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    BGY110E Price and Stock

    Philips Semiconductors BGY110E

    RF/MICROWAVE AMPLIFIER, HYBRID
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    Quest Components BGY110E 2
    • 1 $20.6996
    • 10 $20.6996
    • 100 $20.6996
    • 1000 $20.6996
    • 10000 $20.6996
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    ComSIT USA BGY110E 2,100
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    NXP Semiconductors BGY110E

    NARROW BAND MEDIUM POWER; Maximum Operating Temperature: 90 Cel; Maximum Voltage Standing Wave Ratio: 2; Characteristic Impedance: 50 ohm; Gain: 32.3 dB; Maximum Operating Frequency: 905 MHz;
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian BGY110E 122
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    BGY110E Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BGY110E Philips Semiconductors UHF amplifier module Original PDF
    BGY110E Philips Semiconductors UHF Amplifier Module Original PDF
    BGY110E Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BGY110E Philips Semiconductors UHF amplifier module Scan PDF
    BGY110E Philips Semiconductors UHF amplifier modules Scan PDF

    BGY110E Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MBH302

    Abstract: BGY110F BGY110G 110E 110G BGY110D BGY110E SC09 C900F sot246
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BGY110D; BGY110E; BGY110F; BGY110G UHF amplifier modules Product specification Supersedes data of May 1992 File under Discrete Semiconductors, SC09 1996 May 06 Philips Semiconductors Product specification BGY110D; BGY110E;


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    BGY110D; BGY110E; BGY110F; BGY110G OT246 MBH302 BGY110F BGY110G 110E 110G BGY110D BGY110E SC09 C900F sot246 PDF

    bgy113f

    Abstract: BGY113E SOT321 RF Power Modules BGY113G BGY204 BGY113B BGY133 SOT246 SOT342
    Text: DISCRETE SEMICONDUCTORS DATA SHEET Selection guide RF Power Modules and Transistors for Mobile Phones 1996 Jun 19 File under Discrete Semiconductors, SC09 Philips Semiconductors RF Power Modules and Transistors for Mobile Phones Selection guide VHF CAR MOBILE


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    OT132B BGY143 BGY132 BGY133 BGY135 to174 bgy113f BGY113E SOT321 RF Power Modules BGY113G BGY204 BGY113B BGY133 SOT246 SOT342 PDF

    BGY110D

    Abstract: BGY110E 110E 110G BGY110F BGY110G MBH304 Amplifier Modules
    Text: Product specification Philips Semiconductors BGY110D; BGY110E; BGY110F; BGY110G UHF amplifier modules PINNING - SOT246 FEATURES • 7.2 V nominal supply voltage DESCRIPTION PIN • 1.7 W output power 1 RF input/Vc • Easy control of output power by DC voltage.


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    BGY110D; BGY110E; BGY110F; BGY110G OT246 BGY110D, OT246 711DflSt D1D5455 BGY110D BGY110E 110E 110G BGY110F BGY110G MBH304 Amplifier Modules PDF

    BGY110F

    Abstract: Amplifier Modules PHILIPS UHF AMPLIFIER MODULE LIST FERROXCUBE 4330 BGY110D MCB102
    Text: Philips Components Datasheet status Product specification date of issue May 1991 BGY110D/BGY110E/BGY110F UHF amplifier modules DESCRIPTION MECHANICAL DATA The BGY110 is afour-stage UHF amplifier module, primarily designed for hand-held transmitting equipment


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    BGY110D/BGY110E/BGY110F BGY110 BGY110D, OT246 BGY110E, BGY110F. BGY110D/BGY110E/BG Y110F 7Z26281 BGY110F Amplifier Modules PHILIPS UHF AMPLIFIER MODULE LIST FERROXCUBE 4330 BGY110D MCB102 PDF

    BGY110G

    Abstract: 928 transistor
    Text: Product specification Philips Sem iconductors BGY110D; BGY110E; BGY110F; BGY110G UHF amplifier modules FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC09 OR DATA SHEET DESCRIPTION PINNING - SOT246 The BGY110 is a four-stage UHF am plifier m odule, prim arily designed


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    BGY110D; BGY110E; BGY110F; BGY110G BGY110 BGY110D, 110Fand BGY110D BGY110E BGY110F BGY110G 928 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE bTE ]> • bbS3T31 QD3Q2bfl 347 r n m p s u o m p o n e n ts D atash eet status Product specification date o f issue May 1991 BGY110D/BGY110E/BGY110F UHF amplifier modules DESCRIPTION MECHANICAL DATA The BGY110 is a four-stage UHF amplifier module, primarily designed


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    bbS3T31 BGY110D/BGY110E/BGY110F BGY110 OT246 BGY110D, BGY110E, BGY110F. PDF

    UHF amplifier module

    Abstract: BGY110F uhf amplifier design transistor CD 910 905-890 SL 100 NPN Transistor uhf amplifier 110G BGY110D BGY110E
    Text: Product specification Philips Semiconductors , 1U_ . . . UHF amplifier modules BGY110D; BGY110E; BGY110F; BGY110G PINNING - SOT246 DESCRIPTION The BGY110 is a four-stage UHF amplifier module, primarily designed for hand-held transmitting equipment operating from a nominal


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    BGY110D; BGY110E; BGY110F; BGY110G BGY110 BGY110D, OT246facturer UHF amplifier module BGY110F uhf amplifier design transistor CD 910 905-890 SL 100 NPN Transistor uhf amplifier 110G BGY110D BGY110E PDF

    ic8085

    Abstract: MCS103 BGY110F ferroxcube Ee core IC808 MCB088 905-890 BGY11 uhf amplifier UHF amplifier module
    Text: N AUER PHILIPS/DISCRETE rnmps uomponents Datasheet status Product specification date of issue May 1991 bTE ]> • 1^ 33^31 DD302bû 347 * A P X BGY110D/BGY110E/BGY110F UHF amplifier modules DESCRIPTION MECHANICAL DATA The BGY110 is a four-stage UHF amplifier module, primarily designed


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    QD30Ebfl Y110D/BG Y110E/BGY110F BGY110 OT246 BGY110D, MCB105 BGY110E, BGY110F. ic8085 MCS103 BGY110F ferroxcube Ee core IC808 MCB088 905-890 BGY11 uhf amplifier UHF amplifier module PDF

    Untitled

    Abstract: No abstract text available
    Text: RF Power Modules INDEX SELECTION GUIDE GENERAL CONTENTS Page 5 8 12 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.


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    C4382. PDF

    bf0262a

    Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
    Text: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A


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    1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A bf0262a BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94 PDF

    RF Power Modules

    Abstract: BGY47 Philips Semiconductors RF Power Modules BGY145B BGY110E SOT-246 BGY110F "RF Power Modules" GP 132
    Text: Philips Semiconductors RF power modules Type number survey INTRODUCTION In this alphanumeric list we present all RF power modules mentioned in this handbook, together with the most important data. TYPE NUMBER ENVELOPE Vs V f Pl (MHz) (W) Gp (dB) PAGE BGY32


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    BGY32 BGY33 BGY35 BGY36 BGY43 BGY46A BGY46B BGY47A BGY95A BGY95B RF Power Modules BGY47 Philips Semiconductors RF Power Modules BGY145B BGY110E SOT-246 BGY110F "RF Power Modules" GP 132 PDF

    SOT262

    Abstract: power amplifier blf278 BLF378 BGY47 321 SOT BGY145 sot183 BGY43 SOT246
    Text: 66 RF/Microwave Devices RF Power MOS Transistors Package Outline Type No. cont. Output Power Sync (W) VDS (V) f (MHz) Power Gain (dB) ^im (dB) >D (mA) 13 r -52 -52 3000 2 x 4600 50 TV TRANSPOSERS (band 3, f = 174-230 MHz, Class A Operation) BLF346 BLF348


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    BLF346 BLF348 OT-119, OT-262, BLF276 BLF278 BLF248 BLF368 BLF378 OT-119D3, SOT262 power amplifier blf278 BGY47 321 SOT BGY145 sot183 BGY43 SOT246 PDF

    Philips Semiconductors RF Power Modules

    Abstract: RF Power Modules Philips Semiconductors Selection Guide BGY110E "RF Power Modules"
    Text: Philips Semiconductors RF power modules Selection guide INTRODUCTION The following tables represent our complete range of RF power modules. VHF modules for mobile transminers f MHz Pl (W) Vs (V) 18 12.5 68 to 88 18 12.5 80 to 108 18 12.5 132 to 156 18 12.5


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    OT132B OT288C OT183A Philips Semiconductors RF Power Modules RF Power Modules Philips Semiconductors Selection Guide BGY110E "RF Power Modules" PDF