G8941
Abstract: G8941-01 G8941-02 G8941-03
Text: PHOTODIODE InGaAs PIN photodiode G8941 series Sub-mount type photodiode for LD monitor Features Applications l Active area l LD monitor G8941-01: φ1 mm G8941-02: φ0.5 mm G8941-03: φ0.3 mm l Miniature package: 2 x 2 × 1 mm l Precise chip position tolerance: ±0.075 mm
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G8941
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G8941-03:
G8941-01
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G8941
Abstract: G8941-01 G8941-02 G8941-03
Text: PHOTODIODE InGaAs PIN photodiode G8941 series Sub-mount type photodiode for LD monitor Features Applications l Active area l LD monitor G8941-01: φ1 mm G8941-02: φ0.5 mm G8941-03: φ0.3 mm l Miniature package: 2 x 2 × 1 mm l Precise chip position tolerance: ±0.075 mm
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G8941
G8941-01:
G8941-02:
G8941-03:
G8941-01
G8941-02
G8941-03
G8941-01
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G8941-03
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE InGaAs PIN photodiode G8941 series Sub-mount type photodiode for LD monitor Features Applications l Active area l LD monitor G8941-01: φ1 mm G8941-02: φ0.5 mm G8941-03: φ0.3 mm l Miniature package: 2 x 2 × 1 mm l Precise chip position tolerance: ±0.075 mm
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G8941
G8941-01:
G8941-02:
G8941-03:
G8941-01
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G8941-03
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE InGaAs PIN photodiode G8941 series Sub-mount type photodiode for LD monitor Features Applications l Active area l LD monitor G8941-01: φ1 mm G8941-02: φ0.5 mm G8941-03: φ0.3 mm l Miniature package: 2 x 2 × 1 mm l Precise chip position tolerance: ±0.075 mm
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G8941
G8941-01:
G8941-02:
G8941-03:
G8941-01
G8941-02
G8941-03
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Untitled
Abstract: No abstract text available
Text: PHOTONIC High Speed Silicon Photodiode, Photoconductive chip on submount Type PDB-C116A DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] METALIZATION THIS SIDE C L .040 [1.02] .060 [1.52] PD I CL .030 [0.76] ANODE METALIZATION CATHODE METALIZATION PHOTODIODE .080 [2.03]
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PDB-C116A
PDB-C116A
100-PDB-C116A
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Untitled
Abstract: No abstract text available
Text: PHOTONIC High Speed Silicon Photodiode, Photoconductive chip on submount Type PDB-C116A DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] .060 [1.52] PD CL .030 [0.76] I METALIZATION THIS SIDE C L .040 [1.02] ANODE METALIZATION CATHODE METALIZATION PHOTODIODE .080 [2.03]
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PDB-C116A
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Photodiode cost sheet
Abstract: die-attach cl 1100 optical fiber detector photoconductive Photodiode submount submount PD submount
Text: PHOTONIC High Speed Silicon Photodiode, Photoconductive chip on submount Type PDB-C116 DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] METALIZATION THIS SIDE C L .040 [1.02] .060 [1.52] PD I CL .030 [0.76] NOTE: PHOTODIODE CHIP TO BE EUTECTICALLY DIE ATTACHED TO SUBMOUNT CERAMIC
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PDB-C116
PDB-C116
100-PDB-C116
Photodiode cost sheet
die-attach
cl 1100
optical fiber detector photoconductive
Photodiode submount
submount
PD submount
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photodiode demodulation
Abstract: gold metal detectors gold detectors circuit bond wire gold fiber optic detector fibre optic laser ceramic package PDB-C122
Text: PHOTONIC Silicon Photodiode, Blue Enhanced Photoconductive Monitor Photodiode Type PDB-C122 DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] GOLD METAL THIS SIDE CL .040 [1.02] ACTIVE AREA CL .030 [0.76] .060 [1.52] ANODE METALIZATION TOP VIEW CATHODE METALIZATION
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PDB-C122
PDB-C122
100-PDB-C122
photodiode demodulation
gold metal detectors
gold detectors circuit
bond wire gold
fiber optic detector
fibre optic laser
ceramic package
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Abstract: No abstract text available
Text: PHOTONIC Silicon Photodiode, Blue Enhanced Photoconductive Monitor Photodiode Type PDB-C122 DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] GOLD METAL THIS SIDE CL .040 [1.02] ACTIVE AREA C L .030 [0.76] .060 [1.52] ANODE METALIZATION TOP VIEW CATHODE METALIZATION
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PDB-C122
PDB-C122
100-PDB-C122
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SAE230VX
Abstract: SAE500VX SAE500VS SAE500 avalanche photodiode
Text: Silicon Avalanche Photodiode SAE-Series Red-Enhanced DESCRIPTION The SAE500VS epitaxial avalanche photodiode is a general purpose APD with high responsivity and extremely fast rise and fall times through out the 400 to 1000 nm wavelength range. The peak responsivity
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SAE500VS
SAE500VX
SAE230VX
SAE500
avalanche photodiode
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inGaAs photodiode 1550
Abstract: No abstract text available
Text: InGaAs Avalanche Photodiode IAE-Series DESCRIPTION The IAE 200 avalanche photodiode is the largest commercial available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1650 nm wavelength range. The peak responsivity at
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Abstract: No abstract text available
Text: InGaAs Avalanche Photodiode IAE-Series DESCRIPTION The IAE-series avalanche photodiode is the largest commercial available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1650 nm wavelength range. The peak responsivity at
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InGaas PIN photodiode, 1550 NEP
Abstract: InGaAs Photodiode 1550nm photodiode 1550nm nep InGaas PIN photodiode, 1550 sensitivity InGaas APD photodiode, 1550 sensitivity InGaAs APD photodiode 1550 pin photodiode 2 GHz 1550 InGaAs Avalanche Photodiode IAG-Series avalanche 1550nm photodiode 5 Ghz IAG 080
Text: InGaAs Avalanche Photodiode IAG-Series DESCRIPTION The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at
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InGaas PIN photodiode chip
Abstract: No abstract text available
Text: Pin Photodiode KeyFeatures InGaAs Material Planar Zn Diffused Structure 70 Micron in Diameter Active Area Front-illuminated Photodiode High Responsivity 0.85 A/W on a Wide Range (1300nm to 1600nm Low Dark Current Applications 2.5 Gb/s Receiver Modules Telecom
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1300nm
1600nm)
1600nm
InGaas PIN photodiode chip
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Untitled
Abstract: No abstract text available
Text: InGaAs Avalanche Photodiode IAE-Series DESCRIPTION The IAE-series avalanche photodiode is the largest commercial available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1650 nm wavelength range. The peak responsivity at
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IAG 080
Abstract: No abstract text available
Text: InGaAs Avalanche Photodiode IAG-Series DESCRIPTION The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at
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InGaas PIN photodiode chip
Abstract: datasheets for photodiode chips
Text: Optical Monitoring Photodiode Chip KIP-M25-1 Description KIP-M25-1 is InGaAs PIN Photodiode chip with □250 um active square. It is recommended for optical data communication and power monitoring. Features Front illuminated planar PIN-PD Low capacitance and low dark current
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KIP-M25-1
KIP-M25-1
InGaas PIN photodiode chip
datasheets for photodiode chips
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1500-nm
Abstract: No abstract text available
Text: Large Area InGaAs p-i-n Photodiode Sheet 1 of 3 35PD500-S The 35PD500-S, an InGaAs photodiode with a 500µm-diameter photosensitive region mounted on a metallized ceramic substrate, is a versatile device with applications in high sensitivity instrumentation, laser
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35PD500-S
35PD500-S,
1500-nm
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InGaas PIN photodiode chip
Abstract: for photodiode chips KIP-107-1 pin InGaAs chip 1071 cp
Text: 1.25G InGaAs PIN Photodiode Chip KIP-107-1 Description KIP-107-1 is InGaAs PIN Photodiode chip with Ø75um active diameter. It is recommended for optical data communication with high sensitivity. Features Front illuminated planar PIN-PD Low capacitance and low dark current
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KIP-107-1
KIP-107-1
-40hange
250x250
InGaas PIN photodiode chip
for photodiode chips
pin InGaAs chip
1071 cp
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InGaAs pin photodiode 1Ghz
Abstract: No abstract text available
Text: High Speed InGaAs p-i-n Photodiode Sheet 1 of 3 13PD100-S The 13PD100-S, an InGaAs photodiode with a 100µm-diameter photosensitive region and mounted on a metallized ceramic substrate, is the largest standard device enabling a 1GHz frequency cutoff. Planar
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13PD100-S
13PD100-S,
InGaAs pin photodiode 1Ghz
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Untitled
Abstract: No abstract text available
Text: High Speed InGaAs p-i-n Photodiode 13PD55-C The 13PD55-C, an InGaAs photodiode with a 55µm-diameter photosensitive region, is intended for high speed and low noise applications in telecommunication and data communication systems. Planar semiconductor design and dielectric passivation provide very
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13PD55-C
13PD55-C,
1300nm
-40oC
250oC
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KIP-M1M
Abstract: InGaas PIN photodiode chip
Text: Optical Monitoring Photodiode Chip for KIP-MxM KIP-MxM Description KIP-MxM-1 is InGaAs PIN Photodiode chip with BIG size active diameter Ø1.0mm,Ø2.0mm,Ø3.0mm . It is recommended for Laser diode life test and optical power monitoring. Features Front illuminated planar PIN-PD
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Abstract: No abstract text available
Text: High Performance InGaAs p-i-n Photodiode Sheet 1 of 3 13PD150-S The 13PD150-S, an InGaAs photodiode with a 150µm-diameter photosensitive region and mounted on a metallized ceramic substrate, is intended for moderate-to-high speed applications. Efficiency coupling to
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13PD150-S
13PD150-S,
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InGaas PIN photodiode chip
Abstract: for photodiode chips KIP-205-1
Text: 2.5 Gbps InGaAs PIN Photodiode Chip KIP-205-1 Description KIP-205-1 is InGaAs PIN Photodiode chip with Ø50 um active diameter. It is recommended for optical data communication with high sensitivity. Features Front illuminated planar PIN-PD Low capacitance and low dark current
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KIP-205-1
KIP-205-1
250x250
InGaas PIN photodiode chip
for photodiode chips
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