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    PMD16K100 Search Results

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    PMD16K100 Price and Stock

    Solid State Devices Inc (SSDI) PMD16K100

    Bjt, Npn, 80V, To-3; Transistor Polarity:Npn; Collector Emitter Voltage V(Br)Ceo:100V; Power Dissipation Pd:225W; Dc Collector Current:20A; Rf Transistor Case:To-3; No. Of Pins:3Pins; Dc Current Gain Hfe:1000Hfe; Product Range:- Rohs Compliant: Yes |Solid State PMD16K100
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark PMD16K100 Bulk 25
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    Bristol Electronics PMD16K100 52
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    Quest Components PMD16K100 41
    • 1 $4.71
    • 10 $3.454
    • 100 $3.14
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    Lamb Industries PMD16K100

    Bipolar Junction Transistor, Darlington, NPN Type, TO-3
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    Quest Components PMD16K100 15
    • 1 $13.5
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    PMD16K100 7
    • 1 $13.5
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    TDK-Lambda Corporation PMD16K100

    Bipolar Junction Transistor, Darlington, NPN Type, TO-3
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    Quest Components PMD16K100 14
    • 1 $6.87
    • 10 $3.435
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    PMD16K100 6
    • 1 $13.5
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    PMD16K100 2
    • 1 $12
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    Others PMD16K100

    Bipolar Junction Transistor, Darlington, NPN Type, TO-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components PMD16K100 1
    • 1 $12
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    PMD16K100 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PMD16K100 Central Semiconductor SILICON POWER DARLINGTON TRANSISTORS Scan PDF
    PMD16K100 LAMBDA Semiconductor Data Book V1 1988 Scan PDF
    PMD-16K-100 LAMBDA Voltage Regulator Data Book 1988 Scan PDF
    PMD16K-100 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    PMD16K100 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    PMD-16K-100 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    PMD16K100 Unknown Semiconductor Master Cross Reference Guide Scan PDF

    PMD16K100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor wr2

    Abstract: No abstract text available
    Text: <^£.mL-dondu.ctoi ^Pi ., {Jnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 PMD16K100 Silicon NPN Darlingtion Power Transistor DESCRIPTION • High DC current gain • Collector-Emitter Sustaining Voltage-


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    PDF PMD16K100 PMD17K100 100mA transistor wr2

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


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    PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    pmd10K80

    Abstract: PMD17K100 MJ-6503 MJ802 EQUIVALENT 2n6545 BDW52 BU208A BUW35 PMD10K40 BDX88
    Text: Power Transistors TO-3 Case TYPE NO. IC PD BVCBO BVCEO hFE V MIN (V) MIN MIN @ IC VCE(SAT) @ IC PNP (A) MAX (W) NPN 2N3055 MJ2955 15 115 100 60 5.0 - 10 10 117 160 140 20 70 3.0 2N3442 (A) MAX (V) MAX fT (A) (MHz) MIN 3.0 10 2.5 5.0 10 - 2N3713 2N3789


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    PDF 2N3055 MJ2955 2N3442 2N3713 2N3789 2N3714 2N3790 2N3715 2N3791 2N3716 pmd10K80 PMD17K100 MJ-6503 MJ802 EQUIVALENT 2n6545 BDW52 BU208A BUW35 PMD10K40 BDX88

    2N5875

    Abstract: BDX85C LM3661TL-1.40 BU208 2N5886 BDW52B
    Text: Power Transistors TO-3 Case TYPE NO. IC PD BVCBO BVCEO hFE V MIN (V) MIN MIN @ IC VCE(SAT) @ IC PNP (A) MAX (W) NPN 2N3055 MJ2955 15 115 100 60 5.0 - 10 10 117 160 140 20 70 3.0 2N3442 (A) MAX (V) MAX fT (A) (MHz) MIN 3.0 10 2.5 5.0 10 - 2N3713 2N3789


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    PDF BUY69C MJ802 MJ1000 MJ1001 MJ3000 MJ3001 MJ4033 MJ4034 MJ4035 2N5875 BDX85C LM3661TL-1.40 BU208 2N5886 BDW52B

    17K60

    Abstract: 300 W npn darlington power transistors PMD17K pmd16k100 17K80
    Text: PMD16K SERIES PMD17K SERIES NPN PNP w w w. c e n t r a l s e m i . c o m COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR PMD16K, PMD17K series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process,


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    PDF PMD16K PMD17K PMD16K, PMD16K60 PMD17K60 PMD16K80 PMD17K80 PMD16K100 PMD17K100 17K60 300 W npn darlington power transistors 17K80

    DK53

    Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513
    Text: BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240


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    PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513

    PMD10K100

    Abstract: PMD12K40 MJ802 MJ4502 MJ11016 MJ802-MJ4502 MJ10012 PMD12K100 PMD13K100 PMD16K100 PMD11K60
    Text: Power Transistors TO-3 Case Continued TYPE NO. NPN PNP BUY69C IC PD (A) MAX (W) BVCBO BVCEO (V) MIN (V) MIN *TYP hFE @ IC VCE(SAT) @ IC (A) MIN MAX (V) MAX (A) fT *TYP (MHz) MIN 10 100 500 200 15 - 2.5 3.3 8.0 10* MJ802 MJ4502 30 200 100 90 25 100 7.5 0.8


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    PDF BUY69C MJ802 MJ4502 MJ1000 MJ1001 MJ3000 MJ2500 MJ3001 MJ2501 MJ4000 PMD10K100 PMD12K40 MJ802 MJ4502 MJ11016 MJ802-MJ4502 MJ10012 PMD12K100 PMD13K100 PMD16K100 PMD11K60

    MJ6503

    Abstract: PMD10K100 MJ1000 MJ4502 EQUIVALENT PMD16K100 PMD1703K PMD17K100 MJ10012 MJ802 PMD10K40
    Text: Power Transistors TO-3 Case Continued TYPE NO. NPN IC PNP BUY69C (A) MAX PD BVCBO BVCEO *BVCEV (W) (V) (V) MIN MIN hFE @ IC VCE(SAT) @ IC (A) MIN MAX (V) MAX (A) fT *TYP (MHz) MIN 10 100 500 200 15 - 2.5 3.3 8.0 10* MJ802 MJ4502 30 200 100 90 25 100 7.5


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    PDF BUY69C MJ802 MJ4502 MJ1000 MJ1001 MJ3000 MJ2500 MJ3001 MJ2501 MJ4033 MJ6503 PMD10K100 MJ1000 MJ4502 EQUIVALENT PMD16K100 PMD1703K PMD17K100 MJ10012 MJ802 PMD10K40

    PMD16K100

    Abstract: PMD16K80 PMD16K60 PMD-16K-100 MIL-STD 833 test method 3015
    Text: Inchange Semiconductor Product Specification PMD16K60/80/100 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High DC current gain ・DARLINGTON APPLICATIONS ・Designed for use in power switching application. PINNING See Fig.2 PIN DESCRIPTION


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    PDF PMD16K60/80/100 PMD16K60 PMD16K100 PMD16K80 PMD16K100 PMD16K80 PMD16K60 PMD-16K-100 MIL-STD 833 test method 3015

    LM3661TL-1.40

    Abstract: BUW36 2N6253 2n6545
    Text: Power Transistors TO-3 Case TYPE NO. IC PD BVCBO BVCEO hFE V MIN (V) MIN MIN @ IC VCE(SAT) @ IC PNP (A) MAX (W) NPN 2N3055 MJ2955 15 115 100 60 5.0 - 10 10 117 160 140 20 70 3.0 2N3442 (A) MAX (V) MAX fT (A) (MHz) MIN 3.0 10 2.5 5.0 10 - 2N3713 2N3789


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    PDF BUY69C MJ802 MJ1000 MJ1001 MJ3000 MJ3001 MJ4033 MJ4034 MJ4035 LM3661TL-1.40 BUW36 2N6253 2n6545

    THINKI transistor catalog

    Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
    Text: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003


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    PDF 2SA914 O-126 2SA900 2SC2556 2SC2556A LM317K O-220 LM317T THINKI transistor catalog audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747

    STRS6307

    Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
    Text: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173


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    PDF 2N3054 2N32741 2N4240 2N4908 2N3054A 2N3766 2N4273 2N4909 2N3055 2N3767 STRS6307 STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020

    DK53

    Abstract: dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037
    Text: Bipolar Transistors Cross Reference INDUSTY STANDARD 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240


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    PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037

    NPN Transistor 2N3055 darlington

    Abstract: lambda LAS PMD 1000 stc transistors series 2N3055 4D ic 810 2N3055 series voltage regulator 2N3055 PMD12K40 2N3055-2
    Text: • High power, high gain Darlington transistors • VcEO 40V, 60V, 80V, 100V PMD 10K,11K,12K,13K, 16K,17K Darlington transistors CASE T E M P E R A T U R E T c 75°C • The only glass passivated 200°C operating junction tem perature Darlington power transistor range


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    PDF PMD10K 16amps, PMD-13 PMD-11 PMD-17 NPN Transistor 2N3055 darlington lambda LAS PMD 1000 stc transistors series 2N3055 4D ic 810 2N3055 series voltage regulator 2N3055 PMD12K40 2N3055-2

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    lambda pmd16k100

    Abstract: PMD17K100 PMD17K80 PMD16K100 PMD16K PMD16K80 PMD17K PMD17K60 PMD-17K-100
    Text: Data Sheet Central" PMD16K SERIES PMD17K SERIES NPN PNP SILICON POWER DARLINGTON TRANSISTORS Semiconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T0-3 CASE Manufacturers of World Class Discrete Semiconductors


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    PDF PMD16K PMD17K PMD16K/PMD17K 100mA PMD16k60 PMD17K60) PMD16K80 lambda pmd16k100 PMD17K100 PMD17K80 PMD16K100 PMD17K60 PMD-17K-100

    pmd12k-40

    Abstract: 2n6543 bu208 2n3713 LM3661TL-1.40
    Text: Power Transistors Ir " -— y i TO-3 Case TYPE NO. •c PD @ lc hpE BVc b O BVc e o v c e s a t) *c *TYP (A) NPN 2N3055 PNP MJ2955 2N3442 m MAX *T ‘ TYP (V) (V) MIN MIN MIN MAX (A) (V) (A) MAX (MHZ) MIN 15 115 100 60 5.0 — 10 3.0 10 2.5 10 117 160


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    PDF 2N3055 2N3442 2N3713 2N3714 2N3715 2N3716 2N3771 2N3772 2N3773 2N4913 pmd12k-40 2n6543 bu208 LM3661TL-1.40

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors TO-3 Case Continued TYPE NO. 'c Pd bvCBO BVceo @ hpE lc v CE(SAT) @|c *TYP ‘TYP (A) NPN PNP BUY69C (W) MAX 00 (V) MIN MIN (A) (V) (A) MAX (MHZ) MIN MAX MIN 2.5 3.3 8.0 10* 10 100 500 200 15 . 30 200 100 90 25 100 7.5 0.8 7.5 2.0 60


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    PDF BUY69C MJ802 MJ4502 MJ1000 MJ1001 MJ3000 MJ2500 MJ3001 MJ2501 NM4033

    J901

    Abstract: PMD1602K PMD16K100 PMD12K60
    Text: Power Transistors TO-3 Case Continued TYPE NO. •e PD bvc b o hpE V cS O @ ic VCE(SAT) @*c TYP (A) NPN PN P BUY69C (W) MAX *TYP (V) (V) MIN UH M m in MIN MAX 2.5 3.3 8.0 10* (A) (V) (A) MAX (MHZ) MIN 10 100 500 200 15 . MJ802 MJ4502 30 200 100 90 25


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    PDF BUY69C MJ802 MJ1000 MJ1001 MJ3000 MJ3001 MJ4033 MJ4Q34 MJ4035 MJ10012 J901 PMD1602K PMD16K100 PMD12K60

    BTA08-600C equivalent

    Abstract: BTA16-600B equivalent BDW84C equivalent TYN 208 equivalent FR207 equivalent 2N3668 MDA2506 mda 2060 1n5399 equivalent 1N4465
    Text: index/cross Reference Industry Part Number Central Part Number Page Industry Part Number 1N 34A 118 1N 60 118 1N 67A Central Part Number Page Industry Part Number 1N 968B 122 1N2838B 129 1N 969B 122 1N2839B 129 118 1N 970B 122 1N2840B 129 1N 87A 118 1N 971B


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    PDF Z0409ME Z0409MF Z0409NE Z0409NF Z0410BE Z0410BF Z0410DE Z0410DF Z0410ME Z0410MF BTA08-600C equivalent BTA16-600B equivalent BDW84C equivalent TYN 208 equivalent FR207 equivalent 2N3668 MDA2506 mda 2060 1n5399 equivalent 1N4465

    MJ11016

    Abstract: PMD10K40 PMD1703K PMD18K100 pm010k60 pmd16k100
    Text: Power Transistors TO-3 Case Continued TYPE NO. 'c Pd BVc b o @ lc bvceo (A) NPN PNP BUY69C (W ) MAX 10 00 (V) MIN MIN *TYP (A) MIN (V) MAX (MHZ) (A) MAX 100 500 200 15 2.5 3.3 MJ802 MJ4502 30 200 100 90 25 100 7.5 MJ1000 M J 900 8.0 90 60 60 1,000 . 3.0


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    PDF buy69c mj802 mj4502 mj1000 mj1001 mj3000 mj2500 mj3001 mj2501 mj4033 MJ11016 PMD10K40 PMD1703K PMD18K100 pm010k60 pmd16k100

    LM3661TL-1.40

    Abstract: 2N6057
    Text: Power Transistors TO-3 Case TYPE NO. <c pD BVc b o B V c io @ lc VCE SAT @ <c *TYP NPN 2N3055 PNP MJ2955 2N3442 (A) MAX m *T TYP m (V) MIN MIN MIN MAX (A) (V) (A) MAX (MHZ) MIN 15 115 100 60 5.0 . 10 3.0 10 2.5 10 117 160 140 20 70 3.0 5.0 10 . 2N3713


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    17K100

    Abstract: pmd16k100 D327D 17K80
    Text: SEMTECH CORP 53E V • Q0032bâ 2 ^ SET 225 WATT 20 AM P CONTINUOUS, 40 AM P PEAK ABSOLUTE MAXIMUM RATINGS PARAMETER FEATURES SYM BO L Collector Emitter Voltage PM D16K, 17K80 PM D16K, 17K100 V ce O Collector Base Voltage PM D16K, 17K80 PM D 16K, 17K100


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    PDF Q0032bâ 17K80 17K100 pmd16k100 D327D