IR photodiode
Abstract: PIN Photodiode vr 1K 700NM photodiode si pin photodiode KDP6004A rise time of photodiode rise time of silicon photodiode 1K VR
Text: NEW PRODUCT Silicon PIN Photodiode KDP6004A Description The KDP6004A is high-speed silicon pin photodiode in COB package and responds to wavelengths from 700nm to 1050nm. Features - High sensitive Si PIN Photodiode - Chip on Board Package - High Speed Response
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KDP6004A
KDP6004A
700nm
1050nm.
1000Lux
IR photodiode
PIN Photodiode
vr 1K
photodiode
si pin photodiode
rise time of photodiode
rise time of silicon photodiode
1K VR
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Untitled
Abstract: No abstract text available
Text: VTB Process Photodiode VTB8440H, 8441H PACKAGE DIMENSIONS inch mm CASE 21 8 mm CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer
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VTB8440H,
8441H
VTB8440H
VTB8441H
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high speed photodiode detector circuit
Abstract: KDP6004A PIN Photodiode Si pin photodiode module Photodiode pin sensitivity silicon pin photodiode rise time of silicon photodiode 700NM IR photodiode ir photodiode wavelength
Text: Silicon PIN Photodiode KDP6004A Dimensions The KDP6004A is high-speed silicon pin photodiode [Unit : mm] in COB package and responds to wavelengths from 700nm to 1050nm. Features Higly sensitive Si PIN photodiode. Chip On Board package. High speed response.
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KDP6004A
KDP6004A
700nm
1050nm.
2856K
high speed photodiode detector circuit
PIN Photodiode
Si pin photodiode module
Photodiode pin sensitivity
silicon pin photodiode
rise time of silicon photodiode
IR photodiode
ir photodiode wavelength
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Untitled
Abstract: No abstract text available
Text: VTB Process Photodiode VTB9412H, 9413H PACKAGE DIMENSIONS inch mm CASE 20 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Small area planar silicon photodiode in a recessed ceramic package. The chip is coated
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VTB9412H,
9413H
VTB9412H
VTB9413H
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D92-02
Abstract: 8441H d9202 VTB8440H NM40
Text: VTB Process Photodiode VTB8440H, 8441H PACKAGE DIMENSIONS inch mm CASE 21 8 mm CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer
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VTB8440H,
8441H
VTB8440H
VTB8441H
D92-02
8441H
d9202
VTB8440H
NM40
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9413H
Abstract: rsh8
Text: VTB Process Photodiode VTB9412H, 9413H PACKAGE DIMENSIONS inch mm CASE 20 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Small area planar silicon photodiode in a recessed ceramic package. The chip is coated
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VTB9412H,
9413H
VTB9412H
VTB9413H
9413H
rsh8
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Photodiode cost sheet
Abstract: die-attach cl 1100 optical fiber detector photoconductive Photodiode submount submount PD submount
Text: PHOTONIC High Speed Silicon Photodiode, Photoconductive chip on submount Type PDB-C116 DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] METALIZATION THIS SIDE C L .040 [1.02] .060 [1.52] PD I CL .030 [0.76] NOTE: PHOTODIODE CHIP TO BE EUTECTICALLY DIE ATTACHED TO SUBMOUNT CERAMIC
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PDB-C116
PDB-C116
100-PDB-C116
Photodiode cost sheet
die-attach
cl 1100
optical fiber detector photoconductive
Photodiode submount
submount
PD submount
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Untitled
Abstract: No abstract text available
Text: QSE773 Sidelooker Pin Photodiode Features Description • Daylight filter The QSE773 is a plastic silicon pin photodiode in a sidelooker package. ■ Sidelooker package ■ Pin photodiode ■ Wide reception angle, 120° ■ Chip size = 0.107 sq. inches 2.71 sq. mm
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QSE773
QSE773
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QSE773
Abstract: PIN Photodiode IR photodiode Photodiode a C-32V
Text: QSE773 Sidelooker Pin Photodiode Features Description • Daylight filter The QSE773 is a plastic silicon pin photodiode in a sidelooker package. ■ Sidelooker package ■ Pin photodiode ■ Wide reception angle, 120° ■ Chip size = 0.107 sq. inches 2.71 sq. mm
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QSE773
QSE773
PIN Photodiode
IR photodiode
Photodiode a
C-32V
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QSE773
Abstract: IR LED direct exposure to photodiode
Text: QSE773 Sidelooker Pin Photodiode Features Description • Daylight filter The QSE773 is a plastic silicon pin photodiode in a sidelooker package. ■ Sidelooker package ■ Pin photodiode ■ Wide reception angle, 120° ■ Chip size = 0.107 sq. inches 2.71 sq. mm
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QSE773
QSE773
IR LED direct exposure to photodiode
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quadrant photodiode
Abstract: PSS33Q-6-C PSS33Q-6-TO5
Text: DATA SHEET PSS33Q-6-C SILICON PHOTODIODE TYPE PSS33Q-6-C CHIP PSS33Q-6-C is a quadrant silicon photodiode chip with an active area of 1.42 mm2 for each quadrant. Quadrant photodiodes find applications in electro-mechanical apparatus and are frequently used in
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PSS33Q-6-C
PSS33Q-6-C
PSS33Q-6-TO5.
quadrant photodiode
PSS33Q-6-TO5
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S268P
Abstract: No abstract text available
Text: S268P Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant
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S268P
S268P
D-74025
15-Jul-96
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Untitled
Abstract: No abstract text available
Text: PCB Chip Type Concave Chip Photodiode with Flat Top TCI Part No. TIRSPD-P2F-3227C Matrial Silicon SMD Photodiode Chip IL Power mW/sr Rise & Fall Time V(BR) R (nS) Min.(V) Ee=mW/cm2 Typ.(uA) Ee=mW/cm2 Max.(nA) Lens Color Water Clear 10/10 32 1.0 6.5 10 www.taitroncomponents.com
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TIRSPD-P2F-3227C
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dual photodiode
Abstract: PSS33D-6-C PSS33D-6-TO5
Text: DATA SHEET PSS33D-6-C SILICON PHOTODIODE TYPE PSS33D-6-C CHIP PSS33D-6-C is a dual silicon photodiode chip with an active area of 2.7 mm2 for each half. Dual photodiodes are used in null sensing circuits such as used in electronic balances and line followers. The chip may be mounted on custom circuit boards or
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PSS33D-6-C
PSS33D-6-C
PSS33D-6-TO5.
dual photodiode
PSS33D-6-TO5
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Untitled
Abstract: No abstract text available
Text: OID2 6 n/p photodiode array chip _ General Description Optical device consisting of a 6 chip silicon N/P photodiode array with high uniformity for the output signals. The active area of the silicon die is 2.5 x 1.1 mm2. The high optical responsivity is due to the antireflective
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030mm
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Untitled
Abstract: No abstract text available
Text: Photodiode arrays with amplifiers S11865-64/-128/-256 S11866-64-02/-128-02 Photodiode arrays combined with signal processing IC The S11865/S11866 series are Si photodiode arrays combined with a signal processing IC chip. X-ray tolerance has been improved compared to the previous products S8865/S8866 series . The signal processing IC chip is formed by CMOS process
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S11865-64/-128/-256
S11866-64-02/-128-02
S11865/S11866
S8865/S8866
B1201,
KMPD1134E04
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE Si PIN photodiode array S8558 Surface mountable 16-element photodiode array S8558 is a 16-element Si PIN photodiode array in a ceramic chip carrier package suitable for surface mount using solder reflow techniques. S8558 can be used in a wide range of applications including spectrophotometer and position detection.
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S8558
16-element
S8558
SE-171
KMPD1062E01
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE Si PIN photodiode array S8558 Surface mountable 16-element photodiode array S8558 is a 16-element Si PIN photodiode array in a ceramic chip carrier package suitable for surface mount using solder reflow techniques. S8558 can be used in a wide range of applications including spectrophotometer and position detection.
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S8558
16-element
S8558
SE-171
KMPD1062E01
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Photodiode
Abstract: No abstract text available
Text: OID2 6 n/p photodiode array chip _ General Description Optical device consisting of a 6 chip silicon N/P photodiode array with high uniformity for the output signals. The active area of the silicon die is 2.5 x 1.1 mm2. The high optical responsivity is due to the antireflective
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030mm
Photodiode
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Untitled
Abstract: No abstract text available
Text: Photodiode arrays with ampli¿er S8866-64/-128 Photodiode array combined with signal processing IC The S8866-64 and S8866-128 are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge ampli¿er array, clamp circuit and
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S8866-64/-128
S8866-64
S8866-128
S8866-64G-02,
S8866128G-02)
S8866-64:
S8866-128:
SE-171
KMPD1104E02
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S8558
Abstract: 16 Photodiode-Array PIN-Photodiode-Array KMPD1062E01 SE-171 Photodiode Array
Text: PHOTODIODE Si PIN photodiode array S8558 Surface mountable 16-element photodiode array S8558 is a 16-element Si PIN photodiode array in a ceramic chip carrier package suitable for surface mount using solder reflow techniques. S8558 can be used in a wide range of applications including spectrophotometer and position detection.
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S8558
16-element
S8558
SE-171
KMPD1062E01
16 Photodiode-Array
PIN-Photodiode-Array
KMPD1062E01
Photodiode Array
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE Si PIN photodiode array S8558 Surface mountable 16-element photodiode array S8558 is a 16-element Si PIN photodiode array in a ceramic chip carrier package suitable for surface mount using solder reflow techniques. S8558 can be used in a wide range of applications including spectrophotometer and position detection.
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S8558
16-element
S8558
SE-171
KMPD1062E01
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S8558
Abstract: 16 Photodiode-Array KMPD1062E01 SE-171
Text: PHOTODIODE Si PIN photodiode array S8558 Surface mountable 16-element photodiode array S8558 is a 16-element Si PIN photodiode array in a ceramic chip carrier package suitable for surface mount using solder reflow techniques. S8558 can be used in a wide range of applications including spectrophotometer and position detection.
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S8558
16-element
S8558
SE-171
KMPD1062E01
16 Photodiode-Array
KMPD1062E01
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IE-120
Abstract: VB0 MARKING
Text: SIEMENS KOM 2045 8-CHIP SILICON PHOTODIODE ARRAY VERY LOW DARK CURRENT F EA T U R E S * Silicon Photodiode in Planar Technology Package Dimensions in mm PC board Frame Chip Transparent * N-Si Material Anode, Front Contact Cathode, Back Contact * High Reliability
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K0M204S
IE-120
VB0 MARKING
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