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    PNP TRANSISTOR WC Search Results

    PNP TRANSISTOR WC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096RHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096EHVX Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    PNP TRANSISTOR WC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NT 407 F TRANSISTOR TO 220

    Abstract: NT 407 F TRANSISTOR BFT92 m1b marking 3358 transistor "MARKING CODE W1*" marking code 10 sot23 BFT92W transistor Bft92 NT 407 F power transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT92W PNP 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors May 1994 Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES


    Original     		PDF BFT92W OT323 BFT92W BFT92. MBC870 SCD31 123065/1500/01/pp12 NT 407 F TRANSISTOR TO 220 NT 407 F TRANSISTOR BFT92 m1b marking 3358 transistor "MARKING CODE W1*" marking code 10 sot23 transistor Bft92 NT 407 F power transistor

    NT 407 F TRANSISTOR TO 220

    Abstract: NT 407 F TRANSISTOR BFT92 m1b marking marking code 10 sot23 BFT92W
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT92W PNP 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors May 1994 Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES


    Original     		PDF BFT92W OT323 BFT92W BFT92. MBC870 SCD31 123065/1500/01/pp12 NT 407 F TRANSISTOR TO 220 NT 407 F TRANSISTOR BFT92 m1b marking marking code 10 sot23

    str 6853 equivalent

    Abstract: 702 mini transistor transistor Bf 981 1.8-B 0631 TRANSISTOR 158 TRANSISTOR Bf 522 feature of ic UM 66 l3 sot323 marking code AV sot323 package marking code ce SOT23
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT93W PNP 4 GHz wideband transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 Philips Semiconductors February 1995 Philips Semiconductors Product specification PNP 4 GHz wideband transistor


    Original     		PDF BFT93W OT323 BFT93W BFT93. SCD28 str 6853 equivalent 702 mini transistor transistor Bf 981 1.8-B 0631 TRANSISTOR 158 TRANSISTOR Bf 522 feature of ic UM 66 l3 sot323 marking code AV sot323 package marking code ce SOT23

    GHz PNP transistor

    Abstract: BFT93 BFT93W TRANSISTOR D 5702 marking code X1 transistor BF 998 IC/CTC 1351 transistor pin detail
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT93W PNP 4 GHz wideband transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 Philips Semiconductors March 1994 Philips Semiconductors Product specification PNP 4 GHz wideband transistor


    Original     		PDF BFT93W OT323 BFT93W BFT93. SCD28 GHz PNP transistor BFT93 TRANSISTOR D 5702 marking code X1 transistor BF 998 IC/CTC 1351 transistor pin detail

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    SMO-14

    Abstract: SLG 2016 D 2SK26 2N42 N4 TAM 2N425 marking aaae 2n427 GERMANIUM SMALL SIGNAL TRANSISTORS 2N426
    Text: MIL-S-19500A1B EL See Section6 MILITARYSPECIFICATION SEMICONDUCTORDEVICE,TRANSISTOR,PNP, GERMANIUM,SWITCHING TYPSS 2N425,2Nb26, 2N42? 1. SCOPS 131 w.-. This specificationcovers the detail requirementsfor germanium PNP,“transietora for use in low-power switchingapplication


    Original     		PDF MIL-S-19500A1B( 2N425 2Nb26 -AO07 SMO-14 SLG 2016 D 2SK26 2N42 N4 TAM marking aaae 2n427 GERMANIUM SMALL SIGNAL TRANSISTORS 2N426

    PART NUMBER MARKING SC70-6

    Abstract: pin configuration NPN transistor 2N3904 MARKING CODE 21 SC70
    Text: FFB3946 FFB3946 E2 B2 C1 Package: SC70-6 Device Marking: .AB Note: The " . " dot signifies Pin 1 C2 B1 Transistor 1 is NPN device, Transistor 2 is PNP device. E1 NPN & PNP General Purpose Amplifier SC70-6 Surface Mount Package ThIs dual complementary device was designed for use as a general purpose amplifier and switching


    Original     		PDF FFB3946 SC70-6 2N3904 2N3906 PART NUMBER MARKING SC70-6 pin configuration NPN transistor 2N3904 MARKING CODE 21 SC70

    P2T2907

    Abstract: P2907 PM2907A PM2907 PZT2222AT1 PZT2907AT1 PZT2907AT3 11111111M 30i sot223 P2907A
    Text: MOTOROU Order this document by P~2907ATllD SEMICONDUCTOR TECHNICAL DATA PNP Silicon EpitmiaI Wansistor P2T2907ATI This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is


    Original     		PDF 2907ATllD P2T2907ATI OT-223 PZT2222AT1 PZT2907AT1 MK145BP, 2PHX25151F-5 2907ATIID P2T2907 P2907 PM2907A PM2907 PZT2222AT1 PZT2907AT3 11111111M 30i sot223 P2907A

    D 1437 transistor

    Abstract: 2N3904 2N3906 CBVK741B019 F63TNR L86Z MMPQ6700 NDM3000 NDM3001 SOIC-16
    Text: MMPQ6700 MMPQ6700 B4 E4 B3 E1 E2 B1 E3 B2 C4 C C3 4 C1 SOIC-16 C3 C2 C2 C1 TRANSIST OR TRANSISTOR TYPE C1 B1 E1 & C2 B2 E2 NPN C3 B3 E3 & C4 B4 PNP E4 Quad NPN & PNP General Purpose Amplifier These complimentary devices can be used in switches with collector currents of 10


    Original     		PDF MMPQ6700 SOIC-16 2N3904 2N3906 D 1437 transistor 2N3904 2N3906 CBVK741B019 F63TNR L86Z MMPQ6700 NDM3000 NDM3001 SOIC-16

    2N3634 MOTOROLA

    Abstract: m21 transistor 2N3634 2N3637 transistor m21 MIL-19500 2N3634JTX 2N3635 2N3635JTX 2N3636
    Text: MOTOROU Orderth18 document by2N3WWD SEMICONDUCTOR TECHNICAL DATA o 2N3634JTX, 2N3635JTX, 2N3636JTX, 2N3637JTX, JTXV JTXV, JANS JTXV, JANS JTXV, JANS Processed per MIL+-19500/357 PNP Silicon SmallSignal o General-Purpose Transistor Ic Collector Current,Maimurn


    Original     		PDF Orderth18 2N3634JTX, 2N3635JTX, 2N3636JTX, 2N3637JTX, CHARACTERlST19 2N3634, 2N3635 2N3636, 2N3637 2N3634 MOTOROLA m21 transistor 2N3634 2N3637 transistor m21 MIL-19500 2N3634JTX 2N3635 2N3635JTX 2N3636

    Untitled

    Abstract: No abstract text available
    Text: MMPQ6700 MMPQ6700 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 Mark: MMPQ6700 B4 C2 C1 C3 C2 C4 C4 C3 TRANSISTOR TYPE C1 B1 E1 & C2 B2 E2 NPN C3 B3 E3 & C4 B4 E4 PNP Quad NPN & PNP General Purpose Amplifier These complimentary devices can be used in switches with collector currents of 10 µA to


    Original     		PDF MMPQ6700 SOIC-16 2N3904 2N3906

    MMPQ6700

    Abstract: 2N3904 2N3906 CBVK741B019 F63TNR L86Z NDM3000 NDM3001 SOIC-16
    Text: MMPQ6700 MMPQ6700 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 Mark: MMPQ6700 B4 C2 C1 C3 C2 C4 C4 C3 TRANSISTOR TYPE C1 B1 E1 & C2 B2 E2 NPN C3 B3 E3 & C4 B4 E4 PNP Quad NPN & PNP General Purpose Amplifier These complementary devices can be used in switches with collector currents of 10 µA to


    Original     		PDF MMPQ6700 SOIC-16 2N3904 2N3906 MMPQ6700 2N3904 2N3906 CBVK741B019 F63TNR L86Z NDM3000 NDM3001 SOIC-16

    D 1437 transistor

    Abstract: CBVK741B019 F63TNR L86Z MMPQ6502 NDM3000 NDM3001 PN2222A PN2907A SOIC-16
    Text: MMPQ6502 MMPQ6502 B E4 4 B3 E1 B1 E2 SOIC-16 B2 E3 C C4 4 C3 C1 C2 C1 C C2 3 Pin #1 TRANSIST OR TRANSISTOR TYPE C1 B1 E1 & C 2 B2 E 2 NPN C3 B3 E3 & C4 B4 PNP E4 Quad NPN & PNP General Purpose Amplifier These complimentary devices can be used in medium power amplifiers, drivers and


    Original     		PDF MMPQ6502 SOIC-16 PN2222A PN2907A D 1437 transistor CBVK741B019 F63TNR L86Z MMPQ6502 NDM3000 NDM3001 PN2222A PN2907A SOIC-16

    marking wc

    Abstract: 2MP03SF
    Text: 2MP03SF Ordering number : EN8379A SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2MP03SF High-Frequency General-Purpose Amplifier Applications Features • • • • High fT : fT=230MHz typ . Small reverse transfer capacitance : Cre=0.9pF (typ).


    Original     		PDF 2MP03SF EN8379A 230MHz 2MP03SF marking wc

    Untitled

    Abstract: No abstract text available
    Text: 2MP03SF Ordering number : EN8379A PNP Epitaxial Planar Silicon Transistor 2MP03SF High-Frequency General-Purpose Amplifier Applications Features • • • • High fT : fT=230MHz typ . Small reverse transfer capacitance : Cre=0.9pF (typ). Low NF : (2.5dB typ)


    Original     		PDF 2MP03SF EN8379A 230MHz 2MP03SF

    transistor bc 577

    Abstract: bc 574 transistor common collector pnp array transistor marking code wts transistor Bc 574 47k2 MARKING wts sot363 marking 32 SOT-363 transistor BC 575
    Text: SIEMENS BCR 48PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor NPN: R1 = 47k£2, R2 = 47kQ PNP: R1 = 2.2kfl, R2 = 47ki2


    OCR Scan     		PDF 47ki2 Q62702-C2496 OT-363 transistor bc 577 bc 574 transistor common collector pnp array transistor marking code wts transistor Bc 574 47k2 MARKING wts sot363 marking 32 SOT-363 transistor BC 575

    AF139

    Abstract: OOQ405 mz 1540
    Text: ESC D • flE35t.05 0004056 T B IS IE G t n PNP Germanium RF Transistor AF139 -SIEMENS AKTIENGESELLSCHAF - ~ T ~ 3 I~ 0 7 for input stages, mixer and oscillator stages up to 8 6 0 M H z AF 139 is a germanium PNP mesa transistor in TO 92 case 18 A 4 DIN 41876 . The leads


    OCR Scan     		PDF OOQ405Ã AF139 Q60106-X139 200MHz- A800MHZ- AF139 10lHHz OOQ405 mz 1540

    564 sot363

    Abstract: No abstract text available
    Text: SIEMENS BCR 22PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=22k£2, R2=22k£i) Tape loading orientation


    OCR Scan     		PDF Q62702-C2375 OT-363 564 sot363

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS BCR 35PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (Rj=10kiJ, F<2=47kQ) Tape loading orientation


    OCR Scan     		PDF 10kiJ, Q62702-C2495 OT-363

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 08PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=2.2kD, R2=47kiî) Cl Tape loading orientation


    OCR Scan     		PDF Q62702-C2486 OT-363 as35b05 D15DLSB E35bD5 01EDbS4

    LB 122 transistor

    Abstract: 2N4209 2N4208
    Text: Datasheet wcnVa qi Semiconductor Corp. 2N4208 2N4209 PNP SILICON TRANSISTOR 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-18 CASE M anufacturers of W orld C lass Discrete Sem iconductors DESCRIPTION The CENTRAL SEMICONDUCTOR 2N4208, 2N4209 types are PNP Saturated Switching Transistors designed


    OCR Scan     		PDF 2N4208 2N4209 2N4208, 2N4209 2N4208 200se 100MHz LB 122 transistor

    hp2530

    Abstract: IB32 MPS-U60 MPSU60 transistor ll6 TRANSISTOR mpsu60
    Text: MOTOROLA SEMICONDUCTOR MPS-U60 TECHNICAL DATA ¡s& CON ANNULAR TRANSISTOR PNP SILICON HIGH VOLTAGE TRANSISTOR sigred for general-purpose applications requiring high breakItages, low saturation voltages and low capacitance. Com plem ent to NPN T y p e M P S -U IO


    OCR Scan     		PDF MPS-U60 hp2530 IB32 MPS-U60 MPSU60 transistor ll6 TRANSISTOR mpsu60

    pmi dac08

    Abstract: DAC08
    Text: A N A L O G . E Ü D E V I C E S / P M I D I V S b E D • O ô l b f l O S MAT-03 0 Q G T 3 4 Ö 1 ■ LOW NOISE, MATCHED, _ DUAL PNP TRANSISTOR P r e c ip it in M o i i o l i t h i c s h ic . FEATURES • • • • • • • • Dual Matched PNP Transistor


    OCR Scan     		PDF MAT-03 100pV 190MHz DAC-08, 992mA 008mA pmi dac08 DAC08