Untitled
Abstract: No abstract text available
Text: DIODE PD20116 MODULE •OUTLINE DRAWING 200A 1600V 特長:大電流・小型(長さ108mm)外形品 用途:汎用インバータ用コンバータ ■最大定格 / Maximum Ratings Rating くり返しピーク逆電圧 *1 Repetitive Peak Reverse Voltage
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PD20116
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PD20116
Abstract: No abstract text available
Text: DIODE MODULE PD20116 200A/1600V OUTLINE DRAWING FEATURES * 108mm Short Size Case * Isolated Base * Dual Diodes Cascaded Circuit * High Surge Capability TYPICAL APPLICATIONS * Rectified For General Use Maximum Ratings Parameter Approx Net Weight:280g Symbol
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PD20116
00A/1600V
108mm
PD20116
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Untitled
Abstract: No abstract text available
Text: DIODE MODULE PD20116 200A/1600V OUTLINE DRAWING FEATURES * 108mm Short Size Case * Isolated Base * Dual Diodes Cascaded Circuit * High Surge Capability TYPICAL APPLICATIONS * Rectified For General Use Maximum Ratings Parameter Approx Net Weight:280g Symbol
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108mm
00A/1600V
PD20116
PD20116
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PD20116
Abstract: No abstract text available
Text: DIODE 200A Avg 1600 Volts •回路図 CIRCUIT 1 PD20116 ■外形寸法図 OUTLINE DRAWING 2 D1 (単位 Dimension:mm) 3 D2 ■最大定格 Maximum Ratings 項 目 Parameter くり返しピーク逆電圧 *1 Repetitive Peak Reverse Voltage
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PD20116
150VRM
25IFM
PD20116
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Untitled
Abstract: No abstract text available
Text: DIODE PD20116 MODULE •OUTLINE DRAWING 200A 1600V 特長:大電流・小型(長さ108mm)外形品 用途:汎用インバータ用コンバータ ■最大定格 / Maximum Ratings Rating くり返しピーク逆電圧 *1 Repetitive Peak Reverse Voltage
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PD20116
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PT76S16
Abstract: d2n203le 10ERB20 508RP FCHS20A 300MCB
Text: Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
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508RP
Abstract: 10ERB20 d2n202le D2W220CD FCH10U15 FCU20A40
Text: NO. 42 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
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PDM5001
Abstract: PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16
Text: Contents Page Rectifier Diode PH PC PD PE PF PB PT C2 C3 C4,C5 C5 C6 C6 C7,C8 Fast Recovery Diode PH-F, PC-F, PD-F P2H-F C9 C10 Schottky Barrier Diode PC-Q, PE-Q, PQ-Q P2H-Q C11 C12 Thyristor plus Diode PHT PDT PAT PFT PAH PCH PDH PKH PBH, PBH-A, PBF PGH
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C3557
PH1503
PH150
PDM5001
PDT400N16
pah60n8cm
PHMB50E6CL
PHT250N16
PHT400N16
PD100KN16
PAH100N8CM
PT76S16
PAT400N16
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FCGS20A12
Abstract: FCHS10A12 EC10QS04 TE12L d2n203le 10ERA60 FCHS20A 20NFB60 FCU20A40 PAH100N8CM 10eda10
Text: NO. 43 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
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