Untitled
Abstract: No abstract text available
Text: PH1617-2 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)65â V(BR)CBO (V)65 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)13# Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0mx @V(CBO) (V) (Test Condition)25
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PH1617-2
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c 1685 transistor
Abstract: 1685 transistor transistor c 1685 1615mhz PH1617-60
Text: Wireless Power Transistor, 60 Watts, 1615 - 1685 MHz PH1617-60 PH1617-60 Wireless Power Transistor 60 Watts, 1615 - 1685 MHz 1 Features • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Emitter Configuration Diffused Emitter Ballasting Resistors
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PH1617-60
PH1617-60
1615MHz
1685MHz
c 1685 transistor
1685 transistor
transistor c 1685
1615mhz
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transistor 9163
Abstract: lN914B lN914 PH1617-2 BIPOLAR M 846 m 32 ab transistor transistor 1555
Text: Wireless Bipolar Power Transistor, 1.6 - 1.7 GHz 2W PH1617-2 v2.00 Features l l l l l l Designed for Linear Amplifier Applications Class AB: -33 dBc Typ 3rd IMD at 2 Watts PEP Class A: +44 dBm Typ 3rd Order Intercept Point Common Emitter Configuration Internal Input Impedance Matching
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PH1617-2
-55to
transistor 9163
lN914B
lN914
PH1617-2
BIPOLAR M 846
m 32 ab transistor
transistor 1555
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Untitled
Abstract: No abstract text available
Text: PH1617-60 Wireless Power Transistor 60W, 1615-1685 MHz M/A-COM Products Released, 05 Sep 07 Package Outline Features • • • • • • • NPN Silicon microwave power transistor Common emitter configuration Diffused emitter ballasting resistors Gold metallization system
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PH1617-60
-28dBc
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PH1617-30
Abstract: No abstract text available
Text: PH1617-30 Wireless Bipolar Power Transistor 30W, 16 -1.7 GHz M/A-COM Products Released - Rev. 07.07 Outline Drawing Features • • • • • Designed for linear amplifier applications -30 dBc typ. 3rd IMD at 30 W PEP Common emitter Class AB operation Internal input impedance matching
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PH1617-30
10rope
PH1617-30
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transistor Common emitter configuration
Abstract: PH1617-60
Text: PH1617-60 Wireless Power Transistor 60W, 1615-1685 MHz M/A-COM Products Released, 05 Sep 07 Package Outline Features • • • • • • • NPN Silicon microwave power transistor Common emitter configuration Diffused emitter ballasting resistors Gold metallization system
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PH1617-60
-28dBc
transistor Common emitter configuration
PH1617-60
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PH1617-2
Abstract: No abstract text available
Text: PH1617-2 Wireless Bipolar Power Transistor 2W, 16 -1.7 GHz M/A-COM Products Released - Rev. 07.07 Outline Drawing Features • • • • • • Designed for linear amplifier applications Class AB: -33 dBc typ. 3rd IMD at 2 W PEP Class A: +44 dBm typ. 3rd order intercept point
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PH1617-2
PH1617-2
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smr-3822
Abstract: x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter
Text: final covers_2008.qxd 5/8/08 3:20 PM Page 1 We work with you The M/A-COM brand of radio frequency RF and microwave components is one of the broadest lines of reliable components for the wireless telecom, automotive, aerospace and military industries. From semiconductors to components, to subsystems and small systems, there are many new M/A-COM
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Jun08
smr-3822
x-band power transistor 50W
SMR-5550
x-band mmic lna
HF multicoupler
GAAS FET AMPLIFIER x-band 10w
x-band microwave fet
SM4T mixer
PALLET FM AMPLIFIER 300 WATTS
x-band limiter
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TRANSISTOR BV 32
Abstract: Bv 42 transistor PH1617-30 K010 G177
Text: an AMP ZE comDanv r = Wireless Bipolar Power Transistor, 1.6 - 1.7 GHz 30W PHI 617-30 Features l l l l l Designed for Linear Amplifier Applications -30 dBc Typ 3rd IMD at 30 Watts PEP Common Emitter Class AB Operation Internal Input Impedance Matching Diffused Emitter Ballasting
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PH1819-60
Abstract: SMR-5550 SMR-5550i smr-3822 HF multicoupler transistor MY51 GPS Antenna AT65 TU-3840 Wideband ELINT Tuner agastat 2400 x-band power transistor 50W
Text: We work with you RF & Microwave Product Solutions June 2006 M/A-COM, Inc., a business unit of Tyco Electronics, is an established industry leader in the design, development, and manufacture of radio frequency RF , microwave and millimeter wave semiconductors, components and technologies
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transistor 5cw
Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
Text: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000
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CDMA2000
2N6084
BLV102
CA5815CS
D1020UK
LF2810A
MRF175LV
MSC75652
PH1600-7
SD1466
transistor 5cw
transistor 5cw 61
sd1466
transistor 6cw
TRANSISTOR REPLACEMENT GUIDE
6CW transistor
MS3016
transistor selection guide
PH1516-2
STM1645-10
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MAAM-008863
Abstract: MAMU-009156 transistor MY52 200W MOSFET POWER AMP transistor MY51 GPS Antenna AT65 MA4ST350 MADR-007690-DR0002 a74 sot-89 SM4T mixer
Text: Corporate Headquarters Richardson Electronics 40W267 Keslinger Road P.O. Box 393 LaFox, IL USA 60147-0393 Phone: 1 800 737-6937 630-208-3637 Fax: (630) 208-2550 Internet: www.rell.com Email: Canada Brampton, Ontario Torod, Norway 1 (800) 737-6937 Latin America
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40W267
MAAM-008863
MAMU-009156
transistor MY52
200W MOSFET POWER AMP
transistor MY51
GPS Antenna AT65
MA4ST350
MADR-007690-DR0002
a74 sot-89
SM4T mixer
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22iJ
Abstract: F16 DIODE b 595 transistor
Text: Atiwm m an A M P com pany Wireless Bipolar Power Transistor, 30W 1.6-1 .7 GHz PH1617-30 Features • • • • • D e sig n e d fo r l.in ea r A m plifier A p p licatio n s -30 cl Be T y p 3 rd I M I at 3 0 W atts I’ KP C o m m o n K m itter C la ss AB O p e r a tio n
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PH1617-30
22iJ
F16 DIODE
b 595 transistor
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TFK 082
Abstract: J1 TRANSISTOR
Text: ß tfk c m 1 m a n A M P com pany Wireless Bipolar Power Transistor, 12W PH1617-12N 1.6-1.7 GHz y/b Features £4 /7 '25 • • • • • • • ( 18 . 4 2 ) NPN Silicon M icrow ave P ow er T ran sisto r D esigned fo r L inear A m plifier A pplications
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PH1617-12N
TT50M
TFK 082
J1 TRANSISTOR
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1445s
Abstract: transistor D 1761 PH1617
Text: ^fccO'H m an A M P com pany Wireless Bipolar Power Transistor, 10W 1.6- 1.7 GHz _ .744 _ 18.90 Features • • • • • • PH1617-10 Designed for Linear Amplifier Applications Class AB: -33 dBc Typ 3rd IMD at 10 Watts PKP Class A. +49 dBm Typ 3rd Order Intercept Point
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PH1617-10
1445s
transistor D 1761
PH1617
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UU15
Abstract: tic 260 PH1617-60 "Power TRANSISTOR"
Text: PH1617-60 M/A-OOM Wireless Power Transistor 60 Watts, 1615- 1685 MHz = & Microwave Products Outline Drawing1 Description M/A-COM’s PH1617-60 is a silicon bipolar NPN transistor intended for use as a common emitter class AB stage in power amplifiers that operate in the 1615 to 1685 MHz range. This
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PH1617-60
PH1617-60
TT50M5QA
11Bt-
1685MHz
1615MHz
1685MHz
UU15
tic 260
"Power TRANSISTOR"
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93C24
Abstract: No abstract text available
Text: an A M P com pany Wireless Bipolar Power Transistor, 4W 1.6 -1.7 GHz Features • • • • • • • • Symbol Rating '♦ 60 V VCES 60 V Emitter-Base Voltage V EBO 3.0 V 'c 0.7 A 19.5 W ir ' ! d LH] T 1LR ii LMi r - L H lU •HJ' 'f K l BA S i G/B
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PH1617-4N
93C24
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