Untitled
Abstract: No abstract text available
Text: MOSFET 140A 500V 1 PDM1405HA
|
Original
|
PDF
|
PDM1405HA
|
Untitled
Abstract: No abstract text available
Text: MOSFET MODULE PDM1405HA Dual 140A /500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible
|
Original
|
PDF
|
/500V
PDM1405HA
300KHz
|
PDM1405HA
Abstract: No abstract text available
Text: MOSFET 140A 500V PDM1405HA PDM1405HA 質量 Approximate Weight :460g •最大定格 Maximum Ratings 項 目 Rating ドレイン・ソース間電圧 VDSS Drain-Source Voltage ゲート・ソース間電圧 Gate-Source Voltage ドレイン電流（連続）
|
Original
|
PDF
|
PDM1405HA
142/W
PDM1405HA
|
PDM1405HA
Abstract: No abstract text available
Text: MOSFET MODULE PDM1405HA Dual 140A /500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible
|
Original
|
PDF
|
PDM1405HA
/500V
300KHz
142i/W
PDM1405HA
|
PDM1405H
Abstract: No abstract text available
Text: MOSFET 140A 500 V PDM1405HA •回路図 CIRCUIT ■外形寸法図 OUTLINE DRAWING PD PDM1405HA （単位 Dimension：mm） Rg MOS SBD 1 D2S1 G2 S2 FRD 2 (S2) 3 SBD (D1) MOS FRD S1 G1 Rg 質量 Approximate Weight：460g ■最大定格 Maximum Rating
|
Original
|
PDF
|
PDM1405HA
Weight460g
Duty50
PDM1405HA
140TC25
100TC25
280TC25
880TC25
06kgf
PDM1405H
|
PT76S16
Abstract: d2n203le 10ERB20 508RP FCHS20A 300MCB
Text: Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
|
Original
|
PDF
|
|
508RP
Abstract: 10ERB20 d2n202le D2W220CD FCH10U15 FCU20A40
Text: NO. 42 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
|
Original
|
PDF
|
|
PDM5001
Abstract: PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16
Text: Contents Page Rectifier Diode PH PC PD PE PF PB PT C2 C3 C4,C5 C5 C6 C6 C7,C8 Fast Recovery Diode PH-F, PC-F, PD-F P2H-F C9 C10 Schottky Barrier Diode PC-Q, PE-Q, PQ-Q P2H-Q C11 C12 Thyristor plus Diode PHT PDT PAT PFT PAH PCH PDH PKH PBH, PBH-A, PBF PGH
|
Original
|
PDF
|
C3557
PH1503
PH150
PDM5001
PDT400N16
pah60n8cm
PHMB50E6CL
PHT250N16
PHT400N16
PD100KN16
PAH100N8CM
PT76S16
PAT400N16
|
FCGS20A12
Abstract: FCHS10A12 EC10QS04 TE12L d2n203le 10ERA60 FCHS20A 20NFB60 FCU20A40 PAH100N8CM 10eda10
Text: NO. 43 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
|
Original
|
PDF
|
|