diode t25 4 A0
Abstract: No abstract text available
Text: SIEMENS SFH4446 TRANSCEIVER OPTICAL MODULE FEATURES Maximum Ratings * Bidirectional Module with Integrated WDM * Emission Wavelenght: 1300 nm * Suitable for Bit Rates up to S65 Mbit/s Output power ratings refer to the SM fiber output. The operating temperature of the submount is identical with the case temperature.
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SFH4446
diode t25 4 A0
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SFH4423
Abstract: No abstract text available
Text: SIEMENS SFH 4423/4424 LOW POWER LASERDIODE SM FIBER PIGTAIL FEATURES • InGaAsP/lnP MCRW Laserdiode • 10/125 nm Single Mode Pigtail M axim um R ating s Output power ratings refer to the fiber output. The operating temperature of the submount is identical with the case
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SFH4423/4424
SFH4423
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LED LASER
Abstract: ausn submount
Text: LSUB Vishay Electro-Films Ceramic Submount for High Power LED FEATURES • Ultra-low thermal resistance • Eutectic or epoxy LED die attach pads • Surface-mounted component assembly APPLICATIONS The LSUB series substrates are ceramic LED package bases designed to provide thermal management for high
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18-Jul-08
LED LASER
ausn submount
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Untitled
Abstract: No abstract text available
Text: LASERS & MATERIAL PROCESSING I OPTICAL SYSTEMS I INDUSTRIAL METROLOGY I TRAFFIC SOLUTIONS I DEFENSE & CIVIL SYSTEMS Vertical Diode Laser Stacks cw, actively cooled, with collimation, 807 nm JOLD-x-CAFN-xA Design 2104xxx26 210480326 3 submounts 210480426 (4 submounts)
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2104xxx26
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JET-635-05
Abstract: No abstract text available
Text: JET-635-05 Description JET-635-05 is a single chip RED LED emitter, utilizing a single high power chip die with a clear epoxy lens offering ultra low divergence beam of perfectly square proportions. It features a full metal submount with M12x1 thread for convenient installation and ideal heat dissipation
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JET-635-05
JET-635-05
M12x1
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Untitled
Abstract: No abstract text available
Text: rev.2.0 07.05.15 DUV-OC39 • • • • Deep Ultraviolet Light Emission Source 265, 280, 310, 325, 340 nm TO39 open submount Beam angle 144 deg. Description DUV-OC39 is a series of AlGaN based single emitter DEEP-UV LEDs in an open TO39 metal can package, with a beam angle of
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DUV-OC39
DUV-OC39
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CST-15
Abstract: CST15-915 SPT-110
Text: Product Summary Pump Semiconductor Laser Chip on Submount CST15-915 CST15-975 The Chip on Submount COS Features Semiconductor Lasers are a compact, ▲ Economical and easily integrated ▲ Collimated fast axis output ▲ High brightness source amplifiers. The COS product consists
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CST15-915
CST15-975
270PSSPT-02
SPT-110
CST-15
CST15-915
SPT-110
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JET-735-10
Abstract: No abstract text available
Text: JET-735-10 Description JET-735-10 is a single chip IR LED emitter, utilizing a single high power chip die with a clear epoxy lens offering ultra low divergence beam of perfectly square proportions. It features a full metal submount with M12x1 thread for convenient installation and ideal heat dissipation
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JET-735-10
JET-735-10
M12x1
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JET-685-05
Abstract: No abstract text available
Text: JET-685-05 Description JET-685-05 is a single chip LED emitter, utilizing a single high power chip die with a clear epoxy lens offering ultra low divergence beam of perfectly square proportions. It features a full metal submount with M12x1 thread for convenient installation and ideal heat dissipation
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JET-685-05
JET-685-05
M12x1
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Untitled
Abstract: No abstract text available
Text: Cree EZ1000 Gen II LEDs Data Sheet CxxxEZ1000-Sxx000-2 Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly eficient InGaN materials with Cree’s proprietary optical design and device submount technology to deliver superior value for highintensity LEDs. The optical design maximizes light extraction eficiency and enables a Lambertian radiation pattern.
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EZ1000â
CxxxEZ1000-Sxx000-2
EZ1000
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Untitled
Abstract: No abstract text available
Text: LASERS & MATERIAL PROCESSING I OPTICAL SYSTEMS I INDUSTRIAL METROLOGY I TRAFFIC SOLUTIONS I DEFENSE & CIVIL SYSTEMS Vertical Diode Laser Stacks cw, actively cooled, with collimation, 808 nm JOLD-x-CABN-xA Design 210436x26 210436126 4 submounts 210436226 (6 submounts)
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210436x26
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LEMO
Abstract: SOA1300MRI/P Peltier element CH-6805 lemo connector
Text: SOA 1300MRI Optical Amplifier Module 1.30 µm λ-Window REV 09/01 Features Specifications @ T submount = 20°C High gain Model Unit Low polarization dependence Low ripple High output saturation power 1.30 µm wavelength window mA 250 °C 10 35 Maximum Gain (G
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1300MRI
SOA1300MRI
SOA1300CRI
SOA1300MRI/A
SOA1300MRI/P
CH-6805
LEMO
SOA1300MRI/P
Peltier element
lemo connector
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EZ1000
Abstract: 460nm ez130 C460EZ1000-S30000 EZ1000 LED
Text: Cree EZ1000 LEDs Data Sheet CxxxEZ1000-Sxx000 Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary optical design and device submount technology to deliver superior value for highintensity LEDs. The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern.
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EZ1000TM
CxxxEZ1000-Sxx000
EZ1000
460nm
ez130
C460EZ1000-S30000
EZ1000 LED
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6805
Abstract: M 1535 CH-6805 DSA0013226
Text: SOA 1550CRI Optical Amplifier Chip 1.55µm λ-Window REV 09/01 Specifications @ T Submount = 20°C Features High gain Low polarization dependence Low ripple High output saturation power Model Unit Supply current Maximum Gain (G ma x ) Gain ripple @ G = 20 dB
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1550CRI
SOA1550CRI/A
SOA1550CRI/P
CH-6805
6805
M 1535
DSA0013226
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Oclaro
Abstract: No abstract text available
Text: 8W 808nm 190 m High Power Single Emitter Laser Diode on Submount SES8-808A/B-01 Features: • 3.6mm x 0.4mm laser diode • 190μm wide emitter • 8W operating power p-side down mounted • Highly reliable single quantum well MBE structure • RoHS compliant
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808nm
SES8-808A/B-01
SES8-808A/B-01
808nm
BH12915
Oclaro
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Untitled
Abstract: No abstract text available
Text: 9W 9xxnm 90 m High Power Single Emitter Laser Diode on Submount SES9-9xx-01 Features: • 3.6mm x 0.4mm laser diode • 90μm wide emitter • 9W operating power p-side down mounted • Highly reliable single quantum well MBE structure • Standard wavelength at 915, 940, 960
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SES9-9xx-01
975nm
SES9-9xx-01
900-1070nm
BH12915
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Untitled
Abstract: No abstract text available
Text: Preliminary Data sheet 5W 9xx nm High Power Single Emitter Laser Diode on Submount Features SES5-9xx-01 • Available in the wavelength range 780-1060nm The Bookham Technology SES5-9xx-01 single emitter laser diode series have been designed to provide the
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SES5-9xx-01
780-1060nm
SES5-9xx-01
21CFR
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808nm 1W laser diode
Abstract: 808nm 1W 808nm W0808 PCW-CS-200-W0808 808nm VCSEL Laser diode laser 808nm 200mW laser diode 200mw
Text: 200mW Multi-Mode 808nm VCSEL Diode Part # PCW-CS-200-W0808 • • • • • Vertical-Cavity Surface-Emitting Laser technology >200mW CW multi-mode power at 808nm Circular, low-diverging beam Custom wavelengths available 808-1064nm Custom packaging available (submount, Cmount, TO can)
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200mW
808nm
PCW-CS-200-W0808
808nm
808-1064nm)
270mA,
200mW,
808nm 1W laser diode
808nm 1W
W0808
PCW-CS-200-W0808
808nm VCSEL Laser
diode laser 808nm 200mW
laser diode 200mw
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DiCap
Abstract: D30XXKITA5PX BH film CAPACITORS
Text: DICAP High Performance single layer ceramic capacitors for RF and Microwave / Millimeter Wave applications FUNCTIONAL APPLICATIONS: BENEFITS: DC Blocking, RF Bypass, Filtering, Tuning and Submounts. Gold metallization for wire bonding Rugged construction
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Untitled
Abstract: No abstract text available
Text: BORDER CAP Single Layer Capacitors with recessed metallization. Available with borders on both sides. FUNCTIONAL APPLICATIONS: DC Blocking, RF Bypass, Filtering, Tuning and Submounts. BENEFITS: Recessed metallization minimizes the potential for shorting during die attach.
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laser diode submount
Abstract: C975 C915 2 Wavelength Laser Diode submount bookham diode
Text: 6W 9xx nm High Power Single Emitter Laser Diode on Submount SES6-9xx-01 The Bookham SES6-9xx-01 single emitter laser diode series has been designed to provide the high output power, high coupling efficiency and high reliability required for fiber laser pumping and other high power
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SES6-9xx-01
SES6-9xx-01
mo21CFR
laser diode submount
C975
C915
2 Wavelength Laser Diode
submount
bookham diode
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SES9-975-01
Abstract: laser diode submount SES9-940-01 laser 940nm
Text: Data Sheet 9W 940nm High Power Single Emitter Laser Diode on Submount SES9-9xx-01 The Bookham SES9-9xx-01 single emitter laser diode series has been designed to provide the high output power, high coupling efficiency and high reliability required for pumping next
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940nm
SES9-9xx-01
SES9-9xx-01
60825Edition
1070nm
21CFR
BH13929
SES9-975-01
laser diode submount
SES9-940-01
laser 940nm
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EZ1000
Abstract: intensity C527EZ1000-S11000-2 C527EZ1000 ez100 ausn submount
Text: Cree EZ1000 Gen II LEDs Data Sheet CxxxEZ1000-Sxx000-2 Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary optical design and device submount technology to deliver superior value for highintensity LEDs. The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern.
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EZ1000TM
CxxxEZ1000-Sxx000-2
EZ1000
intensity
C527EZ1000-S11000-2
C527EZ1000
ez100
ausn submount
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MTC340SS-UV
Abstract: No abstract text available
Text: Ultraviolet LED Chip Product No: M T C 340SS-UV Peak Emission Wavelength: 340 nm The MTC340SS-UV UV chip on large silicon submount is specifically designed for applications requiring high radiant power output and custom packaging solutions. FEATURES APPLICATIONS
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340SS-UV
MTC340SS-UV
870um
770um
340SS
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