PHP3N50
Abstract: PHP5N40
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling
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O220AB
PHP5N40
PHP3N50
PHP5N40
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transistor IRF730
Abstract: IRF730 PHP3N50 PHP3N60 PHP5N40
Text: Philips Semiconductors Product specification PowerMOS transistor Avalanche energy rated IRF730 FEATURES SYMBOL QUICK REFERENCE DATA • Repetitive Avalanche Rated • Fast switching • High thermal cycling performance • Low thermal resistance d VDSS = 400 V
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IRF730
O220AB)
IRF730
transistor IRF730
PHP3N50
PHP3N60
PHP5N40
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PHB7N40E
Abstract: PHP3N50 PHP3N60 PHP5N40 PHP7N40E
Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP7N40E, PHB7N40E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance
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PHP7N40E,
PHB7N40E
PHP7N40E
O220AB)
PHB7N40E
PHP3N50
PHP3N60
PHP5N40
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YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509
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2N7000
2N7002
2SJ377
2SJ378
2SJ380
2SJ401
2SJ402
2SJ407
2SJ412
2SJ419
YTA630
MTW14P20
BSS125
MTAJ30N06HD
2SK2837 equivalent
SMU10P05
SMP60N06 replacement
STE180N10
RFH75N05E
IRFD620
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ph 4148 zener diode
Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS
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DN-40
74ABT126
74ABT2240
X3G-BZX84-C7V5
X3G-BZX84-C9V1
ph 4148 zener diode
philips zener diode ph 4148
pcf0700p
Zener Diode ph 4148
PCA1318P
ck2605
pcf0700p/051
philips Pca1318p
on4673
Zener Diode 4148
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Zener Diode 3v 400mW
Abstract: transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998
Text: INDEX Order Code Description Page Number – Philips Semiconductors 1 485-068 DS750 Development Kit 1 527-749 87C750 Hardware Kit 1 – Philips Semiconductors Data Communications UART Product Line 2 790-590 80C51 In a Box 3 – 80C51 Family Features 3 –
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DS750
87C750
80C51
PZ3032-12A44
BUK101-50GS
BUW12AF
BU2520AF
16kHz
BY328
Zener Diode 3v 400mW
transistor bc548b
BC107 transistor
TRANSISTOR bc108
bc547 cross reference chart
Transistor BC109
DIAC OB3
DIAC Br100
74HCT IC family spec
TRANSISTOR mosfet BF998
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PHP5N40
Abstract: PHX2N60 PHX4N40 PHX7N40E
Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated PHX7N40E FEATURES SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Isolated package
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PHX7N40E
OT186A
PHP5N40
PHX2N60
PHX4N40
PHX7N40E
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PHP5N40
Abstract: PHX2N60 PHX4N40
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in an isolated plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast
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OT186A
PHX4N40
PHP5N40
PHX2N60
PHX4N40
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PHP5N40E
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance
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O220AB
PHP5N40E
PHP5N40E
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of PHP5N40E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable
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PHP5N40E
PHX4N40E
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TRANSISTOR FS 10 TM
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION PHP5N40E QUICK REFERENCE DATA SYMBOL N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and
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PHP5N40E
T0220AB
TRANSISTOR FS 10 TM
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of PHP5N40E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable
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PHP5N40E
PMX4N40E
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PHP5N40E
Abstract: T0220AB
Text: Objective specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance
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PHP5N40E
T0220AB
T0220AB;
T0220
PHP5N40E
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buk7530-55
Abstract: mosfet-n SOT166 TOPFET buk7530
Text: SELECTION GUIDE Page TOPFETs 14 PowerMOS Transistors 16 Insulated Gate Bipolar Transistors 23 Philips Semiconductors TOPFETs VDS Selection Guide @ID FUSION O) (V) (A) Id w Pd (W) TYPE NUMBER TECHNOLOGY ENVELOPE 50 0.028 25 50 125 BUK106-50L TOPFET SOT263
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56-800A
BUK446-800A
BUK456-800B
BUK446-800B
BUK454-800A
BUK444-800A
BUK454-800B
BUK444-800B
BUK456-1000B
BUK446-1000B
buk7530-55
mosfet-n
SOT166
TOPFET
buk7530
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T0-220AB
Abstract: PHILIPS MOSFET igbt mosfet switch BUK866 4001z
Text: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Types added to the range since the last issue of data handbook SC13 1995 are shown in bold print, TYPE NUMBER TECHNOLOGY PACKAGE PAGE BUK100-50DL TOPFET T0220AB 38 BUK100-50GL TOPFET
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BUK100-50DL
BUK100-50GL
BUK100-50GS
BUK101-50DL
BUK101-50GL
BUK101-50GS
BUK102-50DL
BUK102-50GL
BUK102-50GS
BUK104-50L
T0-220AB
PHILIPS MOSFET igbt
mosfet switch
BUK866 4001z
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BUK444-200
Abstract: 100a mosfet Philips Semiconductors Selection Guide BUK454-60H BUK108-50DL BUK102-50GL BUk2 BUK44 BUK9630-55 BUK9570-55
Text: Philips Semiconductors TOPFETs Selection Guide VDs Rdsion lD Id V) (fl) (A) (A) Pd (W) TYPE NUMBER TECHNOLOGY ENVELOPE 50 0.028 25 50 125 BUK106-50L TOPFET 50 0.028 25 50 125 BUK106-50LP TOPFET SOT263-O1 50 0.028 25 50 125 BUK116-50L TOPFET SOT426 50
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7-800B
BUK446-800B
BUK454-800A
BUK444-800A
BUK454-800B
BUK444-800B
BUK456-1OOOB
BUK446-1000B
T0220AB
OT186
BUK444-200
100a mosfet
Philips Semiconductors Selection Guide
BUK454-60H
BUK108-50DL
BUK102-50GL
BUk2
BUK44
BUK9630-55
BUK9570-55
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837 mosfet
Abstract: 912 MOSFET T0-220AB PHILIPS MOSFET igbt BUK108-50DL 50SP 200b mosfet MOSFET 1053 mosfet handbook
Text: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Types added to the range since the last issue of data handbook SC13 1995 are shown in bold print. TYPE NUMBER TECHNOLOGY PACKAGE BUK100-50DL TOPFET T0220AB PAGE 38 BUK100-50GL TOPFET
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BUK100-50DL
BUK100-50GL
BUK100-50GS
BUK101-50DL
BUK101-50GL
BUK101-50GS
BUK102-50DL
BUK102-50GL
BUK102-50GS
BUK104-50L
837 mosfet
912 MOSFET
T0-220AB
PHILIPS MOSFET igbt
BUK108-50DL
50SP
200b
mosfet
MOSFET 1053
mosfet handbook
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance
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OCR Scan
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PDF
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PHP5N40E
T0220AB
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