Silicon Detector
Abstract: hybrid charge pinFET 900nm LED
Text: HYBRID PHOTODETECTORS API’s standard hybrid photodetectors are devices in which both a detector and transimpedance amplifier are mounted together on a common substrate, within a hermetic package. Hybrid devices offer numerous practical and performance benefits,
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10kHz
50x10-3
0x10-13
5x10-6
900nm
Silicon Detector
hybrid charge
pinFET
900nm LED
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LN68
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN68 GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 5 mW typ. • Light emitting spectrum suited for silicon photodetectors : XP = 950 nm (typ.)
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Infrared Emitting Diode
Abstract: LNA2901L
Text: Panasonic Infrared Light Emitting Diodes LNA2901L GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : Ie = 9 m W /sr min. • Light emitting spectrum suited for silicon photodetectors • Transparent epoxy resin package
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LNA2901L
Infrared Emitting Diode
LNA2901L
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V30K20
Abstract: L440 diode GaAs 1000 nm Infrared Emitting Diode Infrared Emitting Diode LN54 LA440
Text: Panasonic Infrared Light Emitting Diodes LN54 GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 4.6 mW typ. • Light emitting spectrum suited for silicon photodetectors • Infrared light emission close to m onochromatic light :
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LNA2801L
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LNA2801L GaAIAs on GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : Ie = 6 m W /sr min. • Light emitting spectrum suited for silicon photodetectors
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LNA2801L
LNA2801L
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photodetector 850 nm
Abstract: G417603 Ultrafast Photodetectors GmbH G4176-03
Text: PRELIMINARY DATA ULTRAFAST MSM PHOTODETECTORS G4176 SERIES GaAs G7096 SERIES (InGaAs) Ultrafast response of several tens picosecond FEATURES Ultrafast response G4176-03 : tr , tf = 30 ps (Typ.) G7096-03 : tr = 40 ps (Typ.) Low dark current G4176 series : 100 pA (Ta=25 °C)
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G4176
G7096
G4176-03
G7096-03
G4176-03
G4176-01
G7096-01
photodetector 850 nm
G417603
Ultrafast Photodetectors GmbH
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Hamamatsu Photomultiplier Socket 14 Pin
Abstract: Hamamatsu photomultiplier M7279
Text: AMPLIFIER MODULES M7279, M8879 The M7279 and M8879 are non-inverting amplifier modules, specifically designed for photodetectors such as photomultiplier tubes. These amplifier modules work with either a current or voltage input, allowing direct connection to a photomultiplier tube or other photodetectors. The M7279 is comprised of an 8-pin SIP single inline package type hybrid IC
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M7279,
M8879
M7279
M8879
10-pin
M7279:
M8879:
SE-171-41
Hamamatsu Photomultiplier Socket 14 Pin
Hamamatsu photomultiplier
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LN66F GaAs Infrared Light Emitting Diode For optical control systems • Features High-power output, high-efficiency: Ie = 13.0 mW/sr (min.) Emitted light spectrum suited for silicon photodetectors
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2002/95/EC)
LN66F
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tic 1060
Abstract: No abstract text available
Text: E G & G/C ANADA/OPTOELEK ID 303Qb]>a DOOGIGI 7^3 « C A N A Photodiode i t e i C30807, C30808, C30809 Optics E ,e c t n o l C30810, C30822, C30831 DATA SHEET V l ’ S " 3 N-Type Silicon p-i-n Photodetectors L-571 C30810 1-568 C30807 C30831 C30808 C30809,
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303Qb]
C30807,
C30808,
C30809
C30810,
C30822,
C30831
C30808
C30809,
C30822
tic 1060
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Untitled
Abstract: No abstract text available
Text: 1.25Gbps / 2.50Gbps Hybrids InGaAs Photodetectors / Transimpedance Amplifiers APPLICATIONS FEATURES  High  InGaAs Speed Optical Communications ÂGigabit Ethernet  Fibre Channel  ATM  SONET OC-48 / SDH STM-16 Photodetector / Low Noise Transimpedance Amplifier
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25Gbps
50Gbps
1100nm
1650nm
OC-48
STM-16
FCI-H125/250G-InGaAs-XX
1310nm.
fci-h125
250g-ingaas
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udt 9dmi
Abstract: spot photodiode UDT Sensors PSD SPOT-2D 801 87 XXX 20 001 SPOT-9D 350-1100nm
Text: Segmented Photodiodes SPOT Series Position Sensing Detector (PSD) The SPOT Series are common substrate photodetectors segmented into either two (2) or four (4) separate active areas. They are available with either a 0.005" or 0.0004" well defined gap between the adjacent
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350-1100nm.
udt 9dmi
spot photodiode
UDT Sensors PSD
SPOT-2D
801 87 XXX 20 001
SPOT-9D
350-1100nm
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phototransistor sensitive to red light
Abstract: Infrared Phototransistor color sensitive PHOTO TRANSISTOR LED Reflective Optical Sensor phototransistor visible light VISIBLE LIGHT PHOTOdarlington TRANSISTOR all datasheet phototransistor PHOTO GAP DETECTOR photo transistor application VISIBLE LIGHT PHOTOTRANSISTOR
Text: General Technical Information J WHAT IS A PHOTOMICROSENSOR? Photomicrosensors are small photodetectors that use light to sense the presence, absence, or position of objects. They are typically constructed as either slot transmissive type or diffuse (reflective) type.
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E67349
Abstract: No abstract text available
Text: TLP2118 TOSHIBA PHOTOCOUPLER GaAℓAs Ired & PHOTO-IC TLP2118 PDP Plasma Display Panel Unit: mm 8 7 6 5 The Toshiba TLP2118 consists of GaAℓAs infrared light emitting diodes and integrated high-gain, high-speed photodetectors. The TLP2118 is housed in the SO8 package.
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TLP2118
TLP2118
E67349
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MRD300
Abstract: MRD3011 MRD750 MRD740 8205 A motorola triac driver MRD150 MRD3051 MRD3054 MRD3056
Text: OPTOELECTRONICS — EMITTERS/DETECTORS continued Silicon Photodetectors (continued) Phototransistors Light Current VCC H mW/cm2 V(BR)CEO Volts Min Device MRQ150 2.2 20 5.0 40 2.5/4.0 20 1000 173-01 Style 1 MRD310 MRD300 3.5 8.0 20 20 5.0 5.0 50 50 2.0/2.5
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MRD150
MRD310
MRD300
MRD3050
MRD3051
MRD3054
MRD3055
MRD3056
MRD701
MRD740*
MRD3011
MRD750
MRD740
8205 A
motorola triac driver
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Untitled
Abstract: No abstract text available
Text: ULTRAFAST MSM PHOTODETECTORS G4176 SERIES GaAs Ultrafast response of several tens picosecond FEATURES Ultrafast response *1 tr , tf = 30 ps (Typ.) Low dark current 100 pA (Ta=25 °C) Large photosensitive area 200 mm *1: Values excluding response time of light source, bias tee, assembly circuit,
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G4176
G4176-03
G4176-01
G4176-03
SE-164
LPRD1022E05
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Untitled
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN66F G aAs Infrared Light Emitting Diode For light source of remote control systems • Features • High-power output, high-efficiency : Ie = 13.0 mW/sr min. • Light emitting spectrum suited for silicon photodetectors
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LN66F
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Untitled
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN69 G aAs Infrared Light Emitting Diode For optical control systems • Features • High-power output, high-efficiency : Ie = 3.5 mW /sr min. • Light emitting spectrum suited for silicon photodetectors : A,P = 940 nm (typ.)
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Untitled
Abstract: No abstract text available
Text: TSUS4400 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSUS4400 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. The device is spectrally matched to silicon photodetectors.
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TSUS4400
TSUS4400
2002/95/EC
2002/96/EC
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN66A G aAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : Ie = 9 m W /sr min. • Light em itting spectrum suited for silicon photodetectors • Good radiant pow er output linearity with respect to input current
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LN66A
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Untitled
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LNA2801L GaAIAs on G aAs Infrared Light Emitting Diode For optical control systems • Features • • • • High-power output, high-efficiency : Ie = 6 mW /sr min. Light emitting spectrum suited for silicon photodetectors
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LNA2801L
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C684
Abstract: C685 CENTRALAB ME7024 C686 ME60 ME61 ME7021 ME7121 ME7124
Text: Infrared Emitters and Photodetectors Infrared emitters are available from Monsanto in a number of package configurations, sizes, output power ratings, and radiation angles. In addition, silicon phototransistors are available in two sensi tivity categories.
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ME7021
ME7121
ME7161
550/jW
ME4/M120C
MIL-S-750.
C684
C685
CENTRALAB
ME7024
C686
ME60
ME61
ME7021
ME7121
ME7124
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ic iR light control
Abstract: VF 100 PANASONIC pulse forward current
Text: Panasonic Infrared Light Emitting Diodes LN58 G aAs Infrared Light Em itting Diode For optical control systems • Features « H igh-pow er output, high-efficiency : P Q = 3.5 m W typ. « Light em itting spectrum suited for silicon photodetectors t Infrared light em ission close to m onochrom atic light :
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0102Q.
ic iR light control
VF 100 PANASONIC
pulse forward current
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Untitled
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN62S G aAs Infrared Light Em itting Diode For optical control systems This product can be combined with various types of silicon photodetectors such as the PN120S to form optical controllers. • Features • High-power output, high-efficiency : PQ = 3.5 mW typ.
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LN62S
PN120S
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Untitled
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN68 G aAs Infrared Light Em itting Diode For optical control systems • Features • High-power output, high-efficiency : PQ = 5 mW typ. • Light emitting spectrum suited for silicon photodetectors : XP = 950 nm (typ.)
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0102Q.
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