Untitled
Abstract: No abstract text available
Text: FAX# 408 944-0970 TITLE 3 LEAD SOT223 PACKAGE OUTLINE & RECOMMENDED LAND PATTERN DRAWING # SOT223-3LD-PL-1 Rev A ECN 013112HC08 Originator S. YEH Change New release UNIT MM Reason New
|
Original
|
OT223
OT223-3LD-PL-1
013112HC08
|
PDF
|
TSB1G7000-E
Abstract: CL21B105KONE TM162JCAWG1 GMC21X7R104K50NTLF DC-003-250 CL21B105 TSB1G7000 GMC21X7R104K50NT ECS-80-20-5PX-DN AXJ115301S
Text: KEY Microchip Technology Incorporated 2355 W. Chandler Blvd. Chandler, AZ 85224-6199 CR: Cross CS: Consign PL: Pack List ASSEMBLY NUMBER: 12-00723 REV: 7 ASSEMBLY NAME: FINAL ASSY, EXPLORER 16 DEVELOPMENT BOARD Qty Part Number Rev D: Drawing B: BOM LBL: Label
|
Original
|
DS30030
DS51282
DS30210
dsPIC33
PIC24F
DS51588
CAB0003
RS-232
TSB1G7000-E
CL21B105KONE
TM162JCAWG1
GMC21X7R104K50NTLF
DC-003-250
CL21B105
TSB1G7000
GMC21X7R104K50NT
ECS-80-20-5PX-DN
AXJ115301S
|
PDF
|
trailing edge dimmer mosfet diac
Abstract: LNK457DG Leviton 6615 Leviton tape 3m 9448 3m 9448 SNX-R1536 EE16 pc40 smd transistor 43t RM34DMA
Text: Title Specification Application Reference Design Report for a 5 W Dimmable Power Factor Corrected LED Driver NonIsolated Using LinkSwitchTM-PL LNK457DG 90 VAC – 265 VAC, >0.9 PF Input; 12 V – 18 V, 350 mA 10% Output LED Driver for A19 Incandescent Lamp
|
Original
|
LNK457DG
RDR-251
trailing edge dimmer mosfet diac
LNK457DG
Leviton 6615
Leviton
tape 3m 9448
3m 9448
SNX-R1536
EE16 pc40
smd transistor 43t
RM34DMA
|
PDF
|
GL949
Abstract: Ic55A
Text: CORPORATION GL949 Description ISSUED DATE :2006/11/20 REVISED DATE : PNP SI L I CO N PL AN AR HI G H C URRE NT T RANSI ST O R The GL949 is designed for general purpose switching and amplifier applications. Features 6Amps continuous current, up to 20Amps pulse current
|
Original
|
GL949
GL949
20Amps
OT-223
Ic55A
|
PDF
|
"Silicon Controlled Rectifier"
Abstract: igniter ignitor 107M TICC107MR-S
Text: CO M PL IA NT TICC107M *R oH S SILICON CONTROLLED RECTIFIER TICC107M Silicon Controlled Rectifier 1 A RMS On-State Current Glass Passivated Wafer 600 V Off-State Voltage IGT 50 µA min, 200 µA max. SOT-223 Package Top View Description The TICC107M is a sensitive gate SCR designed for switching
|
Original
|
TICC107M
TICC107M
OT-223
MD-SOT223-001-a
"Silicon Controlled Rectifier"
igniter
ignitor
107M
TICC107MR-S
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CO M PL IA NT TICC107M *R oH S SILICON CONTROLLED RECTIFIER TICC107M Silicon Controlled Rectifier 1 A RMS On-State Current Glass Passivated Wafer 600 V Off-State Voltage IGT 50 µA min, 200 µA max. SOT-223 Package Top View Description The TICC107M is a sensitive gate SCR designed for switching
|
Original
|
TICC107M
OT-223
MD-SOT223-001-a
OT-223
|
PDF
|
GL1501A
Abstract: No abstract text available
Text: CORPORATION ISSUED DATE :2006/11/20 REVISED DATE : GL1501A NPN SI L I CO N PL AN AR MEDI UM PO W ER HI G H G AI N T RANSI ST O R Description The GL1501A is designed for general purpose switching and amplifier applications. Features 5 Amps continuous current, up to 10Amps pulse current
|
Original
|
GL1501A
GL1501A
10Amps
OT-223
|
PDF
|
GL9401A
Abstract: No abstract text available
Text: CORPORATION ISSUED DATE :2006/11/20 REVISED DATE : GL9401A NPN SI L I CO N PL AN AR MEDI UM PO W ER HI G H G AI N T RANSI ST O R Description The GL9401A is designed for general purpose switching and amplifier applications. Features 5 Amps continuous current, up to 20Amps pulse current
|
Original
|
GL9401A
GL9401A
20Amps
OT-223
|
PDF
|
GL9411A
Abstract: No abstract text available
Text: CORPORATION ISSUED DATE :2006/11/20 REVISED DATE : G L 9 4 11 A PNP SI L I CO N PL AN AR MEDI UM PO WE R HI G H G AI N T RANSI ST O R Description The GL9411A is designed for general purpose switching and amplifier applications. Features 4 Amps continuous current, up to 10Amps pulse current
|
Original
|
GL9411A
10Amps
OT-223
GL9411A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si 3 4 6 0 - EVB Si3460 E VALUATION B OARD U SER ’ S G U I D E 1. Introduction This document is intended to be used in conjunction with the Si3460 data sheet for designers interested in: An Pl No ea t se Re C com on si me de n r S de i3 d f 46 or 2 N
|
Original
|
Si3460
Si3460-EVB
|
PDF
|
tsop 338
Abstract: No abstract text available
Text: Assembly Base List PACKAGE TSSOP-8 SOD-323 SOT-323 SOT-23 SC-59 SOT-89 SIP-3 SIP-4 SOT-25 SOT-26 TSOP-5 TSOP-6 SOT-28 SOT-223 SOP-5/7/8/10 SOP-8Expose SSOP-14 PL-4/S-4 TO-92 P-DIP-8 P-DIP-14/16 MSOP-8 MSOP-10 TO-220/262/263-3/5 TO-251/252 TO-220/263-3 TO-251/252
|
Original
|
OD-323
OT-323
OT-23
SC-59)
OT-89
OT-25
OT-26
OT-28
OT-223
OP-5/7/8/10
tsop 338
|
PDF
|
BFU590G
Abstract: No abstract text available
Text: 62 7 BFU590G NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package. The BFU590G is part of the BFU5 family of transistors, suitable for small signal to medium
|
Original
|
BFU590G
OT223
BFU590G
AEC-Q101
BFU590GX
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 62 7 BFU590G NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package. The BFU590G is part of the BFU5 family of transistors, suitable for small signal to medium
|
Original
|
BFU590G
OT223
BFU590G
AEC-Q101
|
PDF
|
bgy113f
Abstract: BGY113E SOT321 RF Power Modules BGY113G BGY204 BGY113B BGY133 SOT246 SOT342
Text: DISCRETE SEMICONDUCTORS DATA SHEET Selection guide RF Power Modules and Transistors for Mobile Phones 1996 Jun 19 File under Discrete Semiconductors, SC09 Philips Semiconductors RF Power Modules and Transistors for Mobile Phones Selection guide VHF CAR MOBILE
|
Original
|
OT132B
BGY143
BGY132
BGY133
BGY135
to174
bgy113f
BGY113E
SOT321
RF Power Modules
BGY113G
BGY204
BGY113B
BGY133
SOT246
SOT342
|
PDF
|
|
|
SMD TRANSISTOR L6
Abstract: BLT80 philips Trimmer 60 pf KM10 KM10 transistor SMD ic catalogue smd transistor zi MRA775 L5 smd transistor TRANSISTOR SMD L3
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification Supersedes data of May 1992 File under Discrete Semiconductors, SC08b 1996 May 02 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation
|
Original
|
BLT80
SC08b
OT223
OT223
MAM043
SMD TRANSISTOR L6
BLT80
philips Trimmer 60 pf
KM10
KM10 transistor
SMD ic catalogue
smd transistor zi
MRA775
L5 smd transistor
TRANSISTOR SMD L3
|
PDF
|
TRANSISTOR BD139
Abstract: smd transistor L6 philips power transistor bd139 bd139 application note UHF TRANSISTOR bd139 smd BD139 transistor L6 smd transistor TRANSISTOR SMD catalog RF POWER TRANSISTOR NPN
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT70 UHF power transistor Product specification File under Discrete Semiconductors, SC08b 1996 Feb 06 Philips Semiconductors Product specification UHF power transistor BLT70 FEATURES • Very high efficiency • Low supply voltage.
|
Original
|
BLT70
SC08b
OT223H
OT223H
MAM043
TRANSISTOR BD139
smd transistor L6
philips power transistor bd139
bd139 application note
UHF TRANSISTOR
bd139 smd
BD139 transistor
L6 smd transistor
TRANSISTOR SMD catalog
RF POWER TRANSISTOR NPN
|
PDF
|
TRANSISTOR CATALOGUE
Abstract: UHF TRANSISTOR bd139 smd philips power transistor bd139 bd139 application note L6 TRANSISTOR SMD TRANSISTOR L6 BD139 BD139 application power transistor bd139
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT70 UHF power transistor Product specification 1996 Feb 06 Philips Semiconductors Product specification UHF power transistor BLT70 FEATURES • Very high efficiency • Low supply voltage. 4 handbook, halfpage APPLICATIONS
|
Original
|
BLT70
OT223H
OT223H
MAM043
TRANSISTOR CATALOGUE
UHF TRANSISTOR
bd139 smd
philips power transistor bd139
bd139 application note
L6 TRANSISTOR
SMD TRANSISTOR L6
BD139
BD139 application
power transistor bd139
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BLT70 UHF power transistor Product specification 1996 Feb 06 Philips Semiconductors Product specification UHF power transistor BLT70 FEATURES • Very high efficiency • Low supply voltage. 4 handbook, halfpage APPLICATIONS • Hand-held radio equipment in common emitter class-AB
|
Original
|
BLT70
OT223H
OT223H
MAM043
|
PDF
|
AMS1117 equivalent
Abstract: AMS1117 3.3V circuit diagram CS8810 Myson Century cs GPIO14 ep3can
Text: CS8810 General Purpose USB 1.1-to-ATA/ATAPI Bridge Controller FEATURES continued The CS8810 is a single chip general-purpose USB controller, which integrates USB 1.1 compliant transceiver. Together with product dependent firmware and software driver, this chip is able to fulfill
|
Original
|
CS8810
CS8810
220uF
AMS1117/SOT-223
93LC46
100-pin
AMS1117 equivalent
AMS1117 3.3V circuit diagram
Myson Century cs
GPIO14
ep3can
|
PDF
|
SMD Code 12W SOT23
Abstract: 12W SMD MARKING CODE smd 2n2907a 2n2222a SOT223 2N2222A smd 6E SMD CODE MPSA42 SMD SMD MARKING CODE 12w smd npn darlington SMD CODE SOT89 lc
Text: SMD Transistors SOT-89 Case 1.2W TYPE NO. CBCX68 CBCX69 CXT2222A CXT2907A CXT3019 CXT3904 CXT3906 CXT4033 CXT5401 CXT5551 CXTA14 CXTA42 CXTA64 CXTA92 DESCRIPTION NPN HIGH CURRENT PNP HIGH CURRENT NPN AMPL'SWITCH PNP AMPt/SWITCH NPN HIGH CURRENT NPN AM PL/SWITCH
|
OCR Scan
|
OT-89
CBCX68
CBCX69
CXT2222A
CXT2907A
CXT3019
CXT3904
CXT3906
CXT4033
CXT5401
SMD Code 12W SOT23
12W SMD MARKING CODE
smd 2n2907a
2n2222a SOT223
2N2222A smd
6E SMD CODE
MPSA42 SMD
SMD MARKING CODE 12w
smd npn darlington
SMD CODE SOT89 lc
|
PDF
|
C-0120
Abstract: No abstract text available
Text: T F TMos Package Outlines - A - ► \ 1 C 1 i I t T t- E - * l •*— D 2 PL I s e a t in g p la n e NOTES. 1. DIM ENSIONING AND TOLERANCING PER ANSI Y14 5M, 1982 2 CONTROLLING DIMENSION INCH 3. ALL RULES AND NOTES ASSOCIATED WITH STYLE 3. PIN 1 GATE
|
OCR Scan
|
T0-204AA
C-0120
|
PDF
|
BFG591 amplifier
Abstract: BFM520 BFM505 BFC505 BFC520 BFE505 sot172 Philips Semiconductors Selection Guide bf763 S0T343
Text: Philips Semiconductors RF Wideband Transistors Selection guide FIRST GENERATION NPN WIDEBAND TRANSISTORS fT up to 3.5 GHz PACKAGE fT / l c CURVE (see Fig.1 ) LEADED SOT54 SURFACE-MOUNT SOT23 SOT89 SOT143 SOT223 SOT323 (1) BFT25 (2) BF747 BF547 BF547W BFS17
|
OCR Scan
|
BF689K
BF763
BFT25
BF747
BF547
BFS17
BFS17A
BFR53
BFQ17
BFG17A
BFG591 amplifier
BFM520
BFM505
BFC505
BFC520
BFE505
sot172
Philips Semiconductors Selection Guide
S0T343
|
PDF
|
BLY32
Abstract: blf278 108 amplifier Philips Application BLX15 RF Power Amplifiers bgy55 blw95 BLF543 BFQ43 BLW33 blf177 108 amplifier
Text: 83 RF/Microwave Devices Video Amplifiers Video Amplifier Line-Ups Application Preamp Stage B & W high resolution colour high resolution OM3016 OM925 OM975 OM3026 OM925 OM975 Output Stage OM976 Wideband Transistors for Application in Video Output Amplifiers in Monitors
|
OCR Scan
|
OM3016
OM3026
OM925
OM925
OM975
OM976
BFQ231
BFQ231A
BFQ251
BLY32
blf278 108 amplifier
Philips Application BLX15
RF Power Amplifiers
bgy55
blw95
BLF543
BFQ43
BLW33
blf177 108 amplifier
|
PDF
|
transistor tt 2222
Abstract: smd 809 x transistor transistor SMD S33
Text: N AUER PHILIPS/DISCRETE •. b'lE T> m bbSBSBl 0DSfl737 bOfl « A P X jg iiiiw n o u cto Kroouci specification BLT50 UHF pow er transistor FEATURES • SMD encapsulation • Gold metallization ensures
|
OCR Scan
|
0DSfl737
BLT50
OT223
bbS3R31
0DS87M3
transistor tt 2222
smd 809 x transistor
transistor SMD S33
|
PDF
|