Untitled
Abstract: No abstract text available
Text: VBUS053CZ-HAF Vishay Semiconductors USB-OTG BUS-Port ESD-Protection for VBUS = 28 V FEATURES • Ultra compact LLP75-7L package 6 5 • Low package height < 0.6 mm 4 • 3-line USB ESD-protection with max. working range = 5.5 V • VBUS-protection with 28 V working range
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VBUS053CZ-HAF
LLP75-7L
2002/95/EC
2002/96/EC
11-Mar-11
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LVP640
Abstract: 90A4 car inverter
Text: LITE ON LITE-ON SEMICONDUCTOR LVP640 Features • • • • • Avalanche Rugged Technology Rugged Gate Oxide Technology High di/dt Capability Improved Gate Charge Wide Expanded Safe Operating Area TO-220 GDS Application • • • • D DC-DC Converters
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LVP640
O-220
LVP640
90A4
car inverter
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LVP630
Abstract: LVPF630
Text: LITE ON LITE-ON SEMICONDUCTOR LVP630 FEATURES • • • • • Avalanche Rugged Technology Rugged Gate Oxide Technology High di/dt Capability Improved Gate Charge Wide Expanded Safe Operating Area TO-220 GDS Application D • DC-DC Converters • UPS & Monitors
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LVP630
O-220
LVP630
LVPF630
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UC 493
Abstract: 9N80
Text: UNISONIC TECHNOLOGIES CO., LTD 9N80 Preliminary Power MOSFET 9A, 800V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 9N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a
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O-220
O-220F1
QW-R502-493
UC 493
9N80
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FTN035N60
Abstract: No abstract text available
Text: FTN035N60 600V, N-Channel MOSFET General Features BVDSS RDS ON (Max.) ID 600V 13.5 Ω 0.35A eet • Extremely high dv/dt capability • Low Gate Charge • ESD improved capability • 100% avalanche tested • New high voltage Benchmark aSh Applications：
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FTN035N60
FTN035N60
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AN-16 topswitch
Abstract: EE16 core transformer for TNY253 flyback switching snubber design TNY254 pn universal flyback transformer specification zener snubber PIV RATING 25 V DIODE WITH 2a OUTPUT CURRENT MUR420 diode RC VOLTAGE CLAMP snubber circuit
Text: TinySwitch Flyback Design Methodology Introduction Figure 1. shows the basic circuit configuration in a typical TinySwitch flyback design using TNY253. This document describes a simple Design Methodology for flyback power supply design using the TinySwitch family of integrated off-line
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TNY253.
TL431
AN-16 topswitch
EE16 core
transformer for TNY253
flyback switching snubber design
TNY254 pn
universal flyback transformer specification
zener snubber
PIV RATING 25 V DIODE WITH 2a OUTPUT CURRENT
MUR420 diode
RC VOLTAGE CLAMP snubber circuit
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SSF45N20A
Abstract: No abstract text available
Text: SSF45N20A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS on = 0.065 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 26.4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V
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SSF45N20A
SSF45N20A
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Untitled
Abstract: No abstract text available
Text: $GYDQFHG 3RZHU 026 7 IRFW/I634A FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.45Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 8.1 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V
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IRFW/I634A
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Untitled
Abstract: No abstract text available
Text: VBUS054DD-HF4 www.vishay.com Vishay Semiconductors 4-Line BUS-Port ESD Protection FEATURES 4 3 • Ultra compact LLP1010-5L package 5 • Low package profile < 0.4 mm • 4-line ESD-protection 1 2 • Low leakage current 21483 • Low load capacitance CD = 0.8 pF
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VBUS054DD-HF4
LLP1010-5L
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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UF634L
Abstract: a/kvp 81A DIODE
Text: UNISONIC TECHNOLOGIES CO., LTD UF634 Preliminary Power MOSFET ADVANCED POWER MOSFET DESCRIPTION The UTC UF634 is a N-channel Power MOSFET and it uses UTC advanced technology to provide customers with lower RDS ON , improved gate charge and so on. FEATURES
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UF634
UF634
UF634L-TA3-T
UF634G-TA3-T
O-220
QW-R502-454
UF634L
a/kvp 81A DIODE
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SSF7N90A
Abstract: No abstract text available
Text: N-CHANNEL POWER MOSFET SSF7N90A FEATURES BVDSS = 900V • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Lower Leakage Current: 25µA Max. @ VDS = 900V
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SSF7N90A
SSF7N90A
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SSF10N80A
Abstract: 5V GATE TO SOURCE VOLTAGE MOSFET
Text: SSF10N80A Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS on = 0.95 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 6.5 A Improved Gate Charge Extended Safe Operating Area TO-3PF Lower Leakage Current : 25 µA (Max.) @ VDS = 800V
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SSF10N80A
SSF10N80A
5V GATE TO SOURCE VOLTAGE MOSFET
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQA6N70 FEATURES BVDSS = 700V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 30nC Typ. • Extended Safe Operating Area
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FQA6N70
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Untitled
Abstract: No abstract text available
Text: QFET P-CHANNEL FQD2P25, FQU2P25 FEATURES BVDSS = −250V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 6.5nC Typ.
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FQD2P25,
FQU2P25
-250V
FQD2P25
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQPF6N50 FEATURES BVDSS = 500V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 17nC Typ. • Extended Safe Operating Area
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FQPF6N50
O-220F
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DSA0021811
Abstract: No abstract text available
Text: QFET N-CHANNEL FQB7N60, FQI7N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 28nC Typ.
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FQB7N60,
FQI7N60
FQB7N60
DSA0021811
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQPF6N25 FEATURES BVDSS = 250V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 8.0nC Typ. • Extended Safe Operating Area
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FQPF6N25
O-220F
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Untitled
Abstract: No abstract text available
Text: SFR/U9230 Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS on = 0.8 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = -5.4 A Improved Gate Charge Extended Safe Operating Area D-PAK Lower Leakage Current : 10 µA (Max.) @ VDS = -200V
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-200V
SFR/U9230
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQPF5N20 FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 6.0nC Typ. • Extended Safe Operating Area
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FQPF5N20
O-220F
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQP8N25 FEATURES BVDSS = 250V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 14nC Typ. • Extended Safe Operating Area
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FQP8N25
O-220
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Untitled
Abstract: No abstract text available
Text: QFET P-CHANNEL FQP6P25 FEATURES BVDSS = −250V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 21nC Typ. •
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FQP6P25
-250V
O-220
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FQA19N20L
Abstract: No abstract text available
Text: QFET N-CHANNEL FQA19N20L FEATURES BVDSS = 200V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 50nC Typ. •
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FQA19N20L
FQA19N20L
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQP6N25 FEATURES BVDSS = 250V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 8.0nC Typ. • Extended Safe Operating Area
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FQP6N25
O-220
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GG3L
Abstract: 50K1J m0 85a diode diode D3B
Text: IRFW/IZ24A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175» «Operating Temperature Lower Leakage Current : 10 nA Max. @ VDS = 60V
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IRFW/IZ24A
12-PAK
7SL4142
3TD73
GG3L
50K1J
m0 85a diode
diode D3B
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