AN1001
Abstract: AN-994 IRF730A
Text: PD-93772A IRF730AS/L SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic
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PD-93772A
IRF730AS/L
AN1001)
12-Mar-07
AN1001
AN-994
IRF730A
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Untitled
Abstract: No abstract text available
Text: PD-93752E IRHNJ57034 JANSR2N7480U3 60V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 REF: MIL-PRF-19500/703 5 Product Summary TECHNOLOGY Part Number Radiation Level IRHNJ57034 100K Rads (Si) RDS(on) 0.030Ω ID QPL Part Number 22A* JANSR2N7480U3
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PD-93752E
IRHNJ57034
IRHNJ53034
IRHNJ54034
JANSR2N7480U3
MIL-PRF-19500/703
JANSF2N7480U3
JANSG2N7480U3
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JANSR2N7480U3/DATAPACK
Abstract: No abstract text available
Text: PD-93752E IRHNJ57034 JANSR2N7480U3 60V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 REF: MIL-PRF-19500/703 5 Product Summary TECHNOLOGY Part Number Radiation Level IRHNJ57034 100K Rads (Si) RDS(on) 0.030Ω ID QPL Part Number 22A* JANSR2N7480U3
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PD-93752E
IRHNJ57034
JANSR2N7480U3
MIL-PRF-19500/703
IRHNJ57034
IRHNJ53034
IRHNJ54034
JANSG2N7480U3
JANSF2N7480U3
JANSR2N7480U3/DATAPACK
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50V Dual N-Channel HEXFET Power MOSFET in a SO-8
Abstract: EIA-541 IRF7530
Text: PD-93760C IRF7530 HEXFET Power MOSFET Trench Technology Ultra Low On-Resistance l Dual N-Channel MOSFET l Very Small SOIC Package l Low Profile <1.1mm l Available in Tape & Reel l l S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS = 20V RDS(on) = 0.030Ω
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PD-93760C
IRF7530
EIA-481
EIA-541.
50V Dual N-Channel HEXFET Power MOSFET in a SO-8
EIA-541
IRF7530
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13A40
Abstract: No abstract text available
Text: PD-93760 IRF7530 HEXFET Power MOSFET ● ● ● ● ● ● Trench Technology Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS = 20V RDS(on) = 0.030Ω
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PD-93760
IRF7530
13A40
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Untitled
Abstract: No abstract text available
Text: PD-93754G IRHNJ57130 JANSR2N7481U3 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 REF: MIL-PRF-19500/703 5 TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ57130 100K Rads (Si) IRHNJ53130 300K Rads (Si) IRHNJ54130 500K Rads (Si)
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PD-93754G
IRHNJ57130
JANSR2N7481U3
MIL-PRF-19500/703
IRHNJ53130
IRHNJ54130
JANSF2N7481U3
JANSG2N7481U3
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5050 ir led
Abstract: IRHM57264SE
Text: PD-93798B RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM57264SE 250V, N-CHANNEL 5 TECHNOLOGY Product Summary Part Number Radiation Level IRHM57264SE 100K Rads (Si) RDS(on) 0.066Ω ID 35A* TO-254 International Rectifier’s R5TM technology provides
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PD-93798B
O-254AA)
IRHM57264SE
IRHM57264SE
O-254
O-254AA.
MIL-PRF-19500
5050 ir led
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IRF7530
Abstract: 2920A 8D12
Text: PD-93760A IRF7530 HEXFET Power MOSFET ● ● ● ● ● ● Trench Technology Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS = 20V RDS(on) = 0.030Ω
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PD-93760A
IRF7530
IRF7530
2920A
8D12
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FR 309 diode
Abstract: No abstract text available
Text: PD-93784G RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM57160 100V, N-CHANNEL 5 TECHNOLOGY Product Summary Part Number Radiation Level IRHM57160 100K Rads (Si) RDS(on) 0.018Ω ID 35A* IRHM53160 300K Rads (Si) 0.018Ω 35A* IRHM54160 600K Rads (Si)
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PD-93784G
O-254AA)
IRHM57160
IRHM53160
IRHM54160
IRHM58160
1000K
O-254AA
O-254AA.
FR 309 diode
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mosfet motor dc 48v
Abstract: IRHNJ53034 IRHNJ54034 IRHNJ57034 JANSF2N7480U3 JANSG2N7480U3 JANSR2N7480U3
Text: PD-93752D IRHNJ57034 JANSR2N7480U3 60V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 REF: MIL-PRF-19500/703 5 Product Summary TECHNOLOGY Part Number Radiation Level IRHNJ57034 100K Rads (Si) RDS(on) 0.030Ω ID QPL Part Number 22A* JANSR2N7480U3
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PD-93752D
IRHNJ57034
JANSR2N7480U3
MIL-PRF-19500/703
IRHNJ57034
IRHNJ53034
IRHNJ54034
JANSG2N7480U3
IRHNJ58034
mosfet motor dc 48v
IRHNJ53034
IRHNJ54034
JANSF2N7480U3
JANSG2N7480U3
JANSR2N7480U3
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PD937
Abstract: No abstract text available
Text: PD-93785B RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-28 IRHQ7110 100V, QUAD N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY Product Summary Part Number Radiation Level IRHQ7110 100K Rads (Si) IRHQ3110 300K Rads (Si) RDS(on) 0.6Ω 0.6Ω ID 3.0A
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PD-93785B
LCC-28)
IRHQ7110
IRHQ3110
IRHQ4110
IRHQ8110
1000K
LCC-28
12volt
PD937
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UM-38
Abstract: No abstract text available
Text: PD-93752F IRHNJ57034 JANSR2N7480U3 60V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 REF: MIL-PRF-19500/703 5 Product Summary Part Number Radiation Level IRHNJ57034 100K Rads (Si) IRHNJ53034 300K Rads (Si) RDS(on) 0.030Ω 0.030Ω ID
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PD-93752F
IRHNJ57034
IRHNJ53034
IRHNJ54034
IRHNJ58034
1000K
JANSR2N7480U3
MIL-PRF-19500/703
UM-38
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Untitled
Abstract: No abstract text available
Text: PD-93784G RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM57160 100V, N-CHANNEL 5 TECHNOLOGY Product Summary Part Number Radiation Level IRHM57160 100K Rads (Si) RDS(on) 0.018Ω ID 35A* IRHM53160 300K Rads (Si) 0.018Ω 35A* IRHM54160 600K Rads (Si)
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PD-93784G
O-254AA)
IRHM57160
IRHM53160
IRHM54160
IRHM58160
1000K
O-254AA.
MIL-PRF-19500
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Untitled
Abstract: No abstract text available
Text: PD-93785B RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-28 IRHQ7110 100V, QUAD N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY Product Summary Part Number Radiation Level IRHQ7110 100K Rads (Si) IRHQ3110 300K Rads (Si) RDS(on) 0.6Ω 0.6Ω ID 3.0A
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PD-93785B
LCC-28)
IRHQ7110
IRHQ3110
IRHQ4110
IRHQ8110
1000K
LCC-28
12volt
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IRF7530
Abstract: IRF7501 6E-18
Text: PD-93760B IRF7530 HEXFET Power MOSFET ● ● ● ● ● ● Trench Technology Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS = 20V RDS(on) = 0.030Ω
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PD-93760B
IRF7530
IRF7530
IRF7501
6E-18
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MOTOR DRIVER 48v 12A
Abstract: No abstract text available
Text: PD-93791D IRHF57034 JANSR2N7492T2 60V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 REF: MIL-PRF-19500/701 5 Product Summary Part Number IRHF57034 IRHF53034 Radiation Level RDS(on) 100K Rads (Si) 0.048Ω 300K Rads (Si) 0.048Ω ID QPL Part Number
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PD-93791D
IRHF57034
IRHF53034
IRHF54034
JANSR2N7492T2
MIL-PRF-19500/701
JANSF2N7492T2
JANSG2N7492T2
MOTOR DRIVER 48v 12A
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IRHNJ53034
Abstract: IRHNJ54034 IRHNJ57034 IRHNJ58034 JANSR2N7480U3
Text: PD-93752C IRHNJ57034 JANSR2N7480U3 60V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 REF: MIL-PRF-19500/703 5 Product Summary TECHNOLOGY Part Number Radiation Level IRHNJ57034 100K Rads (Si) IRHNJ53034 300K Rads (Si) RDS(on) 0.030Ω
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PD-93752C
IRHNJ57034
JANSR2N7480U3
MIL-PRF-19500/703
IRHNJ57034
IRHNJ53034
JANSF2N7480U3
IRHNJ54034
JANSG2N7480U3
IRHNJ54034
IRHNJ58034
JANSR2N7480U3
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EIA-541
Abstract: IRF7530 mosfet 500V 50A
Text: PD-93760C IRF7530 HEXFET Power MOSFET Trench Technology Ultra Low On-Resistance l Dual N-Channel MOSFET l Very Small SOIC Package l Low Profile <1.1mm l Available in Tape & Reel l l S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS = 20V RDS(on) = 0.030Ω
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PD-93760C
IRF7530
EIA-481
EIA-541.
EIA-541
IRF7530
mosfet 500V 50A
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Untitled
Abstract: No abstract text available
Text: PD-93772A IRF730AS/L SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic
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PD-93772A
IRF730AS/L
AN1001)
08-Mar-07
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JANSR2N7481U3
Abstract: No abstract text available
Text: PD-93754G IRHNJ57130 JANSR2N7481U3 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 REF: MIL-PRF-19500/703 5 TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ57130 100K Rads (Si) IRHNJ53130 300K Rads (Si) IRHNJ54130 500K Rads (Si)
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PD-93754G
IRHNJ57130
IRHNJ53130
IRHNJ54130
IRHNJ58130
1000K
JANSR2N7481U3
MIL-PRF-19500/703
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Untitled
Abstract: No abstract text available
Text: PD-93794D RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-28 IRHQ9110 100V, QUAD P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY Product Summary Part Number Radiation Level IRHQ9110 100K Rads (Si) IRHQ93110 300K Rads (Si) RDS(on) 1.1Ω 1.1Ω ID -2.3A
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PD-93794D
LCC-28)
IRHQ9110
IRHQ93110
LCC-28
-244A/Â
-100V,
-12volt
MIL-STD-750,
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Untitled
Abstract: No abstract text available
Text: PD-93789F IRHF57130 JANSR2N7493T2 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 REF: MIL-PRF-19500/701 5 Product Summary TECHNOLOGY Part Number IRHF57130 IRHF53130 IRHF54130 Radiation Level 100K Rads (Si) 300K Rads (Si) 500K Rads (Si)
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PD-93789F
IRHF57130
JANSR2N7493T2
MIL-PRF-19500/701
IRHF53130
IRHF54130
JANSF2N7493T2
JANSG2N7493T2
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Untitled
Abstract: No abstract text available
Text: PD-93792E IRHM57064 60V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA 5 TECHNOLOGY Product Summary Part Number Radiation Level IRHM57064 100K Rads (Si) IRHM53064 300K Rads (Si) RDS(on) 0.012Ω 0.012Ω ID 35A* 35A* IRHM54064 600K Rads (Si)
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PD-93792E
IRHM57064
O-254AA)
IRHM53064
IRHM54064
IRHM58064
1000K
O-254AA.
MIL-PRF-19500
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OA 207 B diode
Abstract: EIA-541 IRF7501 IRF7530
Text: PD-93760 International IOR Rectifier IRF7530 HEXFET Power MOSFET • • • • • • Trench Technology Ultra Low O n-R esistance Dual N-Channel M O SFET Very Small SO IC Package Low Profile <1.1 mm A vailable in Tape & Reel Vdss = 20V RüS(on) = 0.030Î2
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