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    PJ 4N DIODE Search Results

    PJ 4N DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    PJ 4N DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    pj 89 diode

    Abstract: LR645 equivalent FED-STD-209 pj 54 diode TN0110 equivalent pj 57 diode CCW SOT23 HV5808 220v ac to 12V 20A SMPS high-frequency control sot-89
    Text: Supertexinc. Short Form Catalog '96 High Voltage Integrated Circuits and DMOS Transistors Supertex inc. Leadership in CMOS/D MOS Technologies Supertex, Inc. designs, develops, manufactures, and markets quality semiconductor products for use in data processing, tele­


    OCR Scan     		O-220 O-243 OT-89) OT-23 20-Terminal pj 89 diode LR645 equivalent FED-STD-209 pj 54 diode TN0110 equivalent pj 57 diode CCW SOT23 HV5808 220v ac to 12V 20A SMPS high-frequency control sot-89 PDF

    pj 89 diode

    Abstract: HV7708PG HV7808 pj 44 diode HV5808 VQ10003 VN 300 tp2106 220v ac to 9v dc converter pj 56 diode
    Text: M Supertex m e. Selector Guides MOSFETs S upertex enhancem ent- and depletion-m ode MOSFETs, utilizing vertical and lateral double-diffused processes, are suitable for a w ide variety of applications. They feature low capacitance for ease of drive and low gate-source threshold voltages fo r direct


    OCR Scan     		OT-23 TN2101K1 TN2106K1 TN2124K1 TP2106K1 VN2110K1 VP2110K1 -10ack HV9111 HV9112 pj 89 diode HV7708PG HV7808 pj 44 diode HV5808 VQ10003 VN 300 tp2106 220v ac to 9v dc converter pj 56 diode PDF

    mosfet cross reference

    Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
    Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is


    Original     		T0-92 options4206A ZVN4206C ZVN4206E ZVN4306A TN2106K1 VN2210N3 TN0606N3 TN0606N6 mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode PDF

    GE 4N35

    Abstract: ES1868 4N32-4N32A-4N33 GE 4N33 4N29 4N29A 4N30 4N31 4N32 4N32A
    Text: G E SOLID STATE 01 D E | 3 f l 7 5 Q f l l □Ont.74 1 Optoelectronic Specifications 2$ Photon Coupled Isolator 4N29-4N29A-4N30-4N31 4N32-4N32A-4N33 — SYtTini Ga As Infrared E m itting Diode & NPN Silicon Photo-D arlington Am plifier T h e G E S o lid S ta te 4N 29 th ru 4N 33 devices co n sist o f a g allium arsen id e


    OCR Scan     		4N29-4N29A-4N30-4N31 4N32-4N32A-4N33 4N35-37 GE 4N35 ES1868 4N32-4N32A-4N33 GE 4N33 4N29 4N29A 4N30 4N31 4N32 4N32A PDF

    pj 81 diode

    Abstract: pj 53 diode S60SC4M pj 4n diode 100 LMR 60 diode 4060 SHINDENGEN DIODE Diode 9H zzhs
    Text: P%/Z!J7+f$-F- - /g y ‘Y-f:=/@ Schottky Barrier Diode Twin Diode Unit: m m 4ov 60A ma l Tj 150°C mi!%% RATINGS •#%#i%t~#t Absolute Maximum Ratings %@1& 4% Ratings Unit Tstg -4o- 150 “C ‘G 150 “C 4% 3% Conditions t%G%i%c Storage Temperature $&%%%B


    Original     		zLx3BB-53 pj 81 diode pj 53 diode S60SC4M pj 4n diode 100 LMR 60 diode 4060 SHINDENGEN DIODE Diode 9H zzhs PDF

    a4n33

    Abstract: H11B255 H13A2 H11C1 photo interrupter module photo interrupter module h13a1 4N38 4N38A H11A10 H11AA1
    Text: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% ID nA MAX. BVceo (VOLTS) MIN. 50 30 100 200 30 30 100 100 100 100 50 50 300 300 100 100 100 100 100 100 100 100 100 100 100


    OCR Scan     		H11A10 H11AA1 H11AA2 H11D1 H11D2 H11D3 H11D4 4N38A H11B1 H11B2 a4n33 H11B255 H13A2 H11C1 photo interrupter module photo interrupter module h13a1 4N38 PDF

    Untitled

    Abstract: No abstract text available
    Text: * LOW POWER HEX TTL-to-ECL TRANSLATOR SYNERGY SY100S324 SEMICONDUCTOR FEATURES DESCRIPTION The SY100S324 is a hex translator designed to convert TTL logic levels to 100K ECL levels. The inputs are TTL compatible with differential outputs that can either be


    OCR Scan     		SY100S324 SY100S324 SY100S324DC D24-1 SY100S324FC F24-1 100S324JC J28-1 SY100S324JCTR PDF

    DIODE ku 1490

    Abstract: zener 814 KS 2152 kd 2902 4j marking code zener zener 7.5 B 4c DDZ10DSF
    Text: DDZ2V4ASF – DDZ39DSF 0.5W SURFACE MOUNT PRECISION ZENER DIODE Features Mechanical Data • • • • • • • • 500mW Power Dissipation on FR-4 PCB Very Tight Tolerance on VZ Ideally Suited for Automated Assembly Processes Lead, Halogen and Antimony Free, RoHS Compliant Note 1


    Original     		DDZ39DSF 500mW OD323F J-STD-020 MIL-STD-202, DS31987 DIODE ku 1490 zener 814 KS 2152 kd 2902 4j marking code zener zener 7.5 B 4c DDZ10DSF PDF

    4j marking code zener

    Abstract: DIODE ku 1490 KS 2152 diode marking code 4n DDZ18CSF KT 829 b marking code pj yn 1018 zener diode marking 4x DDZ33CSF
    Text: DDZ2V4ASF – DDZ39DSF 0.5W SURFACE MOUNT PRECISION ZENER DIODE Features Mechanical Data • • • • • • • 500mW Power Dissipation on FR-4 PCB Very Tight Tolerance on VZ Ideally Suited for Automated Assembly Processes Lead, Halogen and Antimony Free, RoHS Compliant Note 1


    Original     		DDZ39DSF 500mW OD323F J-STD-020 MIL-STD-202, DS31987 4j marking code zener DIODE ku 1490 KS 2152 diode marking code 4n DDZ18CSF KT 829 b marking code pj yn 1018 zener diode marking 4x DDZ33CSF PDF

    DDZ10DSF

    Abstract: No abstract text available
    Text: DDZ2V4ASF – DDZ39DSF 0.5W SURFACE MOUNT PRECISION ZENER DIODE Features Mechanical Data • • • • • • • • 500mW Power Dissipation on FR-4 PCB Very Tight Tolerance on VZ Ideally Suited for Automated Assembly Processes Lead, Halogen and Antimony Free, RoHS Compliant Note 1


    Original     		DDZ39DSF 500mW OD323F J-STD-020 MIL-STD-202, DS31987 DDZ10DSF PDF

    A571

    Abstract: 2SK1286 TEA-509 TRF 509
    Text: M O S Field E ffect P o w e r Transistor 2SK1286 s < 2SK1286 li, / > \. 0 ^ n — M O S F T 7 - MOS W 5 fe tt, E . : mm 10.0 + 0.3 4.5-0 2 0 3.2 + 0 .2 •; + > 7 t ' < A fli * ? . v « x t t . > iiC-f/L ? ' , * -f :/ - f > u -7 > v ^ ; iii| iii[ ; ^ j j ü 'e t .


    OCR Scan     		2SK1286 2SK1286 A571 TEA-509 TRF 509 PDF

    LA4192

    Abstract: LA4192 equivalent headphones amplifier 9V ic la4192 block diagram 919D
    Text: Ordering number: EN919D ~| Monolithic Linear 1C LA4192 No. 919D SAIÊYO 1 to 2 .3 W 2-Channel af Power Amp I FEATURES • Has two channels that can be used for either stereo or bridge amp. . High outputs: LA4192 provides 2,3 W per channel for 2 channel stereo connected at V c c = 9 V, R|_ = 4ft, or


    OCR Scan     		EN919D LA4192 LA4192 LA4192 equivalent headphones amplifier 9V ic la4192 block diagram 919D PDF

    BAS 98 ATEX 2380 X

    Abstract: KEMA 01 ATEX 2130 u T2D 4N DIODE 0/BAS 98 ATEX 2380 X kema junction box
    Text: Weidmüller – Partner in Industrial Connectivity. 1 Modular Terminal Blocks Catalogue 2012/2013 Catalogue 2012/2013 Modular Terminal Blocks As experienced experts we support our customers and partners around the world with products, solutions and services in the industrial environment of power,


    Original     		1282250000/03/2012/SMDM BAS 98 ATEX 2380 X KEMA 01 ATEX 2130 u T2D 4N DIODE 0/BAS 98 ATEX 2380 X kema junction box PDF

    schottky diode sb 5400

    Abstract: 0741L UL1560 IMX86 imx26 ILX02 TJ 1H 74LSXX IC 074CM RHX11
    Text: napc/ signetics labSBIEH 0021720 1 « S I C 3 SHC D “ 8 2 5 0 0 O 'ò ^ S T G 'N jH T T C 5” C Ü R P 5 4C "'2L 720 BIPOLAR LSI PRODUCTS COMPOSITE CELL LOGIC CCL SEMI-CUSTOM FAMILY = r~ _ T-42-11-05 The packing density of an IS L cell (Figure 3) is two to three times


    OCR Scan     		PDF

    LA4470

    Abstract: A100G equivalent for LA4470 3023A-S14HIC LA4471 speaker protector DIDE ZENER jrk-3 circuit diagram of rc car 2SA608
    Text: [ Ordering number : EN 1866G LA4470,4471 Monolithic Linear ICs BTL-OCL 20W P o w e r A m p — for Ca r •■■■ //— S tereo / / / \ , Us e - Features ■ ; W jllf. High output: 20W/THD=lO*, 15W/THD^1i • Low distortion: 0,06? . Excellent ripple rejection: 65dB


    OCR Scan     		1866G LA4470 LA4H70 LA4470) A100G equivalent for LA4470 3023A-S14HIC LA4471 speaker protector DIDE ZENER jrk-3 circuit diagram of rc car 2SA608 PDF

    CTR34

    Abstract: FGE2000 BL33B DFI01 Fairchild ZN 1010 L1332 JKI02 ctr-34 SHR04 OAI43
    Text: NATL SEMICOND -CMEnORY> □2E D | ts D iia b □□bi3n ? I FGE Series ECL Gate Arrays FAIRCHILD A Schlumberger Company Description FGE Series Features The FGE Series of ECL gate arrays are the fastest silicon gate arrays commercially available. These advanced ECL gate ar­


    OCR Scan     		F100K 225-picosecond andRS003 TTRS103 Controller/16-out CTR34 FGE2000 BL33B DFI01 Fairchild ZN 1010 L1332 JKI02 ctr-34 SHR04 OAI43 PDF

    amr02

    Abstract: MB91F361 F361 FR30 MB91F361G
    Text: FUJITSU SEMICONDUCTOR FR50 32-BIT MICROCONTROLLER MB91F361G Data sheet Release 1.3 19-Jul-2000 Revision History Revision Date Item 1.0 18-Feb.-00 First Release based on data sheets of MB91F361 and MB91F362 1.1 29-Feb.-00 correction of typos, add remark about removal of pull up resistors


    Original     		32-BIT MB91F361G 19-Jul-2000 18-Feb MB91F361 MB91F362 29-Feb 12-Jul-00 F361B F361G amr02 F361 FR30 MB91F361G PDF

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent PDF

    eto thyristor

    Abstract: Z-7100
    Text: ERICSSON $ May 1997 PBL 3764A/4, PBL 3764A/6 Subscriber Line Interface Circuit Description Key Features Note: All data Is also valid for PBL 3764A/6, except maximum ratings for battery voltage. See next page The PBL 3764A/4 Subscriber Line Interface Circuit (SLIC) is a bipolar integrated


    OCR Scan     		764A/4, 764A/6 764A/6, 764A/4 1522-PBL S-164 eto thyristor Z-7100 PDF

    diode sg 5 ts

    Abstract: 9398 649 90011
    Text: 74HC/HCT4046A MSI PHASE-LOCKED-LOOP W ITH VCO FEATURES • • • • • • • • • • T Y P IC A L Low power consumption Centre frequency of up to 17 MHz typ. at V qq = 4.5 V Choice of three phase comparators: EXCLUSIVE-OR; edge-triggered JK flip-flop;


    OCR Scan     		74HC/HCT4046A diode sg 5 ts 9398 649 90011 PDF

    SGS M114S

    Abstract: M114S TDA 931 PS TDA7284 equivalent TDA2003 equivalent TDA73XX TOKO kacs 10.7MHz fm coil TBA820M equivalent 27mhz remote control transmitter circuit FOR CAR UC3840
    Text: AUDIO POWER & PROCESSING ICs DATABOOK 1st EDITION JUNE 1991 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS W ITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics.


    OCR Scan     		PDF

    pipo tablet

    Abstract: 43lI LC6528c LA6527 6628H 6528 QSC11 connecting diagram for pc 7137 ibm 0528C LE-6T
    Text: O rdering n um b er: E N 2 2 6 0 P ~ | No. 2260D SAiYO L C 6 5 2 7 C / H , 6 5 2 8 C 7 h T F CMOS LSI S i n g l e -Ch i p 4 - B i t Mi c r o c o m p u t e r s f o r ' S m a l l - S c a l e C o n t r o l -O r i e n t e d A p p l i c a t i o n s i / / General Description


    OCR Scan     		EN2260Ã 2260D lc6527c/h, 6528c7ft LC6528C/H LC6527C/^ LC6527 LC6528 LC6527C/H pipo tablet 43lI LC6528c LA6527 6628H 6528 QSC11 connecting diagram for pc 7137 ibm 0528C LE-6T PDF

    siemens Logo TDE manual

    Abstract: wega 3140 smd marking code mfw cb pj 47 diode Diode MFW 26
    Text: Identification systems Contents CATALOGUE 7 Identification systems Appendix Introduction A Terminal markers B Wire and cable markers C Device markers D Printing systems E Weidmüller Service V Index X Search according to Type or order number, Worldwide activities


    Original     		PDF

    MB4213

    Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
    Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors


    Original     		SSIP-12 KIA6283K KIA7217AP SSIP-10 KIA6240K KIA6801K KIA6901P/F MB4213 F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD PDF