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    PNP 5172 Search Results

    PNP 5172 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73128RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency PNP Transistor Array Visit Renesas Electronics Corporation
    ISL73096RHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    PNP 5172 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    5172

    Abstract: MJE5170 MJE5171 MJE5172 pnp 5172
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors MJE5170/5171/5172 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = -120V(Min)- MJE5170 = -140V(Min)- MJE5171 = -160V(Min)- MJE5172 ·Low Saturation Voltage ·Complement to Type MJE5180/5181/5182


    Original     		MJE5170/5171/5172 -120V MJE5170 -140V MJE5171 -160V MJE5172 MJE5180/5181/5182 5172 MJE5170 MJE5171 MJE5172 pnp 5172 PDF

    2N5225

    Abstract: 2N5179 TO-92
    Text: D tv ta TYPE PACKAGE BVCEO BVCBO BVEBO IC BO VCB IV M IN IV ) M H 2N4314 2N4384 2N4386 2N4400 2N4401 PNP NPN NPN NPN NPN T O -39 T O -18 T O -18 TO-92 721 TO-92 (72) 65 30 30 40 40 90 40 40 60 60 2N4402 2N4403 2N4404 2N4405 2N4409 PNP PNP PNP PNP NPN


    OCR Scan     		2N4314 2N4384 2N4386 2N4400 2N4401 2N4402 2N4403 2N4404 2N4405 2N4409 2N5225 2N5179 TO-92 PDF

    mps65

    Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50 50 20,000 10,000


    OCR Scan     		GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20MPS6516 MPS6517 mps65 MPSA20 PDF

    MPS6566

    Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50 50 20,000 10,000


    OCR Scan     		GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA2034 MPS6532 MPS6566 MPSA20 PDF

    mpsa65

    Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO -92 PACKAGE Device bvceo Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50 50


    OCR Scan     		GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA200 MPS3702, mpsa65 MPSA20 PDF

    GES5819

    Abstract: GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 MPSA55
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device bv ceo Type @ 10mA- V Min. VCE(sat) 1F E Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30


    OCR Scan     		GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20S6535 100mA) MPSA20 MPSA55 PDF

    MPS6531

    Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50 50 20,000 10,000


    OCR Scan     		GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA206531, MPS6532 MPS6531 MPSA20 PDF

    MPS6566

    Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device bv ceo Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50 50


    OCR Scan     		GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20VES MPS6566 MPSA20 PDF

    D38L1-3

    Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE b v ceo Device Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50


    OCR Scan     		GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 D38L1-3 MPSA20 PDF

    1489A

    Abstract: XR-1488 XR-1488N XR-1488P XR-1489A XR-1489AN XR-1489AP XR-L100 EXAR XR
    Text: EXAR 3422618 EXAR CORP Chip Size: 102 x 85 mils NPN Transistors Small Signal: 76 Total Components: 448 Medium: 2 Bonding Pads: 24 Max. Operating Voltage: 20V Large: 2 PNP Transistors Lateral: 22 Quad Collector: 4 TM Pinch Resistors 60kil: 10 Diffused Resistors


    OCR Scan     		34EBhlà 0G47b5 XR-L100 60kft: 200fl: 450ft: 900ft: 348kft XR-L100 XR-1488/1489A 1489A XR-1488 XR-1488N XR-1488P XR-1489A XR-1489AN XR-1489AP EXAR XR PDF

    XR-M100

    Abstract: XR-1488 XR-494 XR-1488N XR-1488P XR-1489A XR-1489AN XR-1489AP EXAR XR
    Text: EXAR 3422618 EXAR CORP Tl dË CORP XR-M100 Master-Chip NPN Transistors Chip Size: 176 x 121 mils Small Signal: 137 Total Components: 840 Low Noise: 4 Bonding Pads: 28 Max. Operating Voltage: 20V Medium: 4 Large: 4 PNP Transistors Lateral: 44 Quad Collector: 8


    OCR Scan     		XR-M100 60kil: 200ii: 450fi: 900fl: 712kfl XR-1488/1489A XR-1488 designed568M XR-1568/XR-1468C XR-494 XR-1488N XR-1488P XR-1489A XR-1489AN XR-1489AP EXAR XR PDF

    Exar cross

    Abstract: XR-1488 XR-1488N XR-1488P XR-1489A XR-1489AN XR-1489AP XR-W100 EXAR XR
    Text: EXAR 3422618 EXAR CORP 11 CORP 91D XR-W100 Master-Chip Chip Size: 163 x 133 mils NPN Transistors Small Signal: 196 Total Components: 882 Bonding Pads: 40 Supermatched Small Signal: 16 Max. Operating Voltage: 36V Large: 4 PNP Transistors Lateral: 60 Small Vertical: 10


    OCR Scan     		3422blfl XR-W100 559kii 50kfl: 20kil: 10kii: XR-W100 XR-1568/XR-1468C XR-1468/1568 Exar cross XR-1488 XR-1488N XR-1488P XR-1489A XR-1489AN XR-1489AP EXAR XR PDF

    XR-1489AP

    Abstract: XR-1488 XR-1488N XR-1488P XR-1489A XR-1489AN XR-G100 EXAR XR
    Text: EXAR 3422618 CORP De | E XAR CORP 9 1D 0 4 7 6 2 XR-G100 Master-Chip Chip Size: 90 x 90 mils NPN Transistors Total Components: 327 Small Signal: 58 Bonding Pads; 18 High Current: 2 Max. Operating Voltage: 20V PNP Transistors: 18 Schottky Diodes: None TM Pinch Resistors


    OCR Scan     		GQD47b2 XR-G100 266kfl XR-1568/XR-1468C XR-1468/1568 XR-1489AP XR-1488 XR-1488N XR-1488P XR-1489A XR-1489AN EXAR XR PDF

    XR-1488

    Abstract: XR-494 XR-1488N XR-1488P XR-1489A XR-1489AN XR-1489AP XR-J100 EXAR XR 1468CN
    Text: EXAR 3422618 EXAR C OR P TI ï> i 3 4 E 2 t i ] j ö CORP 91D XR-J100 Master-Chip NPN Transistors Linear, bipolar Small Signal: 36 Chip Size: 80 x 75 mils Medium: 2 Total Components: 188 Dual PNP Transistors: 12 Bonding Pads: 18 Max. Operating Voltage: 20V


    OCR Scan     		0Q047bM XR-J100 60kft: 200fi: 450il: 900fl: 159kfl XR-J100 XR-1488/1489A XR-1488 XR-494 XR-1488N XR-1488P XR-1489A XR-1489AN XR-1489AP EXAR XR 1468CN PDF

    XR-1488

    Abstract: sl 1489a 1468cn XR-494 XR-1488N XR-1488P XR-1489A XR-1489AN XR-1489AP XR-A100
    Text: EXAR C O R P "il 3 4 EEb 10 0 0 0 4 7 5 b . TM XR-A100 Master-Chip1 Chip Size: 73 x 83 mils NPN Transistors Total Components: 276 Small Signal: 58 Bonding Pads: 16 High Current: 2 200 mA Max. Operating Voltage: 20V PNP Transistors: 18 Schottky Diodes: 15


    OCR Scan     		3422blà DD0M75t> XR-A100 30kii: 100kH: 214ki! XR-A100 XR-1488/1489A XR-1488 dat568M sl 1489a 1468cn XR-494 XR-1488N XR-1488P XR-1489A XR-1489AN XR-1489AP PDF

    XR-1488

    Abstract: XR-494 XR-1489AP XR-1488N XR-1488P XR-1489A XR-1489AN XR-X100 1468CN
    Text: EXAR I 3422618 EXAR 11 CORP D E| 3 M2 S b l ö G D D 477 D 91 D 04770 CORP XR-X100 Master-Chip Chip Size: 115 x 95 mils NPN Transistors Total Components: 293 Small Signal: 30 Bonding Pads: 18 High Current: 4 Max. Operating Voltage: 75V PNP Dual Collector


    OCR Scan     		3422blà XR-X100 10Okfi: 500il: 234kO XR-1488/1489A XR-1488 ter568M XR-1568/XR-1468C XR-1468/1568 XR-494 XR-1489AP XR-1488N XR-1488P XR-1489A XR-1489AN 1468CN PDF

    XR-1489AP

    Abstract: 1489ap 206K XR-1488 XR-1488N XR-1488P XR-1489A XR-1489AN XR-E100 XR1489AN
    Text: EXAR 3422618 EXAR CORP D Ë| 342Eblö □ □ 0 Ll7b>0 S 91D D CORP XR-E100 Master-Chip Chip Size: 82 x 82 mils NPN Transistors Small Signal: 48 Total Components: 224 Bonding Pads: 18 Dual PNP Transistors: 15 Max. Operating Voltage: 20V TM r - n a - a i Pinch Resistors


    OCR Scan     		34EEblà 0GQ47bG XR-E100 30kii: 200fl: 206kil XR-E100 XR-1488/1489A XR-1488 communications68M XR-1489AP 1489ap 206K XR-1488N XR-1488P XR-1489A XR-1489AN XR1489AN PDF

    XR-1468CN

    Abstract: 1468CN XR-1488 Four Terminal Positive Voltage Regulators XR-494 XR1468CN Exar cross XR-1489AP XR-1488N XR-1488P
    Text: E X AR CORP Tl D Ë | 3 M 22 blfl □ □ D 47 tfl 7 S 3422618 EXAR C ORP 9 1D XR-V100 Master-Chip Chip Size: 113 x 146 mils NPN Transistors Total Components: 740 Small Signal: 140 Bonding Pads: 28 Large: 4 Max. Operating Voltage: 36V PNP Transistors Lateral: 56


    OCR Scan     		3M22blfl D47tfl XR-V100 280ft: 900ft: 443kft 50kfi: 20kft: 10kft: XR-V100 XR-1468CN 1468CN XR-1488 Four Terminal Positive Voltage Regulators XR-494 XR1468CN Exar cross XR-1489AP XR-1488N XR-1488P PDF

    XR-1489AP

    Abstract: RS232Cto XR-1488 XR-1488N XR-1488P XR-1489A XR-1489AN XR-400 1488p 1489ap
    Text: 3 4 2 2 6 1 8 EXAR CORP XR-400 I2 L Master-Chip Chip Size: 119 * 149 mils 5-Output l2L Gates: 256 Bonding Pads: 40 Max. Operating Voltage: 7Y NPN Transistors: 45 4-Collector PNP Transistors: 12 Schottky-Blpolar I/O Interfaces: 18 9 1 0 0 47 71 D Diffused Resistors


    OCR Scan     		XR-400 XR-400 XR-1488/1489A XR-1488 XR-1568/XR-1468C XR-1468/1568 XR-1489AP RS232Cto XR-1488N XR-1488P XR-1489A XR-1489AN 1488p 1489ap PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF

    2N4256

    Abstract: 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVC e o @ 10mA V hF E Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V CE(SAT) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN


    OCR Scan     		2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306 PDF

    Thyristor Xo 602 MA

    Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
    Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and


    OCR Scan     		PDF

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


    OCR Scan     		OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C PDF