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    PNZ123S Search Results

    PNZ123S Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PNZ123S Panasonic Silicon NPN Phototransistor Original PDF
    PNZ123S Panasonic Silicon NPN Phototransistor Original PDF

    PNZ123S Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Phototransistors PNZ123S PN123S Silicon planar type Unit: mm φ3.0±0.15 3.75±0.3 • Features 12.5 min. • High sensitivity • Low dark current • Fast response: tr = 3 µs (typ.) • Small size (φ3) ceramic package 2.0±0.2 For optical control systems


    Original
    PNZ123S PN123S) CTRLR102-001 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ123S (PN123S) Silicon planar type Unit: mm φ3.0±0.2 4.1±0.3 • Features 12.5 min. • High sensitivity • Low dark current • Fast response: tr = 3 µs (typ.) • Small size (φ3) ceramic package


    Original
    2002/95/EC) PNZ123S PN123S) PDF

    "Photo Interrupter" Application Note

    Abstract: LN62S PN123S PNZ123S
    Text: Phototransistors PNZ123S PN123S Silicon NPN Phototransistor Unit : mm ø3.0±0.2 Can be combined with LN62S to form an photo interrupter Features 4.1±0.3 2.0±0.2 For optical control systems 12.5 min. High sensitivity Low dark current Fast response : tr = 3.5 µs (typ.)


    Original
    PNZ123S PN123S) LN62S "Photo Interrupter" Application Note PN123S PNZ123S PDF

    Untitled

    Abstract: No abstract text available
    Text: Phototransistors PNZ123S PN123S Silicon planar type Unit: mm φ3.0±0.2 4.1±0.3 • Features 12.5 min. • High sensitivity • Low dark current • Fast response: tr = 3 µs (typ.) • Small size (φ3) ceramic package 2.0±0.2 For optical control systems


    Original
    PNZ123S PN123S) PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ123S (PN123S) Silicon planar type Unit: mm φ3.0±0.15 3.75±0.3 • Features 12.5 min. • High sensitivity • Low dark current • Fast response: tr = 3 µs (typ.) • Small size (φ3) ceramic package


    Original
    2002/95/EC) PNZ123S PN123S) CTRLR102-001 PDF

    PNZ123S

    Abstract: PN123S
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ123S (PN123S) Silicon planar type For optical control systems • Features  High sensitivity  Low collector-emitter cutoff current (base open)  Fast response: tr = 3 s (typ.)


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    2002/95/EC) PNZ123S PN123S) PNZ123S PN123S PDF

    LN62S

    Abstract: PNZ123S
    Text: Phototransistors PNZ123S Silicon NPN Phototransistor Unit : mm ø3.0±0.2 Can be combined with LN62S to form an photo interrupter Features 4.1±0.3 2.0±0.2 For optical control systems 12.5 min. High sensitivity Low dark current Fast response : tr = 3.5 µs typ.


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    PNZ123S LN62S PNZ123S PDF

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


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    PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent PDF

    mip411

    Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original
    PAMP13-N1 mip411 MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291 PDF

    PNZ335

    Abstract: PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F
    Text: Characteristics List • Photodetector 11 Photodetector ■ PIN Photodiode Absolute Maximum Ratings VR V PD (mW) ID VR max. VR (V) (nA) (V) 30 10 50 Part No. PNA3W01L (PN307) Electro • Optical Characteristics Ta = 25°C IL λP L min. typ. VR (lx) (µA) (nm) (V)


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    PNA3W01L PN307) PNZ313 PN313) PNZ300F PN300F) PNZ313B PN313B) PNZ323 PN323) PNZ335 PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F PDF