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    PMOS MODEL PARAMETERS SPICE Search Results

    PMOS MODEL PARAMETERS SPICE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ISL70061SEHVF Renesas Electronics Corporation Radiation Hardened 10A PMOS Load Switch Visit Renesas Electronics Corporation
    ISL73061SEHF/PROTO Renesas Electronics Corporation Radiation Hardened 10A PMOS Load Switch Visit Renesas Electronics Corporation
    ISL73061SEHVF Renesas Electronics Corporation Radiation Hardened 10A PMOS Load Switch Visit Renesas Electronics Corporation
    ISL70061SEHVX Renesas Electronics Corporation Radiation Hardened 10A PMOS Load Switch Visit Renesas Electronics Corporation
    ISL70061SEHF/PROTO Renesas Electronics Corporation Radiation Hardened 10A PMOS Load Switch Visit Renesas Electronics Corporation

    PMOS MODEL PARAMETERS SPICE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN1403

    Abstract: NMOS MODEL PARAMETERS SPICE PMOS MODEL PARAMETERS SPICE mj04 74ACxxx 74ACTXXX
    Text: AN1403 Application Note  I/O FACT Model Kit Prepared by Willard Tu FACT Applications Engineering This application note provides the SPICE information necessary to allow the customer to perform system level interconnect modelling for the Motorola FACT logic


    Original     		PDF AN1403 AN1403/D BR1333 AN1403 NMOS MODEL PARAMETERS SPICE PMOS MODEL PARAMETERS SPICE mj04 74ACxxx 74ACTXXX

    74ACxxx

    Abstract: mj04 AN1403 RSH120 MJ-04 AD259 NMOS MODEL PARAMETERS SPICE xj25
    Text: AN1403/D FACT I/O Model Kit Prepared by: Willard Tu http://onsemi.com APPLICATION NOTE OBJECTIVE Transistor Parameters for Typical FACT Output Buffers The objective of providing a spice modelling kit is to allow the customer to perform system level interconnect


    Original     		PDF AN1403/D 1599U 375E-4 875E-3 74ACxxx mj04 AN1403 RSH120 MJ-04 AD259 NMOS MODEL PARAMETERS SPICE xj25

    4e16

    Abstract: 25e5 4E-16
    Text: AND8050/D SPICE Device Model NTHS5402T1 N–Channel 2.5 V G–S MOSFET http://onsemi.com APPLICATION NOTE CHARACTERISTICS DESCRIPTION • • • • • • The attached SPICE Model describes typical electrical characteristics of the p–channel vertical DMOS. The


    Original     		PDF AND8050/D NTHS5402T1 r14525 AND8050/D 4e16 25e5 4E-16

    eta mos

    Abstract: 20E-3 1100E 135E NTHS5445T1 Si5445DC PMOS MODEL PARAMETERS SPICE 85e4
    Text: AND8049/D SPICE Device Model NTHS5445T1 P–Channel 1.8 V G–S MOSFET http://onsemi.com APPLICATION NOTE CHARACTERISTICS • • • • • • DESCRIPTION The attached SPICE Model describes typical electrical characteristics of the p–channel vertical DMOS. The


    Original     		PDF AND8049/D NTHS5445T1 r14525 eta mos 20E-3 1100E 135E NTHS5445T1 Si5445DC PMOS MODEL PARAMETERS SPICE 85e4

    Kappa Networks

    Abstract: 200E NTHD5905T1 Si5905DC NMOS MODEL PARAMETERS SPICE
    Text: AND8048/D SPICE Device Model NTHD5905T1 Dual P–Channel 1.8 V G–S MOSFET http://onsemi.com APPLICATION NOTE CHARACTERISTICS DESCRIPTION • • • • • • The attached SPICE Model describes typical electrical characteristics of the p–channel vertical DMOS. The


    Original     		PDF AND8048/D NTHD5905T1 r14525 Kappa Networks 200E NTHD5905T1 Si5905DC NMOS MODEL PARAMETERS SPICE

    Kappa Networks

    Abstract: Si5445DC 1100E 135E
    Text: AND8049/D SPICE Device Model NTHS55445T1 P–Channel 1.8 V G–S MOSFET http://onsemi.com APPLICATION NOTE CHARACTERISTICS • • • • • • DESCRIPTION The attached SPICE Model describes typical electrical characteristics of the p–channel vertical DMOS. The


    Original     		PDF AND8049/D NTHS55445T1 r14525 Kappa Networks Si5445DC 1100E 135E

    Kappa Networks

    Abstract: 240E NTHD5904T1 Si5904DC PMOS MODEL PARAMETERS SPICE 65E-3 65e3
    Text: AND8047/D SPICE Device Model NTHD5904T1 Dual N–Channel 2.5 V G–S MOSFET http://onsemi.com APPLICATION NOTE CHARACTERISTICS DESCRIPTION • • • • • • The attached SPICE Model describes typical electrical characteristics of the n–channel vertical DMOS. The


    Original     		PDF AND8047/D NTHD5904T1 r14525 Kappa Networks 240E NTHD5904T1 Si5904DC PMOS MODEL PARAMETERS SPICE 65E-3 65e3

    25e5

    Abstract: NMOS MODEL PARAMETERS SPICE 4e16 330E-12 Kappa Networks 330E Si5402DC 52E-3
    Text: AND8050/D SPICE Device Model NTHS55445T1 N–Channel 2.5 V G–S MOSFET http://onsemi.com APPLICATION NOTE CHARACTERISTICS DESCRIPTION • • • • • • The attached SPICE Model describes typical electrical characteristics of the p–channel vertical DMOS. The


    Original     		PDF AND8050/D NTHS55445T1 r14525 25e5 NMOS MODEL PARAMETERS SPICE 4e16 330E-12 Kappa Networks 330E Si5402DC 52E-3

    Kappa Networks

    Abstract: 110E 7E17 NTHD5902T1 Si5902DC
    Text: AND8051/D SPICE Device Model NTHD5902T1 Dual N–Channel 30 V D–S MOSFET http://onsemi.com APPLICATION NOTE CHARACTERISTICS DESCRIPTION • • • • • • The attached SPICE Model describes typical electrical characteristics of the n–channel vertical DMOS. The


    Original     		PDF AND8051/D NTHD5902T1 r14525 Kappa Networks 110E 7E17 NTHD5902T1 Si5902DC

    PMOS MODEL PARAMETERS SPICE

    Abstract: PMOS k 815 MOSFET Si6923DQ
    Text: SPICE Device Model Si6923DQ P-Channel Rated MOSFET + Schottky Diode Characteristics • • • • • Applicable Over a -55 to 125 o C Temperature Range • Models Gate Charge, Transient and Diode Reverse P-Channel Vertical DMOS Macro-Model Subcircuit


    Original     		PDF Si6923DQ 1E-05 PMOS MODEL PARAMETERS SPICE PMOS k 815 MOSFET

    spice model solid state relay

    Abstract: solid state relay spice model swhyste lambda schematic los-7-15 llc converter spice model NMOS MODEL PARAMETERS SPICE relay spice model
    Text: SPICE Device Model Si4768CY Vishay Siliconix Si4768CY N-Channel Synchronous MOSFETs SCOPE This document contains a description of the SPICE model and test and application circuits for the Vishay SI4768CY N-Channel Synchronous MOSFETs with Break-Before-Make.


    Original     		PDF Si4768CY includ-May-04 12-May-04 spice model solid state relay solid state relay spice model swhyste lambda schematic los-7-15 llc converter spice model NMOS MODEL PARAMETERS SPICE relay spice model

    swhyste

    Abstract: TC-165 mosfet 260n 254p AEI Semiconductors Si4768CY Si4770CY diode M7 156n diode NMOS MODEL PARAMETERS SPICE
    Text: SPICE Device Model Si4770CY Vishay Siliconix SI4770CY N-Channel Synchronous MOSFETs SCOPE This document contains a description of the SPICE model and test and application circuits for the Vishay SI4770CY N-channel Synchronous MOSFETs with Break-Before-Make.


    Original     		PDF Si4770CY 18-Jul-08 swhyste TC-165 mosfet 260n 254p AEI Semiconductors Si4768CY diode M7 156n diode NMOS MODEL PARAMETERS SPICE

    op amp 741 model PSpice code

    Abstract: op amp 741 model PSpice DC-M4 diode AN4820 MAR 732 an4819 op amp 741 model Spice AN489 8741 substitution BF178
    Text: Application Note 48 November 1991 Using the LTC Op Amp Macromodels Getting the Most from SPICE and the LTC Library Walt Jung INTRODUCTION This application note is an overview discussion of the Linear Technology SPICE macromodel library. It assumes little if any prior knowledge of this software library or its


    Original     		PDF 0000E 4332E 8000E-04 8506E-03 1000000E 1000005E op amp 741 model PSpice code op amp 741 model PSpice DC-M4 diode AN4820 MAR 732 an4819 op amp 741 model Spice AN489 8741 substitution BF178

    G2-20P

    Abstract: delta rectifier all model AN1043 Si4724CY llc converter spice model converter spice model S50464 lambda schematic los-7-15 mosfet SPICE MODEL
    Text: SPICE Device Model Si4724CY Vishay Siliconix N-Channel Synchronous MOSFETs FUNCTIONAL DESCRIPTION The SI4724CY is a high-speed driver designed to operate in high frequency dc-dc switchmode power supplies. It is designed to be used with any single output PWM IC or ASIC to produce a highly


    Original     		PDF Si4724CY 18-Jul-08 G2-20P delta rectifier all model AN1043 llc converter spice model converter spice model S50464 lambda schematic los-7-15 mosfet SPICE MODEL

    XH035

    Abstract: mos rm3 data nmos transistor 0.35 um MOS RM3 "X-Fab" Core cell library bsim3v3 jfet wn 428 PHVC polysilicon resistor bsim3
    Text: 0.35 µm CMOS Process Family XH035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular Analog Mixed Signal Technology with RF capability and HV Extensions Description The XH035 series is X-FAB’s 0.35-micron Modular RF capable Mixed Signal Technology. Main target


    Original     		PDF XH035 XH035 35-micron mos rm3 data nmos transistor 0.35 um MOS RM3 "X-Fab" Core cell library bsim3v3 jfet wn 428 PHVC polysilicon resistor bsim3

    mosfet SPICE MODEL

    Abstract: G2-20P Si4724CY 21E16 llc converter spice model diode M022 AN1043 NMOS MODEL PARAMETERS SPICE 650N M0-22
    Text: SPICE Device Model Si4724CY Vishay Siliconix N-Channel Synchronous MOSFETs FUNCTIONAL DESCRIPTION The SI4724CY is a high speed driver designed to operate in high frequency dc-dc switchmode power supplies. It is designed to be used with any single output PWM IC or ASIC to produce a highly


    Original     		PDF Si4724CY 545u/4u) AN1043, 23-Jan-04 mosfet SPICE MODEL G2-20P 21E16 llc converter spice model diode M022 AN1043 NMOS MODEL PARAMETERS SPICE 650N M0-22

    CMOS

    Abstract: hv 102 mos fet transistor varactor diode model in ADS bsim3 ADS varactor diode 0.18 micron 1.8V pspice model BSIM3V3 bsim3 model bsim3 model for 0.18 micron technology for hspice N-Channel jfet 100V depletion
    Text: 0.6 m CMOS Process XC06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Mixed Signal Technology Description Key Features The XC06 Series completes X-FAB‘s 0.6 Micron Modular Mixed Signal Technology with embedded Non Volatile Memory and High Voltage options.


    Original     		PDF

    spice model Tunnel diode

    Abstract: dpsN TUNNEL DIODE spice model
    Text: 0.6 µm Process XT06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Trench Isolated SOI CMOS Technology Description The XT06 Series completes X-FAB's 0.6 Micron Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers. This allows unrestricted 60 V high and low side operation


    Original     		PDF

    0.6 um cmos process

    Abstract: bsim3 Trench MOS Schottky Rectifier MICRON POWER RESISTOR Mos BSIM3 SOI pmos 60V-20 MICRON RESISTOR Mos MOS RM3 P-Channel Depletion Mosfets
    Text: 0.6 µm Process XT06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Trench Isolated SOI CMOS Technology Description The XT06 Series completes X-FAB's 0.6 Micron Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers. This allows unrestricted 60 V high and low side operation


    Original     		PDF

    CMOS

    Abstract: MICRON RESISTOR Mos MOS RM3 power BJT PNP spice model spice gate drive module mos rm3 data ESD "p-well" n-well" CMOS spice model ne3 MOS3ST varactor diode SPICE model
    Text: 0.18 µm CMOS Process XC018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron Modular RF enabled CMOS Logic and Analog Technology 0.18-micron drawn gate length N-well process, modules are also available for metal-insulatormetal capacitors, high resistive poly, dual gate


    Original     		PDF XC018 18-micron XC018 CMOS MICRON RESISTOR Mos MOS RM3 power BJT PNP spice model spice gate drive module mos rm3 data ESD "p-well" n-well" CMOS spice model ne3 MOS3ST varactor diode SPICE model

    CMOS

    Abstract: pmos4
    Text: 0.8 µm CMOS Process CX08 MIXED-SIGNAL FOUNDRY EXPERTS 0.8 Micron Modular Mixed Signal Technology Description The CX08 Series is X-FAB‘s 0.8 Micron Modular Mixed Signal Technology. Main target applications are standard cell, semi-custom and full custom designs for Industrial, Tele­com­mu­ni­cation and Automotive products - including the 42V board net.


    Original     		PDF

    CMOS

    Abstract: AF32K8AF25 NMOS native pspice model resistor bsim3 6T SRAM micron cmos sensor connection BSIM3 nmos transistor pmos Vt bsim3 model
    Text: 0.25 m CMOS Process FC025 MIXED-SIGNAL FOUNDRY EXPERTS 0.25 Micron CMOS Technology Description Key Features Applications Quality Assurance Deliverables Digital Libraries Analog Libraries Primitive Devices The FC025 series is X-FAB’s 0.25-micron Modular


    Original     		PDF FC025 FC025 25-micron CMOS AF32K8AF25 NMOS native pspice model resistor bsim3 6T SRAM micron cmos sensor connection BSIM3 nmos transistor pmos Vt bsim3 model

    mos rm3 data

    Abstract: MOS RM3 BSIM3V3 XH035 RM4L bsim3 dw-mo MICRON POWER RESISTOR Mos Q100 analog devices transistor tutorials
    Text: 0.35 µm CMOS Process Family XA035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron High Temperature Modular CMOS Technology Description The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and


    Original     		PDF XA035 XA035 35-micron XH035 mos rm3 data MOS RM3 BSIM3V3 RM4L bsim3 dw-mo MICRON POWER RESISTOR Mos Q100 analog devices transistor tutorials

    bsim3 0.18 micron parameters

    Abstract: bsim3 model ESSDERC-98
    Text: Impact of Process Scaling on 1/f Noise in Advanced CMOS Technologies MJ. Knitel, P.H. Woerlee, A.J. Schölten, and A.T.A. Zegers-Van Duijnhoven Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands phone: +31-40-2742723; fax: + 31-40-2743390; e-mail: andries.scholten@philips.com


    OCR Scan     		PDF 464-IEDM bsim3 0.18 micron parameters bsim3 model ESSDERC-98