PMOS MODEL PARAMETERS SPICE Search Results

PMOS MODEL PARAMETERS SPICE Result Highlights (5)

Part	Manufacturer	Description
ISL70061SEHVF	Renesas Electronics Corporation	Radiation Hardened 10A PMOS Load Switch
ISL73061SEHF/PROTO	Renesas Electronics Corporation	Radiation Hardened 10A PMOS Load Switch
ISL73061SEHVF	Renesas Electronics Corporation	Radiation Hardened 10A PMOS Load Switch
ISL70061SEHVX	Renesas Electronics Corporation	Radiation Hardened 10A PMOS Load Switch
ISL70061SEHF/PROTO	Renesas Electronics Corporation	Radiation Hardened 10A PMOS Load Switch

PMOS MODEL PARAMETERS SPICE Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
AN1403 Abstract: NMOS MODEL PARAMETERS SPICE PMOS MODEL PARAMETERS SPICE mj04 74ACxxx 74ACTXXX Text: AN1403 Application Note  I/O FACT Model Kit Prepared by Willard Tu FACT Applications Engineering This application note provides the SPICE information necessary to allow the customer to perform system level interconnect modelling for the Motorola FACT logic	Original	AN1403 AN1403/D BR1333 AN1403 NMOS MODEL PARAMETERS SPICE PMOS MODEL PARAMETERS SPICE mj04 74ACxxx 74ACTXXX	PDF
74ACxxx Abstract: mj04 AN1403 RSH120 MJ-04 AD259 NMOS MODEL PARAMETERS SPICE xj25 Text: AN1403/D FACT I/O Model Kit Prepared by: Willard Tu http://onsemi.com APPLICATION NOTE OBJECTIVE Transistor Parameters for Typical FACT Output Buffers The objective of providing a spice modelling kit is to allow the customer to perform system level interconnect	Original	AN1403/D 1599U 375E-4 875E-3 74ACxxx mj04 AN1403 RSH120 MJ-04 AD259 NMOS MODEL PARAMETERS SPICE xj25	PDF
4e16 Abstract: 25e5 4E-16 Text: AND8050/D SPICE Device Model NTHS5402T1 N–Channel 2.5 V G–S MOSFET http://onsemi.com APPLICATION NOTE CHARACTERISTICS DESCRIPTION • • • • • • The attached SPICE Model describes typical electrical characteristics of the p–channel vertical DMOS. The	Original	AND8050/D NTHS5402T1 r14525 AND8050/D 4e16 25e5 4E-16	PDF
eta mos Abstract: 20E-3 1100E 135E NTHS5445T1 Si5445DC PMOS MODEL PARAMETERS SPICE 85e4 Text: AND8049/D SPICE Device Model NTHS5445T1 P–Channel 1.8 V G–S MOSFET http://onsemi.com APPLICATION NOTE CHARACTERISTICS • • • • • • DESCRIPTION The attached SPICE Model describes typical electrical characteristics of the p–channel vertical DMOS. The	Original	AND8049/D NTHS5445T1 r14525 eta mos 20E-3 1100E 135E NTHS5445T1 Si5445DC PMOS MODEL PARAMETERS SPICE 85e4	PDF
Kappa Networks Abstract: 200E NTHD5905T1 Si5905DC NMOS MODEL PARAMETERS SPICE Text: AND8048/D SPICE Device Model NTHD5905T1 Dual P–Channel 1.8 V G–S MOSFET http://onsemi.com APPLICATION NOTE CHARACTERISTICS DESCRIPTION • • • • • • The attached SPICE Model describes typical electrical characteristics of the p–channel vertical DMOS. The	Original	AND8048/D NTHD5905T1 r14525 Kappa Networks 200E NTHD5905T1 Si5905DC NMOS MODEL PARAMETERS SPICE	PDF
Kappa Networks Abstract: Si5445DC 1100E 135E Text: AND8049/D SPICE Device Model NTHS55445T1 P–Channel 1.8 V G–S MOSFET http://onsemi.com APPLICATION NOTE CHARACTERISTICS • • • • • • DESCRIPTION The attached SPICE Model describes typical electrical characteristics of the p–channel vertical DMOS. The	Original	AND8049/D NTHS55445T1 r14525 Kappa Networks Si5445DC 1100E 135E	PDF
Kappa Networks Abstract: 240E NTHD5904T1 Si5904DC PMOS MODEL PARAMETERS SPICE 65E-3 65e3 Text: AND8047/D SPICE Device Model NTHD5904T1 Dual N–Channel 2.5 V G–S MOSFET http://onsemi.com APPLICATION NOTE CHARACTERISTICS DESCRIPTION • • • • • • The attached SPICE Model describes typical electrical characteristics of the n–channel vertical DMOS. The	Original	AND8047/D NTHD5904T1 r14525 Kappa Networks 240E NTHD5904T1 Si5904DC PMOS MODEL PARAMETERS SPICE 65E-3 65e3	PDF
25e5 Abstract: NMOS MODEL PARAMETERS SPICE 4e16 330E-12 Kappa Networks 330E Si5402DC 52E-3 Text: AND8050/D SPICE Device Model NTHS55445T1 N–Channel 2.5 V G–S MOSFET http://onsemi.com APPLICATION NOTE CHARACTERISTICS DESCRIPTION • • • • • • The attached SPICE Model describes typical electrical characteristics of the p–channel vertical DMOS. The	Original	AND8050/D NTHS55445T1 r14525 25e5 NMOS MODEL PARAMETERS SPICE 4e16 330E-12 Kappa Networks 330E Si5402DC 52E-3	PDF
Kappa Networks Abstract: 110E 7E17 NTHD5902T1 Si5902DC Text: AND8051/D SPICE Device Model NTHD5902T1 Dual N–Channel 30 V D–S MOSFET http://onsemi.com APPLICATION NOTE CHARACTERISTICS DESCRIPTION • • • • • • The attached SPICE Model describes typical electrical characteristics of the n–channel vertical DMOS. The	Original	AND8051/D NTHD5902T1 r14525 Kappa Networks 110E 7E17 NTHD5902T1 Si5902DC	PDF
PMOS MODEL PARAMETERS SPICE Abstract: PMOS k 815 MOSFET Si6923DQ Text: SPICE Device Model Si6923DQ P-Channel Rated MOSFET + Schottky Diode Characteristics • • • • • Applicable Over a -55 to 125 o C Temperature Range • Models Gate Charge, Transient and Diode Reverse P-Channel Vertical DMOS Macro-Model Subcircuit	Original	Si6923DQ 1E-05 PMOS MODEL PARAMETERS SPICE PMOS k 815 MOSFET	PDF
spice model solid state relay Abstract: solid state relay spice model swhyste lambda schematic los-7-15 llc converter spice model NMOS MODEL PARAMETERS SPICE relay spice model Text: SPICE Device Model Si4768CY Vishay Siliconix Si4768CY N-Channel Synchronous MOSFETs SCOPE This document contains a description of the SPICE model and test and application circuits for the Vishay SI4768CY N-Channel Synchronous MOSFETs with Break-Before-Make.	Original	Si4768CY includ-May-04 12-May-04 spice model solid state relay solid state relay spice model swhyste lambda schematic los-7-15 llc converter spice model NMOS MODEL PARAMETERS SPICE relay spice model	PDF
swhyste Abstract: TC-165 mosfet 260n 254p AEI Semiconductors Si4768CY Si4770CY diode M7 156n diode NMOS MODEL PARAMETERS SPICE Text: SPICE Device Model Si4770CY Vishay Siliconix SI4770CY N-Channel Synchronous MOSFETs SCOPE This document contains a description of the SPICE model and test and application circuits for the Vishay SI4770CY N-channel Synchronous MOSFETs with Break-Before-Make.	Original	Si4770CY 18-Jul-08 swhyste TC-165 mosfet 260n 254p AEI Semiconductors Si4768CY diode M7 156n diode NMOS MODEL PARAMETERS SPICE	PDF
op amp 741 model PSpice code Abstract: op amp 741 model PSpice DC-M4 diode AN4820 MAR 732 an4819 op amp 741 model Spice AN489 8741 substitution BF178 Text: Application Note 48 November 1991 Using the LTC Op Amp Macromodels Getting the Most from SPICE and the LTC Library Walt Jung INTRODUCTION This application note is an overview discussion of the Linear Technology SPICE macromodel library. It assumes little if any prior knowledge of this software library or its	Original	0000E 4332E 8000E-04 8506E-03 1000000E 1000005E op amp 741 model PSpice code op amp 741 model PSpice DC-M4 diode AN4820 MAR 732 an4819 op amp 741 model Spice AN489 8741 substitution BF178	PDF
G2-20P Abstract: delta rectifier all model AN1043 Si4724CY llc converter spice model converter spice model S50464 lambda schematic los-7-15 mosfet SPICE MODEL Text: SPICE Device Model Si4724CY Vishay Siliconix N-Channel Synchronous MOSFETs FUNCTIONAL DESCRIPTION The SI4724CY is a high-speed driver designed to operate in high frequency dc-dc switchmode power supplies. It is designed to be used with any single output PWM IC or ASIC to produce a highly	Original	Si4724CY 18-Jul-08 G2-20P delta rectifier all model AN1043 llc converter spice model converter spice model S50464 lambda schematic los-7-15 mosfet SPICE MODEL	PDF

XH035 Abstract: mos rm3 data nmos transistor 0.35 um MOS RM3 "X-Fab" Core cell library bsim3v3 jfet wn 428 PHVC polysilicon resistor bsim3 Text: 0.35 µm CMOS Process Family XH035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular Analog Mixed Signal Technology with RF capability and HV Extensions Description The XH035 series is X-FAB’s 0.35-micron Modular RF capable Mixed Signal Technology. Main target	Original	XH035 XH035 35-micron mos rm3 data nmos transistor 0.35 um MOS RM3 "X-Fab" Core cell library bsim3v3 jfet wn 428 PHVC polysilicon resistor bsim3	PDF
mosfet SPICE MODEL Abstract: G2-20P Si4724CY 21E16 llc converter spice model diode M022 AN1043 NMOS MODEL PARAMETERS SPICE 650N M0-22 Text: SPICE Device Model Si4724CY Vishay Siliconix N-Channel Synchronous MOSFETs FUNCTIONAL DESCRIPTION The SI4724CY is a high speed driver designed to operate in high frequency dc-dc switchmode power supplies. It is designed to be used with any single output PWM IC or ASIC to produce a highly	Original	Si4724CY 545u/4u) AN1043, 23-Jan-04 mosfet SPICE MODEL G2-20P 21E16 llc converter spice model diode M022 AN1043 NMOS MODEL PARAMETERS SPICE 650N M0-22	PDF
CMOS Abstract: hv 102 mos fet transistor varactor diode model in ADS bsim3 ADS varactor diode 0.18 micron 1.8V pspice model BSIM3V3 bsim3 model bsim3 model for 0.18 micron technology for hspice N-Channel jfet 100V depletion Text: 0.6 m CMOS Process XC06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Mixed Signal Technology Description Key Features The XC06 Series completes X-FAB‘s 0.6 Micron Modular Mixed Signal Technology with embedded Non Volatile Memory and High Voltage options.	Original		PDF
spice model Tunnel diode Abstract: dpsN TUNNEL DIODE spice model Text: 0.6 µm Process XT06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Trench Isolated SOI CMOS Technology Description The XT06 Series completes X-FAB's 0.6 Micron Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers. This allows unrestricted 60 V high and low side operation	Original		PDF
0.6 um cmos process Abstract: bsim3 Trench MOS Schottky Rectifier MICRON POWER RESISTOR Mos BSIM3 SOI pmos 60V-20 MICRON RESISTOR Mos MOS RM3 P-Channel Depletion Mosfets Text: 0.6 µm Process XT06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Trench Isolated SOI CMOS Technology Description The XT06 Series completes X-FAB's 0.6 Micron Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers. This allows unrestricted 60 V high and low side operation	Original		PDF
CMOS Abstract: MICRON RESISTOR Mos MOS RM3 power BJT PNP spice model spice gate drive module mos rm3 data ESD "p-well" n-well" CMOS spice model ne3 MOS3ST varactor diode SPICE model Text: 0.18 µm CMOS Process XC018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron Modular RF enabled CMOS Logic and Analog Technology 0.18-micron drawn gate length N-well process, modules are also available for metal-insulatormetal capacitors, high resistive poly, dual gate	Original	XC018 18-micron XC018 CMOS MICRON RESISTOR Mos MOS RM3 power BJT PNP spice model spice gate drive module mos rm3 data ESD "p-well" n-well" CMOS spice model ne3 MOS3ST varactor diode SPICE model	PDF
CMOS Abstract: pmos4 Text: 0.8 µm CMOS Process CX08 MIXED-SIGNAL FOUNDRY EXPERTS 0.8 Micron Modular Mixed Signal Technology Description The CX08 Series is X-FAB‘s 0.8 Micron Modular Mixed Signal Technology. Main target applications are standard cell, semi-custom and full custom designs for Industrial, Telecommunication and Automotive products - including the 42V board net.	Original		PDF
CMOS Abstract: AF32K8AF25 NMOS native pspice model resistor bsim3 6T SRAM micron cmos sensor connection BSIM3 nmos transistor pmos Vt bsim3 model Text: 0.25 m CMOS Process FC025 MIXED-SIGNAL FOUNDRY EXPERTS 0.25 Micron CMOS Technology Description Key Features Applications Quality Assurance Deliverables Digital Libraries Analog Libraries Primitive Devices The FC025 series is X-FAB’s 0.25-micron Modular	Original	FC025 FC025 25-micron CMOS AF32K8AF25 NMOS native pspice model resistor bsim3 6T SRAM micron cmos sensor connection BSIM3 nmos transistor pmos Vt bsim3 model	PDF
mos rm3 data Abstract: MOS RM3 BSIM3V3 XH035 RM4L bsim3 dw-mo MICRON POWER RESISTOR Mos Q100 analog devices transistor tutorials Text: 0.35 µm CMOS Process Family XA035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron High Temperature Modular CMOS Technology Description The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and	Original	XA035 XA035 35-micron XH035 mos rm3 data MOS RM3 BSIM3V3 RM4L bsim3 dw-mo MICRON POWER RESISTOR Mos Q100 analog devices transistor tutorials	PDF
bsim3 0.18 micron parameters Abstract: bsim3 model ESSDERC-98 Text: Impact of Process Scaling on 1/f Noise in Advanced CMOS Technologies MJ. Knitel, P.H. Woerlee, A.J. Schölten, and A.T.A. Zegers-Van Duijnhoven Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands phone: +31-40-2742723; fax: + 31-40-2743390; e-mail: andries.scholten@philips.com	OCR Scan	464-IEDM bsim3 0.18 micron parameters bsim3 model ESSDERC-98	PDF

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PMOS MODEL PARAMETERS SPICE Search Results

PMOS MODEL PARAMETERS SPICE Result Highlights (5)

PMOS MODEL PARAMETERS SPICE Datasheets Context Search

AN1403

74ACxxx

4e16

eta mos

Kappa Networks

Kappa Networks

Kappa Networks

25e5

Kappa Networks

PMOS MODEL PARAMETERS SPICE

spice model solid state relay

swhyste

op amp 741 model PSpice code

G2-20P

XH035

mosfet SPICE MODEL

CMOS

spice model Tunnel diode

0.6 um cmos process

CMOS

CMOS

CMOS

mos rm3 data

bsim3 0.18 micron parameters