4218160-60
Abstract: 4218160 IC-3217 4218160G5 UPD42S18160LE-60 PD42S18160
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD42S18160, 4218160 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The µ PD42S18160, 4218160 are 1,048, 576 words by 16 bits CMOS dynamic RAMs. The fast page mode and byte read/write mode capability realize high speed access and low power consumption.
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PD42S18160,
16-BIT,
PD42S18160
50-pin
42-pin
VP15-207-2
4218160-60
4218160
IC-3217
4218160G5
UPD42S18160LE-60
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4218165
Abstract: PD42S18165 4218165-60 PD4-2S18165
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD42S18165, 4218165 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The µ PD42S18165, 4218165 are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional hyper page mode. Hyper page mode is a kind of the page mode and is useful for the read operation.
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PD42S18165,
16-BIT,
PD42S18165
50-pin
42-pin
PD42S18165G5,
4218165
4218165-60
PD4-2S18165
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drc Rotary encoder
Abstract: UPC157C
Text: Preliminary Application Note TM V850E/MS1 32-/16-Bit Single-Chip Microcontrollers Hardware PPD703100 PPD703101 PPD703102 PPD70F3102 Document No. U14214EJ1V0AN00 1st edition Date Published August 1999 N CP(K) Printed in Japan 1999 [MEMO] 2 Preliminary Application Note U14214EJ1V0AN00
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V850E/MS1
32-/16-Bit
PPD703100
PPD703101
PPD703102
PPD70F3102
U14214EJ1V0AN00
u2/9044
drc Rotary encoder
UPC157C
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-42S1000LAD32S SERIES 1 M-WORD BY 32-BIT DYNAMIC RAM MODULE SO DIMM FAST PAGE MODE Description The MC-42S1000LAD32S series is a 1,048,576 words by 32 bits dynamic RAM module (Small Outline DIMM) on which 2 pieces of 16 M DRAM: ^PD42S18160L are assembled.
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MC-42S1000LAD32S
32-BIT
PD42S18160L
M72S-50A4
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hilti te 24
Abstract: hilti te 17 GO 440 104 esm 433 rac
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿P D 42S18165L , 4 2 1 8 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The .¿/PD42S18165L, 4218165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EOO
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42S18165L
16-BIT,
uPD42S18165L
uPD4218165L
/iPD42S18165L,
4218165L
50-pin
42-pin
1R35-207-3
hilti te 24
hilti te 17
GO 440
104 esm 433 rac
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LA80P
Abstract: marking 80L
Text: b427525 0042407 Tbb « N E C E MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 1 8 0 L , 4 2 S 1 7 1 8 0 L , 4 2 S 1 8 1 8 0 L 16 M BIT D Y N A M IC RAM 3 .3 V FAST PAGE M O DE & BYTE R E A D /W R IT E M O DE -PRELIMINARY-DESCRIPTION The NEC ^PD42S16180L, u PD42S17180L and n PD42S18170L are 1 048 576 words by 18 b its
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b427525
uPD42S16180L
uPD42S17180L
uPD42S18170L
475mil)
P32VF-100-475A
P32VF-100-475A
LA80P
marking 80L
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4218160-60
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT _ /IPD42S 1 8 1 6 0 ,4218160 16 M BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The ^PD42S18160, 4218160 are 1,048,576 words by 16 bits CMOS dynam ic RAMs. The fast page mode
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uPD42S18160
uPD4218160
16-BIT,
PD42S18160,
jiPD42S18160
50-pin
42-pin
iPD42S18160-60,
VP15-207-2
4218160-60
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD42S18160L, 4218160L 3.3 V OPERATION 16 M BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The ^PD42S18160L, 4218160L are 1,048,576 words by 16 bits CMOS dynamic RAMs. The fast page mode
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uPD42S18160L
uPD4218160L
16-BIT,
PD42S18160L,
4218160L
iPD42S18160L
50-pin
42-pin
JJPD42S18160L-A70,
4218160L-A
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M1314
Abstract: PD42S18160 4218160LE-60
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT //PD42S18160, 4218160 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /¿PD42S18160, 4218160 are 1,048,576 words by 16 bits CMOS dynamic RAMs. The fast page mode and byte read/write mode capability realize high speed access and low power consumption.
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16-BIT,
uPD42S18160
uPD4218160
PD42S18160
50-pin
42-pin
PD42S18160-60,
PD42S18160-70,
M1314
4218160LE-60
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PD42S
Abstract: No abstract text available
Text: b427525 GQ4HSbT TEI « N E C E MOS INTEGRATED CIRCUIT jtiP D 4 2 S 1 6 1 9 0 L , 4 2 S 1 7 1 9 0 L , 4 2 S 1 8 1 9 0 L 16 M B IT D Y N A M IC RA M 3 .3 V FA ST P A G E M O D E & B Y T E W R IT E M O D E P R E LIM IN A R Y -D E S C R IP T IO N The NEC n PD42S16190L. ^ PD42S17190L and // PD42S18190L a re 1 048 576 words by 18 b i t s
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b427525
uPD42S16190L
uPD42S17190L
uPD42S18190L
b427525
0042bE
475mil)
P32VF-100-475A
P32VF-100-475A
PD42S
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b427SES
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT >IEC PD42S18165,4218165 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The /j PD42S18165, 4218165 are 1 048 576 words by 16 bits CMOS dynam ic RAMs w ith optional hyper page
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PD42S18165
16-BIT,
PD42S18165,
/iPD42S18165,
50-pin
42-pin
fiPD42S
iPD42S
42S18165
P42LE-400A
b427SES
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4N500
Abstract: IC 741 cn
Text: b427555 GG42530 Tfc.7 « N E C E / / MOS INTEGRATED CIR CU IT ju P D 4 2 S 1 6 1 9 0 , 4 2 S 1 7 1 9 0 , 4 2 S 1 8 1 9 0 16 M B IT D Y N A M IC RAM FA S T PA G E M O D E & B Y T E W R IT E M O DE - P R E LIM IN A R Y -D E S C R IP T IO N
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b427555
GG42530
uPD42S16190
uPD42S17190
uPD42S18190
475mil)
P32VF-100-475A
P32VF-100-475A
4N500
IC 741 cn
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UPD42S18160G5-70-7-JF
Abstract: UPD42S18160G5707JF uPD42S18160-50 UPD4216160G uPD42S18160G5-50-7JF UPD4216160G5-50 PD42S18160-60 UPD42S18160G5-60-7JF NEC 4216160 UPD4218160G5-80-7JF
Text: DATA SHEET / MOS INTEGRATED CIRCUIT / PD42S16160,4216160,42S18160,4218160 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE D e s c rip tio n The /xPD42S16160, 4216160, 42S18160, 4218160 are 1,048, 576 words by 16 bits CMOS dynamic RAMs. The
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uPD42S16160
uPD4216160
uPD42S18160
uPD4218160
16-BIT,
/xPD42S16160,
42S18160,
PD42S16160,
42S18160
50-pin
UPD42S18160G5-70-7-JF
UPD42S18160G5707JF
uPD42S18160-50
UPD4216160G
uPD42S18160G5-50-7JF
UPD4216160G5-50
PD42S18160-60
UPD42S18160G5-60-7JF
NEC 4216160
UPD4218160G5-80-7JF
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LE347
Abstract: toba Q 0265 R HS 8180 42S18180
Text: L427S2S DQ4 2 4 M4 b 70 • NECE MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 1 8 0 ,4 2 S 1 7 1 8 0 ,4 2 S 1 8 1 8 0 16 M BIT D Y N A M IC RAM FAST PAGE M O D E & BYTE R E A D /W R IT E M ODE - P R E LIM IN A R Y -D ESCRIPTIO N
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L427S2S
uPD42S16180
uPD42S17180
uPD42S18180
475mil)
P32VF-100-475A
LE347
toba
Q 0265 R
HS 8180
42S18180
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D42S18160
Abstract: d42s181 D42S1816 UPD42S18160LG5A-60
Text: D A T A SHEET / MOS INTEGRATED CIRCUIT /¿ P D 4 2 S 1 6 1 6 0 L , 4 2 1 6 1 6 0 L. 4 2 S 1 8 1 6 0 L , 4 2 1 8 1 6 0 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /¿PD42S16160L, 4216160L, 4 2S 18160L, 4 2 18160L are 1,048, 576 w ords by 16 bits CMOS dynam ic RAMs.
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16-BIT,
uPD42S16160L
uPD4216160L
uPD42S18160L
uPD4218160L
PD42S16160L,
18160L
50-pin
42-pin
D42S18160
d42s181
D42S1816
UPD42S18160LG5A-60
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Untitled
Abstract: No abstract text available
Text: DATA SHEET M O S INTEGRATED CIRCUIT MC-42S1000LAD32S SERIES 1 M -W ORD BY 32-BIT DYN AM IC RA M M ODULE SO D IM M FAST PAGE MODE Description TheMC-42S1000LAD32S series is a 1,048,576 words by 32 bits dynamic RAM module (Small Outline DIMM) on which 2 pieces of 16 M DRAM: /PD42S18160L are assembled.
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MC-42S1000LAD32S
32-BIT
TheMC-42S1000LAD32S
/iPD42S18160L
M72S-50A4
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Untitled
Abstract: No abstract text available
Text: fjPD421x160/L, 42S1x160/L x = 6, 7, 8 1,048,576 x 16-Bit Dynamic CMOS RAM ¿ Y fiW NEC Electronics Inc. Description T he devices listed below are fast-page dynam ic RAMs organized as 1M words by 16 bits and designed to o p e ra te from a single power supply. O ptional features
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fjPD421x160/L,
42S1x160/L
16-Bit
4218/42S18,
4217/42S17,
l/09-l/01e
fiPD421X160/L,
83RO-74748
St-37
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upb426c
Abstract: No abstract text available
Text: O 1- ' mPB406/406-1/406-2 mPB426/426-1/426-2 NEC NEC Electronics US.A. Ina 1024 W ORD B Y 4-BIT 4096-BIT BIPOLAR T T L PROM M icrocom puter Division i\à " it D escrip tio n ^ The/U.PB406 and /xPB 426 are high-speed, electrically pro gram m able, fully decoded 4096-bit T T L read-only m em o
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uPB406
uPB406-1
uPB406-2
uPB426
uPB426-1
uPB426-2
4096-BIT
PB406
LM27S2S
upb426c
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8080AF
Abstract: UPD8080A 4218160 UPD8080AF A10C UPD8080AF-1 PD8080AF UPD8080AF-2
Text: /¿PD8080AF mPD8080AF-2 ^fiPD8080AF-1 NEC NEC Electronics U.S.A. Inc. Microcomputer Division /XPD8080AF 8-BIT N-CHANNEL MICROPROCESSOR FAMILY DESCRIPTION T h e / jP D 8 0 8 0 A F is a c o m p le te 8 -b it p aralle l processor fo r use in general purpose d ig ita l c o m p u te r system s. I t is fa b ric a te d on a single LS I c h ip using N -c h a n n e l silicon
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uPD8080AF
uPD8080AF-2
uPD8080AF-1
/XPD8080AF
LM27S2S
001157M
//PD42S18160,
8080AF
UPD8080A
4218160
A10C
PD8080AF
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UPD5101L
Abstract: 5101L PD5101L PD5101 d5101l 5101L-1
Text: MPD5101L SEC N E C E le c tr o n ic s U S A In c . m P D 51 o i h Microcomputer Division 1024 BIT 256x4 ST A T IC C M O S RAM DESCR I P T I O N T h e /UPD5101L and p P D 5 1 0 1 L -1 are v e ry lo w p o w e r 1024 b it (2 56 w o rd s b y 4 bits) sta tic C M OS R an d o m Access M e m ories. T h e y m e et th e lo w p o w e r re q u ire m e n ts o f
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5101L
256x4)
uPD5101L
uPD5101L-1
liPD5101
/UPD5101L-1
LM27S2S
//PD42S18160,
5101L
PD5101L
PD5101
d5101l
5101L-1
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nec 444 ram
Abstract: PD2114L PD444C MPD444C 2SO 765 PD42S18160 uPD444-3 pd2114 MPD444 nec chic
Text: fiPD444 /¿PD444-1 /iPD444-2 /iPD444-3 ^ NEC NEC Electronics U.S.A. Inc. Microcomputer Division 1024 x 4-BIT STATIC CMOS RAM D ESCR IPTIO N The /LfPD444 is a high-speed, low power silicon gate CMOS 4096 bit static RAM orga nized 1024 words by 4 bits. It uses DC stable static circuitry throughout and there
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uPD444
uPD444-1
uPD444-2
uPD444-3
/LfPD444
/jPD444
LM27S2S
//PD42S18160,
nec 444 ram
PD2114L
PD444C
MPD444C
2SO 765
PD42S18160
pd2114
MPD444
nec chic
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mPB8224
Abstract: B8224 4218160 8224d upb8224 ESI 0018 PD42S18160 pb8228 MPB8224C
Text: NEC vvjiPB8224 NEC Electronics USA. Inc. Microcomputer Division CLOCK GENERATOR AND DRIVER FOR 8080A PRO CESSO RS DESCRIPTION The jP B8224 is a single chip clock generator and driver fo r 8080A processors. The clock frequency is determined by a user specified crystal and is capable of
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uPB8224
B8224
/HPB8224
LM27S2S
//PD42S18160,
mPB8224
4218160
8224d
ESI 0018
PD42S18160
pb8228
MPB8224C
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Untitled
Abstract: No abstract text available
Text: blE D bM2752S 0034G34 I TflM « N E C E NEC Electronics Inc. N E C E L E C T R O N I C S INC Description T he devices listed below are fast-page dynam ic RAMs organized as 1M words by 16 bits and designed to o p e ra te from a single pow er supply. O ptional features
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bM2752S
0034G34
42S16160
42S17160
42S18160
4217/42S17,
WD-747W
jjPD421
160/L,
160/L
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LE-60
Abstract: 42S18
Text: jtiPD421x160/L, 42S1x160/L x = 6, 7, 8 1,048,576 x 16-Bit Dynamic CMOS RAM NEC Electronics Inc. Description The devices listed below are fast-page dynamic RAMs organized as 1 M words by 16 bits and designed to operate from a single power supply. Optional features
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uPD421x160/L
uPD42S1x160/L
16-Bit
42S16160
42S17160
42S18160
1601Power
Forthe4217/42S17,
fPD421x160/L,
1x160/L
LE-60
42S18
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