CDQ0303-QS
Abstract: CDQ0303-QS-0G00 CDQ0303-QS-0G0T MCH185A101JK PB-CDQ0303-QS-00A0 PB-CDQ0303-QS-00B0
Text: 500-6000 MHz Dual, Ultra Low Noise, High IP3 Amplifier CDQ0303-QS October 2007 - Rev 22-Oct-07 Features Matched Pair of Transistors for Optimum Balanced Amplifier Design AlGaAs/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistor pHEMT High Gain:
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CDQ0303-QS
22-Oct-07
CDQ0303-QS
CDQ0303-QS-0G00
CDQ0303-QS-0G0T
MCH185A101JK
PB-CDQ0303-QS-00A0
PB-CDQ0303-QS-00B0
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celeritek LNA
Abstract: microwave transducer Tower Mounted Amplifiers Dual Band CDQ0303-QS-0G0T MCH185A101JK PB-CDQ0303-QS-00A0 PB-CDQ0303-QS-00B0 CDQ0303-QS CDQ0303-QS-0G00 Coil Craft 104
Text: 500-6000 MHz Dual, Ultra Low Noise, High IP3 Amplifier CDQ0303-QS May 2006 - Rev 24-May-06 Features Matched Pair of Transistors for Optimum Balanced Amplifier Design AlGaAs/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistor pHEMT High Gain: 25 dB @ 900 MHz
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CDQ0303-QS
24-May-06
CDQ0303-QS
celeritek LNA
microwave transducer
Tower Mounted Amplifiers Dual Band
CDQ0303-QS-0G0T
MCH185A101JK
PB-CDQ0303-QS-00A0
PB-CDQ0303-QS-00B0
CDQ0303-QS-0G00
Coil Craft 104
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Untitled
Abstract: No abstract text available
Text: 500-6000 MHz Dual, Ultra Low Noise, High IP3 Amplifier CDQ0303-QS May 2006 - Rev 24-May-06 Features Matched Pair of Transistors for Optimum Balanced Amplifier Design AlGaAs/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistor pHEMT High Gain: 25 dB @ 900 MHz
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CDQ0303-QS
24-May-06
CDQ0303-QS
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4202 BD TRANSISTOR
Abstract: lg 8993 f 4556 TRANSISTOR BD 137-10 C 5478 transistor 329 9148 f 9582 dc bd 8050 TRANSISTOR QFN 5853
Text: CDQ0303-QS 500 MHz to 6000 MHz Dual, Ultra Low-Noise, High IP3 Amplifier Advanced Product Information May 2005 V1.0 1 of 18 Features ❏ Matched Pair of Transistors for Optimum Ballanced Amplifier Design ❏ AlGaAs/InGaAs/AlGaAs pseudomorphic High Electron Mobility Transistor (pHEMT)
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CDQ0303-QS
4202 BD TRANSISTOR
lg 8993
f 4556
TRANSISTOR BD 137-10
C 5478 transistor
329 9148
f 9582 dc
bd 8050 TRANSISTOR
QFN 5853
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R1000 resistor
Abstract: XR1000 R1000 XH1000 receiver mmic sl353 pHEMT transistor MTBF
Text: 17.0-27.0 GHz GaAs MMIC Receiver R1000 May 2002 - Rev 01-May-02 Chip Device Layout Features Fundamental Integrated Receiver 10.0 dB Conversion Gain 3.5 dB Noise Figure 15.0 dB Image Rejection 60.0 dB LO/RF Isolation 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883
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R1000
01-May-02
MIL-STD-883
R1000 resistor
XR1000
R1000
XH1000
receiver mmic
sl353
pHEMT transistor MTBF
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XB1001
Abstract: 84-1LMI B1001 XP1000 XU1000 GERMANIUM SMALL SIGNAL TRANSISTORS
Text: 17.0-27.0 GHz GaAs MMIC Buffer Amplifier B1001 May 2002 - Rev 01-May-02 Features Chip Device Layout Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 20.0 dB Small Signal Gain 3.0 dB Noise Figure +13 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing
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B1001
01-May-02
MIL-STD-883
XB1001
84-1LMI
B1001
XP1000
XU1000
GERMANIUM SMALL SIGNAL TRANSISTORS
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B1000
Abstract: Mimix xb1000 XU1000 pHEMT transistor MTBF
Text: 17.0-27.0 GHz GaAs MMIC Buffer Amplifier B1000 May 2002 - Rev 01-May-02 Features Chip Device Layout Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.8 dB Noise Figure +13 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing
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B1000
01-May-02
MIL-STD-883
B1000
Mimix xb1000
XU1000
pHEMT transistor MTBF
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transistor c815
Abstract: ATF-511P8 LL1005-FH4N7S BCV62C LL1005-FH3N3S MGA-53543 RG200D Medium Power Bipolar Transistors rohm
Text: ATF-511P8 900 MHz High Linearity Amplifier Application Note 1373 Introduction Avago’s ATF-511P8 is an enhancement mode PHEMT designed for high linearity and medium power applications. With an OIP3 of 41 dBm and a 1 dB compression point of 25 dBm, the ATF-511P8 is well suited as a base
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ATF-511P8
ATF-511P8
5988-9547EN
AV02-0972EN
transistor c815
LL1005-FH4N7S
BCV62C
LL1005-FH3N3S
MGA-53543
RG200D
Medium Power Bipolar Transistors rohm
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B1001
Abstract: XB1001 XP1000 XU1000
Text: 17.0-27.0 GHz GaAs MMIC Buffer Amplifier B1001 May 2003 - Rev 10-May-03 Features Chip Device Layout Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 20.0 dB Small Signal Gain 3.0 dB Noise Figure +13 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing
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B1001
10-May-03
MIL-STD-883
B1001
XB1001
XP1000
XU1000
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B1000
Abstract: Mimix xb1000
Text: 17.0-27.0 GHz GaAs MMIC Buffer Amplifier B1000 May 2003 - Rev 10-May-03 Features Chip Device Layout Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.8 dB Noise Figure +13 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing
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10-May-03
B1000
MIL-STD-883
Mimix xb1000
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CHB capacitor Series
Abstract: ATF-521P8 BCV62B BCV62C LL1005-FH2N2S MGA-53543 RG200D ATF-511P8
Text: ATF-521P8 900 MHz High Linearity Amplifier Application Note 1374 Introduction Avago’s ATF-521P8 is an enhancement mode PHEMT designed for high linearity and medium power applications. With an OIP3 of 40 dBm and a 1 dB compression point of 24.4 dBm, the ATF-521P8 is
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ATF-521P8
ATF-521P8
com/pdf/AN0002
ATF-511P8
CHB capacitor Series
BCV62B
BCV62C
LL1005-FH2N2S
MGA-53543
RG200D
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ATF-511P8
Abstract: R747 transistor c815 BCV62B BCV62C LL1005-FH3N3S LL1005-FH4N7S MGA-53543 RG200D
Text: Agilent ATF-511P8 900 MHz High Linearity Amplifier Application Note 1373 Introduction Agilent’s ATF-511P8 is an enhancement mode PHEMT designed for high linearity and medium power applications. With an OIP3 of 41 dBm and a 1 dB compression point of 25 dBm, the ATF-511P8 is well
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ATF-511P8
ATF-511P8
5988-9547EN
R747
transistor c815
BCV62B
BCV62C
LL1005-FH3N3S
LL1005-FH4N7S
MGA-53543
RG200D
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MGA-53543
Abstract: RG200D ATF-521P8 BCV62B BCV62C LL1005-FH2N2S ATF-511P8
Text: Agilent ATF-521P8 900 MHz High Linearity Amplifier Application Note 1374 Introduction Agilent’s ATF-521P8 is an enhancement mode PHEMT designed for high linearity and medium power applications. With an OIP3 of 40 dBm and a 1 dB compression point of 24.4 dBm, the ATF-521P8 is well
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ATF-521P8
ATF-521P8
com/pdf/AN0002
ATF-511P8
MGA-53543
RG200D
BCV62B
BCV62C
LL1005-FH2N2S
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U1001
Abstract: pHEMT transistor MTBF 84-1LMI XU1001 U100-1 U-10-01 77598
Text: 36.0-40.0 GHz GaAs MMIC Up-Converter U1001 July 2001 - Rev 7/27/01 Features Chip Device Layout 36.0-40.0 GHz Frequency Range 4.0 dB Typical Small Signal Gain 35 dB Typical LO/RF Isolation Low DC Power Consumption Operates at +3.0 VDC 2.90 mm X 2.50 mm Die Size
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U1001
MIL-STD-883
U1001
pHEMT transistor MTBF
84-1LMI
XU1001
U100-1
U-10-01
77598
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B1002
Abstract: 84-1LMI XB1002 OC 140 germanium transistor b1002 100
Text: 36.0-43.0 GHz GaAs MMIC Buffer Amplifier B1002 July 2001 - Rev 7/27/01 Features 36.0-43.0 GHz Frequency Range 25.0 dB Typical Small Signal Gain 4.0 dB Typical Noise Figure +14 dBm Typical Compression Point Operates at +3.0 to +5.5 VDC 2.90 mm X 1.50 mm Die Size
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B1002
MIL-STD-883
B1002
84-1LMI
XB1002
OC 140 germanium transistor
b1002 100
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TRANSISTOR R1002
Abstract: R1002 TRANSISTOR R1002 84-1LMI XR1002
Text: 20.0-32.0 GHz GaAs MMIC Receiver R1002 October 2001 - Rev 10/05/01 Features Chip Device Layout y 20.0-32.0 GHz Frequency Range High Dynamic Range Receiver +4.0 dBm Third Order Intercept 3.0 dB Typical Noise Figure 18.0 dB Typical Image Rejection 100% On-Wafer RF and DC Testing
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R1002
MIL-STD-883
TRANSISTOR R1002
R1002 TRANSISTOR
R1002
84-1LMI
XR1002
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r1003 transistor
Abstract: TRANSISTOR R1003 r1003 XR1003 84-1LMI pHEMT transistor MTBF R100-3
Text: 20.0-32.0 GHz GaAs MMIC Receiver R1003 October 2001 - Rev 10/05/01 Features Chip Device Layout 20.0-32.0 GHz Frequency Range 17.0 dB Typical Conversion Gain 3.0 dB Typical Noise Figure 22.0 dB Typical Image Rejection 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883
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R1003
MIL-STD-883
r1003 transistor
TRANSISTOR R1003
r1003
XR1003
84-1LMI
pHEMT transistor MTBF
R100-3
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transistor R1001
Abstract: mixers circuit using 90 degree hybrid presidio components R1001 XR1001 84-1LMI XH1000 38REC
Text: 36.0-40.0 GHz GaAs MMIC Receiver R1001 May 2002 - Rev 01-May-02 Features Chip Device Layout Sub-Harmonic Receiver 5.0 dB Conversion Gain 4.0 dB Noise Figure 12.0 dB Image Rejection 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883 Method 2010
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R1001
01-May-02
MIL-STD-883
transistor R1001
mixers circuit using 90 degree hybrid
presidio components
R1001
XR1001
84-1LMI
XH1000
38REC
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Untitled
Abstract: No abstract text available
Text: 10.0-13.0/20.0-26.0 GHz GaAs MMIC Active Doubler X1004-BD January 2007 - Rev 17-Jan-07 Features Excellent Mixer Driver 2-Stage Active Design Can be Used to Drive XR1002 Receiver +15 dBm Output Drive 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883
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17-Jan-07
X1004-BD
XR1002
MIL-STD-883
XX1004-BD
XX1004-BD-000V
XX1004-BD-000W
XX1004-BD-EV1
XX1004-BD
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pHEMT transistor MTBF
Abstract: No abstract text available
Text: 17.0-24.0 GHz GaAs MMIC Surface Mount Power Amplifier March 2005 - Rev 01-Mar-05 P1000P1 Features Packaged Chip Device tio n Surface Mount Leadless Package High Linearity Output Amplifier Temperature Compensated Output Power Detector Excellent Input/Output Match
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01-Mar-05
P1000P1
XP1000
pHEMT transistor MTBF
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B1002
Abstract: XP1001 OC 140 germanium transistor pHEMT transistor MTBF 84-1LMI XB1002 XU1001 b1002 100
Text: 36.0-43.0 GHz GaAs MMIC Buffer Amplifier B1002 June 2002 - Rev 26-Jun-02 Features Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 25.0 dB Small Signal Gain 4.0 dB Noise Figure +14 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing
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B1002
26-Jun-02
MIL-STD-883
B1002
XP1001
OC 140 germanium transistor
pHEMT transistor MTBF
84-1LMI
XB1002
XU1001
b1002 100
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transistor Amp 2054 equivalent
Abstract: cdma complete layout drawing ATF-511P8 0402CG189C9B200 0402CG100J9B200 BCV62B LL1005-FH1N0S MGA-53543 ML200D 511P8
Text: High Linearity and Medium Power Applications using the Agilent ATF-511P8 PHEMT Application Note 1327 Introduction Agilent Technologies ATF-511P8 is an enhancement mode PHEMT designed for high linearity and medium power applications. With an OIP3 of 41.3 dBm and a 1 dB
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ATF-511P8
ATF-511P8
com/pdf/AN-0002
5988-8405EN
transistor Amp 2054 equivalent
cdma complete layout drawing
0402CG189C9B200
0402CG100J9B200
BCV62B
LL1005-FH1N0S
MGA-53543
ML200D
511P8
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12DBL0409
Abstract: 84-1LMI XR1002
Text: 10.0-13.0/20.0-26.0 GHz GaAs MMIC Active Doubler 12DBL0409 March 2005 - Rev 01-Mar-05 Features Chip Device Layout tio n Excellent Mixer Driver 2-Stage Active Design Can be Used to Drive XR1002 Receiver +15 dBm Output Drive 100% On-Wafer RF, DC and Output Power Testing
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12DBL0409
01-Mar-05
XR1002
MIL-STD-883
12DBL0409
84-1LMI
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Untitled
Abstract: No abstract text available
Text: 10.0-13.0/20.0-26.0 GHz GaAs MMIC Active Doubler X1004-BD February 2007 - Rev 16-Feb-07 Features Excellent Mixer Driver 2-Stage Active Design Can be Used to Drive XR1002 Receiver +15 dBm Output Drive 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883
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X1004-BD
16-Feb-07
XR1002
MIL-STD-883
XX1004-BD
XX1004-BD-000V
XX1004-BD-EV1
XX1004-BD
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