2EDL23N06
Abstract: trimble R8
Text: Eice DR IV ER High voltage gate driver IC BDTIC E valu atio n B oar d Application Note EV AL -2 E DL2 3N 06 PJ EV AL -2 E DL2 3N 06 PJ Applic atio n N ote Rev. 1.0 2014-04-11 Infin eon T echnol ogi es A G www.BDTIC.com/infineon BDTIC Edition 2014-04-11
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R-0603
R1206
R-0805
0R02/1W
T-NPN-BC848A
2EDL23N06PJ
2EDL23N06
trimble R8
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Transistor PJ 431
Abstract: No abstract text available
Text: HA16103 PJ/FPJ Watchdog Timer Description The HA16103PJ/FPJ monolithic voltage control is designed for microcomputer systems. In addition to voltage regulator, it includes watch dog timer function, power on reset function, and output voltage monitor function.
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HA16103
HA16103PJ/FPJ
HA16103PJ
HA16103FPJ
DP-18A
FP-20DA
Transistor PJ 431
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Transistor PJ 431
Abstract: No abstract text available
Text: HA16103 PJ/FPJ Watchdog Timer Description The HA16103PJ/FPJ monolithic voltage control is designed for microcomputer systems. In addition to voltage regulator, it includes watch dog timer function, power on reset function, and output voltage monitor function.
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HA16103
HA16103PJ/FPJ
HA16103PJ
HA16103FPJ
DP-18A
FP-20DA
Transistor PJ 431
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Transistor PJ 431
Abstract: PJ 431 TRANSISTOR PJ H8/532 h a 431 transistor 2SB857D HA16103 HA16103FPJ HA16103PJ PJ TRANSISTOR
Text: HA16103 PJ/FPJ Watchdog Timer Description The HA16103PJ/FPJ monolithic voltage control is designed for microcomputer systems. In addition to voltage regulator, it includes watch dog timer function, power on reset function, and output voltage monitor function.
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HA16103
HA16103PJ/FPJ
HA16103PJ
DP-18A
HA16103FPJ
FP-20DA
Transistor PJ 431
PJ 431
TRANSISTOR PJ
H8/532
h a 431 transistor
2SB857D
HA16103FPJ
HA16103PJ
PJ TRANSISTOR
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pj 929 diode
Abstract: 2SJ214 sawtooth wave generator through transformer buck-boost chopper 28 pin ic TM 1628 npn vdb 1S2076A pj 83 diode chopper transformer winding HA16666
Text: HA16114P/PJ/FP/FPJ, HA16120FP/FPJ Switching Regulator for Chopper Type DC/DC Converter REJ03F0055-0200Z Previous: ADE-204-020A Rev.2.0 Sep.18.2003 Description The HA16114P/FP/FPJ and HA16120FP/FPJ are single-channel PWM switching regulator controller ICs
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HA16114P/PJ/FP/FPJ,
HA16120FP/FPJ
REJ03F0055-0200Z
ADE-204-020A)
HA16114P/FP/FPJ
HA16120FP/FPJ
HA16120
HA16114
pj 929 diode
2SJ214
sawtooth wave generator through transformer
buck-boost chopper
28 pin ic TM 1628
npn vdb
1S2076A
pj 83 diode
chopper transformer winding
HA16666
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pj 69 diode
Abstract: pj 54 diode pj 83 diode CODE PJ TRANSISTOR PJ pwm circuits 1990 pj 5d diode 1S2076A 240 AC to 12V dc transformer HRP24
Text: HA16114P/PJ/FP/FPJ, HA16120FP/FPJ Switching Regulator for Chopper Type DC/DC Converter Description The HA16114P/FP/FPJ and HA16120FP/FPJ are single-channel PWM switching regulator controller ICs suitable for chopper-type DC/DC converters. Integrated totem-pole output circuits enable these ICs to
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HA16114P/PJ/FP/FPJ,
HA16120FP/FPJ
HA16114P/FP/FPJ
HA16120FP/FPJ
HA16120
HA16114
pj 69 diode
pj 54 diode
pj 83 diode
CODE PJ
TRANSISTOR PJ
pwm circuits 1990
pj 5d diode
1S2076A
240 AC to 12V dc transformer
HRP24
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AMD geode
Abstract: amd geode motherboard
Text: AMD0040 32884a_nxfamily_pb.qxd 9/3/04 3:57 PM Page 1 AMD Geode NX Processor Family THE INTEGER GROUP 1999 Bryan Street, Suite 1700 Dallas, Tx 75201 214 758-6800 Fax (214)758-6904 Date: 09/02/04 Job#: AMD0040 PJ Name: NX1250@6W Product Brief Versatile, Low-Power
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AMD0040
32884a
AMD0040
NX1250
31760b
nxdb1500
deli323
AMD geode
amd geode motherboard
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pj 82 diode
Abstract: pj 906 diode pj 906 pj 48 diode diode pj 33 Phototransistor bp 101 DIODE PJ 2450 pj 17 diode ha17385 0/pj 906 diode
Text: HA17431VPJ/PJ/PAJ/FPJ/FPAJ/PNAJ/UPA, HA17432UPA Shunt Regulator REJ03D0892-0100 Rev.1.00 Apr 03, 2007 Description The HA17431 series is temperature-compensated variable shunt regulators. The main application of these products is in voltage regulators that provide a variable output voltage. The on-chip high-precision reference voltage source can
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HA17431VPJ/PJ/PAJ/FPJ/FPAJ/PNAJ/UPA,
HA17432UPA
REJ03D0892-0100
HA17431
pj 82 diode
pj 906 diode
pj 906
pj 48 diode
diode pj 33
Phototransistor bp 101
DIODE PJ 2450
pj 17 diode
ha17385
0/pj 906 diode
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28 pin ic TM 1628
Abstract: pj 83 diode chopper transformer winding pj 54 diode TM 1628 IC SOP HA16666 pj 89 diode pj 5d diode Nippon capacitors HRP24
Text: HA16114P/PJ/FP/FPJ, HA16120FP/FPJ Switching Regulator for Chopper Type DC/DC Converter ADE-204-020A Z Rev. 1 Dec. 2000 Description The HA16114P/FP/FPJ and HA16120FP/FPJ are single-channel PWM switching regulator controller ICs suitable for chopper-type DC/DC converters. Integrated totem-pole output circuits enable these ICs to
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HA16114P/PJ/FP/FPJ,
HA16120FP/FPJ
ADE-204-020A
HA16114P/FP/FPJ
HA16120FP/FPJ
HA16120
HA16114
28 pin ic TM 1628
pj 83 diode
chopper transformer winding
pj 54 diode
TM 1628 IC SOP
HA16666
pj 89 diode
pj 5d diode
Nippon capacitors
HRP24
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553B
Abstract: IRFF9220 JANTX2N6847 JANTXV2N6847 diode ior 0014
Text: |0 p pj p| I IOR Rectifier I pj Provisional Data Sheet No. PD-9.553B I" I q JANTX2N6847 HEXFET POWER MOSFET JANTXV2N6847 [REF:MIL-PRF-19500/563] [GENERIC :IRFF9220] P -C H A N N E L -200 Volt, 1.5Q HEXFET Product Summanf HEXFET technology is the key to International
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JANTX2N6847
JANTXV2N6847
MIL-PRF-19500/563]
IRFF9220]
553B
IRFF9220
JANTX2N6847
JANTXV2N6847
diode ior 0014
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Untitled
Abstract: No abstract text available
Text: Supertexinc. HV441 P relim inary High-Voltage Ring Generator Ordering Information Operating Voltage Package Options Vv PP1 - Vv NN1 44-Pin PLCC 220V HV441 PJ General Description Features □ 220V maximum operating voltage □ Integrated high voltage transistors
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HV441
44-Pin
HV441
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Untitled
Abstract: No abstract text available
Text: Preliminary_ R F 2 1 2 8 PJ MICRO-DEVICES MEDIUM POWER LINEAR AM PLIFIER Typical Applications • PCS Communication Systems Commercial and Consumer Systems • 2.5GHz ISM Band Applications Portable Battery Powered Equipment • Wireless LANs
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RF2128P
45GHz
1900MHz
TD04131
00044E
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B52 transistor
Abstract: No abstract text available
Text: Thal mLUM HEWLETT PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features This device is designed for use in low noise, wideband amplifier, • High Output Power: mixer and oscillator applications 21.0 dBm Typical Pj iB at 2.0 GHz
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AT-42000
AT-42000
44475AM
0017b54
B52 transistor
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transistor 86 y 87
Abstract: eic 57 210 17bs2 AT-42000 AT-42000-GP4 pj 68 S2a
Text: « Thai minM HP AECWKLAERTDT Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features This device is designed for use in low noise, wideband amplifier, • High O utput Power: 21.0 dBm Typical Pj dB at 2.0 GHz m ixer and oscillator applications
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AT-42000
AT-42000
KM/50
44475aii
ooi7b53
0017b54
transistor 86 y 87
eic 57 210
17bs2
AT-42000-GP4
pj 68 S2a
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N12015
Abstract: 5672 2N5671 2N5672
Text: MANUFACTURING 2N5671 2N 5672 NPN SILICON pj-ANAR MULTI EPITAXIAL POWER TRANSISTORS HIG H CURRENT! FAST SW ITC H IN G APPLICATIONS 140 waJtts at 2 ^ C 30A rated collector current 0 .5 /¿s fall tim e TO —3 O U TLIN E D IM E N S IO N S mm 1.7 max. 22.86
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2N5671
N12015
5672
2N5672
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Untitled
Abstract: No abstract text available
Text: W hat HEWLETT« mLMÆ PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42070 Features • High Output Power: 21.0 dBm Typical Pj dB at 2.0 GHz 20.5 dBm Typical Pi ¿b at 4.0 GHz • High Gain at 1 dB Compression: 15.0 dB Typical Gi ^ at 2.0 GHz
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AT-42070
AT-42070
Rft/50
0D17bb3
DG17bb4
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FR07* diode
Abstract: FR07
Text: j pj j-0 f flQfjonO I Provisional Data Sheet No. PD-9.418A IOR Rectifier HEXFET POWER MOSFET IRFN450 N - CHA N N E L Product Summary Part Number I 500 Volt, 0.415ft HEXFET H EXFET technology is the key to International Rectifier’s advanced line of power M O S F E T transistors.The effi
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IRFN450
415ft
415C2
4ASS452
24TGb
FR07* diode
FR07
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F2683
Abstract: No abstract text available
Text: That HEWLETT mi/LMPACKARD 2-16 GHz General Purpose Gallium Arsenide FET Technical Data A TF-26836 F e a tu r e s D escrip tio n • High Output Power: 18.0 dBm Typical Pj dB at 12 GHz The ATF-26836 is a high perfor mance gallium arsenide Schottkybarrier-gate field effect transistor
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TF-26836
ATF-26836
5965-8704E
44475A4
DD1771Ö
F2683
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Untitled
Abstract: No abstract text available
Text: CF003 Series GaAs Pseudomorphic HEMT and MESFET Chips □ Low Noise Figure: 1.0 dB at 12 GHz □ High Gain: 10 dB at 12 GHz □ Pj{jg Power: +22 dBm at 12 GHz □ Wide Dynamic Range □ Active Layers Include: Pseudomorphic HEMT, Epitaxial and Ion Implanted
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CF003
CF003-03
CF003
CF003-01
n745D3
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2SC2103
Abstract: TRANSISTOR 2SC2103 TRANSISTOR 2SC RFC-M transistor power rating 5w
Text: 'J 3 5> y tiP U T £ *ì> ? l 7 2S c 2 { ; - t B ^ y = J Z y .ICON NPN EPITAXIAL PLANAR TRANSISTOR HI 1 * ffl O VHF Band Power A m plifier Applications INDUSTRIAL APPLICATIONS • * i i c B .n tim m K t k A 'c -i- o P 0 = 24W Min ) ( f = 175MHz, V CC = 12.5X Pj = XW )
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175MHz,
175MHz
f-175MHz.
Vcc-12
P0-25W
2sc2103
2SC2103
TRANSISTOR 2SC2103
TRANSISTOR 2SC
RFC-M
transistor power rating 5w
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cny57a
Abstract: CNY57 CNY57AU 4N25 PHILIPS "sot-90B" CNY57U Philips 4N26 sot90b sot-90B 80T-90B
Text: N AMER PHILIPS/DISCRETE 5SE D • ^53=131 Gült^S1! 1 ■ 'P'+l-Pj 76 Optoelectronic Devices OPTOCOUPLERS PACKAGE OUTLINE TYPE CURRENTTRANSFER RATIO CTR % AT If Vce MIN mA VOLTS V|ORW d.c. VOLTS v C e (s a t) MAX ATff VOLTS mA fc AT mA / i* ton^off TYPICAL
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80T-90B
4N25A
OT-90B
CNX48U
H11B1
cny57a
CNY57
CNY57AU
4N25 PHILIPS
"sot-90B"
CNY57U
Philips 4N26
sot90b
sot-90B
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transistor atf
Abstract: No abstract text available
Text: What H E W L E T T * mLliM PACKARD 2 -1 8 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13100 Features • Low N oise Figure: 1.1 dB Typical at 12 GHz • High A ssociated Gain: 9.5 dB Typical at 12 GHz • High Output Power: 17.5 dBm Typical Pj ¿b at 12 GHz
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ATF-13100
Outli13
ATF-13100
transistor atf
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2SC2407
Abstract: PA33 SC-43A
Text: NEC NPN SILICON TRANSISTOR ELECTRON DEVICE D E S C R IP T IO N FEATU RES 2SC2407 The 2SC2407 is designed for U H F and V H F amplifier. Pout: 160 m W TYP. @ f= 5 0 0 M H z , V CC= 1 2 .6 V Pj=5 mW Class B ABSO LU TE M A X IM U M R A T IN G S Maximum Temperatures
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2SC2407
2SC2407
500MHz,
SC-43A
Vcb-20
PA33
SC-43A
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Untitled
Abstract: No abstract text available
Text: WhatHEWLETT mL'EM P A C K A R D 2 - 1 0 GHz Medium Pow er Gallium Arsenide FE T Technical Data ATF-46101 Features • High Output Power: 27.0 dBm Typical Pj dB at 4 GHz • High Gain a t 1 dB Compression: 12.0 dB Typical Gj ^ at 4 GHz • High Power Efficiency:
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ATF-46101
ATF-46101
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