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    VB1 SOT23

    Abstract: No abstract text available
    Text: PJ2N2222A NPN Epitaxial Silicon Transistors GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: VCEO = 40V • • Collector Dissipation: PD max = 625 mW - TO-92 TO-92 SOT-23 300 mW - SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta = 25℃) Characteristics


    Original     		PDF PJ2N2222A OT-23 OT-23 PJ2N2222ACT PJ2N2222ACX 150mA, VB1 SOT23

    Untitled

    Abstract: No abstract text available
    Text: PJ2N2222A NPN Epitaxial Silicon Transistors GENERAL PURPO SE TRANSISTO R TO-92 • Collector-Emitter Voltage: VCEO = 40V • • Collector Dissipation: P D max = 625 mW - TO-92 SOT-23 300 mW - SOT-23 ABSOLUTE MAXIMUM RATINGS (T a = 25℃) Characteristics


    Original     		PDF PJ2N2222A OT-23 OT-23 PJ2N2222ACT PJ2N2222ACX 150mA 150mA,

    PD SOT-23

    Abstract: No abstract text available
    Text: PJ2N2222A NPN Epitaxial Silicon Transistors GENERAL PURPOSE TRANSISTOR y Collector-Emitter Voltage: VCEO = 40V TO-92 SOT-23 y Collector Dissipation: PD max = 625 mW - TO-92 y Collector Dissipation: PD (max) = 300 mW - SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)


    Original     		PDF PJ2N2222A OT-23 OT-23 PJ2N2222ACT PJ2N2222ACX PD SOT-23