PHB2N60E
Abstract: PHD2N60E PHP1N60 PHP2N60E
Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP2N60E, PHB2N60E, PHD2N60E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance
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PHP2N60E,
PHB2N60E,
PHD2N60E
PHP2N60E
O220AB)
PHB2N60E
PHD2N60E
PHP1N60
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PHD2N60E
Abstract: PHB2N60E PHP1N60 PHP2N60E
Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP2N60E, PHB2N60E, PHD2N60E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance
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PHP2N60E,
PHB2N60E,
PHD2N60E
PHP2N60E
O220AB)
PHB2N60E
PHD2N60E
PHP1N60
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PHP2N60E
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance
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O220AB
PHP2N60E
PHP2N60E
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YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509
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2N7000
2N7002
2SJ377
2SJ378
2SJ380
2SJ401
2SJ402
2SJ407
2SJ412
2SJ419
YTA630
MTW14P20
BSS125
MTAJ30N06HD
2SK2837 equivalent
SMU10P05
SMP60N06 replacement
STE180N10
RFH75N05E
IRFD620
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ph 4148 zener diode
Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS
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DN-40
74ABT126
74ABT2240
X3G-BZX84-C7V5
X3G-BZX84-C9V1
ph 4148 zener diode
philips zener diode ph 4148
pcf0700p
Zener Diode ph 4148
PCA1318P
ck2605
pcf0700p/051
philips Pca1318p
on4673
Zener Diode 4148
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philips semiconductors
Abstract: philips application information SMPS COMPONENT RECTIFIER DIODES PHILIPS smps philips code semiconductors replacement guide all semi-conductors replacement Philips discrete semiconductor philips
Text: Philips Semiconductors Power in Switch Mode Power Supplies Philips Semiconductors Power in SMPS • As one of the leading suppliers of semiconductor power components, Philips Semiconductors has an extremely broad range of discrete devices for virtually every SMPS
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PHX1N60A
Abstract: PHX2N60E
Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated PHX2N60E FEATURES SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Isolated package
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PHX2N60E
OT186A
PHX1N60A
PHX2N60E
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Philips TdA3619
Abstract: on4408 tda3619 on4827 TDA5247HT on4785 OF622 FAST RECOVERY DIODE ON4913 on4802 OQ9811T
Text: PRODUCT DISCONTINUATION DN43 NOTICE June 30, 2000 Exhibit A SEE DN43 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.
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PHP18NQ10T
Abstract: PHB27NQ10T BYC05B-600 PHB23NQ10T pbyr1045 BYV72EW200 Msd119 BYC08B-600 byv26 equivalent bridge rectifier 8341
Text: Philips Semiconductors Power in Switched Mode Power Supplies SOT 428 DPAK SOT 404 SOT 223 SOT 429 D 2-PAK 1999 TO247 M3D306 TO220AB SOD 59 TO220AC SOT 186A SOD 113 ISOLATED TO22OAB 2-PIN SOT 186A Philips Semiconductors Ð a worldwide company Argentina: see South America
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M3D306
O220AB
O220AC
O22OAB
30EX-150
BYQ30EX-200
BYV32EX-150
BYV42EX-150
BYV32EX-200
BYV42EX-200
PHP18NQ10T
PHB27NQ10T
BYC05B-600
PHB23NQ10T
pbyr1045
BYV72EW200
Msd119
BYC08B-600
byv26 equivalent
bridge rectifier 8341
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistors PHP2N60E, PHB2N60E, PHD2N60E Avalanche energy rated_ FEATURES • • • • • SYMBOL Repetitive Avalanche Rated Fast switching Stable off-state characteristics
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PHP2N60E,
PHB2N60E,
PHD2N60E
PHP2N60E
T0220ditions:
PHD2N60E
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P2N60e
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistors PHP2N60E, PHB2N60E, PHD2N60E Avalanche energy FEATURES • • • • • QUICK REFERENCE DATA SYMBOL Repetitive Avalanche Rated Fast switching
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PHP2N60E,
PHB2N60E,
PHD2N60E
PHP2N60E
T0220AB)
P2N60e
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buk7530-55
Abstract: mosfet-n SOT166 TOPFET buk7530
Text: SELECTION GUIDE Page TOPFETs 14 PowerMOS Transistors 16 Insulated Gate Bipolar Transistors 23 Philips Semiconductors TOPFETs VDS Selection Guide @ID FUSION O) (V) (A) Id w Pd (W) TYPE NUMBER TECHNOLOGY ENVELOPE 50 0.028 25 50 125 BUK106-50L TOPFET SOT263
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56-800A
BUK446-800A
BUK456-800B
BUK446-800B
BUK454-800A
BUK444-800A
BUK454-800B
BUK444-800B
BUK456-1000B
BUK446-1000B
buk7530-55
mosfet-n
SOT166
TOPFET
buk7530
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buk455
Abstract: BUK445-100A BUK444 50SP BUK854-500IS BUK854-500 BUK454
Text: Philips Semiconductors Replacement List REPLACED / WITHDRAWN TYPES The following type numbers were in the previous issue of this handbook, but are not in the current version: TYPE NUMBER BUK105-50L REPLACED BY REASON FOR DELETION see BUK104/106-50L BUK105-50LP
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BUK105-50L
BUK105-50LP
BUK105-50S
BUK105-50SP
BUK444-400B
BUK444-500B
BUK444-600B
BUK445-400B
BUK445-500B
BUK445-600B
buk455
BUK445-100A
BUK444
50SP
BUK854-500IS
BUK854-500
BUK454
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T0-220AB
Abstract: PHILIPS MOSFET igbt mosfet switch BUK866 4001z
Text: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Types added to the range since the last issue of data handbook SC13 1995 are shown in bold print, TYPE NUMBER TECHNOLOGY PACKAGE PAGE BUK100-50DL TOPFET T0220AB 38 BUK100-50GL TOPFET
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BUK100-50DL
BUK100-50GL
BUK100-50GS
BUK101-50DL
BUK101-50GL
BUK101-50GS
BUK102-50DL
BUK102-50GL
BUK102-50GS
BUK104-50L
T0-220AB
PHILIPS MOSFET igbt
mosfet switch
BUK866 4001z
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837 mosfet
Abstract: 912 MOSFET T0-220AB PHILIPS MOSFET igbt BUK108-50DL 50SP 200b mosfet MOSFET 1053 mosfet handbook
Text: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Types added to the range since the last issue of data handbook SC13 1995 are shown in bold print. TYPE NUMBER TECHNOLOGY PACKAGE BUK100-50DL TOPFET T0220AB PAGE 38 BUK100-50GL TOPFET
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BUK100-50DL
BUK100-50GL
BUK100-50GS
BUK101-50DL
BUK101-50GL
BUK101-50GS
BUK102-50DL
BUK102-50GL
BUK102-50GS
BUK104-50L
837 mosfet
912 MOSFET
T0-220AB
PHILIPS MOSFET igbt
BUK108-50DL
50SP
200b
mosfet
MOSFET 1053
mosfet handbook
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BUK445-100A
Abstract: BUK445-600B
Text: Philips Semiconductors Replacement List REPLACED / WITHDRAWN TYPES The following type numbers were in the previous issue of this handbook, but are not in the current version: TYPE NUMBER REPLACED BY BUK105-50L see BUK104/106-50L BUK105-50LP see BUK104/106-50LP
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BUK105-50L
BUK105-50LP
BUK105-50S
BUK105-50SP
BUK444-400B
BUK444-500B
BUK444-600B
BUK445-400B
BUK445-500B
BUK445-600B
BUK445-100A
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BS107 spice
Abstract: BS108 spice K9614 Philips Semiconductors Selection Guide BUK7535-55 K9514 PHD69N03LT bsh201 SFE 7.2 k75-10
Text: Philips Semiconductors PowerMOS Transistors Selection guide POWERMOS SELECTION GUIDE Vos V RoS(ori) (Ohm) @Id (A) tamax (A) Pûmax (W) TYPE NUMBER TECHNOLOGY PACKAGE PAGE 25 0.01 25 75 142 PHB87N03LT L2 TrenchMOS N SOT404 1656 25 0.01 25 75 142 PHP87N03LT
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PHB87N03LT
PHP87N03LT
PHB69N03LT
PHD69N03LT
PHP69N03LT
PHB55N03LT
PHD55N03LT
PHP55N03LT
PHB50N03LT
PHP50N03LT
BS107 spice
BS108 spice
K9614
Philips Semiconductors Selection Guide
BUK7535-55
K9514
bsh201
SFE 7.2
k75-10
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance
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PHP2N60E
T0220AB
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PHC2300
Abstract: BSH202 200B PHC20306 PHP45N03LT php18n20e BST100 PHT11N06LT PHN203 PHB50N03LT
Text: Philips Semiconductors PowerMOS Transistors TYPE NUMBER PAGE Index TYPE NUMBER 2N7000 48 BSP110 2N7002 54 BSP120 PAGE TYPE NUMBER PAGE 203 BST84 358 208 BST86 364 BS107 60 BSP121 213 BUK100-50DL 385 BS107A 66 BSP122 219 BUK100-50GL 393 BS108 70 BSP126 221
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2N7000
2N7002
BS107
BS107A
BS108
BS170
BS250
BSH101
BSH102
BSH103
PHC2300
BSH202
200B
PHC20306
PHP45N03LT
php18n20e
BST100
PHT11N06LT
PHN203
PHB50N03LT
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance
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PHP2N60E
T0220AB
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