3335
Abstract: PIN-Photodiode-Array PHOTODIODE 4 CHANNEL ARRAY photodiode die WAFER Photodiode Array EMCORE photodiode array
Text: 1 x 12 GaAs PIN Photodiode Array Product Description EMCORE’s 12 channel Gallium Arsenide GaAs PIN photodiode array is designed for multimode fiber applications. Utilizing EMCORE’s own state-of-the-art MOCVD wafer foundry and device fabrication facility guarantees a reliable high volume fabrication source of package ready die to meet the growing
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3335
PIN-Photodiode-Array
PHOTODIODE 4 CHANNEL ARRAY
photodiode die WAFER
Photodiode Array
EMCORE photodiode array
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InGaas PIN photodiode, 1550 ,sensitivity
Abstract: JDS Uniphase photodiode epm 605 InGaAs photodiodes 1310 1550 PIN Photodiode 4 Ghz 1550 nm JDS Uniphase photodiode epm pin photodiode 1550 sensitivity JDSU EPM
Text: Product Bulletin C-Band, L-Band, Pass Band Low Leakage PIN Photodiodes EPM 6xx Series The JDS Uniphase EPM 6xx Series PIN photodiodes are designed for optical network monitoring applications. The photodiode die is fabricated with a proprietary InGaAs process in
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JDS Uniphase photodiode epm 605
Abstract: JDS Uniphase photodiode epm 606LL InGaas PIN photodiode, 1550 sensitivity pin photodiode 1550 sensitivity epm 6xx series pin photodiode 1550 InGaas PIN photodiode, 1550 sensitivity application photodiode 1550 nm EPM605LL
Text: Product Bulletin EPM 6xx Series C-Band, L-Band, Pass Band Low Leakage PIN Photodiodes 605 606 613 650 The JDS Uniphase EPM 6xx Series PIN photodiodes are designed for optical network monitoring applications. The photodiode die is fabricated with a proprietary InGaAs process in
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SF107
Abstract: No abstract text available
Text: Opto Products Semelab Opto-Electronic Components, Modules and Solutions OPTO CHIP DESIGN WAFER PROCESSING A Proven Record The Semelab Group has been a leading provider of high-end, innovative electronic solutions since 1974. A diverse, worldwide customer base benefits from our design innovation, our
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FM36235
M1040
1360/M
VQC-03-003050
VQC-03-003049
U3158
2M8S02
A1006
SF107
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FVOV6870
Abstract: MIL-HDBK-263 chip diode "sawn on foil" photodiode CIE eye response
Text: T1610P Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 2.97 x 2.97 x 0.28 • Wafer diameter (in mm): 100 • Radiant sensitive area (in mm2): 7.7 • High photo sensitivity
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T1610P
T1610P
2002/95/EC
2002/96/EC
18-Jul-08
FVOV6870
MIL-HDBK-263
chip diode "sawn on foil"
photodiode CIE eye response
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Untitled
Abstract: No abstract text available
Text: T1610P Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 2.97 x 2.97 x 0.28 • Wafer diameter (in mm): 100 • Radiant sensitive area (in mm2): 7.7 • High photo sensitivity
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T1610P
2002/95/EC
18-Jul-08
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FVOV6870
Abstract: MIL-HDBK-263 PIN photodiode chip photodiode die WAFER
Text: T1610P Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 2.97 x 2.97 x 0.28 • Wafer diameter (in mm): 100 • Radiant sensitive area (in mm2): 7.7 • High photo sensitivity
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T1610P
T1610P
2002/95/EC
2002/96/EC
18-Jul-08
FVOV6870
MIL-HDBK-263
PIN photodiode chip
photodiode die WAFER
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PIN-Photodiode-Array
Abstract: EMCORE photodiode photodiode die WAFER PHOTODIODE 4 CHANNEL ARRAY 1055 GaAs photodiode Emcore PIN photodiode crosstalk
Text: 1 x 4 GaAs PIN Photodiode Array preliminary information Product Description EMCORE’s 4 channel Gallium Arsenide (GaAs) PIN photodiode array is designed for multimode fiber applications. Utilizing EMCORE’s own state-of-the-art MOCVD wafer foundry and device fabrication facility guarantees a reliable high
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PIN-Photodiode-Array
EMCORE photodiode
photodiode die WAFER
PHOTODIODE 4 CHANNEL ARRAY
1055
GaAs photodiode Emcore
PIN photodiode crosstalk
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Untitled
Abstract: No abstract text available
Text: T1610P Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 2.97 x 2.97 x 0.28 • Wafer diameter (in mm): 100 • Radiant sensitive area (in mm2): 7.7 • High photo sensitivity
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T1610P
2002/95/EC
2002/96/EC
2002/95/EC.
2011/65/EU.
JS709A
02-Oct-12
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emcore
Abstract: PHOTODIODE 4 CHANNEL ARRAY EMCORE photodiode GaAs photodiode Emcore photodiode die WAFER 1055 EMCORE photodiode array
Text: 1 x 4 GaAs PIN Photodiode Array Product Description EMCORE’s 4 channel Gallium Arsenide GaAs PIN photodiode array is designed for multimode fiber applications. Utilizing EMCORE’s own state-of-the-art MOCVD wafer foundry and device fabrication facility guarantees a reliable high
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emcore
PHOTODIODE 4 CHANNEL ARRAY
EMCORE photodiode
GaAs photodiode Emcore
photodiode die WAFER
1055
EMCORE photodiode array
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Untitled
Abstract: No abstract text available
Text: T1610P Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 2.97 x 2.97 x 0.28 • Wafer diameter (in mm): 100 • Radiant sensitive area (in mm2): 7.7 • High photo sensitivity
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T1610P
2002/95/EC
2002/96/EC
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
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FVOV6870
Abstract: MIL-HDBK-263
Text: T1610P Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 2.97 x 2.97 x 0.28 • Wafer diameter (in mm): 100 • Radiant sensitive area (in mm2): 7.7 • High photo sensitivity
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T1610P
2002/95/EC
2002/96/EC
11-Mar-11
FVOV6870
MIL-HDBK-263
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photodiode die WAFER
Abstract: GaAs photodiode Emcore PHOTODIODE 4 CHANNEL ARRAY emcore EMCORE photodiode array 50 um photodiode 1055 Photodiode Array
Text: 1 x 4 GaAs PIN Photodiode Array Product Description EMCORE’s 4 channel Gallium Arsenide GaAs PIN photodiode array is designed for multimode fiber applications. Utilizing EMCORE’s own state-of-the-art MOCVD wafer foundry and device fabrication facility guarantees a reliable high
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photodiode die WAFER
GaAs photodiode Emcore
PHOTODIODE 4 CHANNEL ARRAY
emcore
EMCORE photodiode array
50 um photodiode
1055
Photodiode Array
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02009-DSH-001-D
Abstract: M02009 MC2009 photodiode preamplifier AGC
Text: M02009 Pin Pre-amplifier with AGC for 3.3V Fiber Optic Applications to 622 Mbps The MC2009 is a low-noise, transimpedance amplifier with AGC, manufactured in low-cost CMOS. Its wide dynamic range, differential output and high PIN bias make it well suited for telecommunications, especially OC-12/STM-4.
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MC2009
OC-12/STM-4.
MC2044C
02009-DSH-001-D
02009-DSH-001-D
M02009
photodiode preamplifier AGC
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M02009
Abstract: photodiode preamplifier AGC M2009DIE M2009DIEW MC2009 photodiode die WAFER
Text: M02009 Pin Pre-amplifier with AGC for 3.3V Fiber Optic Applications to 622 Mbps Data Sheet 02009-DSH-001-C 6/03 Information provided in this Data Sheet is subject to change without notice. Mindspeed Technologies , Inc, Proprietary and Confidential M02009
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photodiode preamplifier AGC
M2009DIE
M2009DIEW
MC2009
photodiode die WAFER
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M02020-22
Abstract: photodiode die WAFER M02020 TIA AGC application note 0201X-PBD-002 photodiode esd sensitivity
Text: M02020 4 Gbps CMOS TIA with AGC The M02020 is a 4 Gbps TIA achieving a wide input dynamic range to support different transmission distance requirements. Input overload of 2 mAPP is provided to support short-haul fiber optic systems and input sensitivity of
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02020-DSH-001-F
M02020-22
photodiode die WAFER
TIA AGC application note
0201X-PBD-002
photodiode esd sensitivity
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Philips 787 receiver
Abstract: CGY2110CU OC192 STM-64 philips receiver 787
Text: INTEGRATED CIRCUITS DATA SHEET CGY2110CU 10 Gbits/s transimpedance amplifier Preliminary specification File under Integrated Circuits, IC19 2001 Dec 07 Philips Semiconductors Preliminary specification 10 Gbits/s transimpedance amplifier CGY2110CU FEATURES
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CGY2110CU
SCA73
403510/01/pp20
Philips 787 receiver
OC192
STM-64
philips receiver 787
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700 MHZ Tower Mounted Amplifiers
Abstract: MC2007
Text: MC2007-3 3.3 V PIN Pre-Amplifier with AGC for Applications to 200 Mbps The MC2007-3 is a low-noise, transimpedance amplifier with AGC, manufactured in an advanced, low-cost, submicron CMOS process. Its wide dynamic range, differential output and high PIN bias make it well suited to high-performance telecommunications, especially OC-3/STM-1. However, due to its low cost, the MC2007-3 also meets the
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MC2045
02007-DSH-002-C
700 MHZ Tower Mounted Amplifiers
MC2007
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4335TA
Abstract: photodiode amplifier 7.5 ghz inphi TIA inphi pin Photodiode 2 GHz circuit inphi TIA 10 pin photodiode 10 ghz OC-768 STM-256 43Gbps
Text: 4335TA 43 Gbps Transimpedance Amplifier with Internal DCA Feedback Loop Data Sheet Applications • • • SONET OC-768 and SDH STM-256 equipment Short, intermediate, and long haul optical receiver modules Broadband ATE Features • • • • • • Supports data rates up to 43 Gbps
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OC-768
STM-256
4335TA
photodiode amplifier 7.5 ghz
inphi TIA
inphi
pin Photodiode 2 GHz circuit
inphi TIA 10
pin photodiode 10 ghz
43Gbps
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AC DC supplies MEAN WELL diagrams
Abstract: TIA AGC application note MC2007
Text: Revision Information This document contains information that is subject to change without notice. Contact Technical Publications for latest revision information. MC2007-3 3.3 V PIN Pre-Amplifier with AGC for Applications to 200 Mbps The MC2007-3 is a low-noise, transimpedance amplifier with AGC, manufactured in an advanced, low-cost, submicron CMOS process. Its wide dynamic range, differential output and high PIN bias make it well suited to highperformance telecommunications, especially OC-3/STM-1. However, due to its low cost, the MC2007-3 also meets
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MC2007-3
02007-DSH-002-D
AC DC supplies MEAN WELL diagrams
TIA AGC application note
MC2007
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02014-DSH-001-C
Abstract: MINDSPEED M02015 Mindspeed Technologies 266 dsh TIA AGC application note M02015
Text: M02014 CMOS Transimpedance Amplifier with AGC for Fiber Optic Networks up to 2.5 Gbps The M02014 is a CMOS transimpedance amplifier with AGC. The AGC gives a wide dynamic range of 32 dB. The high transimpedance gain of 11 kΩ ensures good sensitivity. For optimum system performance, the M02014 die should be mounted with a photodetector inside a lensed
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M02014
02014-DSH-001-C
02014-DSH-001-C
MINDSPEED M02015
Mindspeed Technologies
266 dsh
TIA AGC application note
M02015
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photodiode die WAFER
Abstract: TIA AGC application note
Text: Preliminary Information This document contains information on a new product. The parametric information, although not fully characterized, is the result of testing initial devices. M02011 CMOS Transimpedance Amplifier with AGC for Fiber Optic Networks up to 622 Mbps
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02014-DSH-001-A
02011-DSH-001-B
photodiode die WAFER
TIA AGC application note
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Untitled
Abstract: No abstract text available
Text: PHY1097-03 A Maxim Integrated Products Brand 2.5Gbps High Sensitivity Transimpedance Amplifier Features Description • • • • -29dBm Sensitivity Up to 2.5Gbps NRZ data rates 150nA rms typical input referred noise Automatic gain control of output over full input
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-29dBm
150nA
PHY1097
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02007-DSH-002-E
Abstract: M02095 MC2007 TIA AGC application note MC2045
Text: MC2007-3 3.3 V PIN Pre-Amplifier with AGC for Applications to 200 Mbps The MC2007-3 is a low-noise, transimpedance amplifier with AGC, manufactured in an advanced, low-cost, submicron CMOS process. Its wide dynamic range, differential output and high PIN bias make it well suited to highperformance telecommunications, especially OC-3/STM-1. However, due to its low cost, the MC2007-3 also meets
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MC2045
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02007-DSH-002-E
MC2007
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