diode RF 302
Abstract: APD0520-000 BRO375-09A APD0505-000 APD0510-000 APD0805-000 APD0810-000 APD1510-000 APD1520-000 APD2220-000
Text: Applications • General purpose, switching Features • Low capacitance • Low resistance • Fast switching • Low distortion attenuation • ADS models available Silicon PIN Diode Chips Skyworks broad product portfolio includes PIN diodes as packaged and bondable silicon
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BRO375-09A
diode RF 302
APD0520-000
BRO375-09A
APD0505-000
APD0510-000
APD0805-000
APD0810-000
APD1510-000
APD1520-000
APD2220-000
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BB 509 varicap diode
Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s
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BGU7073
Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by
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PIN diode ADS model
Abstract: PIN attenuator ADS model ll110 simulation ads advanced design system ADS 10 diode diode ADS model TOKO INDUCTORS PIN diode SPICE model HMPP-3860
Text: HMPP-3865 MiniPAK PIN Diode High Isolation SPDT Switch Design for 1.9 GHz and 2.45 GHz Applications Application Note 1330 Introduction The Agilent HMPP-3865 parallel diode pair combines low inductance, low capacitance and low package parasitics, increasing
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HMPP-3865
5988-8470EN
PIN diode ADS model
PIN attenuator ADS model
ll110
simulation ads
advanced design system
ADS 10 diode
diode ADS model
TOKO INDUCTORS
PIN diode SPICE model
HMPP-3860
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PIN diode ADS model
Abstract: Microwave PIN diode spice Microwave detector diodes 18 GHz HSMS-285x model ADS 10 diode Microwave detector diodes HSMS-286 diode ADS model spice HSMS-285X
Text: 6 July 1999 Choosing the Right Diode For Your AGC Detector Raymond W. Waugh Diode Applications, Wireless Semiconductor Division Hewlett-Packard Company AGC Automatic Gain Control loops are used to control the gain or output power of amplifiers in a wide variety
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HSMS-282x
HSMS-285x
HSMS-286x
theHSMS-282x
HSMS-286x
PIN diode ADS model
Microwave PIN diode spice
Microwave detector diodes 18 GHz
HSMS-285x model
ADS 10 diode
Microwave detector diodes
HSMS-286
diode ADS model
spice
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PIN diode ADS model
Abstract: PIN attenuator ADS model PIN diode SPICE model TOKO INDUCTORS TOKO INDUCTORS spice HMPP-3860 HMPP-3862 HMPP-3865 MCH18 RG200D
Text: HMPP-3865 MiniPAK PIN Diode High Isolation SPDT Switch Design for 1.9 GHz and 2.45 GHz Applications Application Note 1330 Introduction The Avago Technologies HMPP-3865 parallel diode pair combines low inductance, low capacitance and low package parasitics, increasing the maximum frequency
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HMPP-3865
5988-8470EN
HSMP-389V
HSMP-3890
PIN diode ADS model
PIN attenuator ADS model
PIN diode SPICE model
TOKO INDUCTORS
TOKO INDUCTORS spice
HMPP-3860
HMPP-3862
MCH18
RG200D
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Avago 9886
Abstract: XFRV NE3210 FR4 substrate height and thickness rogers fll120 SKD-ONS-ST23-001 BFP949 Rohm Diodes
Text: M O DE L I T HI CS EXEMPLAR LIBRARY LIBRARY USER MANUAL V11 For Agilent Technologies Advanced Design System MODELITHICS EXEMPLAR LIBRARY CONTENTS CONTENTS . 2 INSTALLATION INSTRUCTIONS . 8
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com/peixun/antenna/116
//shop36920890
Avago 9886
XFRV
NE3210
FR4 substrate height and thickness rogers
fll120
SKD-ONS-ST23-001
BFP949
Rohm Diodes
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PIN diode ADS model
Abstract: APN1002 bluetooth advantages and disadvantages BAP51-02 diode ADS model BAP51 Series RX-2 -G rx tx switch 433 TXC18 microstripline FR4
Text: Philips Semiconductors Application note AN10173-01 2.45 GHz T/R, RF switch for e.g. bluetooth application using PIN diodes 1 Introduction. One of the most important building blocks for today’s wireless communication equipment is a high performance RF switch. The switch main function is to switch an RF port ANT between the transmitter
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AN10173-01
BAP64-02
APN1002
PIN diode ADS model
bluetooth advantages and disadvantages
BAP51-02
diode ADS model
BAP51 Series
RX-2 -G
rx tx switch 433
TXC18
microstripline FR4
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Abstract: rx tx switch 433 APN1002 BAP51-02 ADS 10 diode BAP64-02 SC79 TL244 wireless switch circuit diagram with PCB Design
Text: Philips Semiconductors Application note AN10173-01 2.45 GHz T/R, RF switch for e.g. bluetooth application using PIN diodes 1 Introduction. One of the most important building blocks for today’s wireless communication equipment is a high performance RF switch. The switch main function is to switch an RF port ANT between the transmitter
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AN10173-01
BAP64-02
APN1002
PIN diode ADS model
rx tx switch 433
BAP51-02
ADS 10 diode
SC79
TL244
wireless switch circuit diagram with PCB Design
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PIN diode ADS model
Abstract: BAP51-02 HIGH POWER ANTENNA SWITCH PIN DIODE APN1002 BAP64-02 SC79 bluetooth transmitter circuit diagram spdt switch ADS 10 diode tl144
Text: Application Philips Semiconductors Business Line RF Modules, MST Consumer Title: 2.45 GHz T/R, RF switch for e.g. bluetooth application using PIN diodes Author: Johan Janssen Doc. Nr RNR-T20-APPL-01/1686 Date: 2001-09-25 1 Introduction. One of the most important building blocks for today’s wireless communication equipment is a high
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RNR-T20-APPL-01/1686
BAP64-02
APN1002
PIN diode ADS model
BAP51-02
HIGH POWER ANTENNA SWITCH PIN DIODE
SC79
bluetooth transmitter circuit diagram
spdt switch
ADS 10 diode
tl144
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PIN diode ADS model
Abstract: HSMS-2820 LSSP S11 SCHOTTKY diode 1UW SOT 23 diode ADS model 84192 HSMS2820 HSMS-2825 HSMS-282K
Text: Design of an Input Matching Network for a DC biased 850 MHz Small Signal Detector Application Note 1187 Introduction This application note describes the use of the HSMS-2820 in small signal detector applications at 850 MHz. The single series diode HSMS-2820 has a detection sensitivity[1] of about 30 mV /µW; i.e., it can produce an output of
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HSMS-2820
HSMS-2820)
OT-23
6042-16b
LL2012-F22NK
LL2012F3N3K
HSMS-2820
5968-7756E
PIN diode ADS model
LSSP
S11 SCHOTTKY diode
1UW SOT 23
diode ADS model
84192
HSMS2820
HSMS-2825
HSMS-282K
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triangle wave
Abstract: ADS1210 ADS1211 ADS1212 ADS1213 REF1004
Text: OVERDRIVING THE INPUTS TO THE ADS1210, ADS1211, ADS1212, AND ADS1213 By Bonnie C. Baker A common situation, yet undesirable condition, is to have the input signal of an A/D converter such as one of BurrBrown’s delta-sigma converters overdrive the input stage.
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ADS1210,
ADS1211,
ADS1212,
ADS1213
ADS1212
ADS1213
10Vp-p.
triangle wave
ADS1210
ADS1211
REF1004
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triangle wave
Abstract: AB-115 ADS1210 ADS1211 ADS1212 ADS1213 REF1004
Text: OVERDRIVING THE INPUTS TO THE ADS1210, ADS1211, ADS1212, AND ADS1213 By Bonnie C. Baker A common situation, yet undesirable condition, is to have the input signal of an A/D converter such as one of BurrBrown’s delta-sigma converters overdrive the input stage.
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ADS1210,
ADS1211,
ADS1212,
ADS1213
ADS1212
ADS1213
10Vp-p.
triangle wave
AB-115
ADS1210
ADS1211
REF1004
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ADS1210
Abstract: triangle wave code c30 diode ADS1211 ADS1212 ADS1213 REF1004 ADS1210, ADS1211 10vpp triangle wave generator
Text: OVERDRIVING THE INPUTS TO THE ADS1210, ADS1211, ADS1212, AND ADS1213 By Bonnie C. Baker A common situation, yet undesirable condition, is to have the input signal of an A/D converter such as one of BurrBrown’s delta-sigma converters overdrive the input stage.
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ADS1210,
ADS1211,
ADS1212,
ADS1213
ADS1212
ADS1213
10Vp-p.
ADS1210
triangle wave
code c30 diode
ADS1211
REF1004
ADS1210, ADS1211
10vpp triangle wave generator
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AN2657
Abstract: walkie-talkie NONLINEAR MODEL LDMOS military mobility DB-54003L-175 PD54003L-E T200 PD54003L microwave heating equations
Text: AN2657 Application note An innovative verilog model for predicting LDMOS DC, small and large signal behavior Introduction To reduce the design cycle time and cost for wireless applications it is useful to have models that can help RF Engineers predict and simulate the behavior of RF power transistors.
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AN2657
AN2657
walkie-talkie
NONLINEAR MODEL LDMOS
military mobility
DB-54003L-175
PD54003L-E
T200
PD54003L
microwave heating equations
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d089
Abstract: 253795 intel schematics
Text: DP Optimized Intel Itanium® 2 Processor Datasheet Intel® Itanium® 2 Processor 1.40 GHz with 1.5 MB L3 Cache Intel® Itanium® 2 Processor 1.40 GHz with 3 MB L3 Cache Intel® Itanium® 2 Processor 1.60 GHz with 3 MB L3 Cache Low Voltage Intel® Itanium® 2 Processor
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250945
Abstract: intel schematics
Text: Intel Itanium® 2 Processor Datasheet Intel® Itanium® 2 Intel® Itanium® 2 Intel® Itanium® 2 Intel® Itanium® 2 Intel® Itanium® 2 Processor 1.5 GHz with 6M L3 Cache Processor 1.4 GHz with 4M L3 Cache Processor 1.3 GHz with 3M L3 Cache Processor 1.0 GHz with 3M L3 Cache
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253795
Abstract: D094 intel schematics
Text: DP Optimized Intel Itanium® 2 Processor Datasheet Intel® Itanium® 2 Processor 1.40 GHz with 1.5 MB L3 Cache Low Voltage Intel® Itanium® 2 Processor Product Features • ■ ■ Optimized for dual processor-based platforms and clusters: — Low Voltage Itanium® 2 processor
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SMA MARKING L09
Abstract: a006 ae02 marking b09 0287 D081 TCO marking a004 TB D83 diode A003 ITP700 Intel Itanium
Text: Intel Itanium® 2 Processor Intel® Itanium® 2 Processor 1.66 GHz with 9 MB L3 Cache Intel® Itanium® 2 Processor 1.66 GHz with 6 MB L3 Cache Intel® Itanium® 2 Processor 1.6 GHz with 9 MB L3 Cache Intel® Itanium® 2 Processor 1.6 GHz with 6 MB L3 Cache
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AN1223
Abstract: MCM6264C MCM67B518 64KX1 MC6440
Text: MOTOROLA Order this document by MCM/D SEMICONDUCTOR TECHNICAL DATA AN1223 A Zero Wait State Secondary Cache for Intel’s Pentium Prepared by: Michael Peters, FSRAM Applications Engineer Due to the increased complexity and sheer memory size requirements of new and forthcoming operating systems
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AN1223
MC64400/D*
AN1223
MCM6264C
MCM67B518
64KX1
MC6440
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Intel d101 motherboard diagram schematic
Abstract: MOTHERBOARD INTEL d101 intel D102 motherboard intel 9100 80549KC a006 ae02 marking core i3 mother board circuit marking h06 SMA marking code H16
Text: Dual-Core Intel Itanium® Processor 9000 and 9100 Series Dual-Core Intel® Itanium® Processor 1.6 GHz with 24 MB L3 Cache 9050 Dual-Core Intel® Itanium® Processor 1.6 GHz with 18 MB L3 Cache 9040 Dual-Core Intel® Itanium® Processor 1.6 GHz with 8 MB L3 Cache 9030
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9150M
9150N
Intel d101 motherboard diagram schematic
MOTHERBOARD INTEL d101
intel D102 motherboard
intel 9100
80549KC
a006
ae02 marking
core i3 mother board circuit
marking h06
SMA marking code H16
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Untitled
Abstract: No abstract text available
Text: Dual-Core Intel Itanium® Processor 9000 and 9100 Series Dual-Core Intel® Itanium® Processor 1.6 GHz with 24 MB L3 Cache 9050 Dual-Core Intel® Itanium® Processor 1.6 GHz with 18 MB L3 Cache 9040 Dual-Core Intel® Itanium® Processor 1.6 GHz with 8 MB L3 Cache 9030
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9150M
9150N
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80543KC
Abstract: 250945 06191
Text: Intel Itanium® 2 Processor Intel® Itanium® 2 Processor 1.60 GHz with 9MB L3 Cache Intel® Itanium® 2 Processor 1.60 GHz with 6MB L3 Cache Intel® Itanium® 2 Processor 1.50 GHz with 6MB L3 Cache Intel® Itanium® 2 Processor 1.50 GHz with 4MB L3 Cache
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a006
Abstract: ae02 marking A003 A004 ITP700 Intel Itanium D085 TCO intel schematics
Text: DP Optimized Intel Itanium® 2 Processor Datasheet Intel® Itanium® 2 Processor 1.40 GHz with 1.5MB L3 Cache Intel® Itanium® 2 Processor 1.40 GHz with 3MB L3 Cache Intel® Itanium® 2 Processor 1.60 GHz with 3MB L3 Cache at 400 and 533 MHz System Bus
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