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    PHP18N20E Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PHP18N20E Philips Semiconductors PowerMOS Transistor Original PDF
    PHP18N20E Toshiba Power MOSFETs Cross Reference Guide Original PDF

    PHP18N20E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor C458

    Abstract: op027 SAA4849PS computer smps circuit diagram saa4849 saa4848ps philips 107 crt monitor vga connector crt monitor circuit diagram FC260 circuit diagram electronic choke for tube light
    Text: APPLICATION NOTE 17 inch 70kHz CRT monitor demo set featuring SAA4848/SAA4849 AN10280_1 Philips Semiconductors TP97035.3/W97 TRAD Philips Semiconductors 17 inch 70kHz CRT monitor demo set featuring SAA4848/SAA4849 Application Note AN10280 1 Purchase of Philips I2C components conveys a


    Original     		PDF 70kHz SAA4848/SAA4849 AN10280 TP97035 3/W97 29-aug-2000 AN00032 transistor C458 op027 SAA4849PS computer smps circuit diagram saa4849 saa4848ps philips 107 crt monitor vga connector crt monitor circuit diagram FC260 circuit diagram electronic choke for tube light

    PHP18N20E

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance


    Original     		PDF O220AB PHP18N20E PHP18N20E

    BUK7506-30

    Abstract: BUK7606-30 PHP18N20E
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device


    Original     		PDF OT404 BUK7606-30 BUK7506-30 BUK7606-30 PHP18N20E

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    AT2097

    Abstract: Z201 9j TR343 LM2435T OC200 TEA1507 Philips PR02 TR353 R300 equivalent TR205
    Text: $33/,&$7,21 127 (&20RQLWRU $1 3KLOLSV 6HPLFRQGXFWRUV 73: 3KLOLSV 6HPLFRQGXFWRUV $SSOLFDWLRQ 1RWH $1 (&20RQLWRU 3XUFKDVH RI 3KLOLSV ,& FRPSRQHQWV FRQYH\V D OLFHQVH XQGHU WKH ,& SDWHQW WR XVH WKH FRPSRQHQWV LQ WKH ,& V\VWHP SURYLGHG WKH V\VWHP FRQIRUPV WR WKH


    Original     		PDF 20RQLWRU AT2097 Z201 9j TR343 LM2435T OC200 TEA1507 Philips PR02 TR353 R300 equivalent TR205

    BUK7506-30

    Abstract: PHP18N20E
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance


    Original     		PDF O220AB BUK7506-30 175on BUK7506-30 PHP18N20E

    Philips tea1090

    Abstract: tea1090 tea1402 pcf2705p philips TEA1090T SAA7321GP TDA2579A LMT 393 N TDA3653bq TEA5713
    Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-41 DATED JUNE 30, 1999 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION PHILIPS LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODES COMMENTS


    Original     		PDF DN-41 LO9585/WD LO9585 LO9700 OQ8845T/K3 OQ8868HP/K6 QFP47) X2G-BUK5R3-100B Philips tea1090 tea1090 tea1402 pcf2705p philips TEA1090T SAA7321GP TDA2579A LMT 393 N TDA3653bq TEA5713

    rd1004

    Abstract: BUK7506-30 PHB130N03T PHP18N20E
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device


    Original     		PDF OT404 PHB130N03T rd1004 BUK7506-30 PHB130N03T PHP18N20E

    BUK7506-30

    Abstract: PHP130N03T PHP18N20E 1E0420
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance


    Original     		PDF O220AB PHP130N03T BUK7506-30 PHP130N03T PHP18N20E 1E0420

    pj 72 diode

    Abstract: pj 67 diode W1872 diode pj 72
    Text: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION PHP18N20E QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and


    OCR Scan     		PDF PHP18N20E T0220AB pj 72 diode pj 67 diode W1872 diode pj 72

    buk7530-55

    Abstract: mosfet-n SOT166 TOPFET buk7530
    Text: SELECTION GUIDE Page TOPFETs 14 PowerMOS Transistors 16 Insulated Gate Bipolar Transistors 23 Philips Semiconductors TOPFETs VDS Selection Guide @ID FUSION O) (V) (A) Id w Pd (W) TYPE NUMBER TECHNOLOGY ENVELOPE 50 0.028 25 50 125 BUK106-50L TOPFET SOT263


    OCR Scan     		PDF 56-800A BUK446-800A BUK456-800B BUK446-800B BUK454-800A BUK444-800A BUK454-800B BUK444-800B BUK456-1000B BUK446-1000B buk7530-55 mosfet-n SOT166 TOPFET buk7530

    T0-220AB

    Abstract: PHILIPS MOSFET igbt mosfet switch BUK866 4001z
    Text: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Types added to the range since the last issue of data handbook SC13 1995 are shown in bold print, TYPE NUMBER TECHNOLOGY PACKAGE PAGE BUK100-50DL TOPFET T0220AB 38 BUK100-50GL TOPFET


    OCR Scan     		PDF BUK100-50DL BUK100-50GL BUK100-50GS BUK101-50DL BUK101-50GL BUK101-50GS BUK102-50DL BUK102-50GL BUK102-50GS BUK104-50L T0-220AB PHILIPS MOSFET igbt mosfet switch BUK866 4001z

    BUK444-200

    Abstract: 100a mosfet Philips Semiconductors Selection Guide BUK454-60H BUK108-50DL BUK102-50GL BUk2 BUK44 BUK9630-55 BUK9570-55
    Text: Philips Semiconductors TOPFETs Selection Guide VDs Rdsion lD Id V) (fl) (A) (A) Pd (W) TYPE NUMBER TECHNOLOGY ENVELOPE 50 0.028 25 50 125 BUK106-50L TOPFET 50 0.028 25 50 125 BUK106-50LP TOPFET SOT263-O1 50 0.028 25 50 125 BUK116-50L TOPFET SOT426 50


    OCR Scan     		PDF 7-800B BUK446-800B BUK454-800A BUK444-800A BUK454-800B BUK444-800B BUK456-1OOOB BUK446-1000B T0220AB OT186 BUK444-200 100a mosfet Philips Semiconductors Selection Guide BUK454-60H BUK108-50DL BUK102-50GL BUk2 BUK44 BUK9630-55 BUK9570-55

    837 mosfet

    Abstract: 912 MOSFET T0-220AB PHILIPS MOSFET igbt BUK108-50DL 50SP 200b mosfet MOSFET 1053 mosfet handbook
    Text: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Types added to the range since the last issue of data handbook SC13 1995 are shown in bold print. TYPE NUMBER TECHNOLOGY PACKAGE BUK100-50DL TOPFET T0220AB PAGE 38 BUK100-50GL TOPFET


    OCR Scan     		PDF BUK100-50DL BUK100-50GL BUK100-50GS BUK101-50DL BUK101-50GL BUK101-50GS BUK102-50DL BUK102-50GL BUK102-50GS BUK104-50L 837 mosfet 912 MOSFET T0-220AB PHILIPS MOSFET igbt BUK108-50DL 50SP 200b mosfet MOSFET 1053 mosfet handbook

    transistor 1564

    Abstract: Transistor B 1566
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode fietd-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance


    OCR Scan     		PDF PHP18N20E T0220AB transistor 1564 Transistor B 1566

    PHC2300

    Abstract: BSH202 200B PHC20306 PHP45N03LT php18n20e BST100 PHT11N06LT PHN203 PHB50N03LT
    Text: Philips Semiconductors PowerMOS Transistors TYPE NUMBER PAGE Index TYPE NUMBER 2N7000 48 BSP110 2N7002 54 BSP120 PAGE TYPE NUMBER PAGE 203 BST84 358 208 BST86 364 BS107 60 BSP121 213 BUK100-50DL 385 BS107A 66 BSP122 219 BUK100-50GL 393 BS108 70 BSP126 221


    OCR Scan     		PDF 2N7000 2N7002 BS107 BS107A BS108 BS170 BS250 BSH101 BSH102 BSH103 PHC2300 BSH202 200B PHC20306 PHP45N03LT php18n20e BST100 PHT11N06LT PHN203 PHB50N03LT

    ld18a

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance


    OCR Scan     		PDF PHP18N20E T0220AB ld18a