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    MWA5121

    Abstract: No abstract text available
    Text: WIDEBAND . . . Three stage amplifier cations up to 900 MHz. HYBRID AMPLIFIER designed for broadband linear appli- e Gain 27 dB Typ e Complete o Thin Gain e Low Noise e LOW Block; Requires No External Components Film Construction Figure 4.0 dB Typ Intermodulation


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    Abstract: No abstract text available
    Text: International IG R Rectifier PD - 9.1343A IRFP140N PRELIMINARY HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss = "100 V RüS on = 0.052Î2 lD = 33A


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    IRFP140N O-247 PDF

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    Abstract: No abstract text available
    Text: PD-2.359A International n Rectifier 12CGQ150 SCHOTTKY RECTIFIER 35 Amp Major Ratings and Characteristics Characteristics Description/Features 12CGQ150 Units •F AV Rectangular waveform 35 A VRRM 150 V 300 A •FSM *P = 83ms sine Vp @ 15 Apk, T j = 125°C


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    12CGQ150 12CGQ150 O-254AA MIL-S-19500 MIL-S-19500 PERANSIY14 12CGQ150D 12CGQ150U O-254 PDF

    design a sequential timer to switch on and off at least 3 relays in a particular sequence using tim

    Abstract: IS09141 Nippon capacitors
    Text: Order this document by MC68HC05PV8/D MC68HC05PV8 MC68HC805PV8 HCMOS Microcontroller Unit TECHNICAL DATA M MOTOROLA I IH tfU IU U (M l M U IB H M |i* |a a U | | u u *mot<BISSR T e c h n ic a l Data Motorola reserves the right to make changes without further notice to


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    MC68HC05PV8/D MC68HC05PV8 MC68HC805PV8 1ATX45608-0 design a sequential timer to switch on and off at least 3 relays in a particular sequence using tim IS09141 Nippon capacitors PDF

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    Abstract: No abstract text available
    Text: P D - 9 .1 4 9 0 B International IQ R Rectifier IRFP3710 PRELIMINARY HEXFET Power MOSFET • • • • • A dvanced Process Technology Dynam ic dv/dt Rating 1 7 5 °C O perating Tem perature Fast Switching Fully Avalanche Rated V d s s = "10 0 V RüS on = 0.025Î2


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    IRFP3710 O-247 PDF