL Diode Part # PCW-CS-200-W0808 • • • • • Vertical-Cavity Surface-Emitting Laser technology >200mW CW multi-mode power at 808nm Circular, low-diverging beam Custom wavelengths available 808-1064nm Custom packaging available (submount, Cmount, TO can)
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200mW
808nm
PCW-CS-200-W0808
808nm
808-1064nm)
270mA,
200mW,
808nm 1W laser diode
808nm 1W
W0808
PCW-CS-200-W0808
808nm VCSEL Laser
diode laser 808nm 200mW
laser diode 200mw
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princeton
Abstract: heat exchanger prince 975nm
Text: 6W CW 975nm VCSEL Array on submount Part # PCW-CS3-6-W0975 • Vertical-Cavity Surface-Emitting Laser technology • Very high reliability, can operate at high temperatures up to 80 oC • Wavelength stabilized & narrow spectral width (<1nm) • Easily soldered to heat exchanger
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975nm
PCW-CS3-6-W0975
princeton
heat exchanger
prince
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PCW-CS-2-W0975
Abstract: princeton transistor BC 584
Text: 2W Multi-Mode 975nm VCSEL Part # PCW-CS-2-W0975 • Vertical-Cavity Surface-Emitting Laser technology • 2W multi-mode power at 975nm • Circular, low-diverging beam • Custom wavelengths available 808-1064nm Optical & Electrical Characteristics PARAMETER
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975nm
PCW-CS-2-W0975
975nm
808-1064nm)
PCW-CS-2-W0975
princeton
transistor BC 584
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prince
Abstract: princeton AU Optronics
Text: 40W CW 975nm VCSEL Array Submodule Part # PCW-CS1-40-W0975 • Vertical-Cavity Surface-Emitting Laser technology • Very high reliability, can operate at high temperatures up to 80 oC • Wavelength stabilized & Narrow spectral width (<1nm) • Easily soldered to heat exchanger
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975nm
PCW-CS1-40-W0975
808-1064nm)
prince
princeton
AU Optronics
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PDF
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PCW-CD-15-W0808
Abstract: No abstract text available
Text: 15W CW 808nm VCSEL Array C-mount Part # PCW-CD-15-W0808 • Vertical-Cavity Surface-Emitting Laser technology • Very high reliability, can operate at high temperatures up to 80 oC • Wavelength stabilized & narrow spectral width (<1nm) • Easily soldered to heat exchanger
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808nm
PCW-CD-15-W0808
PCW-CD-15-W0808
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PCW-CS3-6-W0808
Abstract: 808nm laser diode
Text: 6W CW 808nm VCSEL Array C-mount Part # PCW-CS3-6-W0808 • Vertical-Cavity Surface-Emitting Laser technology • Very high reliability, can operate at high temperatures up to 80 oC • Wavelength stabilized & narrow spectral width (<1nm) • Easily soldered to heat exchanger
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808nm
PCW-CS3-6-W0808
PCW-CS3-6-W0808
808nm laser diode
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princeton
Abstract: No abstract text available
Text: 40W CW 1064nm VCSEL Array Submodule Part # PCW-CS1-40-W1064 Preliminary • Vertical-Cavity Surface-Emitting Laser technology • Very high reliability, can operate at high temperatures (up to 80 oC) • Wavelength stabilized & Narrow spectral width (<1nm)
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1064nm
PCW-CS1-40-W1064
808-1064nm)
princeton
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laser diode 808nm narrow
Abstract: 808nm 47X4 AU Optronics PCW-CA1-40-W0808
Text: 40W CW 808nm VCSEL Array Submodule Part # PCW-CA1-40-W0808 • Vertical-Cavity Surface-Emitting Laser technology • Very high reliability, can operate at high temperatures up to 80 oC • Wavelength stabilized & Narrow spectral width (<1nm) • Easily soldered to heat exchanger
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808nm
PCW-CA1-40-W0808
laser diode 808nm narrow
47X4
AU Optronics
PCW-CA1-40-W0808
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princeton optronics
Abstract: 808nm laser diode
Text: 70W CW 808nm VCSEL Array on Micro-Channel-Cooler Part # PCW-CS1-70-W0808-MC • Vertical-Cavity Surface-Emitting Laser technology • Very high reliability, can operate at high temperatures up to 80 oC • Low thermal resistance (~0.16 oC/W) • Wavelength stabilized & Narrow spectral width (<1nm)
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808nm
PCW-CS1-70-W0808-MC
princeton optronics
808nm laser diode
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princeton
Abstract: AU Optronics
Text: 40W CW 975nm VCSEL Array Submodule Part # PCW-CA1-40-W0975 • Vertical-Cavity Surface-Emitting Laser technology • Very high reliability, can operate at high temperatures up to 80 oC • Wavelength stabilized & Narrow spectral width (<1nm) • Easily soldered to heat exchanger
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975nm
PCW-CA1-40-W0975
princeton
AU Optronics
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PDF
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princeton
Abstract: PCW-CS1-100-W0975
Text: 100W CW 975nm VCSEL Array on Micro-Channel-Cooler Part # PCW-CS1-100-W0975-MC • Vertical-Cavity Surface-Emitting Laser technology • Very high reliability, can operate at high temperatures up to 80 oC • Low thermal resistance (~0.16 oC/W) • Wavelength stabilized & Narrow spectral width (<1nm)
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975nm
PCW-CS1-100-W0975-MC
808-1064nm)
princeton
PCW-CS1-100-W0975
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princeton
Abstract: PCW-CS2-15-W0975
Text: 15W CW 975nm VCSEL Array Submodule Part # PCW-CS2-15-W0975 • Vertical-Cavity Surface-Emitting Laser technology • Very high reliability, can operate at high temperatures up to 80 oC • Wavelength stabilized & narrow spectral width (<1nm) • Easily soldered to heat exchanger
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975nm
PCW-CS2-15-W0975
princeton
PCW-CS2-15-W0975
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PDF
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pcwc
Abstract: No abstract text available
Text: EL2130C EL2130C :pcwcurrs HIGHPERFORMANCEANAtflS W 8£ MHz Current Feedback A mplifier F eatu res G eneral D escrip tion • —3 dB b an d w id th = 85 M H z, Av = 1 • —3 dB b an d w id th = 75 M H z, Av = 2 • N T S C /P A L dG ^ 0.03%, d P ^ T he EL2130 is a w ideband cu rren t m ode feedback am plifier op
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EL2130C
EL2130
100ft
pcwc
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT 4-BIT SINGLE-CHIP MICROCONTROLLER The ¿¡PD75P3018A replaces the ,uPD753017A’s internal mask ROM with a one-time PROM, and features expanded ROM capacity. The ¿¡PD75P3018A inherits the function of the ¿¡PD75P3018, and enables high-speed operation at
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PD75P3018A
uPD753017A
PD75P3018,
PD753012A,
53016A,
53017A,
PD753017
U11282E
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MIL-STD-8
Abstract: 510-1-01
Text: C H E R O K E E I N T E R N A T I O N A L , A S U B S I D I A R Y OF C O R E INC. I N D U S T R I E S PRODUCT SPECIFICATION QT9 Series M u ltip le O u tp u t S w itch in g Pow er S u pplie s Features * U I. R eco g n izcd io U L 1012 and 478 * AC input provisions:
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B1402+
0P-50
47-63H*
MIL-STD-8
510-1-01
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PDF
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Untitled
Abstract: No abstract text available
Text: ti -j i i I y 3 en i < K s i £ S-i Ïiíy 2 > o 5 ï = LL fj £ > GC o s < LkJ i a T3 UJ ÜC £L i ni ¡3 4 i _ f u 3 C O ü m £ tu co ÿ o J— m < u. ú£ •J : I < LO a rf ¡L Ia ja fl TT _¿J ~n x U § ± > Xi l¿ -i1 E * 5 C/D 1 5 ■il¿V _"ti> EL
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MSM54V16255A/SL_
J6M44
16-Bit
144-tvurd
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ALC100
Abstract: ST CD C226 VM036 BK1606 COD-51 LS-120 WD62 L420 eef 1208 PA6 GF 10 MD10
Text: D i a g r a m s M a in b o a r d G T LH W 3 b TLH A 6 T LH W S G TL H i« G T L H tf? GT L HA#6 \ U . tq : 02: I4 n : « ; K1 . ji ; s . m : G r. h i; » : pi . H . r ; E l, 0« . IB . 0) E2, IS . w . f t , ci 83 . A3 02, 2 1; Ai AS 84, C5 , g t lh w s
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0UF/16V
ALC100
ST CD C226
VM036
BK1606
COD-51
LS-120
WD62
L420
eef 1208
PA6 GF 10 MD10
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PDF
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75151
Abstract: No abstract text available
Text: 29 C IR C U IT N o. 3 A ^ if 'A T ^ F IG 1 CRECOMMEN0EO PANEL OPENING DIM ENSION 1 1 .S — n C * Ju W tW ^ W U DIRECTION C CONN.INSERTION FOR PANEL '7 / / / / T / 7 , « r//y // s / r r / z / J TT? >7A c r r iZ ^ f S crm 0 - □ i r T ^ f I. > y > y ^ > 7W V T77^ 7y»>>^V>^V7?7
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I7S273-C*
775T52
20--1SAWG>
22AWG3
T-124
75151
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PDF
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marking code nt
Abstract: Marking Code .sf marking code RKC pabi code marking RKC pabi 1002G 1004G 1006G SF1001G
Text: TAIWAN SEMICONDUCTOR SF1001G - SF1008G 10.0 AMPS. Glass Passivated Super Fast Rectifiers ¡0 RoHS COMPLIANCE TÛ-220AB •.W TOi vMVr.x ‘ T>?rn; F e atures ❖ <> -}• <> -}• i Hig h efficien c y , low VF High current capability High reliability Hig h s u rg e ou rre nt ca pabi lily
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SF1001G
SF1008G
TD-220AB
MIL-STD-202.
SF1008G)
marking code nt
Marking Code .sf
marking code RKC
pabi code
marking RKC
pabi
1002G
1004G
1006G
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Untitled
Abstract: No abstract text available
Text: LOAD CELL ISOLATED TRANSMITTER A FEATURES A ccuracy: ± 0 . 1 % RO. Steady v o lta g e, current and low ripple output W ide input and output range selection Plug in type MODEL: S4 • LD NO. A È O In p ut Rongo ÄJO. ?m V lV 3 m V /V Op dori DC O uipLii R;nUji!
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1213-10 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 40.5 dBm at 12.7 GHz to 13.2 GHz • High gain - G1dB = 6.0 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package
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TIM1213-10
2-11C1B)
MW50260196
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Untitled
Abstract: No abstract text available
Text: HSG. MATERIAL DESCRIP TION ! GLrSS F'LLED 1C? • . U L94V -Q_ f g l a s s f il l e d l c d 1 L U L 9 4 V - 0 _ "R F iR s n r - CO.3 | - 1.2710.15 I - H il iiif i y P 2; 3 V Hu m II I " J3d32q KS J400241 KS "R T ^ D " TVP(2 I II 0.5±0.1 mu I I I I I I I I I I I I I I I I I I I I I i I V
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J3d32q
J400241
68POS.
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Untitled
Abstract: No abstract text available
Text: A P M & K K D i D M [F [^ [M Ä T D © M in te i 82595TX ISA/PCMCIA HIGH INTEGRATION ETHERNET CONTROLLER Optimal Integration fo r Lowest Cost Solution — Glueless 8-B it/16-B it ISA /PCM CIA 2.0 Bus Interface — Provides Fully 802.3 Com pliant A ll I
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82595TX
it/16-B
it/32-B
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