bgy113f
Abstract: BGY113E SOT321 RF Power Modules BGY113G BGY204 BGY113B BGY133 SOT246 SOT342
Text: DISCRETE SEMICONDUCTORS DATA SHEET Selection guide RF Power Modules and Transistors for Mobile Phones 1996 Jun 19 File under Discrete Semiconductors, SC09 Philips Semiconductors RF Power Modules and Transistors for Mobile Phones Selection guide VHF CAR MOBILE
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OT132B
BGY143
BGY132
BGY133
BGY135
to174
bgy113f
BGY113E
SOT321
RF Power Modules
BGY113G
BGY204
BGY113B
BGY133
SOT246
SOT342
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"RF Power Modules"
Abstract: RF Power Modules MSA352 MM 4054 SC09 philips rf transistors modules RF index MLB442 sot132 sot278
Text: DISCRETE SEMICONDUCTORS DATA SHEET Package outlines RF Power Modules and Transistors for Mobile Phones Product specification File under Discrete Semiconductors, SC09 1996 May 29 Philips Semiconductors Product specification RF Power Modules and Transistors for
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OT96-1.
MBC180
OT421A.
MSA482
OT434A.
MSA490
"RF Power Modules"
RF Power Modules
MSA352
MM 4054
SC09
philips rf transistors
modules RF index
MLB442
sot132
sot278
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MBH302
Abstract: BGY110F BGY110G 110E 110G BGY110D BGY110E SC09 C900F sot246
Text: DISCRETE SEMICONDUCTORS DATA SHEET BGY110D; BGY110E; BGY110F; BGY110G UHF amplifier modules Product specification Supersedes data of May 1992 File under Discrete Semiconductors, SC09 1996 May 06 Philips Semiconductors Product specification BGY110D; BGY110E;
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BGY110D;
BGY110E;
BGY110F;
BGY110G
OT246
MBH302
BGY110F
BGY110G
110E
110G
BGY110D
BGY110E
SC09
C900F
sot246
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BGY110D
Abstract: BGY110E 110E 110G BGY110F BGY110G MBH304 Amplifier Modules
Text: Product specification Philips Semiconductors BGY110D; BGY110E; BGY110F; BGY110G UHF amplifier modules PINNING - SOT246 FEATURES • 7.2 V nominal supply voltage DESCRIPTION PIN • 1.7 W output power 1 RF input/Vc • Easy control of output power by DC voltage.
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BGY110D;
BGY110E;
BGY110F;
BGY110G
OT246
BGY110D,
OT246
711DflSt
D1D5455
BGY110D
BGY110E
110E
110G
BGY110F
BGY110G
MBH304
Amplifier Modules
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BGY110G
Abstract: 928 transistor
Text: Product specification Philips Sem iconductors BGY110D; BGY110E; BGY110F; BGY110G UHF amplifier modules FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC09 OR DATA SHEET DESCRIPTION PINNING - SOT246 The BGY110 is a four-stage UHF am plifier m odule, prim arily designed
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BGY110D;
BGY110E;
BGY110F;
BGY110G
BGY110
BGY110D,
110Fand
BGY110D
BGY110E
BGY110F
BGY110G
928 transistor
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UHF amplifier module
Abstract: BGY110F uhf amplifier design transistor CD 910 905-890 SL 100 NPN Transistor uhf amplifier 110G BGY110D BGY110E
Text: Product specification Philips Semiconductors , 1U_ . . . UHF amplifier modules BGY110D; BGY110E; BGY110F; BGY110G PINNING - SOT246 DESCRIPTION The BGY110 is a four-stage UHF amplifier module, primarily designed for hand-held transmitting equipment operating from a nominal
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BGY110D;
BGY110E;
BGY110F;
BGY110G
BGY110
BGY110D,
OT246facturer
UHF amplifier module
BGY110F
uhf amplifier design
transistor CD 910
905-890
SL 100 NPN Transistor
uhf amplifier
110G
BGY110D
BGY110E
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Untitled
Abstract: No abstract text available
Text: RF Power Modules INDEX SELECTION GUIDE GENERAL CONTENTS Page 5 8 12 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
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C4382.
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Untitled
Abstract: No abstract text available
Text: DEVELOPMENT DATA BGY110B T h is d a ta sheet co n ta in s advance in fo rm a tio n and s p e c ific a tio n s are su b je ct to change w it h o u t n o tic e . UHF AMPLIFIER MODULE The BGY110B is a four-stage UHF am plifier module designed prim arily fo r hand-held transm itting
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BGY110B
BGY110B
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BGY116a
Abstract: fo-57C BGY114E
Text: 67 RF/Microwave Devices RF Power Am plifier M odules co n t. The P h ilip s range in clu d e s RF p o w er m o d u le s inte nded p rim a rily for V H F/U H F m o b ile radio sy stem s and U H F/SH F ce llu la r radio. Th ese m o d u le s save co n sid e ra b le de sign effort and
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BGY110G
BGY95A
BGY95B
BGY96B
BGY114A
BGY114B
BGY114C
BGY114D
BGY114E
BGY116A
fo-57C
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BGY110F
Abstract: Amplifier Modules PHILIPS UHF AMPLIFIER MODULE LIST FERROXCUBE 4330 BGY110D MCB102
Text: Philips Components Datasheet status Product specification date of issue May 1991 BGY110D/BGY110E/BGY110F UHF amplifier modules DESCRIPTION MECHANICAL DATA The BGY110 is afour-stage UHF amplifier module, primarily designed for hand-held transmitting equipment
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BGY110D/BGY110E/BGY110F
BGY110
BGY110D,
OT246
BGY110E,
BGY110F.
BGY110D/BGY110E/BG
Y110F
7Z26281
BGY110F
Amplifier Modules
PHILIPS UHF AMPLIFIER MODULE LIST
FERROXCUBE 4330
BGY110D
MCB102
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Philips 9708
Abstract: sot248 philips HE 4071 BP T313-2 T-238
Text: Philips Semiconductors Package outlines OIP8: plastic dual in-line package; 8 leads 300 mil 1 1 • » 5 ■ I SOT97-1 10 mm ■ ■ I ■ » scale DIM ENSIONS (inch dim ensions are derived from the original mm dim ensions) UNIT A max. Ai min. A2 max. b
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OT97-1
050G01
MO-001
OT355-1
MO-153AD
Philips 9708
sot248
philips HE 4071 BP
T313-2
T-238
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BGY110A
Abstract: 40801 NPN planar RF transistor 824 transistor
Text: D EVELO PM EN T DATA 41E: • T llG Ô E b 0026457 h B IP H IN 11 BGY110A Jl T h is data sheet c o n ta in s a dvance in fo rm a tio n a n d sp e cific atio n s are sub{ect to cha nge w it h o u t notice. P H IL IP S INTERNATIONAL T -7 Y ~ 0 M UHF A M P L IF IE R M O D U L E
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BGY110A
BGY110A
ope24
40801
NPN planar RF transistor
824 transistor
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RF Power Modules
Abstract: BGY47 Philips Semiconductors RF Power Modules BGY145B BGY110E SOT-246 BGY110F "RF Power Modules" GP 132
Text: Philips Semiconductors RF power modules Type number survey INTRODUCTION In this alphanumeric list we present all RF power modules mentioned in this handbook, together with the most important data. TYPE NUMBER ENVELOPE Vs V f Pl (MHz) (W) Gp (dB) PAGE BGY32
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BGY32
BGY33
BGY35
BGY36
BGY43
BGY46A
BGY46B
BGY47A
BGY95A
BGY95B
RF Power Modules
BGY47
Philips Semiconductors RF Power Modules
BGY145B
BGY110E
SOT-246
BGY110F
"RF Power Modules"
GP 132
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bTE ]> • bbS3T31 QD3Q2bfl 347 r n m p s u o m p o n e n ts D atash eet status Product specification date o f issue May 1991 BGY110D/BGY110E/BGY110F UHF amplifier modules DESCRIPTION MECHANICAL DATA The BGY110 is a four-stage UHF amplifier module, primarily designed
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bbS3T31
BGY110D/BGY110E/BGY110F
BGY110
OT246
BGY110D,
BGY110E,
BGY110F.
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BGY110A
Abstract: transistor 824 SOT-246 sot246 sot 24-6 3101I
Text: IAPX bbS3131 0G3D S b 4 7T1 I D E V E L O P M E N T DATA This data sheet contains advance information and specifications are subject to change w ithout notice. BGY110A N AMER P H I L I P S / D I S C R E T E b lE » UHF AMPLIFIER MODULE The BG Y 1 1 0A is a four-stage U HF amplifier module designed primarily for hand-held transmitting
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Y110A
BGY110A
transistor 824
SOT-246
sot246
sot 24-6
3101I
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ic8085
Abstract: MCS103 BGY110F ferroxcube Ee core IC808 MCB088 905-890 BGY11 uhf amplifier UHF amplifier module
Text: N AUER PHILIPS/DISCRETE rnmps uomponents Datasheet status Product specification date of issue May 1991 bTE ]> • 1^ 33^31 DD302bû 347 * A P X BGY110D/BGY110E/BGY110F UHF amplifier modules DESCRIPTION MECHANICAL DATA The BGY110 is a four-stage UHF amplifier module, primarily designed
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QD30Ebfl
Y110D/BG
Y110E/BGY110F
BGY110
OT246
BGY110D,
MCB105
BGY110E,
BGY110F.
ic8085
MCS103
BGY110F
ferroxcube Ee core
IC808
MCB088
905-890
BGY11
uhf amplifier
UHF amplifier module
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Philips Semiconductors RF Power Modules
Abstract: RF Power Modules Philips Semiconductors Selection Guide BGY110E "RF Power Modules"
Text: Philips Semiconductors RF power modules Selection guide INTRODUCTION The following tables represent our complete range of RF power modules. VHF modules for mobile transminers f MHz Pl (W) Vs (V) 18 12.5 68 to 88 18 12.5 80 to 108 18 12.5 132 to 156 18 12.5
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OT132B
OT288C
OT183A
Philips Semiconductors RF Power Modules
RF Power Modules
Philips Semiconductors Selection Guide
BGY110E
"RF Power Modules"
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