424210-60-G

Abstract: d424210
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT « P D 424210 4 M -BIT DYNAMIC RAM 256K-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The f i PD424210 is a 262,144 words by 16 bits CM OS dynam ic RAM with optional EDO. EDO is a kind of page mode and is useful for the read operation.

K1537

Contextual Info: NEC NEC Electronics Inc. Description The ¿/PD424263A/L and /iPD42S4263A/L are fast-page dynam ic RAMs w ith the w rite-per-bit option, organized as 262,144 words by 16 bits, and designed to o p e ra te from a single pow er supply. Optional features are power supply voltage + 5 V or

Contextual Info: 1^ 1 W NEC Electronics Inc. PD424260A/L, 42S4260A/L 262,144 X 16-Bit Dynamic CMOS RAM Preliminary Information Description The /L/PD424260A/L and /JPD42S4260A/L are fast-page dynamic RAMs organized as 262,144 words by 16 bits and designed to operate from a single power supply:

Contextual Info: PRELIMINARY PRODUCT INFORMATION NEC MOS INTEGRATED CIRCUIT MC-421000AD72 1M -WORD BY 72-BIT DYNAMIC RAM MODULE FAST PAGE MODE ECC Description The MC-421000AD72 is a 1 048 576 words by 72 bits dynamic RAM module on which 4 pieces of 16M DRAM (/i PD4218160) and 2 pieses of 4M DRAM ( p PD424400)

VG264265B

Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
Contextual Info: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D

Contextual Info: NEC PD424900A/L, 42S4900A/L 524,288 X 9-Bit Dynamic CMOS RAM NEC Electronics Inc. Description The ¿/PD424900A/L and /UPD42S4900A/L are fast-page dynam ic RAMs organized as 524,288 words by 9 bits a nd designed to o p e ra te from a single power supply. O ptional features are pow er supply voltage + 5 V or

nec 424256

Abstract: 424256 PD424256 UPD424256 PD424256-12 PD424256-10 424256 nec
Contextual Info: NEC HPD 424256 262,144 x 4-BIT DYNAMIC CM OS RAM NEC Electronics Inc. Description T he //PD424256 is a fast-page, 262,144-word by 4-bit dynam ic C M O S R A M designed to operate from a sin g le +5-volt pow er supply. T he device is fabricated with advanced p o ly c id e te ch n o lo g y using trench

Contextual Info: NEC ¡j PD424102 4,194,304 X 1-Bit Dynamic CMOS RAM NEC Electronics Inc. Description Pin Configurations T h e /PD424102 is a static-colum n dynam ic RAM orga­ nized as 4,194,304 words by 1 bit and designed to operate from a single + 5-volt power supply. Advanced

D4242

Abstract: 3V07
Contextual Info: NEC NEC Electronics Inc. Description The /L/PD424263A/L and /iPD42S4263A/L are fast-page dynam ic RAMs w ith the w rite-per-bit option, organized as 262,144 words by 16 bits, and designed to o p e ra te from a single pow er supply. Optional features are pow er supply voltage + 5 V or

Contextual Info: SEC PD424280A/L, 42S4280A/L 262,144 X 18-Bit Dynamic CMOS RAM NEC Electronics Inc. Description The ^PD424280A/L and ¿/PD42S4280A/L are fast-page dynamic RAMs organized as 262,144 words by 18 bits and designed to operate from a single power supply. Optional features are power supply voltage +5 V or

Contextual Info: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT M C-421000A32 1 M-WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description Th e M C -4 210 00A 32 is a 1,0 48,5 76 w o rd s by 32 b its dyn am ic RAM m o d u le on w hich 8 p ie ce s of 4 M DRAM: ¿/PD424400 are assembled.

PD424

Abstract: RAS 0501
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD424400 4 M-BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE Description The µ PD424400 is a 1,048,576 words by 4 bits CMOS dynamic RAM. The fast page mode capability realizes high speed access and low power consumption.

424100-70

Contextual Info: bM2 7 SSS 0 0 4 1 7 ^ 3 0 1 S •NECEj DATA SHEET NEC M OS INTEGRATED CIRCUIT ELECTRON D EVICE /¿PD424100-L 4M BIT DYNAMIC CMOS RAM FAST PAGE MODE DESCRIPTION The NEC ¿(PD424100-L is a 4194304-w ord by 1 bit dynam ic CM O S RAM w ith optional fast page m ode. CM OS

Contextual Info: nue 2 « SEC NEC Electronics Inc. PD424256 262,144 X 4-Bit Dynamic CMOS RAM July 1992 Description The¿/PD424256 is a fast-page dynamic RAM organized as 262,144 words by 4 bits and designed to operate from a single + 5-volt power supply. Advanced polycide

424410

Contextual Info: , 4 PD424410 1,048,576 X 4-Bit Dynamic CMOS RAM NEC Electronics Inc. March 1992 Pin Identification The /L/PD424410 is a 1,048,576 by 4-bit dynamic RAM designed with a write-per-bit option to operate from a single +5-volt power supply. Advanced polycide tech­

d424100

Abstract: 83IH-5695B
Contextual Info: f/PD424100 4,194,304 X 1-Bit Dynamic CMOS RAM W Mid W NEC Electronics Inc. D escription Pin C o n fig uratio n s T h e ¡j P D424100 is a fast-page dynamic RAM organized as 4,194,304 words by 1 bit and designed to operate from a single + 5-volt power supply. Advanced polycide

d424400

Abstract: d424400gs D424400G
Contextual Info: NEC MOS INTEGRATED CIRCUIT /¿PD424400-L 4 M-BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE Description The ^PD424400-L is a 1 048 576 words by 4 bits dynamic CMOS RAM. The fast page mode capability realize high speed access and low power consumption. These are packed in 26-pin plastic TSOP II , 26-pin plastic SOJ and 20-pin plastic ZIP.

Contextual Info: NEC #|PD424101 4,194,304 X 1-Bit Dynamic CMOS RAM NEC Electronics Inc. Description Pin Identification T he ¿/PD424101 is a nibble-mode d yn am ic RAM orga­ nized a s 4,194,304 w ords by 1 bit and d esign ed to o perate from a sin g le +5-volt power supply. A dvanced

pd424800

Abstract: nec 424800
Contextual Info: m PD424800 524,288 x 8-Bit Dynamic CMOS RAM e NEC Electronics Inc. PRELIMINARY INFORMATION Description Pin Configurations The PD424800 is a fast-page dynamic RAM organized as 524,288 words by 8 bits and designed to operate from a single + 5-volt power supply. Advanced polycide

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / M C -4 2 1 0 0 0 A A 6 4 F A 1 M-WORD BY 64-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-421000AA64FA is a 1,048,576 words by 64 bits dynamic RAM m odule on w hich 16 pieces o f 4 M DRAM: //PD424400 are assembled.

6607A

Abstract: UPD42S4280 UPD424280 upd 40pin D4242
Contextual Info: SEC NEC Electronics Inc. Description The ¿/PD424280A/L and /iPD42S4280A/L are fast-page dynamic RAMs organized as 262,144 words by 18 bits and designed to operate from a single power supply. Optional features are power supply voltage + 5 V or + 3.3 V and a new refresh mode called “self-refresh."

MC-424000A8

Contextual Info: N EC MOS INTEGRATED CIRCUIT MC-424000A8 SERIES 4 M-WORD BY 8-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-424000A8 is a 4 194 304 words by 8 bits dynamic RAM m odule on which 8 pieces of 4M DRAM ¿(PD424100 are assembled. This module provides high density and large quantities o f m em ory in a small space w ith o u t utilizing the

SA9C

Contextual Info: i E C ELECTRONICS INC blE D LUh V NEC Electronics Inc. • b427525 0D337b3 2b4 BINECE PD424900A/L, 42S4900A/L 524,288 x 9-Blt Dynamic CMOS RAM T - Description The ¿/PD424900A/L and ^PD42S4900A/L are fast-page dynamic RAMs organized as 524,288 words by 9 bits

d424256

Abstract: PD424256 uPD424256 B31h D4242
Contextual Info: m ¿PD424256 262,144 X 4-Bit Dynamic CMOS RAM e NEC E lectronics Inc. Description The ¡j PD424256 is a fast-page dynamic RAM organized as 262,144 words by 4 bits and designed to operate from a single + 5-volt power supply. Advanced polycide technology using trench capacitors minimizes silicon