PHEMT TRANSISTOR LP6836 Search Results

PHEMT TRANSISTOR LP6836 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

PHEMT TRANSISTOR LP6836 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
LP6836P70-3 Abstract: LP6836P70-1 LP6836-P70-1 LP6836P70 MIL-HDBK-263 pHEMT transistor 360 Text: LP6836P70 PACKAGED MEDIUM POWER PHEMT • FEATURES ♦ 23 dBm Output Power at 1-dB Compression at 15 GHz ♦ 11.5 dB Power Gain at 15 GHz ♦ 50% Power-Added Efficiency • DESCRIPTION AND APPLICATIONS The LP6836P70 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility	Original	LP6836P70 LP6836P70 MIL-STD-1686 MIL-HDBK-263. LP6836P70-3 LP6836P70-1 LP6836-P70-1 MIL-HDBK-263 pHEMT transistor 360	PDF
pHEMT transistor 360 Abstract: LP6836 MIL-HDBK-263 Text: Filtronic LP6836 Medium Power PHEMT Solid State DRAIN BOND PAD FEATURES • • • • +25 dBm Typical Power at 18 GHz 9.5 dB Typical Power Gain at 18 GHz Low Intermodulation Distortion 55% Power-Added-Efficiency at 18 GHz SOURCE BOND PAD x2 GATE BOND PAD	Original	LP6836 LP6836 DSS-029 pHEMT transistor 360 MIL-HDBK-263	PDF
Untitled Abstract: No abstract text available Text: LP6836SOT343 PACKAGED MEDIUM POWER PHEMT • FEATURES ♦ 0.5 dB Noise Figure at 2 GHz ♦ 19 dBm P-1dB 2 GHz, 19 dBm at 6 GHz ♦ 20 dB Power Gain at 2 GHz, 10 dB at 6 GHz ♦ 70% Power-Added-Efficiency • DESCRIPTION AND APPLICATIONS The LP6836SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility	Original	LP6836SOT343 LP6836SOT343 LP6836 OT343 SC-70) MIL-STD-1686 MIL-HDBK-263.	PDF
LP6836 Abstract: LP6836P70 LP6836SOT343 MIL-HDBK-263 RF TRANSISTOR 2GHZ Text: PRELIMINARY DATA SHEET LP6836SOT343 PACKAGED MEDIUM POWER PHEMT • FEATURES ♦ 0.5 dB Noise Figure at 2 GHz ♦ 19 dBm P-1dB 2 GHz, 19 dBm at 6 GHz ♦ 19 dB Power Gain at 2 GHz, 8 dB at 6 GHz ♦ 70% Power-Added-Efficiency • DESCRIPTION AND APPLICATIONS	Original	LP6836SOT343 LP6836P70 LP6836 OT343 SC-70) MIL-STD-1686 MIL-HDBK-263. LP6836SOT343 MIL-HDBK-263 RF TRANSISTOR 2GHZ	PDF
LP6836 Abstract: LP6836SOT343 MIL-HDBK-263 RF TRANSISTOR 2GHZ pHEMT transistor 360 Text: PRELIMINARY DATA SHEET LP6836SOT343 PACKAGED MEDIUM POWER PHEMT • FEATURES ♦ 0.5 dB Noise Figure at 2 GHz ♦ 19 dBm P-1dB 2 GHz, 19 dBm at 6 GHz ♦ 20 dB Power Gain at 2 GHz, 10 dB at 6 GHz ♦ 70% Power-Added-Efficiency • DESCRIPTION AND APPLICATIONS	Original	LP6836SOT343 LP6836SOT343 LP6836 OT343 SC-70) MIL-STD-1686 MIL-HDBK-263. MIL-HDBK-263 RF TRANSISTOR 2GHZ pHEMT transistor 360	PDF
pHEMT transistor LP6836 Abstract: LP6836 LP6836P100 filtronic Solid State Text: Filtronic LP6836P100 Packaged 0.25W Power PHEMT Solid State FEATURES • • • • • GATE +24.5 dBm Typical Power at 15 GHz 12 dB Typical Power Gain at 15 GHz Low Intermodulation Distortion 55% Power-Added-Efficiency Color-coded by IDSS range SOURCE DRAIN	Original	LP6836P100 LP6836P100 LP6836orage, MIL-STD-1686 MILHDBK-263. DSS-031 pHEMT transistor LP6836 LP6836 filtronic Solid State	PDF
MIL-STD-1686 Abstract: LP6836 MIL-HDBK-263 pHEMT transistor LP6836 high power transistor s-parameters Text: LP6836 MEDIUM POWER PHEMT • DRAIN BOND PAD FEATURES ♦ 25 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency SOURCE BOND PAD 2x GATE BOND PAD • DIE SIZE: 14.2X13.0 mils (360x330 µm) DIE THICKNESS: 3.9 mils (100 µm)	Original	LP6836 360x330 50x50 LP6836 MIL-STD-1686 MIL-HDBK-263 pHEMT transistor LP6836 high power transistor s-parameters	PDF
LP6836-P70-1 Abstract: LP6836P70-1 pHEMT transistor LP6836 filtronic Solid State LP6836P70 LP6836 LP6836P70 LP6836-P70-2 LP6836-P70-3 LP6836P70-3 Text: Filtronic LP6836P70 PACKAGED MEDIUM POWER PHEMT Solid State FEATURES • • • • • SOURCE +23.0 dBm Typical Power at 15 GHz 11.5 dB Typical Power Gain at 15 GHz Low Intermodulation Distortion 50% Power-Added-Efficiency Color-coded by IDSS range DRAIN	Original	LP6836P70 LP6836P70 MIL-STD-1686 MILHDBK-263. P70-52 DSS-030 LP6836-P70-1 LP6836P70-1 pHEMT transistor LP6836 filtronic Solid State LP6836P70 LP6836 LP6836-P70-2 LP6836-P70-3 LP6836P70-3	PDF