Untitled
Abstract: No abstract text available
Text: subject to change without notice September 15, 2003 3260 Data Sheet 27631.50 ADVANCE INFORMATION 2-WIRE, CHOPPER-STABILIZED, PRECISION HALL-EFFECT BIPOLAR SWITCH Suffix Code 'LH' Pinning (SOT23W) 3 X NC NO (INTERNAL) CONNECTION Dwg. PH-003-5 2 GROUND SUPPLY
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OT23W)
A3260--
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GH-007-4
Abstract: 3362 resistor
Text: subject to change without notice September 15, 2003 3361 AND 3362 Data Sheet 27621.50* PRELIMINARY INFORMATION 2-WIRE, CHOPPER-STABILIZED, HALL-EFFECT SWITCHES Suffix Code 'LH' Pinning (SOT23W) 3 X NC NO (INTERNAL) CONNECTION Dwg. PH-003-5 2 GROUND SUPPLY
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OT23W)
A3361x
A3362x
MH-026
GH-007-4
3362 resistor
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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BFQ67F
Abstract: BFR181TF BFR182TF BFR183TF BFR193TF BFR92AF BFR93AF S852TF SC89 SC-89
Text: RF Transistors in SOT490 SC89 Package w w w. v i s h a y. c o m PRODUCT OVERVIEW THE SMALLER THE BETTER THE SMALLER THE BETTER RF Transistors in SOT490 (SC89) Package With the new SOT490 (SC-89), Vishay Semiconductors offers a space-saving 3-pin surface-mount package that takes electrical performance and reliability
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OT490
SC-89)
OT490
OT323,
OT323
VHN-PO1311-0405
BFQ67F
BFR181TF
BFR182TF
BFR183TF
BFR193TF
BFR92AF
BFR93AF
S852TF
SC89
SC-89
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marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
A1t SOT23
3Ft SOT23
PH C5V1
transistor t04 sot23
A4T SOT23
transistor marking codes A4p
sot23 marking A1T
A6t SOT23
marking z2p
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PDF
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single phase half bridge inverter
Abstract: IGBT gate drive board fire sensor LM35 single phase IGBT based PWM inverters LEM sensor CURRENT single phase igbt based inverter 200 amps circuit board 5045-04A single phase igbt based inverter 200 amps circuit lem HA Lm35 with application note
Text: APPLIED POWER SYSTEMS, INC. BAP1551 Gate Drive Board BAP1551 Gate Drive Board Application Note and Datasheet for Half Bridge Inverters Patent Pending Introduction The BAP1551 Insulated Gate Bipolar Transistor IGBT Gate Drive Board (GDB) discussed in this Datasheet/Applications Note provides a safe, reliable, isolated interface between control
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BAP1551
LM-35
single phase half bridge inverter
IGBT gate drive board
fire sensor LM35
single phase IGBT based PWM inverters
LEM sensor CURRENT
single phase igbt based inverter 200 amps circuit board
5045-04A
single phase igbt based inverter 200 amps circuit
lem HA
Lm35 with application note
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PDF
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80mAF
Abstract: 6069 marking
Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability
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BFP650
VPS05605
OT343
Aug-16-2004
80mAF
6069 marking
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BFP620
Abstract: BFP620 acs BFP620 applications note GFT45
Text: BFP620 NPN Silicon Germanium RF Transistor 3 4 High gain low noise RF transistor Provides outstanding performance for a wide range of wireless applications 2 Ideal for CDMA and WLAN applications Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 VPS05605
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BFP620
VPS05605
OT343
Apr-07-2003
BFP620
BFP620 acs
BFP620 applications note
GFT45
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Untitled
Abstract: No abstract text available
Text: BFP620 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz
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BFP620
VPS05605
OT343
Aug-11-2004
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PDF
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712 transistor smd sot23
Abstract: 33m ph diode smd transistor 718 diode PH 33m
Text: Value Code Inductor ph Code .01 .012 .015 .018 000 Oil 001 009 ph Code pFID. .10 .12 .15 .18 010 012 015 018 _ _ . _ .022 002 .22 022 _ _ - _ .027 007 .27 027 - _ .033 003 .33 033 _ - - - .039 009 .39 039 . _ _ - _ .047 004 .47 047 _ _ - _ .056 005 .56 056
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SX3512
SX5020
712 transistor smd sot23
33m ph diode
smd transistor 718
diode PH 33m
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PDF
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Untitled
Abstract: No abstract text available
Text: Aß Avionics Pulsed Power Transistor PH 1090-15S Preliminary 15 Watts, 1030-1090 MHz, 10 jis Pulse, 1% Duty Features • • • • • • • • • Outline Drawing Designed for Short Pulse IFF Applications NPN Silicon Microwave Power Transistor Common Base Configuration
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OCR Scan
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1090-15S
5b422D5
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PDF
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K 3115
Abstract: transistor marking code 325 bf550R transistor jt BF550 PHILIPS 1980 MARKING SA transistor transistor marking SA
Text: I N AMER PH IL bbS3T31 001S7QÔ =1 IP S/»IS CRETE_ O b E ^ BF550 3 ¡ - 15- r - SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor, in a microminiature plastic envelope, intended for applications in thick and thin-film circuits. This transistor Is primarily intended for use in i.f. detection applications.
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OCR Scan
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001S7QÃ
BF550
bbS3T31
0Q15710
BF550
T-31-15
K 3115
transistor marking code 325
bf550R
transistor jt
PHILIPS 1980
MARKING SA transistor
transistor marking SA
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PDF
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C2631 transistor
Abstract: IC vco 900 1800 mhz 12pf varactor c2631 SA900 transistor c2631 IS-54 KV1470 SA7025 SA900BE
Text: RF COMMUNICATIONS PRODUCTS U M P k S l n l E E SA900 l/Q transmit modulator Product specification December 15, 1994 IC17 Data Handbook Philips Semiconductors PHILIPS PH ILIPS 9 711002b Q0AM5Ô0 551 This Material Copyrighted By Its Respective Manufacturer Philips Semiconductors RF Communications Products
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OCR Scan
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SA900
711002b
SA900
C2631 transistor
IC vco 900 1800 mhz
12pf varactor
c2631
transistor c2631
IS-54
KV1470
SA7025
SA900BE
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PDF
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BUK455-600B
Abstract: BUK455-600A BUK455 T0220AB
Text: N AMER PH I L I P S / D I S C R E T E 2 5 E ^53=131 D 0 0 S D 5 15 1 PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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OCR Scan
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00SD515
BUK455-600A
BUK455-600B
T-21-13
BUK455
-600A
-600B
BUK455-600B
BUK455-600A
T0220AB
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PDF
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55 volt switching power supply circuit
Abstract: Fairchild 2N709 2N709 max 550 transistor All similar transistor fairchild micrologic transistor CC 11 A transistor 60 volt fairchild transistor FD200
Text: • n>L N O V EM BER 1964 103, n>L 104 — FAIRCHILD PH YSICAL DIMENSIONS wide tem perature range. Typical propagation delay at 600 pf load capacitance and a fan-out of 15 is less than 50 nsecfrom -55°C to +125°C, and is le ss than 20 nsec at a load capacitance of 50 pf and a fan-out of 7 at any tem perature.
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OCR Scan
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W10TH
180ft
FD-200
2N709
55 volt switching power supply circuit
Fairchild 2N709
max 550 transistor
All similar transistor
fairchild micrologic
transistor CC 11 A
transistor 60 volt
fairchild transistor
FD200
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PDF
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KRC107S
Abstract: KRC108S KRC109S
Text: KRC107SKRC109S SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.
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OCR Scan
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KRC107S-SEMICONDUCTOR
KRC109S
KRC107S
KRC108S
KRC109S
OT-23
KRC107S
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PDF
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KRA107S
Abstract: KRA108S KRA109S
Text: KRA107SSEMICONDUCTOR KRA109S EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • With Built-in Bias Resistors • Simplify Circuit Design • Reduce a Quantity of Parts and Manufacturing Process
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OCR Scan
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KRA107S-KRA109S
KRA107S
KRA108S
KRA109S
OT-23
KRA107S
KRA109S
KRA108S
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PDF
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kra102s equivalent
Abstract: KRA104S kra102s KRA101S-KRA106S 106S KRA101S KRA103S KRA105S KRA106S transistor mark PH
Text: K R A IO ISKRA106S SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.
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OCR Scan
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KRA101S-
KRA106S
KRA101S
KRA102S
KRA103S
KRA104S
KRA105S
KRA106S
KRA105S
kra102s equivalent
KRA101S-KRA106S
106S
transistor mark PH
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PDF
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ph-13 transistor
Abstract: KTA1664 KTC4376
Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTA1664 EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURES • 1W Mounted on Ceramic Substrate . • Small Flat Package. • Complementary to KTC4376. MAXIMUM RATINGS (Ta=25 °C) MILLIMETERS
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OCR Scan
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KTA1664
KTC4376.
250mm2
ph-13 transistor
KTA1664
KTC4376
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PDF
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KTC4520
Abstract: TT-B-2
Text: KEC SEMICONDUCTOR KTC4520 TECHNICAL D A TA KOREA ELECTRONICS CO.,LTD. TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. FEATURES • Excellent Switching Times. : ton=0.5juS Max. , tf=0.3j/S(M ax.), a t Ic=2A.
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OCR Scan
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KTC4520
220AB
ELECTR05
KTC4520
TT-B-2
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PDF
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CI L200
Abstract: KTC4521
Text: SEMICONDUCTOR KTC4521 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. FEATURES • Excellent Switching Times. : ton=0.5iiS Max. , tf=0.3/iS(Max.), at IC=4A. • High Collector Voltage : V c e o = 5 0 0 V .
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OCR Scan
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KTC4521
200/iH
CI L200
KTC4521
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PDF
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marking ph SOT-89
Abstract: C4372 KTA1660 KTC4372 kec marking SOT
Text: SEMICONDUCTOR TECHNICAL D A TA KTC4372 TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE SWITCHING APPLICATION. FEATURES • • • • • High Voltage : V ceo = 1 5 0 V . High Transition Frequency : fT=120MHz. 1W Mounted on Ceramic Substrate . Small Flat Package.
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OCR Scan
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KTC4372
120MHz.
KTA1660.
250mm2x
Ta-25
marking ph SOT-89
C4372
KTA1660
KTC4372
kec marking SOT
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PDF
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F40 marking
Abstract: KTC3882
Text: KTC3882 SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. TV TUNER, VHF OSCILLATOR APPLICATION. A MILLIMETERS 2.93+0.20 B 1.30+0.20/—0.15 C D 1.30 MAX 0.45+0.15/—0.05 E 2.40+0.3 0 /- 0 .20 DIM MAXIMUM RATINGS Ta=25°C
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OCR Scan
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KTC3882
OT-23
50MHzV
F40 marking
KTC3882
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PDF
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