dab RECEIVER
Abstract: U2733B-C hp7000 BC846B LL1608-F47NJ SSO20 U2309B U2753B-C U2759B i50l
Text: U2733B-C Fractional-N Frequency Synthesizer for DAB Tuner Description The U2733B-C is a monolithically integrated fractional-N frequency synthesizer circuit fabricated in TEMIC’s advanced UHF5S technology. Designed for applications in DAB receivers, it controls a VCO to
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U2733B-C
U2733B-C
D-74025
21-Aug-96
dab RECEIVER
hp7000
BC846B
LL1608-F47NJ
SSO20
U2309B
U2753B-C
U2759B
i50l
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Untitled
Abstract: No abstract text available
Text: U2734B Fractional-N Frequency Synthesizer for DAB Tuner Description The U2734B is a monolithic integrated fractional-N frequency synthesizer circuit fabricated with TEMIC Smiconductors’ advanced UHF5S technology. Designed for applications in DAB receivers, it controls a VCO to
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U2734B
U2734B
16-kHz
D-74025
24-Jun-99
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hp7000
Abstract: No abstract text available
Text: Features • • • • • • • • • • • • • • • • • • • • • • • • • • • • 8.5 V Supply Voltage Voltage Regulator for Stable Operating Conditions Microprocessor-controlled Via a Simple Two-wire Bus Two Addresses Selectable
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4671B
hp7000
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hp7000
Abstract: No abstract text available
Text: U2731B DAB One-Chip Front End Description The U2731B is a monolithically integrated DAB one-chip front end circuit manufactured using TEMIC Semiconductors’ advanced UHF5S technology. Its functionality covers a gain-controlled RF amplifier with two selectable RF inputs, a gain-controlled RF mixer, a
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U2731B
U2731B
16-kHz
D-74025
20-May-99
hp7000
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hp7000
Abstract: U2731B Atmel
Text: Features • • • • • • • • • • • • • • • • • • • • • • • • • • • • 8.5 V Supply Voltage Voltage Regulator for Stable Operating Conditions Microprocessor-controlled Via a Simple Two-wire Bus 4 Addresses Selectable
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SSO20
Abstract: U2733B-D U2733B-DFS U2759B
Text: U2733B-D Fractional-N Frequency Synthesizer for DAB Tuner Description The U2733B-D is a monolithic integrated fractional-N frequency synthesizer circuit fabricated with TEMIC’s advanced UHF5S technology. Designed for applications in DAB receivers, it controls a VCO to synthesize
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U2733B-D
U2733B-D
16-kHz
D-74025
22-Jul-98
SSO20
U2733B-DFS
U2759B
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hp7000
Abstract: X6922M BB545 BC846B U2730B-N U2731B
Text: Features • • • • • • • • • • • • • • • • • • • • • • • • • • • • 8.5 V Supply Voltage Voltage Regulator for Stable Operating Conditions Microprocessor-controlled Via a Simple Two-wire Bus Two Addresses Selectable
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4671C
hp7000
X6922M
BB545
BC846B
U2730B-N
U2731B
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hp7000
Abstract: X6922M U2730B-B U2731B-AFS U2733B-D U2750B-B U2759B dab circuitry
Text: U2731B-A DAB One-Chip Front End Description The U2731B-A is a monolithically integrated DAB onechip front end circuit fabricated with TEMIC’s advanced UHF5S technology. It summarizes the functionality of TEMIC’s U2750B-B, U2759B, U2733B-D and offers, furthermore, additional features. Its functionality covers
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U2731B-A
U2731B-A
U2750B-B,
U2759B,
U2733B-D
D-74025
15-Jul-98
hp7000
X6922M
U2730B-B
U2731B-AFS
U2750B-B
U2759B
dab circuitry
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Untitled
Abstract: No abstract text available
Text: U2733B-D Fractional-N Frequency Synthesizer for DAB Tuner Description The U2733B-D is a monolithic integrated fractional-N frequency synthesizer circuit fabricated with TEMIC Semiconductors’ advanced UHF5S technology. Designed for applications in DAB receivers, it controls a
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U2733B-D
U2733B-D
16-kHz
D-74025
24-Jun-99
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pnwf
Abstract: No abstract text available
Text: U2733B-C Fractional-N Frequency Synthesizer for DAB Tuner Description The U2733B-C is a monolithic integrated fractional-N frequency synthesizer circuit fabricated in TEMIC’s advanced UHF5S technology. Designed for applications in DAB receivers, it controls a VCO to synthesize
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U2733B-C
U2733B-C
D-74025
23-Jun-99
pnwf
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hp7000
Abstract: U2731B X6922M BC846B U2730B U2731B-MFN dab circuitry
Text: U2731B DAB One-Chip Front End Description The U2731B is a monolithically integrated DAB one-chip front end circuit manufactured using Atmel Wireless & Microcontrollers’ advanced UHF5S technology. Its functionality covers a gain-controlled RF amplifier with two selectable RF inputs, a gain-controlled
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U2731B
U2731B
16-kHz
D-74025
09-Oct-00
hp7000
X6922M
BC846B
U2730B
U2731B-MFN
dab circuitry
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hp7000
Abstract: X6922M ATR2730 ATR2731 BB545 BC846B dab circuitry
Text: Features • • • • • • • • • • • • • • • • • • • • • • • • • • • • 8.5V Supply Voltage Voltage Regulator for Stable Operating Conditions Microprocessor-controlled Via a Simple Two-wire Bus Two Selectable Addresses
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dab RECEIVER
Abstract: sec 13007
Text: U2734B Fractional-N Frequency Synthesizer for DAB Tuner Description The U2734B is a monolithic integrated fractional-N frequency synthesizer circuit fabricated with TEMIC’s advanced UHF5S technology. Designed for applications in DAB receivers, it controls a VCO to synthesize
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U2734B
U2734B
16-kHz
D-74025
17-Jul-98
dab RECEIVER
sec 13007
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IN414B
Abstract: 3.3uF 400v EF20 L2 33UF 400V bridge rectifier ic EF20 TRANSFORMER 0.47uF TL431 5v 4,7uF 50v EF20 6 4 TRANSFORMER
Text: OPTION ONLY ONE LJ « CL O — CL 2 O LJ PIN FOR T e r mi na I B l o c k DC I NP UT 2.2nF 400V UD Z u CONTRACT NO. CMS 100-0330 APPROVALS D RA WN COMPANY EC090603 DATE 6 /3 / 2 0 0 9 CHECKED N A ME CYGNUS MICROSYSTEMS IP] PnWFR FHR LTD. DWG TINY S IZ E 1 F S CM
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EP-402
10/Z2/33uF
EC090S03
IN414B
3.3uF 400v
EF20 L2
33UF 400V
bridge rectifier ic
EF20 TRANSFORMER
0.47uF
TL431 5v
4,7uF 50v
EF20 6 4 TRANSFORMER
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2N1016
Abstract: 2N1015C STA3265 2N2229 2N1015 2N1015A 2N1015B 2N1015D 2N1015E STA9760
Text: Silicon power transistors NPN TO-61 isolated collector (contad) lc | M A X ) Il FE IC/VCE VcEO(SUS| (Min-Max Tvp e# (Volts) @ A/V) STA9760 10-200 10/4 225 STA9761 300 10-200@ 8/4 10-200@5/4 STA 9762 350 VCE|S*T| @ Ic/Ib (V <a A/A) 2@ 10/1 2 @ 8 /.8
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STA9760
STAB760
STA9761
STA3265
STA3285
STA3266
STA8860
2N1016
2N1015C
2N2229
2N1015
2N1015A
2N1015B
2N1015D
2N1015E
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buz71a
Abstract: No abstract text available
Text: PowerMOS transistor _ N AMER PHILIPS/DISCRETE OLE D BUZ71A • hhS3131 D D m M C H 5 ■ T-3 1 - 1/ May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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BUZ71A
hhS3131
O220AB
T-39-11
bb53T31
buz71a
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SMA End Launch connectors
Abstract: 142-0761-821
Text: High Frequency SMA End Launch Connectors Part Data EM ERSO N Network Power Jack Receptacle - Edge Mount for .062 Board, Round Body Coupling proof torque 8 inchpounds maximum without support wrench FREQ RANGE 0-26.5 GHz G O LD PLATED H IG H F R E Q U E N C Y S U B S T R A T E T H IC K N E S S
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Untitled
Abstract: No abstract text available
Text: 7294621 POWEREX INC 02E "□2 POWEREX I N C m / Ü B Œ 0 2 904 D ¿TI vam si T~ ¿ / 7 □ □□E'íGM 1 FT100DM X Powerex, Inc. Hlllls Street, Youngwood, Pennsylvania 1S697 412 925-7272 Powerex Europe, S.A., 428 Ave. G. Durand, BP107, 72003 LeMans, France (43) 72.7S.15
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72c14ti51
FT100DM
1S697
BP107,
Amperes/200-1800
Avg/200-1800
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Untitled
Abstract: No abstract text available
Text: Tem ic U2733B-C S e m i c o n d u c t o r s Fractional-N Frequency Synthesizer for DAB Tuner Description The U2733B-C is a monolithic integrated fractional-N frequency synthesizer circuit fabricated in TEMIC’s advanced UHF5S technology. Designed for applications
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PDF
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U2733B-C
U2733B-C
D-74025
07-May-98
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Untitled
Abstract: No abstract text available
Text: Tem ic U2733B-C S e m i c o n d u c t o r s Fractional-N Frequency Synthesizer for DAB Tuner Description The U2733B-C is a monolithic integrated fractional-N frequency synthesizer circuit fabricated in TEM IC’s advanced UHF5S technology. Designed for applications
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U2733B-C
U2733B-C
D-74025
23-Jun-99
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1S697
Abstract: BP107 FT100DM FT100DM-12 SCR gate Control IC
Text: 7294621 POWEREX INC 02E "□2 POWEREX I N C m / Ü B Œ 0 2 904 D ¿TI vam si T~ ¿ / 7 □ □□E'íGM 1 FT100DM X Powerex, Inc. Hlllls Street, Youngwood, Pennsylvania 1S697 412 925-7272 Powerex Europe, S.A., 428 Ave. G. Durand, BP107, 72003 LeMans, France (43) 72.7S.15
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72c14ti51
FT100DM
1S697
BP107,
FT100DM
Amperes/200-1800
Avg/200-1800
1S697
BP107
FT100DM-12
SCR gate Control IC
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Untitled
Abstract: No abstract text available
Text: MGIDEAS IN M b S C POWER " • ■ P ow erT ech 90 AMPERES JAN TX2N5926 PT - 7 5 0 7 P T - 750B SILICON NFN TRANSISTOR FEATURES: vCEiSStl ‘SE- . O .G V 0 5O A . 1.2 V & 5U A ■FE t 5 m in 5 0 0 A 'Sftt ' 1.2 A 0 100 V 2 U sec FS/b- G Jou'es
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TX2N5926
11i-h
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor • bfc,S3^31 0014366 1 ■ BUZ11 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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BUZ11
BUZ11_
00143TE
T-39-11
bbS3T31
I-39-11
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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