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    PJP1N80

    Abstract: No abstract text available
    Text: PJP1N80 / PJU1N80 TO-220AB/TO-251 800V N-Channel Enhancement Mode MOSFET FEATURES TO-220AB • 1A, 800V, RDS ON =16Ω@VGS=10V, ID=0.5A • • • • • TO-251 Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current


    Original     		PJP1N80 PJU1N80 O-220AB/TO-251 O-220AB IEC61249 2002/95/EC O-220AB O-251 MIL-STD-750 PDF

    P1N80

    Abstract: U1N80 ELER
    Text: PJP1N80 / PJU1N80 TO-220AB/TO-251 800V N-Channel Enhancement Mode MOSFET FEATURES TO-220AB • 1A, 800V, RDS ON =16Ω@VGS=10V, ID=0.5A • • • • • • TO-251 Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current


    Original     		PJP1N80 PJU1N80 O-220AB/TO-251 O-220AB O-251 2002/95/EC O-220AB O-251 MIL-STD-750 PJP1N80 P1N80 U1N80 ELER PDF