transistor gl 1117
Abstract: trimmer 3-30 pf BLW60C MSB056
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW60C VHF power transistor Product specification March 1993 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial
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BLW60C
transistor gl 1117
trimmer 3-30 pf
BLW60C
MSB056
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transistor gl 1117
Abstract: MGP485 Transistor gl 1117 B BLW60C IEC 320 C13 MSB056 MGP480
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW60C VHF power transistor Product specification File under Discrete Semiconductors, SC08a March 1993 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,
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BLW60C
SC08a
transistor gl 1117
MGP485
Transistor gl 1117 B
BLW60C
IEC 320 C13
MSB056
MGP480
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BLW85
Abstract: gp550 SOt123 Package TP200
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW85 HF/VHF power transistor Product specification March 1993 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and
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BLW85
BLW85
gp550
SOt123 Package
TP200
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IEC410
Abstract: Philips 2222 capacitors philips 2222 trimmer philips 2222 810 trimmer IEC68 2222 philips Philips 2222 capacitor Philips Film dielectric trimmers 00309
Text: Philips Components Preliminary specification 2222 810 00 . Film dielectric trimmers APPLICATIONS • For consumer and industrial equipment. DESCRIPTION The trimmer consists of an enclosed plastic housing of high temperature resistant material, a brass rotor and
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vanx10-"
60x10
IEC410
Philips 2222 capacitors
philips 2222 trimmer
philips 2222 810 trimmer
IEC68
2222 philips
Philips 2222 capacitor
Philips Film dielectric trimmers
00309
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Untitled
Abstract: No abstract text available
Text: Philips Components Preliminary specification Film dielectric trimmers APPLICATIONS • For consumer and industrial equipment DESCRIPTION The trimmer consists of an enclosed plastic housing of high temperature resistant material, a brass rotor and a plated brass stator with a PTFE
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SMD CAPACITORS color code
Abstract: 22 pf trimmer capacitor smd code capacitor color 22 pf trimmer Philips Film Capacitors PHILIPS capacitors ptfe trimmer philips 100 pf Trimmer Capacitors film dielectric trimmer PTFE smd Capacitor code
Text: SMD Trimmer Capacitors Series 2800S 5 SMD® Trimmer Capacitors Film Dielectric Series 2800S •-'k i& f . Description Part Number Designation SMD® Trimmer Capacitors use a PTFE Teflon film dielectrie for excellent long-term stability and low temperature
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2800S
2800S
0R505
10MHz;
SMD CAPACITORS color code
22 pf trimmer capacitor
smd code capacitor color
22 pf trimmer
Philips Film Capacitors
PHILIPS capacitors
ptfe trimmer philips 100 pf
Trimmer Capacitors
film dielectric trimmer PTFE
smd Capacitor code
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2807C00210MJ
Abstract: 2807C00215MJ SERIES2800CIK
Text: SERIES2800CIK 808 Film Dielectric Trimmer Capacitors For Commercial And Industrial Applications Variable Capacitors 5mm T h e van es of th e trim m er are sta cke d on a sturdy p la s tic b a s e , th e c o lo r of w h ic h in d ic a te s th e m axim um c a p a c ita n c e . T h e d ie lec tric is a film of
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SERIES2800CIK
SERIES2800C/K
2807C00210MJ
2807C00215MJ
SERIES2800CIK
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Philips teflon trimmer
Abstract: No abstract text available
Text: SERIES2 8 0 0 0 /ElL/M 809 • - - | _ _ Film D ielectric Trim m er C apacitors For Professional Applications DESCRIPTION Variable Capacitors
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SERIES2800DIEILIM
Philips teflon trimmer
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PDF
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philips Film-dielectric Trimmer Capacitors
Abstract: No abstract text available
Text: Design data for selecting and applying variable capacitors A. H - Capacitance Limits. Even when the rotor plates in a film dielectric trimmer are competely dis engaged from the stator, a measurable amount of capacitance exists between the capacitor ter
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE fc^E D bbsa^i dos^ m tsd i IAPX BLW60C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized
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BLW60C
nsforFigs16and17:
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BLW 82
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b'lE » bb53T31 QQ2T4MT 374 J APX DLVVO O V H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized and
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bb53T31
BLW 82
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PDF
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431202036640 choke
Abstract: CEF 83 A 3 BLW85 ZL18 blw85 transistor test circuit
Text: PHILIPS INTERN A T I O N A L L.5E D 711Dfi2ti 00b33>4b Ô3Û • PHIN ■ I BLW85 _ A _ H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V . The transistor is resistance stabilized and
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BLW85
QQb3357
431202036640 choke
CEF 83 A 3
BLW85
ZL18
blw85 transistor test circuit
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PDF
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L2-7 TURN
Abstract: BLW30 URA374 MAA331
Text: Philips Semiconductors ^ {□ 5 3 *1 3 1 □ □ E 'iS 'ìS TÛ3 M A P X oductspecification VHF power transistor BLW30 N AMER PHILIPS/DISCRETE fciTE » QUICK REFERENCE DATA RF performance at = 25 °C in a common emitter test circuit. FEATURES MODE OF OPERATION
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BLW30
MBA451
L2-7 TURN
BLW30
URA374
MAA331
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BLW40
Abstract: gp 722
Text: Philips Semiconductors bbSBTBl ODSTaBS DTT ApX _BLW40 VHF power tra n s is to r_ AflER PHILIPS/DISCRETE FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability.
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BLW40
OT120
LA368
BLW40
gp 722
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58W SOT
Abstract: BLW85 ZL18
Text: N AMER P H I L I P S / D IS C R ET E b ^E D b b S 3 T 31 • 0 0 2 ^ 4 ^ 574 IAPX D L V V O O A H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f, transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized and
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bbS3T31
BLW85
7Z77540
7Z77541
58W SOT
BLW85
ZL18
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BLW10
Abstract: BLW40 mcd202 philips Film-dielectric Trimmer Capacitors 808 RF POWER TRANSISTOR NPN vhf sot120 LA 4451 philips Trimmer 60 pf QDST337 BLw vhf
Text: Philips Semiconductors M b b S B 1^ ! DTT • AP X Productspecification VHF power tr a n s is to r _ BLW40 AMER PHILIPS/DISCRETE b^E » FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures
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BLW40
OT120
-SOT120
MBA451
BLW10
BLW40
mcd202
philips Film-dielectric Trimmer Capacitors 808
RF POWER TRANSISTOR NPN vhf
sot120
LA 4451
philips Trimmer 60 pf
QDST337
BLw vhf
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A367
Abstract: BLV12 IEC134 SOT123
Text: * Philips Sem iconductors ^ " b S E VHF power transistor OObSflm *^M5 M P H I N Product specification D — philips BLV12 international Q U IC K R EFER E N C E DATA RF performance at Tnfc = 25 °C in a common emitter test circuit. FEATURES • Emitter-ballasting resistors for
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7110fl5b
BLV12
OT123
OT123
MRA370
MBA45I
A367
BLV12
IEC134
SOT123
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PDF
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bb53^31 OOE^SH? BLW 9 7 b'lE D IAPX Jl H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor designed fo r use in class-A, AB and B operated high-power industrial and military transmitting equipment in the h.f. band. The transistor offers excellent performance as a linear amplifier in s.s.b. applications. It is resistance
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BLW40
Abstract: MCD205 TLO 721
Text: Philips Sem iconductors I 7 1 1 DS2 b 0 0 t>3232 3 bS ^BPHIN PHILIPS INTERNATIONAL VHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. Product specification
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711065b
00b3535
BLW40
OT120
PINNING-SOT120
BLW40
MCD205
TLO 721
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PDF
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mcd206
Abstract: philips Trimmer 60 pf BLV13 MCD211 C106W
Text: Philips Sem iconductors VHF power transistor • bSE D DQbSûES P H IL IP S T ll PHI N Emitter-ballasting resistors for an optimum temperature profile Gold metallization ensures excellent reliability. IN T E R N A TIO N A L NPN silicon planar epitaxial transistor encapsulated in a 4-lead
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BLV13
OT123
PINNING-SOT123
MCD210
MBA451
MCD211
mcd206
philips Trimmer 60 pf
BLV13
MCD211
C106W
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PDF
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Untitled
Abstract: No abstract text available
Text: Philips Sem iconductors b b 5 3 ^ 3 1 DDE6TES 756 APX Product specification BLV13 VHF power transistor M AUER PHILIPS/DISCRETE QUICK REFERENCE DATA RF performance at T ^ = 25 °C in a common emitter test circuit. FEATURES • Gold metallization ensures excellent reliability.
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BLV13
bbS3131
MCD211
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PDF
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b'lE D b b S B ' m DDETBflD DM2 * A P X BLW77 J V . H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am
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BLW77
28The
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PDF
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bbS3^31 DOSISSS ‘IbO BLW98 b^E D IAPX U.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers o f T V transposers and transmitters in band IV-V, as well as for driver stages in tube systems.
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BLW98
7Z78110
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PDF
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bTE APX bb53^31 DOEIMB D ll BLV75/12 T> V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 175 MHz communications band. Features • multi-base structure and emitter-ballasting resistors for an optimum temperature profile
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BLV75/12
OT-119)
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PDF
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