D2111A

Abstract: uPD2111 uPD2111AL-4 SP-2111 sp2111 uPD2111AL-2 2111A
Contextual Info: SEC NEC Microcomputers, Inc. /x PD2111 a l /¿PD2111AL-2 /I.PD2111AL-4 1024 BIT 256 x 4 STATIC MOS RAM WITH COMMON I/O AND OUTPUT DISABLE D E S C R IP T IO N The ¡J.P D 2111 A L is a 256 words by 4 bits static random access m em ory fabricated w ith N-channel MOS technology. It uses fu lly static c irc u itry and therefore requires no

PD2111

Abstract: 403CNQ100PBF 403CNQ 40HF P460
Contextual Info: Bulletin PD-21111 12/05 403CNQ100PbF SCHOTTKY RECTIFIER 400 Amp LUG TERMINAL ANODE 1 LUG TERMINAL ANODE 2 BASE COMMON CATHODE Major Ratings and Characteristics Characteristics Description/ Features Values Units IF AV Rectangular 400 A VRRM 100 V 25,500 A

800H

Abstract: HN29V51211 HN29V51211T-50
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Contextual Info: Bulletin PD-21116 04/06 HFA210NJ60CPbF HEXFREDTM Ultrafast, Soft Recovery Diode Features LUG TERMINAL ANODE 1 • Very Low Qrr and trr • Lead-Free LUG TERMINAL ANODE 2 Benefits • Reduced RFI and EMI • Reduced Snubbing BASE COMMON CATHODE Description/ Applications

Contextual Info: Bulletin PD-21111 12/05 403CNQ100PbF SCHOTTKY RECTIFIER 400 Amp LUG TERMINAL ANODE 1 LUG TERMINAL ANODE 2 BASE COMMON CATHODE Major Ratings and Characteristics Characteristics Description/ Features Values Units IF AV Rectangular 400 A VRRM 100 V 25,500 A

Contextual Info: Bulletin PD-21110 12/05 401CNQ.PbF SERIES SCHOTTKY RECTIFIER 400 Amp LUG TERMINAL ANODE 1 LUG TERMINAL ANODE 2 BASE COMMON CATHODE Description/ Features Major Ratings and Characteristics Characteristics Values Units 400 A VRRM range 40 - 45 V IFSM @ tp = 5 µs sine

800H

Abstract: HN29V51211T-50H
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

AH10T

Abstract: hn29w12811t-50 Hitachi DSA00170
Contextual Info: HN29W12811 シリ−ズ 128M AND type Flash Memory More than 8,029-sector 135,657,984-bit ADJ-203-551A (Z) ’00. 9. 4 暫定仕様 Rev. 0.1 概要 HN29W12811 シリ−ズは単一電源(3.3V)で自動書き込みおよび自動消去が可能な多値 AND型メモリセル

HFA320NJ40CPBF

Abstract: IRFP250
Contextual Info: Bulletin PD-21115 04/06 HFA320NJ40CPbF HEXFRED TM Ultrafast, Soft Recovery Diode Features LUG TERMINAL ANODE 1 • Very Low Qrr and trr • Lead-Free LUG TERMINAL ANODE 2 Benefits • Reduced RFI and EMI • Reduced Snubbing BASE COMMON CATHODE Description/ Applications

IRFP250

Contextual Info: Bulletin PD-21116 04/06 HFA210NJ60CPbF HEXFREDTM Ultrafast, Soft Recovery Diode Features LUG TERMINAL ANODE 1 • Very Low Qrr and trr • Lead-Free LUG TERMINAL ANODE 2 Benefits • Reduced RFI and EMI • Reduced Snubbing BASE COMMON CATHODE Description/ Applications

Microwave PIN diode

Abstract: PD650 PD217 PD350 PD450 PD630 PDF311 Micro-Precision Technologies PD2112 PD1050
Contextual Info: 7 P MICROWAVE PIN DIODE DRIVERS w l — FEATURES: • -6 5 ° TO +150°C STORAGE TEMP RANGE • -5 5 ° TO +125°C OPERATING TEMP RANGE MODEL OUTPUT CURRENT DC mA POSITIVE NEGATIVE MIN MAX MIN MAX MIN PEAK mA) POS NEG OUTPUT VOLTAGE OPEN CKT (VEE = -1 2 )

Hitachi DSA00281

Contextual Info: HN29W25611 Series 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-995C (Z) Rev. 2.0 May. 11, 2001 Description The Hitachi HN29W25611 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are

Contextual Info: Bulletin PD-21117 04/06 HFA280NJ60CPbF HEXFREDTM Ultrafast, Soft Recovery Diode Features LUG TERMINAL ANODE 1 • Very Low Qrr and trr • Lead-Free LUG TERMINAL ANODE 2 Benefits • Reduced RFI and EMI • Reduced Snubbing BASE COMMON CATHODE Description/ Applications

800H

Abstract: HN29V102414 HN29V102414T-50 Hitachi DSA0047
Contextual Info: HN29V102414 Series 1G AND type Flash Memory More than 32,113-sector 542,581,248-bit x 2 ADE-203-1265A (Z) Preliminary Rev. 0.1 Jul. 25, 2001 Description The Hitachi HN29V102414 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are

21119

Abstract: MBR0530PBF MBR0530
Contextual Info: Bulletin PD-21119 rev. A 08/06 MBR0530PbF SCHOTTKY DIODE 0.5 Amp IF AV = 0.5Amp VR = 30V Description/ Features Major Ratings and Characteristics Characteristics Value Units I F(AV) (DC) 0.5 A VRRM 30 V IFSM @ tp= 10 ms sine 10 A 0.35 V - 65 to 150 °C VF

800H

Abstract: M5M29F25611VP SA10 MITSUBISHI GATE ARRAY mitsubishi S-A11
Contextual Info: MITSUBISHI LSIs M5M29F25611VP MORE THAN 16,057 SECTORS 271,299,072 BITS CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY DESCRIPTION The MITSUBISHI M5M29F25611 is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities

40HF

Abstract: P460 409cnq150pbf
Contextual Info: Bulletin PD-21112 12/05 409CNQ.PbF SERIES SCHOTTKY RECTIFIER 400 Amp LUG TERMINAL ANODE 1 LUG TERMINAL ANODE 2 BASE COMMON CATHODE Description/ Features Major Ratings and Characteristics Characteristics Values Units IF AV Rectangular 400 A 135 - 150 V 20000

IRFP250

Abstract: TA 21117
Contextual Info: Bulletin PD-21117 04/06 HFA280NJ60CPbF HEXFREDTM Ultrafast, Soft Recovery Diode Features LUG TERMINAL ANODE 1 • Very Low Qrr and trr • Lead-Free LUG TERMINAL ANODE 2 Benefits • Reduced RFI and EMI • Reduced Snubbing BASE COMMON CATHODE Description/ Applications

800H

Abstract: HN29V25611A HN29V25611AT-50 D2111
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Hitachi DSA00276

Contextual Info: HN29V51211 Series 512M AND type Flash Memory More than 32,113-sector 542,581,248-bit ADE-203-1221A (Z) Preliminary Rev. 0.1 May. 10, 2001 Description The Hitachi HN29V51211 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are

O2-A2

Abstract: 800H HN29V51211 HN29V51211T-50
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

800H

Abstract: ADE-203-1178A HN29W25611T HN29W25611T-50H sa 2111 Hitachi DSA00358
Contextual Info: HN29W25611T-50H 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-1178A (Z) Rev. 1.0 May. 10, 2000 Description The Hitachi HN29W25611T is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are controlled

Contextual Info: Bulletin PD-21117 04/06 HFA280NJ60CPbF HEXFREDTM Ultrafast, Soft Recovery Diode Features LUG TERMINAL ANODE 1 • Very Low Qrr and trr • Lead-Free LUG TERMINAL ANODE 2 Benefits • Reduced RFI and EMI • Reduced Snubbing BASE COMMON CATHODE Description/ Applications

Contextual Info: Bulletin PD-21110 12/05 401CNQ.PbF SERIES SCHOTTKY RECTIFIER 400 Amp LUG TERMINAL ANODE 1 LUG TERMINAL ANODE 2 BASE COMMON CATHODE Description/ Features Major Ratings and Characteristics Characteristics Values Units 400 A VRRM range 40 - 45 V IFSM @ tp = 5 µs sine