PNZ115 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ115 (PN115) Silicon planar type Unit: mm For optical control systems 4.2±0.3 4.5±0.3 φ3.5±0.2 Not soldered 2.4 4.8±0.3 1.9 2.0 • High sensitivity • Wide directivity characteristics, suited for detecting GaAs LEDs:

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ115 (PN115) Silicon planar type Unit: mm For optical control systems 4.2±0.3 4.5±0.3 φ3.5±0.2 Not soldered 2.4 4.8±0.3 1.9 M Di ain sc te on na tin nc ue e/ d 2.0 • High sensitivity

PN115

Abstract: PNZ115
Contextual Info: Phototransistors PNZ115 PN115 Silicon NPN Phototransistor Unit : mm For optical control systems High sensitivity Wide directional sensitivity, matched to GaAs LEDs : θ = 35 deg. (typ.) Fast response : tr = 5 µs (typ.) Side-view type package 3-0.45±0.2

PN115

Abstract: PNZ115
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ115 (PN115) Silicon planar type For optical control systems • Features ue pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low

Contextual Info: Phototransistors PNZ115 Silicon NPN Phototransistor Unit : mm For optical control systems High sensitivity Wide directional sensitivity, matched to GaAs LEDs : θ = 35 deg. typ. Fast response : tr = 5 µs (typ.) Side-view type package 3-0.45±0.2 12.5 min.

Contextual Info: Phototransistors PNZ115 PN115 Silicon planar type Unit: mm For optical control systems 4.2±0.3 4.5±0.3 φ3.5±0.2 Not soldered 2.4 4.8±0.3 1.9 2.0 • High sensitivity • Wide directivity characteristics, suited for detecting GaAs LEDs: θ = 35° (typ.)

Contextual Info: Phototransistors PNZ115 PN115 Silicon planar type Unit: mm For optical control systems 4.2±0.3 4.5±0.3 φ3.5±0.2 Not soldered 2.4 4.8±0.3 1.9 2.0 • High sensitivity • Wide directivity characteristics, suited for detecting GaAs LEDs: θ = 35° (typ.)

PN115

Abstract: PNZ115 K50010
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ115 (PN115) Silicon planar type For optical control systems • Features  High sensitivity  Wide directivity characteristics, suited for detecting GaAs LEDs: θ = 35° (typ.)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ115 (PN115) Silicon planar type Unit: mm For optical control systems 4.2±0.3 4.5±0.3 φ3.5±0.2 Not soldered 2.4 4.8±0.3 1.9 2.0 • High sensitivity • Wide directivity characteristics, suited for detecting GaAs LEDs:

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

mip411

Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

PNZ335

Abstract: PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F
Contextual Info: Characteristics List • Photodetector 11 Photodetector ■ PIN Photodiode Absolute Maximum Ratings VR V PD (mW) ID VR max. VR (V) (nA) (V) 30 10 50 Part No. PNA3W01L (PN307) Electro • Optical Characteristics Ta = 25°C IL λP L min. typ. VR (lx) (µA) (nm) (V)