Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BUK44 Search Results

    SF Impression Pixel

    BUK44 Price and Stock

    Philips Semiconductors BUK444-600B

    TRANSISTOR,MOSFET,N-CHANNEL,600V V(BR)DSS,1.5A I(D),SOT-186
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components BUK444-600B 9
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Philips Semiconductors BUK445600B

    POWERMOS TRANSISTOR MOSFET N Power Field-Effect Transistor, 2.2A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA BUK445600B 442
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    BUK44 Datasheets (227)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUK441-100A Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUK441-100A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK441-100A Philips Semiconductors PowerMOS transistor Scan PDF
    BUK441-100A Philips Semiconductors PowerMOS transistor Scan PDF
    BUK441-100B Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUK441-100B Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK441-100B Philips Semiconductors PowerMOS transistor Scan PDF
    BUK441-100B Philips Semiconductors PowerMOS transistor Scan PDF
    BUK441-60A Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUK441-60A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK441-60A Philips Semiconductors PowerMOS transistor Scan PDF
    BUK441-60B Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUK441-60B Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK441-60B Philips Semiconductors PowerMOS transistor Scan PDF
    BUK442-100 Philips Semiconductors Powermos Transistor Original PDF
    BUK442-100A Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUK442-100A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK442-100A Philips Semiconductors PowerMOS transistor Scan PDF
    BUK442-100A Philips Semiconductors PowerMOS transistor Scan PDF
    BUK442-100B Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    ...

    BUK44 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BUK445-500B

    Abstract: No abstract text available
    Text: PHILIPS INTERNATIONAL b5E P m 711002b DDbMDOb BTb • PHIN Product Specification Philips Semiconductors BUK445-500B PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		711062b BUK445-500B -SOT186 BUK445-500B PDF

    D4MB

    Abstract: No abstract text available
    Text: PHILIPS INTERNATIONAL Data sheet status Preliminary specification date of issue March 1991 Sfc.E D • 711Qfl2b □ D4 Mb bti 17T « P H I N BUK 476-1000A/B PowerMOS transistor Replaces BUK446-1000A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


    OCR Scan     		711Qfl2b 76-1000A/B BUK446-1000A/B BUK476 -1000A -1000B -SOT186A T-39-09 BUK476-1000A/B 7110fi2b D4MB PDF

    rm3 transistor

    Abstract: BUK478
    Text: Philips Com ponents Data sheet status Preliminary specification date of issue March 1991 BUK 476-800A/B PowerMOS transistor Replaces BUK446-800A/B PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.


    OCR Scan     		76-800A/B BUK446-800A/B 7110flSb -800A -800B BUK476 BUK476-800A/B 7110f rm3 transistor BUK478 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE D bb53R31 0030540 TOO • APX Product Specification Philips Semiconductors BUK444-600B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic full-pack envelope, he device is intended for use in


    OCR Scan     		bb53R31 BUK444-600B PINNING-SOT186 bb53T31 0D305l PDF

    DD 127 D TRANSISTOR

    Abstract: BUK443-50B BUK443 BUK443-50A TRANSISTOR K 135 J 50
    Text: N AMER PHIL IP S/D ISCRETE 2SE D ^53^31 G0E0345 2 PowerMOS transistor BUK443-50A BUK443-50B T GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		G0E0345 BUK443-50A BUK443-50B BUK443 ID/100 DD 127 D TRANSISTOR BUK443-50B TRANSISTOR K 135 J 50 PDF

    BUK446

    Abstract: BUK446-800B BUK446-800A DD305 k446
    Text: N AMER P H ILIP S /D IS C R E TE b^E » bbS3^31 DDBOSflO b=n • APX product Specification Philips semiconductors BUK446-800A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.


    OCR Scan     		BUK446-800A/B -SOT186 BUK446 -800A -800B K446-800A/B BUK446-800B BUK446-800A DD305 k446 PDF

    100-P

    Abstract: BUK446 BUK446-800A BUK446-800B transistor SE 431 ha 431 transistor
    Text: PHI LI P S I N T E R N A T I O N A L bSE D Kl 7 1 1 0 Ô S b Ü O b M Ol b E4S H P H I N Philips Semiconductors Product Specification BUK446-800A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.


    OCR Scan     		711002b BUK446-800A/B -SOT186 BUK446 -800A -800B 7110a2b 100-P BUK446-800A BUK446-800B transistor SE 431 ha 431 transistor PDF

    BUK416-100BE

    Abstract: 200B BUK437-500B BUK436-200A BUK416-200AE BUK416-100AE
    Text: Power Devices Power MOSFET Transistors General Purpose in order of Voltage/Ros on (corn.) V „s MAX (V) Type No. Package Outline Iq max Ptot max (W> Rq S ON max (A) ( ft) 60 60 60 60 60 BUK445-60A BUK436-60B BUK456-60B BUK456-60A BUK436-60A SO T-186* SOT-93


    OCR Scan     		BUK445-60A BUK436-60B BUK456-60B BUK456-60A BUK436-60A BUK451-100B BUK441-100B BUK451-100A BUK441-100A BUK452-100B BUK416-100BE 200B BUK437-500B BUK436-200A BUK416-200AE BUK416-100AE PDF

    Untitled

    Abstract: No abstract text available
    Text: BUK444-500A Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)30 I(D) Max. (A)2.1 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)25 Minimum Operating Temp (øC)


    Original     		BUK444-500A PDF

    BUK441

    Abstract: BUK441-60A BUK441-60B 3909
    Text: T Ï2 & - 0 ? Philips Components Data sheet status Preliminary specification d ate of issue March 1991 BUK441-60A/B PowerMOS transistor PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancem ent mode field-effect pow er transistor in a plastic full-pack envelope.


    OCR Scan     		PINNING-SOT186 BUK441-60A/B 711D0Eb BUK441 711002b. 00MMSb3 BUK441-60A BUK441-60B 3909 PDF

    SCR 1989

    Abstract: No abstract text available
    Text: N AUER PH IL IPS /DISCR ETE bbS3131 D02042S 0 2SE D PowerMOS transistor BUK446-1000A BUK446-1000B T -31-d7 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		bbS3131 D02042S BUK446-1000A BUK446-1000B -31-d7 BUK446 -1000A -1000B SCR 1989 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHI LIP S/ DIS CR ETE ^ 5 3 7 3 1 D020400 h 5SE D BUK445-400A BUK445-400B PowerMOS transistor r - 37 - O ? GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		D020400 BUK445-400A BUK445-400B BUK445 -400A -400B PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bRE D bbS3R3i 0030503 Rob Product Specification Philips Sem iconductors BUK441-100A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		BUK441-100A/B OT186 BUK441 -100A -100B PDF

    Untitled

    Abstract: No abstract text available
    Text: N AUER PH ILI PS/ DIS CR ETE 5SE D Lfa53131 Q030370 1 BUK444-500A BUK444-500B PowerMOS transistor '- 3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		Lfa53131 Q030370 BUK444-500A BUK444-500B BUK444 -500A -500B PDF

    1B09 transistor

    Abstract: 100-P BUK444-600B 1B09
    Text: P H IL IP S IN T E R N A T IO N A L b 5 ED H 7 1 1 0 0 2 b O G b B 'ìT bT b O«PHIN Product Specification Philips Semiconductors BUK444-600B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic full-pack envelope.


    OCR Scan     		BUK444-600B OT186 1B09 transistor 100-P 1B09 PDF

    BUK444

    Abstract: BUK444-500A BUK444-500B
    Text: N AMER P H I L I P S / D I S C R E T E asE kb53T3 1 GDSG37G 1 j> BUK444-500A BUK444-500B PowerMOS transistor T - 3 7 - 0 9 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		kb53T3i Goaa37a BUK444-500A BUK444-500B BUK444 -500A -500B PDF

    BUK441

    Abstract: BUK441-60A BUK441-60B
    Text: -7 ^ 3 9 -O Philips Com ponents Data sheet status Prelim inary specification date of issue March 1991 BUK441-60A/B PowerMOS transistor PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancem ent mode field-effect pow er transistor in a plastic full-pack envelope.


    OCR Scan     		PINNING-SOT186 BUK441-60A/B 711002b BUK441 7110fl2fc. 00MMSb3 BUK441-60A BUK441-60B PDF

    BUK442-50A

    Abstract: BUK442 BUK442-50B
    Text: N AMER P H I L I P S / D I S C R E T E ESE D • ^53131 0020330 0 ■ PowerMOS transistor BUK442-50A BUK442-50B T - 3 < ? - o <7 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.


    OCR Scan     		BUK442-50A BUK442-50B BUK442 PDF

    BUK446

    Abstract: BUK446-1000A transistor k446 BUK446-1000B k446 diode t25 4 L0
    Text: N AMER PHILIPS/DISCRETE 2 SE D • bbS3131 Q02042S M PowerMOS transistor BUK446-1000A BUK446-1000B T - 3 7 - 0 ? GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		bbS3131 Q02042S BUK446-1000A BUK446-1000B T-37-Ã BUK446 -1000A -1000B transistor k446 k446 diode t25 4 L0 PDF

    BUK442

    Abstract: BUK442-60A BUK442-60B
    Text: N AMER P H I L I P S / D I S C R E T E 2SE D • btSBTBl 002033S T ■ PowerMOS transistor BUK442-60A BUK442-60B T~ 37-09 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		0DS033S BUK442-60A BUK442-60B BUK442 BUK442-60B PDF

    BUK445-600B

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bTE D • hbS3T31 003D575 Philips Semiconductors PowerMOS transistor PINNING -S O T 1 86 PIN BUK445-600B QUICK REFERENCE DATA SYMBOL PARAMETER < o Cl GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


    OCR Scan     		hbS3T31 BUK445-600B -SOT186 BUK445-600B PDF

    BUK445

    Abstract: K445 BUK445-500A BUK445-500B
    Text: N AMER PHILIPS/DISCRETE 2SE D • ^53=131 DOSOmO =1 ■ PowerMOS transistor BUK445-500A BUK445-500B T -2 1 -0 1 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		BUK445-500A BUK445-500B BUK445 -500A -500B K445 BUK445-500B PDF

    BUK445

    Abstract: BUK445-500A BUK445-500B IE-04
    Text: N AMER PHI LI PS /DIS CR ETE 2SE D • ^53131 0020410 =1 ■ BUK445-500A BUK445-500B PowerMOS transistor QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		BUK445-500A BUK445-500B BUK445 -500A -500B BUK445-500A BUK445-500B IE-04 PDF

    Untitled

    Abstract: No abstract text available
    Text: -7 - 3 9 - 0 9 Philips Components Data sheet status Preliminary specification date of issue March 1991 BUK 475-500B PowerMOS transistor Replaces BUK445-500A 'S MILIPS INrrRNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


    OCR Scan     		475-500B BUK445-500A PDF