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    PN 2222 A TRANSISTOR Search Results

    PN 2222 A TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    PN 2222 A TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PN2222

    Abstract: 2222 A to92 transistor 2222
    Text: PN2222 PN2222 General Purpose Transistor TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 60 Units V VCEO VEBO Collector-Emitter Voltage


    Original     		PDF PN2222 PN2222 O-92-3 AN-2001: AN-2001 PN2222BU PN2222TA PN2222TAR PN2222TF 2222 A to92 transistor 2222

    Zetex T 705

    Abstract: No abstract text available
    Text: FCX705 120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUM M ARY V CEO=120V; V CE sat = 1.3V; IC= -1A DESCRIPTION This new PNP Darlington transistor provides users with very efficient performance combining low VCE (sat) and very high HFE to give extremely low on state losses at


    Original     		PDF FCX705 OT223 Zetex T 705

    2907A

    Abstract: ZT2907A mdpv
    Text: SIEM EN S PNP Silicon Switching Transistors PZT 2907 PZT 2907 A • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage • Complementary types: PZT 2222 N PN PZT 2222 A (NPN) Type Marking Ordering Code (tape and reel) Pin Conf igura ion


    OCR Scan     		PDF Q62702-Z2028 Q62702-Z2025 OT-223 2907A ZT2907A mdpv

    transistor Bc 540

    Abstract: transistor BC 341-6 transistor BC 660 transistor 3702 transistor 3707 transistor 2n 2222 transistor Bc 7 NPN transistor 2n 3904 transistors BC 225 transistor BC 310
    Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique tho m so n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .


    OCR Scan     		PDF BCW94 transistor Bc 540 transistor BC 341-6 transistor BC 660 transistor 3702 transistor 3707 transistor 2n 2222 transistor Bc 7 NPN transistor 2n 3904 transistors BC 225 transistor BC 310

    transistor bf 422 NPN

    Abstract: transistors BC 548 BC 558 transistor BC 338 BC 2222 BC 557 npn transistor bf 422 BC 547 pnp transistor 2N 5551 TRANSISTOR 642 npn 2222 transistor
    Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m so n -csf Case ^ ^ ^ 1 0 92 Polarity NPN PN P N PN CB-1% PN P NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PN P v CEO B Ç 2 3 8 .


    OCR Scan     		PDF BCW94 transistor bf 422 NPN transistors BC 548 BC 558 transistor BC 338 BC 2222 BC 557 npn transistor bf 422 BC 547 pnp transistor 2N 5551 TRANSISTOR 642 npn 2222 transistor

    639 TRANSISTOR PNP

    Abstract: transistor ESM 692 NPN 337 esm 2907 pnp transistor npn 2222 transistor transistor C 548 B BC516 E C B BC 635 TRANSISTOR BC 557 PNP TRANSISTOR transistor bf 422 NPN
    Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m so n -csf Case ^ ^ ^ 1 0 92 Polarity NPN PNP NPN CB-1% PNP NPN 0,8.1 A 0,4.0,6 A «0,2 A PNP v CEO 20 V B Ç 2 3 8 .


    OCR Scan     		PDF BCW94 CB-76 639 TRANSISTOR PNP transistor ESM 692 NPN 337 esm 2907 pnp transistor npn 2222 transistor transistor C 548 B BC516 E C B BC 635 TRANSISTOR BC 557 PNP TRANSISTOR transistor bf 422 NPN

    transistor Bc 540

    Abstract: TRANSISTOR BC 135 transistor Bc 540 pin BC 540 TRANSISTOR Bc 540 transistor B 540 bcw 25 transistor bcw 91 transistor ESM635 transistor BC 635
    Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m so n -c s f Case ^ ^ ^ 1 0 92 Polarity NPN PN P N PN CB-1% PN P NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PN P v CEO B Ç 2 3 8 .


    OCR Scan     		PDF BCW94 CB-76 transistor Bc 540 TRANSISTOR BC 135 transistor Bc 540 pin BC 540 TRANSISTOR Bc 540 transistor B 540 bcw 25 transistor bcw 91 transistor ESM635 transistor BC 635

    TRANSISTOR BC 213

    Abstract: TRANSISTOR BC 181 bf 239 BF 212 transistor transistor bf 184 BF 184 NPN transistor TRANSISTOR BC 212 TRANSISTOR BC 174 transistor BC 338 BF 184 transistor
    Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique tho m so n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .


    OCR Scan     		PDF BCW94 CB-76 TRANSISTOR BC 213 TRANSISTOR BC 181 bf 239 BF 212 transistor transistor bf 184 BF 184 NPN transistor TRANSISTOR BC 212 TRANSISTOR BC 174 transistor BC 338 BF 184 transistor

    transistor bc 488

    Abstract: transistor bc 557 c bc 547 b transistor TRANSISTOR C 557 B TRANSISTOR BC 550 b transistor BC 490 C 547 B pin configuration bc 547 transistor transistor BC 557 transistor C 548 B
    Text: t h o m s o n -c s f general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A «0,2 A PNP v CEO 20 V B Ç 2 3 8 .


    OCR Scan     		PDF BCW94 BC317P. transistor bc 488 transistor bc 557 c bc 547 b transistor TRANSISTOR C 557 B TRANSISTOR BC 550 b transistor BC 490 C 547 B pin configuration bc 547 transistor transistor BC 557 transistor C 548 B

    transistor BC 310

    Abstract: transistor bc 487 transistor BC 321 TRANSISTOR BC 416 b pnp bc 337-25 transistor TRANSISTOR BC 415 transistor bc 318 transistor BC 337-25 TRANSISTOR BC 413 bc 337-40 transistor
    Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m s o n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .


    OCR Scan     		PDF BCW94 CB-76 BC317P. transistor BC 310 transistor bc 487 transistor BC 321 TRANSISTOR BC 416 b pnp bc 337-25 transistor TRANSISTOR BC 415 transistor bc 318 transistor BC 337-25 TRANSISTOR BC 413 bc 337-40 transistor

    BC 540 TRANSISTOR

    Abstract: transistor Bc 540 NPN transistor 2n 3904 transistor 2N 3904 2907pn NPN transistor 2n 3906 2N3702P 2N 3904 transistor transistor 2n 2N3415
    Text: general purpose transistors — plastic case transistors usage général — boîtier plastique Type NPN M ax im u m ratings PIMP Ptot Characteristics at 25 °C VcEO h21E min 2N 3414 2 N 3 4 15 2N 3416 2 N 3 4 17 2N 2N 2N 2N 2N 3707 3708 3709 3710 3711 10/


    OCR Scan     		PDF 2N3415 2N3711 30duit BC 540 TRANSISTOR transistor Bc 540 NPN transistor 2n 3904 transistor 2N 3904 2907pn NPN transistor 2n 3906 2N3702P 2N 3904 transistor transistor 2n

    BF298

    Abstract: BC 458 transistors BC 458 transistors BC 548 BC 558 transistor BC 458 transistor bf 422 NPN bc 457 transistors BC 548 BC 558 PNP BC 557 npn Transistor BC 457
    Text: th o m so n -csf general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PN P N PN PN P NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PN P v CEO B Ç 2 3 8 .


    OCR Scan     		PDF BCW94 BF298 BC 458 transistors BC 458 transistors BC 548 BC 558 transistor BC 458 transistor bf 422 NPN bc 457 transistors BC 548 BC 558 PNP BC 557 npn Transistor BC 457

    Untitled

    Abstract: No abstract text available
    Text: PN2222 PN2222A _y SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon planar epitaxial transistors in a plastic TO-92 package prim arily intended for linear and switching applications. P-N-P complement is PN2907/2907A. Q UICK REFERENCE D A T A


    OCR Scan     		PDF PN2222 PN2222A PN2907/2907A. 100kf2

    2N2222

    Abstract: PN2222 2N2222A 2N2222 pnp 2N2222-PN2222 FN2222A 2n2222 micro electronics PN2222A le PN2222A 2N2222 power
    Text: 2N2222 PN 2222 2 N 2222A PN 2222A THE 2N2222, 2N2222A, PN2222, PN2222A ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE FNP TYPE 2N2907, 2N2907A, PN2907, PN2907A RESPECTIVELY.


    OCR Scan     		PDF 2N2222 PN2222 2N2222A PN2222A 2N2222, 2N2222A, PN2222, 2N2907, 2N2907A, 2N2222 pnp 2N2222-PN2222 FN2222A 2n2222 micro electronics PN2222A le 2N2222 power

    bel187

    Abstract: bel 187 transistor BEL 100N TRANSISTOR BEL188 transistor bel 187 bel 187 NPN TRANSISTOR bel 188 transistor BEL100N bel 187 transistor npn PN3904
    Text: BHARAT ELEK/SEHICOND DI 47E D • 1 4 3 5 3 ‘iä G O G G Q 1 G Tifi ■ B E LI I VCE Si Device No VCEO Volts min VCBO Volts mm V eb o Volts min hFE at b<as mm /max. Ic mA VCE Volts 1CM mA max P lo t mW ICBO nA max typ S a t V otts typ Cob ts p l- ns typ


    OCR Scan     		PDF 27min. 37min. 35friin. 50min 50min. 40min 40min. bel187 bel 187 transistor BEL 100N TRANSISTOR BEL188 transistor bel 187 bel 187 NPN TRANSISTOR bel 188 transistor BEL100N bel 187 transistor npn PN3904

    2222 mps2222

    Abstract: GES2222 MPS2222 ges 2222 GES2221 PN2222
    Text: Dl SOLID STATE 3875081 G E SOLID STATE 3Û7S0Ô1 DOlTTbH 7 01E 17962 D y- i s 1 Signal Transistors GES2221, GES2222, MPS2222, PN2222 Silicon Transistors Features: • Perform ance com parable to herm etic units * High Gain ■ L o w VCe sat ■ H igh Frequency


    OCR Scan     		PDF 75Dfil GES2221, GES2222, MPS2222, PN2222 PN2222 GES2222 MPS2222 2222 mps2222 ges 2222 GES2221

    GES2222

    Abstract: No abstract text available
    Text: Ql SOLID STATE Ö F |3fl7S 0fil 3875081 G E SOLID STATE □ 0 1 7 clt.a 7 01E 17962 D 3^1 Signal Transistors 1 GES2221, GES2222, MPS2222, PN2222 Silicon Transistors Features: • Performance comparable to hermetic units * High Gain ■ Low VCE SAT ■ High Frequency


    OCR Scan     		PDF GES2221, GES2222, MPS2222, PN2222 GES2222 MPS2222 GES2221

    TO-98

    Abstract: transistor MPSA06 NPN Transistor TO92 2N3391A 2N3904 TO-92 type transistor 2n3903 2N2924 ges3 2N2926-5 2N3390
    Text: - THOriSON/ DISTRIBUTOR SñE D m T05t,ñ?3 0005737 • TCSK Discrete Transistors Small-Signal Bipolar Transistors In O rder of Ascending I q NPN Signal Transistor Selector Guide NPN Signal Transistor Selector Guide (M ax.) In A v (BR)CEO (M in.)


    OCR Scan     		PDF 1CJ5bfl73 2N3390 2N2923 2N2924 2N2925 2N2926 2N2926-5 2N3391 2N3391A 2N3392 TO-98 transistor MPSA06 NPN Transistor TO92 2N3904 TO-92 type transistor 2n3903 ges3

    ma-6008

    Abstract: No abstract text available
    Text: bSE D El 711Qä2b 0Gb3D14 5öS HIPHIN BLV90/SL _ PHILIPS INTERNATIONAL_ _ U H F POWER TRANSISTOR N PN silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 9 0 0 M H z band. Features: • diffused emitter-ballasting resistors for an optim um temperature profile.


    OCR Scan     		PDF BLV90/SL OT-172D) 711002b ma-6008

    ses 554

    Abstract: SO3572R marking n47 BSV52R F5BF marking 502S SO3570R Marking P18 SO2221A BSR15R
    Text: sw itching transistors transistors de commutation Types N PN THOMSON-CSF M axim u m ratings PNP Characteristics at 25 °C p totl V c E O h21E min (mW •c @ VCE(sat) @ Ic / 'B max (V) max (V) Im A ) (m A) C 22b *T m in max (M H z) (pF) B S V 52(R) 200 12


    OCR Scan     		PDF 2369IR) ses 554 SO3572R marking n47 BSV52R F5BF marking 502S SO3570R Marking P18 SO2221A BSR15R

    Untitled

    Abstract: No abstract text available
    Text: b h S B 'lB l Philips Semiconductors 002^230 b 3b M l APX Product specification UHF power transistor BLV193 'N AMER PHILIPS/DISCRETE FEATURES • Emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability.


    OCR Scan     		PDF BLV193 MRAS57

    TT 2222 npn

    Abstract: 709a 2N709 2n h 2222a 2N698 2N708 2N753 2222 NPN
    Text: à Si a. UJ >° 0Hi >U aLU £ oc 2N 706 2N 706A 2N708 2N709 2N 709A 2N 722 2N 743 2N 744 2N753 2N 834 2N 834A 2N 869A 2N 914 2N 995 2N 2205 2N 2218 2N 2218A 2N 2219 2N 2219A 2N 2221 2N 2221A 2N 2222 2N 2222A 2N 2368 2N 2369 2N 2369A 2N 2475 2N 2894 2N 2904


    OCR Scan     		PDF 2N708 2N709 2N753 000000000000a l000000 T0-18 TT 2222 npn 709a 2n h 2222a 2N698 2222 NPN

    ITT 2222 A

    Abstract: ITT 2222 npn itt 2222 SOT342 2222861 BGY203 flange RF resistor 50 PHILIPS UHF AMPLIFIER MODULE LIST transistor tt 2222 TT 2222
    Text: Philips Semiconductors Preliminary specification UHF amplifier module BGY203 FEATURES DESCRIPTION • 6 V nominal supply voltage The BGY203 is a four-stage UHF amplifier module. It consists of four NPN silicon planar transistor chips mounted together with matching and bias circuit


    OCR Scan     		PDF BGY203 OT342 BGY203 711002b OT342. ITT 2222 A ITT 2222 npn itt 2222 SOT342 2222861 flange RF resistor 50 PHILIPS UHF AMPLIFIER MODULE LIST transistor tt 2222 TT 2222

    t04 68 3 pin transistor

    Abstract: PHILIPS UHF AMPLIFIER MODULE LIST BGY200 2222 861 phaseshift
    Text: Product specification Philips Semiconductors UHF amplifier module BGY200 FEATURES DESCRIPTION • 7.2 V nominal supply voltage The BGY200 is a four-stage UHF amplifier module. It consists of four NPN silicon planar transistor chips mounted together with matching and bias circuit


    OCR Scan     		PDF BGY200 BGY200 SDT350 MSA393 7110fl2ti OT350. t04 68 3 pin transistor PHILIPS UHF AMPLIFIER MODULE LIST 2222 861 phaseshift