CLA80E1200HF
Abstract: No abstract text available
Text: CLA80E1200HF High Efficiency Thyristor VRRM = 1200 V I TAV = 80 A VT = 1.38 V Single Thyristor Part number CLA80E1200HF Backside: anode 2 1 3 Features / Advantages: Applications: Package: PLUS247 ● Thyristor for line frequency ● Planar passivated chip
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CLA80E1200HF
PLUS247
60747and
unl17
20121221b
CLA80E1200HF
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CLA80E1200HF
Abstract: No abstract text available
Text: CLA80E1200HF High Efficiency Thyristor VRRM = 1200 V I TAV = 80 A VT = 1.38 V Single Thyristor Part number CLA80E1200HF Backside: anode 2 1 3 Features / Advantages: Applications: Package: PLUS247 ● Thyristor for line frequency ● Planar passivated chip
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CLA80E1200HF
PLUS247
60747and
20121221b
CLA80E1200HF
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25N250
Abstract: IXBX25N250
Text: Preliminary Technical Information IXBX25N250 High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 2500V IC90 = 25A VCE sat ≤ 3.3V PLUS247TM (IXBX) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXBX25N250
PLUS247TM
25N250
IXBX25N250
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Untitled
Abstract: No abstract text available
Text: CS60-14io1 Thyristor VRRM = 1400 V I TAV = 60 A VT = 1.14 V Single Thyristor Part number CS60-14io1 Backside: anode 2 1 3 Features / Advantages: Applications: Package: PLUS247 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability
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CS60-14io1
PLUS247
60747and
20140122a
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Untitled
Abstract: No abstract text available
Text: IXSK 40N60BD1 IXSX 40N60BD1 IGBT with Diode PLUS247 TM package Short Circuit SOA Capability VCES IC25 VCE sat tfi(typ) = 600 = 75 = 2.2 = 120 V A V ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
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PLUS247
40N60BD1
40N60BD1
247TM
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IXTX24N100
Abstract: PLUS247 24N100
Text: Power MOSFET IXTX24N100 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = = ≤ 1000V 24A Ω 400mΩ PLUS247 Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous ±20 V VGSM Transient
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IXTX24N100
PLUS247
24N100
IXTX24N100
PLUS247
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TO-264
Abstract: 40N60BD1 PLUS247
Text: IXSK 40N60BD1 IXSX 40N60BD1 IGBT with Diode TM PLUS247 package Short Circuit SOA Capability VCES IC25 VCE sat tfi(typ) = 600 = 75 = 2.2 = 120 V A V ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
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40N60BD1
PLUS247
TO-264
40N60BD1
PLUS247
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Untitled
Abstract: No abstract text available
Text: CS 60 Phase Control Thyristor VRRM = 1200-1600 V IT RMS = 75 A IT(AV)M = 48 A Preliminary Data Sheet VRSM VRRM VDSM VDRM V V 1300 1500 1700 1200 1400 1600 PLUS247 Type A CS 60-12io1 CS 60-14io1 CS 60-16io1 IT(RMS) IT(AV)M TVJ = TVJM (lead current limit) TC = 105°C; 180° sine
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60-12io1
60-14io1
60-16io1
PLUS247
PLUS247TM
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PLUS247
Abstract: No abstract text available
Text: CS 60 Phase Control Thyristor VRSM VRRM VDSM VDRM V V 1300 1500 1700 1200 1400 1600 VRRM = 1200-1600 V IT RMS = 75 A IT(AV)M = 48 A Part Number PLUS247 A C CS 60-12io1 CS 60-14io1 CS 60-16io1 C A G G A (TAB) C = Cathode, A = Anode, G = Gate Symbol Test Conditions
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PLUS247
60-12io1
60-14io1
60-16io1
PLUS247
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PLUS247
Abstract: No abstract text available
Text: CS 60 Phase Control Thyristor VRRM = 1200-1600 V IT RMS = 75 A IT(AV)M = 48 A Preliminary Data Sheet VRSM VRRM VDSM VDRM V V 1300 1500 1700 1200 1400 1600 PLUS247 Type A C A G G A (TAB) CS 60-12io1 CS 60-14io1 CS 60-16io1 C = Cathode, A = Anode, G = Gate
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PLUS247
60-12io1
60-14io1
60-16io1
PLUS247
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Untitled
Abstract: No abstract text available
Text: Power MOSFET VDSS ID25 IXTX24N100 RDS on N-Channel Enhancement Mode Avalanche Rated = = ≤ 1000V 24A Ω 400mΩ PLUS247 Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous ±20 V VGSM Transient
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IXTX24N100
PLUS247
24N100
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Untitled
Abstract: No abstract text available
Text: CS60-12io1 Thyristor VRRM = 1200 V I TAV = 60 A VT = 1.14 V Single Thyristor Part number CS60-12io1 Backside: anode 2 1 3 Features / Advantages: Applications: Package: PLUS247 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability
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CS60-12io1
PLUS247
60747and
20140122a
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IXTX24N100
Abstract: PLUS247 J 115 mosfet
Text: Power MOSFET IXTX24N100 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = = ≤ 1000V 24A Ω 400mΩ PLUS247 (IXTX) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous
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IXTX24N100
PLUS247
24N100
10-17-08-C
IXTX24N100
PLUS247
J 115 mosfet
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transistor 12n60c
Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 PLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 PLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages PLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design
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ISOPLUS247TM
ISOPLUS247TM
PLUS247TM-package
FBO16-08N
FBE22-06N1
21-05QC
22-08N
75-01F
21-08i01
transistor 12n60c
12N60c equivalent
30N120D1
13N50 equivalent
12n60c
MOSFET 1200v 30a
MOSFET 1000v 30a
30n120d
CS20-22MOF1
12N60c MOSFET
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C1162
Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)
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O-247
PLUS247
ISOPLUS247TM
O-204
O-268
O-264
76N06-11
76N06-12
80N06
180N06
C1162
C1280
26n60
60N25
C1328
120N20
C1146
C1104
C1158
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Untitled
Abstract: No abstract text available
Text: IGBT with Diode IXSK 50N60BU1 IXSX 50N60BU1 VCES IC25 VCE sat = 600 V = 75 A = 2.5 V Short Circuit SOA Capability PLUS247 (IXSX) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous
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50N60BU1
50N60BU1
PLUS247
O-264
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Untitled
Abstract: No abstract text available
Text: IGBT with Diode IXSK 50N60BU1 IXSX 50N60BU1 VCES IC25 VCE sat = 600 V = 75 A = 2.5 V Short Circuit SOA Capability PLUS247 (IXSX) Symbol Test Conditions Maximum Ratings C (TAB) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES
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50N60BU1
PLUS247
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Untitled
Abstract: No abstract text available
Text: CS60-12io1 Thyristor VRRM = 1200 V I TAV = 60 A VT = 1.14 V Single Thyristor Part number CS60-12io1 Backside: anode 2 1 3 Features / Advantages: Applications: Package: PLUS247 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability
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CS60-12io1
PLUS247
60747and
20140122a
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cs60
Abstract: No abstract text available
Text: CS60-14io1 Thyristor VRRM = 1400 V I TAV = 60 A VT = 1.14 V Single Thyristor Part number CS60-14io1 Backside: anode 2 1 3 Features / Advantages: Applications: Package: PLUS247 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability
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CS60-14io1
PLUS247
60747and
20140122a
cs60
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Untitled
Abstract: No abstract text available
Text: nixYS IGBT with Diode IXSK 50N60BU1 IXSX 50N60BU1 VCES ^C25 VCE sat = 600 V = 75 A = 2.5 V Short Circuit SOA Capability PLUS247 (IXSX) Symbol Test Conditions v CES ^ 600 V v C0R T j = 25° C to 150° C; RGE= 1 600 V v BES Continuous ±20 V VGEM Transient
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50N60BU1
50N60BU1
to150
PLUS247TM
O-264AA
IXSX50N60BU1
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T0263
Abstract: T0-263 IXSH25N120A IXSH30N60C IXSH15N120B
Text: Insulated Gate Bipolar Transistors IGBT S series with SCSOA capability v’ ces mln V *C(25» A V WCE(SAT) max V % typ ns T0-220 (P) PLUS247 (X) TO-268(T) T0263(A) TO-247(H) T0-204<M) PLUS247T*I(R) SOT-227B(N) ♦ 4k ► Ne N TO-264<K) 4* LOW SATURATION VOLTAGE TYPES
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T0-220
PLUS247TM
O-268
IS0PLUS247T
OT-227B
T0263
O-247
IXSA16N60
IXSP16N60
IXSH24N60
T0-263
IXSH25N120A
IXSH30N60C
IXSH15N120B
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diode u2 40
Abstract: 48 H diode DIODE U2 70 IXSH24N60AU1 IXSN35N120AU1 IXSN35N100U1 IXSX35N120AU1 h 48 diode diode u2 34 ixsn80n60
Text: Discrete IGBT with Fast Diode u^aHighs IGBT/Diode Combi-Pack S series with SCSOA capability tQBTs=su^ *q25 Vcss min V A V CE SAT) max V TO-247(H) V TO-268AA (T) TO-264 (K) SOT-227B (N> typ ns PLUS247 (X) Case style * ► N eiV PLUS247™ (R) Case style
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O-264
O-247
O-268AA
OT-227B
PLUS247TM
ISOPLUS247TM
IXSH24N60BD1
IXSH30N60U1
IXSN62N60U1
IXSN35N100U1*
diode u2 40
48 H diode
DIODE U2 70
IXSH24N60AU1
IXSN35N120AU1
IXSN35N100U1
IXSX35N120AU1
h 48 diode
diode u2 34
ixsn80n60
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Untitled
Abstract: No abstract text available
Text: □ IX Y S Advanced Technical Information IXSK 40N60CD1 IXSX 40N60CD1 IGBT with Diode PLUS247 package ^fi typ V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C, limited by leads
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40N60CD1
PLUS247â
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ixgr32n60cd1
Abstract: IXGT-32N60BD1 IXGH32N60CD1 IXGH24N60CD1 IXGH17N100AU1 IXGK50N60BD1 IXGH24N60BD1 IXGH40N30BD ixgh15n120cd1 IXGH32N60
Text: Discrete IGBTs with FRED Diode U r u G series *C<25> min V A v T0-220(P CSH5A.T) max V typ ne PLUS247 (X) TO-268(T) PLUS247™(R) TO-247(H) T0-204(M) TO-264(K) SOT-227B(N) J0* TO-263(A) ► NetV LOW SATURATION VOLTAGE TYPES 600 1000 40 2.0 200 IXGH28N60D1
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O-268
ISOPLUS247TM
OT-227B
T0-220
PLUS247TM
O-263
O-247
T0-204
O-264
IXGA12N100U1
ixgr32n60cd1
IXGT-32N60BD1
IXGH32N60CD1
IXGH24N60CD1
IXGH17N100AU1
IXGK50N60BD1
IXGH24N60BD1
IXGH40N30BD
ixgh15n120cd1
IXGH32N60
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